
APT35GP120B2DF2
-
Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel, B2, TMAX-3
规格参数
- 类型参数全选
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
Obsolete
ADVANCED POWER TECHNOLOGY INC
IN-LINE, R-PSIP-T3
1
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
220 ns
36 ns
ECCN 代码
EAR99
附加功能
LOW CONDUCTION LOSS
端子位置
SINGLE
终端形式
THROUGH-HOLE
Reach合规守则
unknown
JESD-30代码
R-PSIP-T3
资历状况
Not Qualified
配置
SINGLE WITH BUILT-IN DIODE
箱体转运
COLLECTOR
晶体管应用
POWER CONTROL
极性/通道类型
N-CHANNEL
集电极电流-最大值(IC)
96 A
集电极-发射器电压-最大值
1200 V