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NGTB45N60S1WG
TO-247-3
ON SEMICONDUCTOR NGTB45N60S1WG IGBT Single Transistor, 90 A, 2 V, 300 W, 600 V, TO-247, 3 Pins
规格参数
- 类型参数全选
生命周期状态
LAST SHIPMENTS (Last Updated: 4 days ago)
工厂交货时间
28 Weeks
底架
Through Hole
安装类型
Through Hole
包装/外壳
TO-247-3
引脚数
3
600V
400V, 45A, 10 Ω, 15V
操作温度
-55°C~175°C TJ
包装
Tube
已出版
2014
JESD-609代码
e3
无铅代码
yes
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
ECCN 代码
EAR99
端子表面处理
Tin (Sn)
最大功率耗散
300W
元素配置
Single
输入类型
Standard
功率 - 最大
300W
集电极发射器电压(VCEO)
2.4V
最大集电极电流
90A
反向恢复时间
70 ns
不同 Vge、Ic 时 Vce(on)(最大值)
2.4V @ 15V, 45A
IGBT类型
Trench
闸门收费
125nC
集极脉冲电流(Icm)
180A
Td(开/关)@25°C
72ns/132ns
开关能量
1.25mJ (on), 530μJ (off)
高度
21.4mm
长度
16.25mm
宽度
5.3mm
达到SVHC
No SVHC
RoHS状态
RoHS Compliant
无铅
Lead Free
相关型号
- 图片产品型号品牌MountPackage / CaseCollector Emitter Breakdown VoltageMax Collector CurrentMax Power DissipationCollector Emitter Saturation VoltageReverse Recovery TimeMoisture Sensitivity Level (MSL)
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NGTB45N60S1WG
Through Hole
TO-247-3
600 V
90 A
300 W
2 V
70 ns
1 (Unlimited)
-
Through Hole
TO-247-3
600 V
80 A
290 W
1.8 V
-
1 (Unlimited)
-
Through Hole
TO-247-3
600 V
80 A
349 W
1.9 V
90ns
1 (Unlimited)
-
Through Hole
TO-247-3
600 V
100 A
360 W
1.8 V
55 ns
1 (Unlimited)
-
Through Hole
TO-247-3
600 V
70 A
250 W
1.9 V
55 ns
1 (Unlimited)
NGTB45N60S1WG PDF数据手册
- 数据表 :
- PCN 报废/ EOL :
- PCN 设计/规格 :
- PCN 组装/原产地 :
- 到达声明 :