制造商是'ON Semiconductor'
ON Semiconductor 晶体管 - FET，MOSFET - 阵列
(1027)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 晶体管元件材料 | 制造商包装标识符 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 电压 | 元素配置 | 电流 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)（最大值） | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间（典型值） | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | DS 击穿电压-最小值 | 雪崩能量等级（Eas） | 场效应管技术 | 最大结点温度（Tj） | 场效应管特性 | 栅源电压 | 反馈上限-最大值 (Crss) | 接通时间-最大值(ton) | 最小击穿电压 | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | NTJD4152PT2G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 272mW | 鸥翼 | 未说明 | 未说明 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 增强型MOSFET | 272mW | 2 P-Channel (Dual) | SWITCHING | 260m Ω @ 880mA, 4.5V | 1.2V @ 250μA | 155pF @ 20V | 2.2nC @ 4.5V | 20V | 880mA | 0.88A | 0.26Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDD8424H | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 17 Weeks | 2 | 20 ns | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 5 | 260.37mg | SILICON | 9A 6.5A | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | 24MOhm | Tin (Sn) | 3.1W | SINGLE | 鸥翼 | FDD8424 | R-PSSO-G4 | 2 | 增强型MOSFET | 3.1W | DRAIN | 7 ns | 1.3W | N and P-Channel | SWITCHING | 24m Ω @ 9A, 10V | 3V @ 250μA | 1000pF @ 20V | 20nC @ 10V | 3ns | N-CHANNEL AND P-CHANNEL | 3 ns | 9A | 1.7V | 20V | 9A | 40V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 2.517mm | 6.73mm | 6.22mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||
| FDS4559 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 2 | 19 ns | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 4.5A 3.5A | -55°C~175°C TJ | Tape & Reel (TR) | 2002 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 55MOhm | 2W | 鸥翼 | 4.5A | 2 | Dual | 增强型MOSFET | 2W | 1W | N and P-Channel | SWITCHING | 55m Ω @ 4.5A, 10V | 3V @ 250μA | 650pF @ 25V | 18nC @ 10V | 10ns | N-CHANNEL AND P-CHANNEL | 12 ns | 4.5A | 2.2V | 20V | 60V | 60V | 90 mJ | METAL-OXIDE SEMICONDUCTOR | 175°C | 逻辑电平门 | 2.2 V | 1.75mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||
| NTMD6N02R2G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 45 Weeks | 2 | 45 ns | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | SILICON | 3.92A | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 35MOhm | 逻辑电平兼容 | 20V | 2W | 鸥翼 | 260 | 6A | 40 | NTMD6N02 | 8 | Dual | 增强型MOSFET | 2W | 12 ns | 730mW | 2 N-Channel (Dual) | SWITCHING | 35m Ω @ 6A, 4.5V | 1.2V @ 250μA | 1100pF @ 16V | 20nC @ 4.5V | 50ns | 80 ns | 6.5A | 12V | 20V | 30A | 360 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 900 mV | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||
| NDC7002N | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 11 ns | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 1998 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 2Ohm | 50V | 700mW | 鸥翼 | 350mA | 2 | Dual | 增强型MOSFET | 960mW | 6 ns | 2 N-Channel (Dual) | SWITCHING | 2 Ω @ 510mA, 10V | 2.5V @ 250μA | 20pF @ 25V | 1nC @ 10V | 6ns | 6 ns | 510mA | 1.9V | 20V | 0.51A | 50V | 50V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.9 V | 900μm | 3mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||
| FDC3601N | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 11 ns | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 500MOhm | Tin (Sn) | 100V | 960mW | 鸥翼 | 1A | Dual | 增强型MOSFET | 960mW | 8 ns | 700mW | 2 N-Channel (Dual) | SWITCHING | 500m Ω @ 1A, 10V | 4V @ 250μA | 153pF @ 50V | 5nC @ 10V | 4ns | 4 ns | 1A | 2.6V | 20V | 1A | 100V | METAL-OXIDE SEMICONDUCTOR | Standard | 1mm | 3mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
| FDG6301N | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 4 ns | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 28mg | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 4Ohm | 逻辑电平兼容 | 25V | 300mW | 鸥翼 | 220mA | Dual | 增强型MOSFET | 300mW | 5 ns | 2 N-Channel (Dual) | SWITCHING | 4 Ω @ 220mA, 4.5V | 1.5V @ 250μA | 9.5pF @ 10V | 0.4nC @ 4.5V | 4.5ns | 4.5 ns | 220mA | 850mV | 8V | 25V | 25V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.1mm | 2mm | 1.25mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||
| NDC7001C | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 2 | 8 ns | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 510mA 340mA | -55°C~150°C TJ | Tape & Reel (TR) | 2002 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 2Ohm | 700mW | 鸥翼 | 350mA | 2 | Dual | 增强型MOSFET | 960mW | 2.8 ns | N and P-Channel | SWITCHING | 2 Ω @ 510mA, 10V | 2.5V @ 250μA | 20pF @ 25V | 1.5nC @ 10V | 10ns | N-CHANNEL AND P-CHANNEL | 10 ns | 510mA | 2.1V | 20V | 0.51A | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 2.1 V | 60V | 900μm | 3mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||
| FDS4935BZ | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 2 | 68 ns | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 6.9A | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 22MOhm | Tin (Sn) | ESD PROTECTION | -30V | 1.6W | 鸥翼 | -6.9A | 2 | Dual | 增强型MOSFET | 1.6W | 12 ns | 900mW | 2 P-Channel (Dual) | SWITCHING | 22m Ω @ 6.9A, 10V | 3V @ 250μA | 1360pF @ 15V | 40nC @ 10V | 13ns | 30V | 13 ns | -6.9A | -1.9V | 25V | -30V | -30V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.9 V | 1.75mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||
| FDC6303N | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 17 ns | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 450mOhm | Tin (Sn) | 逻辑电平兼容 | 25V | 900mW | 鸥翼 | 680mA | 2 | Dual | 增强型MOSFET | 900mW | 3 ns | 700mW | 2 N-Channel (Dual) | SWITCHING | 450m Ω @ 500mA, 4.5V | 1.5V @ 250μA | 50pF @ 10V | 2.3nC @ 4.5V | 8.5ns | 13 ns | 680mA | 800mV | 8V | 25V | 25V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 800 mV | 1.1mm | 3mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||
| FDC6301N | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 4 ns | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 4Ohm | 逻辑电平兼容 | 25V | 900mW | 鸥翼 | 220mA | Dual | 增强型MOSFET | 900mW | 5 ns | 700mW | 2 N-Channel (Dual) | SWITCHING | 4 Ω @ 400mA, 4.5V | 1.5V @ 250μA | 9.5pF @ 10V | 0.7nC @ 4.5V | 4.5ns | 4.5 ns | 220mA | 850mV | 8V | 25V | 25V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 850 mV | 1mm | 3mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
| FDS8958A | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 2 | 14 ns | ACTIVE (Last Updated: 15 hours ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 7A 5A | Tape & Reel (TR) | 2007 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | 28mOhm | 150°C | -55°C | 2W | DUAL | 鸥翼 | 7A | 增强型MOSFET | 2W | 900mW | N and P-Channel | SWITCHING | 28m Ω @ 7A, 10V | 3V @ 250μA | 575pF @ 15V | 16nC @ 10V | 13ns | N-CHANNEL AND P-CHANNEL | 9 ns | 7A | 1.9V | 20V | 7A | 30V | 30V | 54 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.9 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
| FDC6333C | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 2 | 11 ns | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 2.5A 2A | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 95MOhm | 960mW | 鸥翼 | 2.5A | 2 | Dual | 增强型MOSFET | 960mW | 4.5 ns | 700mW | N and P-Channel | SWITCHING | 95m Ω @ 2.5A, 10V | 3V @ 250μA | 282pF @ 15V | 6.6nC @ 10V | 13ns | 30V | N-CHANNEL AND P-CHANNEL | 13 ns | 2.5A | 1.8V | 25V | -30V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.8 V | 1mm | 3mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||
| FDS4935A | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 2 | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 48 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2002 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 23MOhm | -30V | 900mW | 鸥翼 | -7A | 30V | Dual | 7A | 增强型MOSFET | 1.6W | 13 ns | 2 P-Channel (Dual) | SWITCHING | 23m Ω @ 7A, 10V | 3V @ 250μA | 1233pF @ 15V | 21nC @ 5V | 10ns | 25 ns | 7A | -1.6V | 20V | -30V | -30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -1.6 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
| FDG8850NZ | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 9 ns | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 28mg | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 400mOhm | 360mW | 鸥翼 | 2 | Dual | 增强型MOSFET | 360mW | 4 ns | 300mW | 2 N-Channel (Dual) | SWITCHING | 400m Ω @ 750mA, 4.5V | 1.5V @ 250μA | 120pF @ 10V | 1.44nC @ 4.5V | 1ns | 1 ns | 750mA | 1V | 12V | 0.75A | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.1mm | 2mm | 1.25mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
| FDS6898A | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 34 ns | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 14MOhm | 20V | 2W | 鸥翼 | 9.4A | 2 | Dual | 增强型MOSFET | 2W | 10 ns | 900mW | 2 N-Channel (Dual) | SWITCHING | 14m Ω @ 9.4A, 4.5V | 1.5V @ 250μA | 1821pF @ 10V | 23nC @ 4.5V | 15ns | 16 ns | 9.4A | 500mV | 12V | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1 V | 1.75mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||
| FDS8984 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 42 ns | ACTIVE (Last Updated: 1 week ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 23MOhm | 30V | 1.6W | 鸥翼 | 7A | Dual | 增强型MOSFET | 1.6W | 5 ns | 2 N-Channel (Dual) | SWITCHING | 23m Ω @ 7A, 10V | 2.5V @ 250μA | 635pF @ 15V | 13nC @ 10V | 9ns | 9 ns | 7mA | 1.7V | 20V | 7A | 30V | 30A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.7 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||
| FDMQ86530L | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 22 ns | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 12-WDFN Exposed Pad | 12 | 242.3mg | SILICON | 511CR | 4 | -55°C~150°C TJ | Digi-Reel® | 2010 | GreenBridge™ PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 12 | EAR99 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 1.9W | DUAL | COMPLEX | 增强型MOSFET | 1.9W | 排水源头 | 8.8 ns | 4 N-Channel (H-Bridge) | SWITCHING | 17.5m Ω @ 8A, 10V | 3V @ 250μA | 2295pF @ 30V | 33nC @ 10V | 3.8ns | 60V | 2.8 ns | 8A | 1.8V | 20V | 8A | 0.0175Ohm | 60V | 50A | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 15 pF | 28ns | 800μm | 5mm | 4.5mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||
| NDS9948 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 16 ns | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2002 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | -60V | 2W | 鸥翼 | -2.3A | Dual | 增强型MOSFET | 2W | 6 ns | 900mW | 2 P-Channel (Dual) | SWITCHING | 250m Ω @ 2.3A, 10V | 3V @ 250μA | 394pF @ 30V | 13nC @ 10V | 9ns | 60V | 3 ns | 2.3A | -1.5V | 20V | -60V | 10A | 15 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -1.5 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
| FDY3000NZ | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 8 ns | ACTIVE (Last Updated: 23 hours ago) | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | 32mg | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 700MOhm | Tin (Sn) | ESD PROTECTION | 625mW | FLAT | 2 | Dual | 增强型MOSFET | 625mW | 6 ns | 446mW | 2 N-Channel (Dual) | SWITCHING | 700m Ω @ 600mA, 4.5V | 1.3V @ 250μA | 60pF @ 10V | 1.1nC @ 4.5V | 8ns | 8 ns | 600mA | 1V | 12V | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1 V | 700μm | 1.6mm | 1.2mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||
| FDS8858CZ | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 2 | 8.6A 7.3A | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 33 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 17mOhm | Tin (Sn) | 900mW | DUAL | 鸥翼 | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 17m Ω @ 8.6A, 10V | 3V @ 250μA | 1205pF @ 15V | 24nC @ 10V | 10ns | N-CHANNEL AND P-CHANNEL | 16 ns | 8.6A | 1.6V | 25V | -60V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.6 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
| FDG6335N | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 9 ns | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 28mg | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 300MOhm | 20V | 300mW | 鸥翼 | 700mA | Dual | 增强型MOSFET | 300mW | 5 ns | 2 N-Channel (Dual) | SWITCHING | 300m Ω @ 700mA, 4.5V | 1.5V @ 250μA | 113pF @ 10V | 1.4nC @ 4.5V | 7ns | 7 ns | 700mA | 1.1V | 12V | 0.7A | 20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.1mm | 2mm | 1.25mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
| FDS9945 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 21 Weeks | 19 ns | ACTIVE (Last Updated: 5 hours ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2001 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 100MOhm | 60V | 2W | 鸥翼 | 3.5A | Dual | 增强型MOSFET | 2W | 7 ns | 1W | 2 N-Channel (Dual) | SWITCHING | 100m Ω @ 3.5A, 10V | 3V @ 250μA | 420pF @ 30V | 13nC @ 5V | 4.3ns | 3 ns | 3.5A | 2.5V | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 2.5 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
| FDC6312P | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 18 ns | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 115MOhm | Tin (Sn) | -20V | 960mW | 鸥翼 | 未说明 | -2.3A | 未说明 | 不合格 | 2 | Dual | 增强型MOSFET | 960mW | 8 ns | 700mW | 2 P-Channel (Dual) | SWITCHING | 115m Ω @ 2.3A, 4.5V | 1.5V @ 250μA | 467pF @ 10V | 7nC @ 4.5V | 13ns | 20V | 13 ns | 2.3A | -900mV | 8V | -20V | -20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | -900 mV | 1.1mm | 3mm | 1.7mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||
| NTZD3154NT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 16 ns | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | SOT-563, SOT-666 | YES | 6 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 400MOhm | Tin (Sn) | 20V | 250mW | FLAT | 260 | 540mA | 40 | NTZD3154N | 6 | Dual | 增强型MOSFET | 250mW | 6 ns | 2 N-Channel (Dual) | SWITCHING | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 150pF @ 16V | 2.5nC @ 4.5V | 4ns | 4 ns | 540mA | 1V | 6V | 0.54A | 20V | METAL-OXIDE SEMICONDUCTOR | Standard | 600μm | 1.7mm | 1.3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 |