制造商是'NA'
NA 晶体管 - FET，MOSFET - 单个
(330)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)（最大值） | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | Vgs（最大值） | 极性/通道类型 | 下降时间（典型值） | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | DS 击穿电压-最小值 | 雪崩能量等级（Eas） | 场效应管技术 | 最大结点温度（Tj） | 漏源电阻 | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||
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 | CSD25303W1015 | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1.8V 4.5V | 1 | 1.5W Ta | 11.3 ns | 表面贴装 | 表面贴装 | 6-UFBGA, DSBGA | 6 | SILICON | 3A Tc | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | no | Obsolete | 1 (Unlimited) | 6 | EAR99 | BOTTOM | BALL | CSD25303 | 6 | Single | 增强型MOSFET | 1.5W | 3.9 ns | P-Channel | SWITCHING | 58m Ω @ 1.5A, 4.5V | 1V @ 250μA | 435pF @ 10V | 4.3nC @ 4.5V | 8.6ns | 20V | ±8V | 7.8 ns | 3A | 8V | 3A | 0.092Ohm | -20V | 无 | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||||||||||||
 | CSD18531Q5A | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 4.5V 10V | 1 | 3.1W Ta 156W Tc | 20 ns | ACTIVE (Last Updated: 10 hours ago) | Tin | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 19A Ta 100A Tc | -55°C~150°C TJ | Cut Tape (CT) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | DUAL | 260 | CSD18531 | 1 | Single | 增强型MOSFET | 156W | DRAIN | 4.4 ns | N-Channel | SWITCHING | 4.6m Ω @ 22A, 10V | 2.3V @ 250μA | 3840pF @ 30V | 43nC @ 10V | 7.8ns | ±20V | 2.7 ns | 100A | 1.8V | 20V | 60V | 224 mJ | 175°C | 1.8 V | 1.1mm | 4.9mm | 6mm | 1mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||
 | CSD25402Q3A | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 1.8V 4.5V | 1 | 2.8W Ta 69W Tc | 25 ns | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 76A Tc | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | DUAL | FLAT | 260 | 未说明 | CSD25402 | 1 | Single | 增强型MOSFET | 2.8W | SOURCE | 10 ns | P-Channel | SWITCHING | 8.9m Ω @ 10A, 4.5V | 1.15V @ 250μA | 1790pF @ 10V | 9.7nC @ 4.5V | 7ns | 20V | ±12V | 12 ns | -76A | -900mV | 12V | 35A | -20V | 150°C | 900μm | 3.3mm | 3.3mm | 800μm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||
 | CSD18532Q5B | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 4.5V 10V | 1 | 3.2W Ta 156W Tc | 22 ns | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 100A Ta | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | DUAL | 无铅 | 260 | not_compliant | 未说明 | CSD18532 | 1 | Single | 增强型MOSFET | 3.2W | DRAIN | 5.8 ns | N-Channel | SWITCHING | 3.2m Ω @ 25A, 10V | 2.2V @ 250μA | 5070pF @ 30V | 58nC @ 10V | 7.2ns | ±20V | 3.1 ns | 23A | 1.5V | 20V | 0.0043Ohm | 60V | 400A | 320 mJ | 150°C | 1.05mm | 5mm | 6mm | 950μm | 无SVHC | ROHS3 Compliant | 含铅 | ||||||||||||||||||||
 | CSD16301Q2 | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 3V 8V | 1 | 2.3W Ta | 4.1 ns | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | 表面贴装 | 6-SMD, Flat Leads | 6 | SILICON | 5A Tc | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e4 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | CSD16301 | 6 | 1 | Single | 增强型MOSFET | 2.3W | DRAIN | 2.7 ns | N-Channel | SWITCHING | 24m Ω @ 4A, 8V | 1.55V @ 250μA | 340pF @ 12.5V | 2.8nC @ 4.5V | 4.4ns | +10V, -8V | 1.7 ns | 5A | 1.2V | 10V | 5A | 0.034Ohm | 25V | 20A | 150°C | 1.2 V | 800μm | 2mm | 2mm | 750μm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||
| CSD17313Q2 | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 3V 8V | 1 | 2.3W Ta | 4.2 ns | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 表面贴装 | 6-WDFN Exposed Pad | 6 | SILICON | 5A Tc | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e4 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | CSD17313 | 8 | Single | 增强型MOSFET | 2.3W | DRAIN | 2.8 ns | N-Channel | SWITCHING | 30m Ω @ 4A, 8V | 1.8V @ 250μA | 340pF @ 15V | 2.7nC @ 4.5V | 3.9ns | +10V, -8V | 1.3 ns | 5A | 1.3V | 10V | 5A | 0.042Ohm | 30V | 20A | 800μm | 2mm | 2mm | 750μm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||
| CSD18543Q3A | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 1 | 4.5V 10V | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 8-PowerVDFN | YES | 8 | 8 ns | Tape & Reel (TR) | e3 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | Matte Tin (Sn) | 150°C | -55°C | 雪崩 额定 | DUAL | FLAT | CSD18543 | 1 | Single | 增强型MOSFET | 66W | DRAIN | 9 ns | SWITCHING | 60V | ±20V | N-CHANNEL | 35A | 20V | 55 mJ | METAL-OXIDE SEMICONDUCTOR | 150°C | 8.1mOhm | 6.2 pF | 900μm | 3.3mm | 3.3mm | 800μm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||
 | CSD16406Q3 | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 4.5V 10V | 1 | 2.7W Ta | 8.5 ns | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 19A Ta 60A Tc | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 5 | SMD/SMT | EAR99 | 雪崩 额定 | DUAL | 260 | CSD16406 | 8 | Single | 增强型MOSFET | 2.7W | DRAIN | 7.3 ns | N-Channel | SWITCHING | 5.3m Ω @ 20A, 10V | 2.2V @ 250μA | 1100pF @ 12.5V | 8.1nC @ 4.5V | 12.9ns | +16V, -12V | 4.8 ns | 60A | 1.7V | 16V | 0.0074Ohm | 25V | 25V | 1.7 V | 3.3mm | 3.3mm | 1mm | 无 | 无SVHC | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||
| CSD18504Q5A | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 4.5V 10V | 1 | 3.1W Ta 77W Tc | 12 ns | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 15A Ta 50A Tc | -55°C~150°C TJ | Cut Tape (CT) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | DUAL | 260 | CSD18504 | 1 | Single | 增强型MOSFET | 3.1W | DRAIN | 3.2 ns | N-Channel | SWITCHING | 6.6m Ω @ 17A, 10V | 2.4V @ 250μA | 1656pF @ 20V | 19nC @ 10V | 6.8ns | ±20V | 2 ns | 15A | 1.9V | 20V | 50A | 40V | 275A | 92 mJ | 150°C | 9.6 pF | 1.1mm | 4.9mm | 6mm | 1mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||
 | CSD19532Q5B | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 6V 10V | 1 | 3.1W Ta 195W Tc | 22 ns | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 100A Ta | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | 雪崩 额定 | DUAL | 无铅 | 260 | not_compliant | 未说明 | CSD19532 | 1 | Single | 增强型MOSFET | 3.1W | DRAIN | 7 ns | N-Channel | SWITCHING | 4.9m Ω @ 17A, 10V | 3.2V @ 250μA | 4810pF @ 50V | 62nC @ 10V | 6ns | ±20V | 6 ns | 100A | 2.6V | 20V | 0.0057Ohm | 100V | 400A | 274 mJ | 150°C | 1.05mm | 5mm | 6mm | 950μm | 无SVHC | ROHS3 Compliant | 含铅 | ||||||||||||||||||||
 | CSD19537Q3T | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 6V 10V | 1 | 2.8W Ta 83W Tc | 10 ns | ACTIVE (Last Updated: 5 days ago) | Copper, Tin | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 50A Ta | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 5 | 12.1mOhm | Matte Tin (Sn) | 雪崩 额定 | DUAL | 无铅 | not_compliant | CSD19537 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 5 ns | N-Channel | SWITCHING | 14.5m Ω @ 10A, 10V | 3.6V @ 250μA | 1680pF @ 50V | 21nC @ 10V | 3ns | 100V | ±20V | 3 ns | 50A | 3V | 20V | 9.7A | 219A | 100V | 55 mJ | 17.3 pF | 3.3mm | 3.3mm | 1mm | 无SVHC | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||
| CSD18563Q5A | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 4.5V 10V | 1 | 3.2W Ta 116W Tc | 11.4 ns | ACTIVE (Last Updated: 5 days ago) | Tin | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 100A Ta | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | DUAL | 无铅 | 260 | not_compliant | 未说明 | CSD18563 | 1 | Single | 增强型MOSFET | 3.2W | DRAIN | 3.2 ns | N-Channel | SWITCHING | 6.8m Ω @ 18A, 10V | 2.4V @ 250μA | 1500pF @ 30V | 20nC @ 10V | 6.3ns | ±20V | 1.7 ns | 15A | 2V | 20V | 93A | 60V | 96A | 150°C | 2 V | 1.1mm | 4.9mm | 6mm | 1mm | 无SVHC | ROHS3 Compliant | 含铅 | ||||||||||||||||||||
 | CSD25310Q2 | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 1.8V 4.5V | 1 | 2.9W Ta | 15 ns | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 表面贴装 | 6-WDFN Exposed Pad | 6 | SILICON | 20A Ta | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e4 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 无铅 | 260 | 未说明 | CSD25310 | Single | 增强型MOSFET | 2.9W | SOURCE | 8 ns | P-Channel | SWITCHING | 23.9m Ω @ 5A, 4.5V | 1.1V @ 250μA | 655pF @ 10V | 4.7nC @ 4.5V | 15ns | 20V | ±8V | 5 ns | 20A | -850mV | 8V | 0.089Ohm | 48A | 20V | 2mm | 2mm | 750μm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||
| CSD19534Q5A | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 6V 10V | 1 | 3.2W Ta 63W Tc | 20 ns | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 50A Ta | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | 雪崩 额定 | DUAL | 无铅 | 260 | not_compliant | 未说明 | CSD19534 | 1 | Single | 增强型MOSFET | 3.2W | DRAIN | 9 ns | N-Channel | SWITCHING | 15.1m Ω @ 10A, 10V | 3.4V @ 250μA | 1680pF @ 50V | 22nC @ 10V | 14ns | ±20V | 6 ns | 10A | 20V | 100V | 55 mJ | 150°C | 7.4 pF | 1.1mm | 4.9mm | 6mm | 1mm | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||
| CSD17308Q3 | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 3V 8V | 1 | 2.7W Ta | 9.9 ns | ACTIVE (Last Updated: 21 hours ago) | Tin | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 14A Ta 44A Tc | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | 雪崩 额定 | DUAL | 260 | CSD17308 | 8 | 1 | Single | 增强型MOSFET | 2.7W | DRAIN | 4.5 ns | N-Channel | SWITCHING | 10.3m Ω @ 10A, 8V | 1.8V @ 250μA | 700pF @ 15V | 5.1nC @ 4.5V | 5.7ns | +10V, -8V | 2.3 ns | 14A | 1.3V | 10V | 47A | 30V | 65 mJ | 150°C | 1.3 V | 35 pF | 1.1mm | 3.3mm | 3.3mm | 1mm | 无 | 无SVHC | ROHS3 Compliant | 含铅 | ||||||||||||||||||||
| CSD19533Q5A | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 6V 10V | 1 | 3.2W Ta 96W Tc | 16 ns | ACTIVE (Last Updated: 6 days ago) | Tin | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 100A Ta | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | 雪崩 额定 | DUAL | 无铅 | 260 | not_compliant | 未说明 | CSD19533 | 1 | Single | 增强型MOSFET | 3.2W | DRAIN | 6 ns | N-Channel | SWITCHING | 9.4m Ω @ 13A, 10V | 3.4V @ 250μA | 2670pF @ 50V | 35nC @ 10V | 6ns | 100V | ±20V | 5 ns | 13A | 2.8V | 20V | 150°C | 1.1mm | 4.9mm | 6mm | 1mm | 无SVHC | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||
| CSD18533Q5A | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 4.5V 10V | 1 | 3.2W Ta 116W Tc | 15 ns | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 17A Ta 100A Tc | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | Matte Tin (Sn) | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | DUAL | 260 | CSD18533 | Single | 增强型MOSFET | 3.2W | DRAIN | 5.2 ns | N-Channel | SWITCHING | 5.9m Ω @ 18A, 10V | 2.3V @ 250μA | 2750pF @ 30V | 36nC @ 10V | 5.5ns | 60V | ±20V | 2 ns | 100A | 1.9V | 20V | 60V | 1.9 V | 9 pF | 1.1mm | 4.9mm | 6mm | 1mm | 无 | 无SVHC | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||
| CSD17577Q3AT | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 4.5V 10V | 1 | 2.8W Ta 53W Tc | 20 ns | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 35A Ta | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 5 | 雪崩 额定 | DUAL | FLAT | 260 | 未说明 | CSD17577 | 1 | Single | 增强型MOSFET | 2.8W | DRAIN | 4 ns | N-Channel | SWITCHING | 4.8m Ω @ 16A, 10V | 1.8V @ 250μA | 2310pF @ 15V | 35nC @ 10V | 31ns | 30V | ±20V | 4 ns | 19A | 1.4V | 20V | 239A | 30V | 39 mJ | 3.3mm | 3.3mm | 800μm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||
| CSD16321Q5 | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 3V 8V | 1 | 3.1W Ta | 27 ns | ACTIVE (Last Updated: 4 days ago) | Tin | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 31A Ta 100A Tc | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 5 | SMD/SMT | EAR99 | 雪崩 额定 | DUAL | 260 | CSD16321 | 8 | Single | 增强型MOSFET | 3.1W | DRAIN | 9 ns | N-Channel | SWITCHING | 2.4m Ω @ 25A, 8V | 1.4V @ 250μA | 3100pF @ 12.5V | 19nC @ 4.5V | 15ns | +10V, -8V | 17 ns | 100A | 1.1V | 10V | 0.0035Ohm | 25V | 200A | 25V | 1.1 V | 1.05mm | 5mm | 6mm | 1mm | 无 | 无SVHC | ROHS3 Compliant | 含铅 | |||||||||||||||||||||
| CSD18563Q5AT | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 4.5V 10V | 1 | 3.2W Ta 116W Tc | 11.4 ns | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 100A Ta | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | DUAL | 无铅 | 260 | not_compliant | 未说明 | CSD18563 | 1 | Single | 增强型MOSFET | DRAIN | 3.2 ns | N-Channel | SWITCHING | 6.8m Ω @ 18A, 10V | 2.4V @ 250μA | 1500pF @ 30V | 20nC @ 10V | 6.3ns | 60V | ±20V | 1.7 ns | 100A | 2V | 20V | 96A | 60V | 1.1mm | 4.9mm | 6mm | 1mm | 无SVHC | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||
| CSD18534Q5A | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 4.5V 10V | 1 | 3.1W Ta 77W Tc | 15 ns | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 13A Ta 50A Tc | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | DUAL | 260 | CSD18534 | Single | 增强型MOSFET | 3.1W | DRAIN | 5.2 ns | N-Channel | SWITCHING | 9.8m Ω @ 14A, 10V | 2.3V @ 250μA | 1770pF @ 30V | 22nC @ 10V | 5.5ns | ±20V | 2 ns | 50A | 1.9V | 20V | 60V | 229A | 1.9 V | 6.5 pF | 1.1mm | 4.9mm | 6mm | 1mm | 无 | 无SVHC | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||
| CSD19534Q5AT | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 6V 10V | 1 | 3.2W Ta 63W Tc | 20 ns | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | 24.012046mg | SILICON | 50A Ta | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | 雪崩 额定 | DUAL | 无铅 | 260 | not_compliant | 未说明 | CSD19534 | 1 | Single | 增强型MOSFET | 3.2W | DRAIN | 9 ns | N-Channel | SWITCHING | 15.1m Ω @ 10A, 10V | 3.4V @ 250μA | 1680pF @ 50V | 22nC @ 10V | 14ns | ±20V | 6 ns | 44A | 2.8V | 20V | 100V | 55 mJ | 150°C | 7.4 pF | 1.1mm | 4.9mm | 6mm | 1mm | 无SVHC | ROHS3 Compliant | 含铅 | ||||||||||||||||||||
| CSD19531Q5A | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 6V 10V | 1 | 3.3W Ta 125W Tc | 18.4 ns | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 100A Tc | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | 雪崩 额定 | DUAL | 无铅 | 260 | not_compliant | 未说明 | CSD19531 | 1 | Single | 增强型MOSFET | DRAIN | 6 ns | N-Channel | SWITCHING | 6.4m Ω @ 16A, 10V | 3.3V @ 250μA | 3870pF @ 50V | 48nC @ 10V | 5.8ns | ±20V | 5.2 ns | 100A | 2.7V | 20V | 100V | 337A | 4.9mm | 6mm | 1mm | 无SVHC | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||
 | CSD19536KTT | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 6V 10V | 1 | 375W Tc | 32 ns | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 表面贴装 | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 3 | SILICON | 200A Ta | -55°C~175°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 2 (1 Year) | 2 | EAR99 | 雪崩 额定 | 鸥翼 | 260 | not_compliant | 未说明 | CSD19536 | 1 | Single | 增强型MOSFET | 375W | DRAIN | 13 ns | N-Channel | SWITCHING | 2.4m Ω @ 100A, 10V | 3.2V @ 250μA | 12000pF @ 50V | 153nC @ 10V | 8ns | ±20V | 6 ns | 200A | 20V | 0.0028Ohm | 100V | 400A | 806 mJ | 175°C | 4.83mm | 10.18mm | 8.41mm | 4.44mm | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||
 | CSD17551Q3A | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 4.5V 10V | 1 | 2.6W Ta | 12 ns | ACTIVE (Last Updated: 4 days ago) | Tin | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 12A Tc | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | 雪崩 额定 | DUAL | FLAT | 260 | CSD17551 | SINGLE WITH BUILT-IN DIODE | 1 | 增强型MOSFET | 2.6W | DRAIN | 8 ns | N-Channel | SWITCHING | 9m Ω @ 11A, 10V | 2.1V @ 250μA | 1370pF @ 15V | 7.8nC @ 4.5V | 24ns | ±20V | 3.4 ns | 12A | 1.6V | 20V | 30V | 150°C | 1.6 V | 900μm | 3.3mm | 3.3mm | 800μm | 无 | Unknown | ROHS3 Compliant | 无铅 |