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NTB75N03R
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 25V 9.7A D2PAK
规格参数
- 类型参数全选
底架
Surface Mount
安装类型
Surface Mount
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
引脚数
3
晶体管元件材料
SILICON
9.7A Ta 75A Tc
4.5V 10V
1
1.25W Ta 74.4W Tc
18.4 ns
操作温度
-55°C~150°C TJ
包装
Tube
已出版
2006
JESD-609代码
e0
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
终止次数
2
端子表面处理
Tin/Lead (Sn/Pb)
HTS代码
8541.29.00.95
电压 - 额定直流
25V
终端形式
GULL WING
峰值回流焊温度(摄氏度)
235
Reach合规守则
not_compliant
额定电流
75A
时间@峰值回流温度-最大值(s)
NOT SPECIFIED
引脚数量
3
JESD-30代码
R-PSSO-G2
资历状况
Not Qualified
元素配置
Single
操作模式
ENHANCEMENT MODE
功率耗散
74.4W
箱体转运
DRAIN
场效应管类型
N-Channel
晶体管应用
SWITCHING
Rds On(Max)@Id,Vgs
8m Ω @ 20A, 10V
不同 Id 时 Vgs(th)(最大值)
2V @ 250μA
输入电容(Ciss)(Max)@Vds
1333pF @ 20V
门极电荷(Qg)(最大)@Vgs
13.2nC @ 10V
Vgs(最大值)
±20V
连续放电电流(ID)
75A
栅极至源极电压(Vgs)
20V
最大漏极电流 (Abs) (ID)
9.7A
漏源击穿电压
25V
脉冲漏极电流-最大值(IDM)
225A
雪崩能量等级(Eas)
71.7 mJ
RoHS状态
Non-RoHS Compliant
无铅
Contains Lead
相关型号
- 图片产品型号品牌MountPackage / CaseContinuous Drain Current (ID)Current - Continuous Drain (Id) @ 25°CGate to Source Voltage (Vgs)Power DissipationPower Dissipation-MaxVgs (Max)
-
NTB75N03R
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
75 A
9.7A (Ta), 75A (Tc)
20 V
74.4 W
1.25W (Ta), 74.4W (Tc)
±20V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
74 A
74A (Tc)
20 V
80 W
80W (Tc)
±20V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
74 A
74A (Tc)
20 V
80 W
80W (Tc)
±20V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
90 A
90A (Ta)
20 V
85 W
85W (Tc)
±20V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
36 A
36A (Tc)
20 V
35 W
35W (Tc)
±20V
NTB75N03R PDF数据手册
- 数据表 :
- PCN 报废/ EOL :
- 到达声明 :