类别是'存储器连接器 - 配件'
存储器连接器 - 配件 (752)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 厂商 | 操作温度 | 包装 | 系列 | JESD-609代码 | 无铅代码 | ECCN 代码 | 类型 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 产品类别 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | I/O类型 | 内存IC类型 | 刷新周期 | 顺序突发长度 | 交错突发长度 | 访问模式 | 自我刷新 | 产品类别 | 库存数量 | 组织的记忆 | 长度 | 宽度 | 辐射硬化 | ||||||||||||||||||||||||||||||||||
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![]() | M38510/31902BFA | Rochester Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | ROCHESTER ELECTRONICS LLC | DFP | DFP, FL16,.3 | 5.16 | 4 words | 4 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DFP | FL16,.3 | RECTANGULAR | FLATPACK | 5 V | Military grade | YES | 16 | M38510/31902BFA | e0 | 锡铅 | 8542.32.00.71 | DUAL | FLAT | 1 | 1.27 mm | unknown | 16 | R-CDFP-F16 | Qualified | 5.5 V | 5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 4X4 | 4 | 16 bit | MIL-PRF-38535 Class B | 存储器电路 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS43TR82560CL-125KBL | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 有 | 活跃 | INTEGRATED SILICON SOLUTION INC | TFBGA, | 5.6 | 3 | 268435456 words | 256000000 | 85 °C | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.35 V | 10 | 800 MHz | TWBGA | 8 Bit | 表面贴装 | Bulk | 活跃 | Volatile | 有 | 242 | SMD/SMT | ISSI | Details | Commercial grade | DRAM | 表面贴装 | 78-TFBGA | YES | 78-TWBGA (8x10.5) | 78 | ISSI, Integrated Silicon Solution Inc | IS43TR82560CL-125KBL | 0 to 95 °C | Reel | - | e1 | EAR99 | DDR3L SDRAM | Tin/Silver/Copper (Sn/Ag/Cu) | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | Memory & Data Storage | 1.283V ~ 1.45V | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 78 | R-PBGA-B78 | 1.3500 V | 1.45 V | OTHER | 1.283 V | 2Gbit | 1 | SYNCHRONOUS | 800 MHz | 20 ns | DRAM | Parallel | 8 Bit | 256MX8 | 1.2 mm | 8 | 15ns | 15 Bit | 2 Gbit | 2147483648 bit | Commercial | DDR DRAM | 多库页面突发 | YES | DRAM | 8 | 256M x 8 | 10.5 mm | 8 mm | ||||||||||||||||||||||||||
![]() | IS43R86400E-6TL | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 有 | 活跃 | INTEGRATED SILICON SOLUTION INC | TSOP2, | 5.61 | 0.7 ns | 67108864 words | 64000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 2.5 V | 未说明 | Bulk | 活跃 | Volatile | 表面贴装 | 66-TSSOP (0.400, 10.16mm Width) | YES | 66-TSOP II | 66 | ISSI, Integrated Silicon Solution Inc | IS43R86400E-6TL | 0°C ~ 70°C (TA) | - | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 2.3V ~ 2.7V | DUAL | 鸥翼 | 未说明 | 1 | 0.65 mm | compliant | R-PDSO-G66 | 2.7 V | COMMERCIAL | 2.3 V | 512Mbit | 1 | SYNCHRONOUS | 166 MHz | 700 ps | DRAM | SSTL_2 | 64MX8 | 1.2 mm | 8 | 15ns | 536870912 bit | DDR DRAM | 四库页面突发 | YES | 64M x 8 | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS43R16320F-5TL | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 有 | 活跃 | INTEGRATED SILICON SOLUTION INC | TSOP2, | 5.59 | 0.7 ns | 33554432 words | 32000000 | 70 °C | 未说明 | 2.5 V | SMALL OUTLINE, THIN PROFILE | RECTANGULAR | TSOP2 | PLASTIC/EPOXY | Bulk | 活跃 | Volatile | 有 | 108 | SMD/SMT | ISSI | Details | DRAM | 表面贴装 | 66-TSSOP (0.400, 10.16mm Width) | YES | 66-TSOP II | 66 | ISSI, Integrated Silicon Solution Inc | IS43R16320F-5TL | 0°C ~ 70°C (TA) | - | EAR99 | SDRAM - DDR | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | Memory & Data Storage | 2.3V ~ 2.7V | DUAL | 鸥翼 | 未说明 | 1 | 0.65 mm | compliant | R-PDSO-G66 | 2.7 V | COMMERCIAL | 2.3 V | 512Mbit | 1 | SYNCHRONOUS | 200 MHz | 700 ps | DRAM | SSTL_2 | 32MX16 | 1.2 mm | 16 | 15ns | 536870912 bit | DDR DRAM | 四库页面突发 | YES | DRAM | 32M x 16 | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||
![]() | IS43R86400E-5TL | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 有 | 活跃 | INTEGRATED SILICON SOLUTION INC | TSOP2, | 70 °C | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 2.5 V | 未说明 | 64000000 | 67108864 words | 0.7 ns | 5.59 | Bulk | 活跃 | Volatile | 表面贴装 | 66-TSSOP (0.400, 10.16mm Width) | YES | 66-TSOP II | 66 | ISSI, Integrated Silicon Solution Inc | IS43R86400E-5TL | 0°C ~ 70°C (TA) | - | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 2.3V ~ 2.7V | DUAL | 鸥翼 | 未说明 | 1 | 0.65 mm | compliant | R-PDSO-G66 | 2.7 V | COMMERCIAL | 2.3 V | 512Mbit | 1 | SYNCHRONOUS | 200 MHz | 700 ps | DRAM | SSTL_2 | 64MX8 | 1.2 mm | 8 | 15ns | 536870912 bit | DDR DRAM | 四库页面突发 | YES | 64M x 8 | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS46DR16128B-3DBLA2 | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 不推荐 | INTEGRATED SILICON SOLUTION INC | BGA | TFBGA, BGA84,9X15,32 | 5.69 | 0.45 ns | 333 MHz | 134217728 words | 128000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | Automotive grade | YES | 84 | IS46DR16128B-3DBLA2 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | 1 | 0.8 mm | compliant | 84 | R-PBGA-B84 | 不合格 | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.485 mA | 128MX16 | 3-STATE | 1.2 mm | 16 | 0.03 A | 2147483648 bit | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 多库页面突发 | YES | 13.5 mm | 10.5 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS43DR16320B-3DBLI | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | DSBGA | TFBGA, BGA84,9X15,32 | 5.61 | 0.45 ns | 333 MHz | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 40 | YES | 84 | IS43DR16320B-3DBLI | e1 | 有 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 84 | R-PBGA-B84 | 不合格 | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.34 mA | 32MX16 | 3-STATE | 1.2 mm | 16 | 0.008 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 四库页面突发 | YES | 13 mm | 10.5 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS43DR32801A-5BBLI | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | BGA | LFBGA, BGA126,12X16,32 | 5.67 | 0.6 ns | 200 MHz | 3 | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFBGA | BGA126,12X16,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 1.8 V | 10 | Compliant | 表面贴装 | YES | 126 | 126 | IS43DR32801A-5BBLI | e1 | 有 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | -40 °C | CAS BEFORE RAS/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 126 | R-PBGA-B126 | 不合格 | 1.8 V | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.9 V | 1.7 V | 32 MB | 1 | 210 mA | SYNCHRONOUS | 0.43 mA | 600 ps | 32 b | 8MX32 | 3-STATE | 1.4 mm | 32 | 15 b | 256 Mb | 0.008 A | 268435456 bit | 400 MHz | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 四库页面突发 | YES | 14 mm | 11 mm | 无 | |||||||||||||||||||||||||||||||||
![]() | IS43R32400D-4BL-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INTEGRATED SILICON SOLUTION INC | , | 5.84 | Compliant | IS43R32400D-4BL-TR | 70 °C | 0 °C | compliant | 2.7 V | 2.3 V | 16 MB | 700 ps | 32 b | 250 MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS45S16400F-7CTNA2 | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | TSOP2 | TSOP2, TSOP54,.46,32 | 5.1 | 5.4 ns | 143 MHz | 4194304 words | 4000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 3.3 V | 未说明 | Compliant | YES | 54 | IS45S16400F-7CTNA2 | e4 | 有 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 105 °C | -40 °C | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | 鸥翼 | 未说明 | 1 | 0.8 mm | compliant | 54 | R-PDSO-G54 | 不合格 | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | 3.6 V | 3 V | 8 MB | 1 | SYNCHRONOUS | 0.145 mA | 5.4 ns | 16 b | 4MX16 | 3-STATE | 1.2 mm | 16 | 0.003 A | 67108864 bit | 143 MHz | COMMON | 同步剧 | 4096 | 1,2,4,8,FP | 1,2,4,8 | 四库页面突发 | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||
![]() | IS45S16400E-7TLA1 | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | TSOP2 | TSOP2, TSOP54,.46,32 | 5.62 | 5.4 ns | 143 MHz | 3 | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | 10 | 3.3 V | SMALL OUTLINE, THIN PROFILE | RECTANGULAR | TSOP54,.46,32 | TSOP2 | YES | 54 | IS45S16400E-7TLA1 | e3 | 有 | EAR99 | Matte Tin (Sn) - annealed | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | 鸥翼 | 260 | 1 | 0.8 mm | compliant | 54 | R-PDSO-G54 | 不合格 | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | 0.13 mA | 4MX16 | 3-STATE | 1.2 mm | 16 | 0.001 A | 67108864 bit | COMMON | 同步剧 | 4096 | 1,2,4,8,FP | 1,2,4,8 | 四库页面突发 | YES | 22.22 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS45S32160F-7BLA2 | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 活跃 | INTEGRATED SILICON SOLUTION INC | TFBGA, | 5.68 | 5.4 ns | 16777216 words | 16000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 3.3 V | 未说明 | YES | 90 | IS45S32160F-7BLA2 | EAR99 | AUTO/SELF REFRESH | BOTTOM | BALL | 未说明 | 1 | 0.8 mm | compliant | R-PBGA-B90 | 3.6 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | 16MX32 | 1.2 mm | 32 | 536870912 bit | 同步剧 | 四库页面突发 | YES | 13 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS46DR16320B-3DBLA1-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA84,9X15,32 | 5.84 | 0.45 ns | 333 MHz | 1 | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 未说明 | Compliant | Automotive grade | YES | 84 | IS46DR16320B-3DBLA1-TR | e3 | 有 | Matte Tin (Sn) | 95 °C | -40 °C | AUTO/SELF REFRESH | BOTTOM | BALL | 225 | 1 | 0.8 mm | compliant | R-PBGA-B84 | 不合格 | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.9 V | 1.7 V | 64 MB | 1 | SYNCHRONOUS | 0.34 mA | 450 ps | 16 b | 32MX16 | 3-STATE | 1.2 mm | 16 | 0.008 A | 536870912 bit | 333 MHz | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 四库页面突发 | YES | 13 mm | 10.5 mm | ||||||||||||||||||||||||||||||||||||||||||
![]() | IS43DR16320B-3DBLI-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA84,9X15,32 | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 未说明 | -40 °C | 85 °C | 32000000 | 33554432 words | 1 | 333 MHz | 0.45 ns | 5.83 | YES | 84 | IS43DR16320B-3DBLI-TR | e3 | 有 | Matte Tin (Sn) | AUTO/SELF REFRESH | BOTTOM | BALL | 225 | 1 | 0.8 mm | compliant | R-PBGA-B84 | 不合格 | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.34 mA | 32MX16 | 3-STATE | 1.2 mm | 16 | 0.008 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 四库页面突发 | YES | 13 mm | 10.5 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS43TR81280ED-15HBLI | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 活跃 | INTEGRATED SILICON SOLUTION INC | FBGA-78 | 5.61 | 3 | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.5 V | 10 | YES | 78 | IS43TR81280ED-15HBLI | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | R-PBGA-B78 | 1.575 V | INDUSTRIAL | 1.425 V | 1 | SYNCHRONOUS | 128MX8 | 1.2 mm | 8 | 1073741824 bit | DDR DRAM | 多库页面突发 | YES | 10.5 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS45S16400F-7CTNA2-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INTEGRATED SILICON SOLUTION INC | , | 5.84 | IS45S16400F-7CTNA2-TR | unknown | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS46DR16160A-5BBLA1-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA84,9X15,32 | 5.84 | 0.6 ns | 200 MHz | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | Automotive grade | YES | 84 | IS46DR16160A-5BBLA1-TR | AUTO/SELF REFRESH | BOTTOM | BALL | 1 | 0.8 mm | compliant | R-PBGA-B84 | 不合格 | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.21 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.005 A | 268435456 bit | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 四库页面突发 | YES | 12.5 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS45S16800E-7CTNA2-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | 5.84 | 5.4 ns | 143 MHz | 8388608 words | 8000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TSOP | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 3.3 V | YES | 54 | IS45S16800E-7CTNA2-TR | DUAL | 鸥翼 | 0.8 mm | unknown | R-PDSO-G54 | 不合格 | 3.3 V | INDUSTRIAL | 0.16 mA | 8MX16 | 3-STATE | 16 | 0.001 A | 134217728 bit | COMMON | 同步剧 | 4096 | 1,2,4,8,FP | 1,2,4,8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS42VM32200G-75BLI-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 活跃 | INTEGRATED SILICON SOLUTION INC | FBGA, BGA90,9X15,32 | 5.75 | 6 ns | 133 MHz | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | 1.8 V | YES | 90 | IS42VM32200G-75BLI-TR | BOTTOM | BALL | 0.8 mm | compliant | R-PBGA-B90 | 不合格 | 1.8 V | INDUSTRIAL | 0.075 mA | 2MX32 | 3-STATE | 32 | 0.00003 A | 67108864 bit | COMMON | 同步剧 | 4096 | 1,2,4,8,FP | 1,2,4,8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS43DR16640A-3DBI-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 无 | Obsolete | INTEGRATED SILICON SOLUTION INC | 8 X 13.65 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, MO-207, TWBGA-84 | 5.92 | 0.45 ns | 333 MHz | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | YES | 84 | IS43DR16640A-3DBI-TR | AUTO/SELF REFRESH | BOTTOM | BALL | 1 | 0.8 mm | unknown | R-PBGA-B84 | 不合格 | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.35 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.015 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 多库页面突发 | YES | 13.65 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS45S16100F-7TLA1-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INTEGRATED SILICON SOLUTION INC | , | 5.84 | Compliant | IS45S16100F-7TLA1-TR | 85 °C | -40 °C | compliant | 3.6 V | 3 V | 2 MB | 5.5 ns | 16 b | 143 MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS43R16160B-5BLI-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INTEGRATED SILICON SOLUTION INC | , | 5.84 | IS43R16160B-5BLI-TR | unknown | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS42VS16100E-10TLI-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 有 | 活跃 | INTEGRATED SILICON SOLUTION INC | TSOP2, TSOP50,.46,32 | 5.47 | 7 ns | 100 MHz | 1 | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP50,.46,32 | RECTANGULAR | 未说明 | 1.8 V | SMALL OUTLINE, THIN PROFILE | YES | 50 | IS42VS16100E-10TLI-TR | e3 | 有 | Matte Tin (Sn) | AUTO/SELF REFRESH | DUAL | 鸥翼 | 225 | 1 | 0.8 mm | compliant | R-PDSO-G50 | 不合格 | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.05 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.00001 A | 16777216 bit | COMMON | 高速缓冲存储器模块 | 2048 | 1,2,4,8,FP | 1,2,4,8 | 双库页面突发 | YES | 20.95 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS43R16160B-6BL-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INTEGRATED SILICON SOLUTION INC | , | 5.84 | IS43R16160B-6BL-TR | unknown | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS43R16160B-5BL-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INTEGRATED SILICON SOLUTION INC | , | 5.84 | IS43R16160B-5BL-TR | unknown |