
APT15GP60BDF1
-
Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
规格参数
- 类型参数全选
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
Obsolete
ADVANCED POWER TECHNOLOGY INC
TO-247, 3 PIN
1
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
157 ns
20 ns
ECCN 代码
EAR99
附加功能
LOW CONDUCTION LOSS
端子位置
SINGLE
终端形式
THROUGH-HOLE
Reach合规守则
unknown
JESD-30代码
R-PSFM-T3
资历状况
Not Qualified
配置
SINGLE WITH BUILT-IN DIODE
箱体转运
COLLECTOR
晶体管应用
POWER CONTROL
极性/通道类型
N-CHANNEL
JEDEC-95代码
TO-247AD
集电极电流-最大值(IC)
56 A
集电极-发射器电压-最大值
600 V