制造商是'ON Semiconductor'
ON Semiconductor 晶体管 - IGBT - 单个
(654)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 引脚数 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 电压 - 额定直流 | 最大功率耗散 | 终端形式 | 峰值回流焊温度（摄氏度） | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | JESD-30代码 | 上升时间-最大值 | 极性 | 元素配置 | 功率耗散 | 箱体转运 | 输入类型 | 接通延迟时间 | 功率 - 最大 | 晶体管应用 | 上升时间 | 极性/通道类型 | 集电极发射器电压(VCEO) | 最大集电极电流 | 反向恢复时间 | JEDEC-95代码 | 电压 - 集射极击穿（最大值） | 最大击穿电压 | 接通时间 | 不同 Vge、Ic 时 Vce(on)（最大值） | 最大结点温度（Tj） | 连续集电极电流 | 关断时间-标准值（toff) | IGBT类型 | 闸门收费 | 集极脉冲电流（Icm） | Td（开/关）@25°C | 开关能量 | 栅极-发射极电压-最大值 | 栅极-发射极Thr电压-最大值 | 最大下降时间 (tf) | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||
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 | FGA60N65SMD | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 1 | 400V, 60A, 3 Ω, 15V | 104 ns | ACTIVE (Last Updated: 4 days ago) | 通孔 | 通孔 | TO-3P-3, SC-65-3 | 3 | 6.401g | SILICON | 650V | -55°C~175°C TJ | Tube | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | 低导通损耗 | 8541.29.00.95 | 600W | 70ns | Single | Standard | 18 ns | 600W | 电源控制 | N-CHANNEL | 650V | 120A | 47 ns | 2.5V @ 15V, 60A | 场站 | 189nC | 180A | 18ns/104ns | 1.54mJ (on), 450μJ (off) | 20V | 6V | 68ns | 20.1mm | 15.8mm | 5mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||
 | FGL40N120ANDTU | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 1 | 600V, 40A, 5 Ω, 15V | 110 ns | ACTIVE (Last Updated: 6 days ago) | Tin | 通孔 | 通孔 | TO-264-3, TO-264AA | 3 | 6.756g | SILICON | 1.2kV | -55°C~150°C TJ | Tube | 2008 | e3 | yes | 不用于新设计 | 1 (Unlimited) | 3 | EAR99 | 8541.29.00.95 | 1.2kV | 500W | 64A | Single | 500W | Standard | 15 ns | 电源控制 | 20ns | N-CHANNEL | 1.2kV | 64A | 112 ns | 1200V | 45 ns | 3.2V @ 15V, 40A | 150°C | 64A | 165 ns | NPT | 220nC | 160A | 15ns/110ns | 2.3mJ (on), 1.1mJ (off) | 29mm | 20mm | 5mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||
 | FGH40T120SMD-F155 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 600V, 40A, 10 Ω, 15V | 475 ns | ACTIVE (Last Updated: 4 days ago) | Tin | 通孔 | 通孔 | TO-247-3 | 3 | 6.39g | 1.2kV | -55°C~175°C TJ | Tube | 2013 | yes | 活跃 | 1 (Unlimited) | 555W | Single | 555W | Standard | 40 ns | N-CHANNEL | 1.2kV | 80A | 65 ns | 1200V | 2.4V @ 15V, 40A | 175°C | 80A | 沟渠现场停车 | 370nC | 160A | 40ns/475ns | 2.7mJ (on), 1.1mJ (off) | 25V | 7.5V | 24.75mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
 | HGTG11N120CND | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 1 | 960V, 11A, 10 Ω, 15V | 180 ns | ACTIVE, NOT REC (Last Updated: 2 days ago) | 通孔 | 通孔 | TO-247-3 | 3 | 6.39g | SILICON | 1.2kV | -55°C~150°C TJ | Tube | 2016 | e3 | yes | 不用于新设计 | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | 低导通损耗 | 8541.29.00.95 | 1.2kV | 298W | 43A | NPN | Single | 298W | Standard | 23 ns | MOTOR CONTROL | 1.2kV | 43A | 70 ns | 1200V | 33 ns | 2.4V @ 15V, 11A | 570 ns | NPT | 100nC | 80A | 23ns/180ns | 950μJ (on), 1.3mJ (off) | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||
 | FGH60N60SMD | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 1 | 400V, 60A, 3 Ω, 15V | 146 ns | ACTIVE (Last Updated: 5 days ago) | Tin | 通孔 | 通孔 | TO-247-3 | 3 | 6.39g | SILICON | 600V | -55°C~175°C TJ | Tube | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 低导通损耗 | 8541.29.00.95 | 600W | FGH60N60 | 70ns | Single | COLLECTOR | Standard | 27 ns | 600W | 电源控制 | N-CHANNEL | 600V | 120A | 39 ns | TO-247AB | 59 ns | 2.5V @ 15V, 60A | 163 ns | 场站 | 189nC | 180A | 18ns/104ns | 1.26mJ (on), 450μJ (off) | 20V | 6V | 68ns | 20.6mm | 15.6mm | 4.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||
 | HGT1S10N120BNST | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 1 | 960V, 10A, 10 Ω, 15V | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | 1.31247g | SILICON | 1.2kV | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | e3 | yes | 活跃 | 1 (Unlimited) | 2 | EAR99 | Tin (Sn) | 低导通损耗 | 8541.29.00.95 | 1.2kV | 298W | 鸥翼 | 35A | HGT1S10N120 | R-PSSO-G2 | 15ns | Single | 298W | COLLECTOR | Standard | MOTOR CONTROL | N-CHANNEL | 1.2kV | 35A | 1200V | 1.2kV | 32 ns | 2.7V @ 15V, 10A | 55A | 330 ns | NPT | 100nC | 80A | 23ns/165ns | 320μJ (on), 800μJ (off) | 20V | 200ns | 4.83mm | 10.67mm | 9.65mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||
| HGTG30N60A4D | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 1 | 390V, 30A, 3 Ω, 15V | 150 ns | ACTIVE, NOT REC (Last Updated: 2 days ago) | Tin | 通孔 | 通孔 | TO-247-3 | 3 | 6.39g | SILICON | 600V | -55°C~150°C TJ | Tube | 2016 | e3 | yes | 不用于新设计 | 1 (Unlimited) | 3 | EAR99 | 低导通损耗 | 8541.29.00.95 | 600V | 463W | 30A | HGTG30N60 | Single | 463W | COLLECTOR | Standard | 25 ns | 电源控制 | 12s | N-CHANNEL | 600V | 75A | 55ns | 35 ns | 2.6V @ 15V, 30A | 238 ns | 225nC | 240A | 25ns/150ns | 280μJ (on), 240μJ (off) | 20.82mm | 15.87mm | 4.82mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||
| FGH40N60UFDTU | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 1 | 400V, 40A, 10 Ω, 15V | 112 ns | ACTIVE (Last Updated: 4 days ago) | 通孔 | 通孔 | TO-247-3 | 3 | 6.39g | SILICON | 600V | -55°C~150°C TJ | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | 低导通损耗 | 8541.29.00.95 | 290W | FGH40N60 | Single | COLLECTOR | Standard | 24 ns | 290W | 电源控制 | N-CHANNEL | 600V | 80A | 45 ns | TO-247AB | 110 ns | 2.4V @ 15V, 40A | 190 ns | 场站 | 120nC | 120A | 24ns/112ns | 1.19mJ (on), 460μJ (off) | 20V | 6.5V | 100ns | 20.6mm | 15.6mm | 4.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||
| FGH40N60SMD | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 1 | 400V, 40A, 6 Ω, 15V | 通孔 | 通孔 | TO-247-3 | 3 | 6.39g | SILICON | 600V | -55°C~175°C TJ | Tube | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | 低导通损耗 | 8541.29.00.95 | 349W | FGH40N60 | 28ns | Single | COLLECTOR | Standard | 349W | 电源控制 | N-CHANNEL | 600V | 80A | 36 ns | TO-247AB | 37 ns | 2.5V @ 15V, 40A | 132 ns | 场站 | 119nC | 120A | 12ns/92ns | 870μJ (on), 260μJ (off) | 20V | 6V | 17ns | 20.6mm | 15.6mm | 4.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||
| HGTG5N120BND | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1 | 960V, 5A, 25 Ω, 15V | ACTIVE, NOT REC (Last Updated: 2 days ago) | Tin | 通孔 | 通孔 | TO-247-3 | 3 | 6.39g | SILICON | 1.2kV | -55°C~150°C TJ | Tube | e3 | yes | 不用于新设计 | 1 (Unlimited) | 3 | EAR99 | 低导通损耗 | 8541.29.00.95 | 1.2kV | 167W | 21A | Single | 167W | COLLECTOR | Standard | MOTOR CONTROL | N-CHANNEL | 1.2kV | 21A | 65 ns | 1200V | 600V | 35 ns | 2.7V @ 15V, 5A | 21A | 357 ns | NPT | 53nC | 40A | 22ns/160ns | 450μJ (on), 390μJ (off) | 20.82mm | 15.87mm | 4.82mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||
 | FGA25N120ANTDTU-F109 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 600V, 25A, 10 Ω, 15V | ACTIVE (Last Updated: 3 days ago) | 通孔 | 通孔 | TO-3P-3, SC-65-3 | 3 | 6.401g | 1.2kV | -55°C~150°C TJ | Tube | 2004 | yes | 活跃 | 1 (Unlimited) | EAR99 | 312W | FGA25N120A | 90ns | Single | Standard | 312W | N-CHANNEL | 1.2kV | 50A | 350 ns | 1200V | 2.65V @ 15V, 50A | NPT和沟槽 | 200nC | 90A | 50ns/190ns | 4.1mJ (on), 960μJ (off) | 20V | 7.5V | 180ns | 18.9mm | 15.8mm | 5mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||
| HGTG20N60B3D | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1 | 220 ns | ACTIVE, NOT REC (Last Updated: 2 days ago) | 通孔 | 通孔 | TO-247-3 | 3 | 6.39g | SILICON | 600V | -40°C~150°C TJ | Tube | 2011 | e3 | yes | 不用于新设计 | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | 低导通损耗 | 8541.29.00.95 | 600V | 165W | 20A | HGTG20N60 | NPN | Single | 165W | COLLECTOR | Standard | 25 ns | MOTOR CONTROL | 20ns | 600V | 40A | 55ns | 600V | 45 ns | 2V @ 15V, 20A | 360 ns | 80nC | 160A | 475μJ (on), 1.05mJ (off) | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||
| HGTG12N60A4D | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 1 | 390V, 12A, 10 Ω, 15V | 96 ns | ACTIVE, NOT REC (Last Updated: 2 days ago) | Tin | 通孔 | 通孔 | TO-247-3 | 3 | 6.39g | SILICON | 600V | -55°C~150°C TJ | Tube | 2002 | e3 | yes | 不用于新设计 | 1 (Unlimited) | 3 | EAR99 | 低导通损耗 | 8541.29.00.95 | 600V | 167W | 54A | HGTG12N60 | Single | 167W | COLLECTOR | Standard | 17 ns | 电源控制 | 16ns | N-CHANNEL | 600V | 54A | 30 ns | 33 ns | 2.7V @ 15V, 12A | 60A | 180 ns | 78nC | 96A | 17ns/96ns | 55μJ (on), 50μJ (off) | 20.82mm | 15.87mm | 4.82mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||
| FGA25N120ANTDTU | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 600V, 25A, 10 Ω, 15V | 190 ns | 通孔 | 通孔 | TO-3P-3, SC-65-3 | 3 | 6.40101g | 1.2kV | -55°C~150°C TJ | Tube | 2004 | e3 | 活跃 | 1 (Unlimited) | EAR99 | Tin (Sn) | 8541.29.00.95 | 1.2kV | 312W | 50A | FGA25N120A | Single | 312mW | Standard | 50 ns | 60ns | N-CHANNEL | 1.2kV | 50A | 350 ns | 1200V | 2.65V @ 15V, 50A | 150°C | 50A | NPT和沟槽 | 200nC | 90A | 50ns/190ns | 4.1mJ (on), 960μJ (off) | 20V | 7.5V | 23.8mm | 15.8mm | 5mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||
| HGTG20N60A4D | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 1 | 390V, 20A, 3 Ω, 15V | 73 ns | ACTIVE, NOT REC (Last Updated: 2 days ago) | 通孔 | 通孔 | TO-247-3 | 3 | 6.39g | SILICON | 600V | -55°C~150°C TJ | Tube | 2011 | e3 | yes | 不用于新设计 | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | 低导通损耗 | 8541.29.00.95 | 600V | 290W | 70A | HGTG20N60 | Single | 290W | COLLECTOR | Standard | 15 ns | 电源控制 | 12ns | N-CHANNEL | 600V | 70A | 35 ns | 600V | 28 ns | 2.7V @ 15V, 20A | 160 ns | 142nC | 280A | 15ns/73ns | 105μJ (on), 150μJ (off) | 20.82mm | 15.87mm | 4.82mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||
 | HGTP5N120BND | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 1 | 960V, 5A, 25 Ω, 15V | ACTIVE, NOT REC (Last Updated: 2 days ago) | 通孔 | 通孔 | TO-220-3 | 3 | 1.8g | SILICON | 1.2kV | -55°C~150°C TJ | Tube | e3 | yes | 不用于新设计 | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | 低导通损耗 | 8541.29.00.95 | 1.2kV | 167W | 21A | Single | 167W | COLLECTOR | Standard | MOTOR CONTROL | N-CHANNEL | 1.2kV | 21A | 65ns | TO-220AB | 1200V | 35 ns | 2.7V @ 15V, 5A | 21A | 357 ns | NPT | 53nC | 40A | 22ns/160ns | 450μJ (on), 390μJ (off) | 9.4mm | 10.67mm | 4.83mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||
| HGTP10N120BN | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 44 Weeks | 1 | 960V, 10A, 10 Ω, 15V | ACTIVE, NOT REC (Last Updated: 2 days ago) | 通孔 | 通孔 | TO-220-3 | 3 | 1.8g | SILICON | 1.2kV | -55°C~150°C TJ | Tube | e3 | yes | 不用于新设计 | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | 低导通损耗 | 8541.29.00.95 | 1.2kV | 49.2W | 35A | Single | 298W | COLLECTOR | Standard | MOTOR CONTROL | N-CHANNEL | 1.2kV | 35A | 1200V | 300V | 32 ns | 2.7V @ 15V, 10A | 35A | 330 ns | NPT | 100nC | 80A | 23ns/165ns | 320μJ (on), 800μJ (off) | 9.4mm | 10.67mm | 4.83mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||
| FGA40N65SMD | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 1 | 400V, 40A, 6 Ω, 15V | 92 ns | ACTIVE (Last Updated: 3 days ago) | Tin | 通孔 | 通孔 | TO-3P-3, SC-65-3 | 3 | 6.401g | SILICON | 650V | -55°C~175°C TJ | Tube | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 低导通损耗 | 8541.29.00.95 | 349W | 28ns | Single | 349W | Standard | 12 ns | 电源控制 | N-CHANNEL | 650V | 80A | 42 ns | 2.5V @ 15V, 40A | 场站 | 119nC | 120A | 12ns/92ns | 820μJ (on), 260μJ (off) | 20V | 6V | 17ns | 20.1mm | 16.2mm | 5mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||
 | HGTD1N120BNS9A | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 1 | 960V, 1A, 82 Ω, 15V | 67 ns | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | 260.37mg | SILICON | 1.2kV | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | yes | 活跃 | 1 (Unlimited) | 2 | EAR99 | LOW CONDUCTION LOSS, AVALANCHE RATED | 8541.29.00.95 | 1.2kV | 60W | 鸥翼 | 5.3A | HGTD1N120 | R-PSSO-G2 | 14ns | Single | 60W | COLLECTOR | Standard | 15 ns | MOTOR CONTROL | N-CHANNEL | 1.2kV | 5.3A | TO-252AA | 1200V | 1.2kV | 24 ns | 2.9V @ 15V, 1A | 333 ns | NPT | 14nC | 6A | 15ns/67ns | 70μJ (on), 90μJ (off) | 20V | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||
 | NGTB25N120FL2WG | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 33 Weeks | 600V, 25A, 10 Ω, 15V | ACTIVE (Last Updated: 1 day ago) | 通孔 | 通孔 | TO-247-3 | 3 | 1.2kV | -55°C~175°C TJ | Tube | 2014 | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | Tin (Sn) | 385W | 未说明 | 未说明 | Single | Standard | 385W | N-CHANNEL | 2.4V | 50A | 154 ns | 1200V | 2.4V @ 15V, 25A | 场站 | 178nC | 100A | 87ns/179ns | 1.95mJ (on), 600μJ (off) | 20V | 6.5V | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
| FGH40N60SMDF | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 1 | 400V, 40A, 6 Ω, 15V | 92 ns | Tin | 通孔 | 通孔 | TO-247-3 | 3 | 6.39g | SILICON | 600V | -55°C~175°C TJ | Tube | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 8541.29.00.95 | 349W | FGH40N60 | 28ns | Single | 349W | COLLECTOR | Standard | 12 ns | 电源控制 | N-CHANNEL | 600V | 80A | 90ns | TO-247AB | 37 ns | 2.5V @ 15V, 40A | 132 ns | 场站 | 119nC | 120A | 12ns/92ns | 1.3mJ (on), 260μJ (off) | 20V | 6V | 17ns | 20.6mm | 15.6mm | 4.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||
| FGH40T120SMD | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 600V, 40A, 10 Ω, 15V | 475 ns | ACTIVE (Last Updated: 4 days ago) | 通孔 | 通孔 | TO-247-3 | 3 | 6.39g | 1.2kV | -55°C~175°C TJ | Tube | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | Tin (Sn) | 8541.29.00.95 | 555W | 未说明 | not_compliant | 未说明 | Single | 555W | Standard | 40 ns | N-CHANNEL | 1.2kV | 80A | 65 ns | 1200V | 2.4V @ 15V, 40A | 175°C | 80A | 沟渠现场停车 | 370nC | 160A | 40ns/475ns | 2.7mJ (on), 1.1mJ (off) | 25V | 7.5V | 24.75mm | 15.87mm | 4.82mm | ROHS3 Compliant | |||||||||||||||||||||||||
| HGTG27N120BN | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 44 Weeks | 1 | 960V, 27A, 3 Ω, 15V | 240 ns | ACTIVE, NOT REC (Last Updated: 2 days ago) | 通孔 | 通孔 | TO-247-3 | 3 | 6.39g | SILICON | 1.2kV | -55°C~150°C TJ | Tube | e3 | yes | 不用于新设计 | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | LOW CONDUCTION LOSS, AVALANCHE RATED | 8541.29.00.95 | 1.2kV | 500W | 72A | Single | 500W | COLLECTOR | Standard | 24 ns | 电源控制 | N-CHANNEL | 1.2kV | 72A | 1200V | 42 ns | 2.7V @ 15V, 27A | 72A | 360 ns | NPT | 270nC | 216A | 24ns/195ns | 2.2mJ (on), 2.3mJ (off) | 20.82mm | 15.87mm | 4.82mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||
| SGL160N60UFDTU | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1 | 300V, 80A, 3.9 Ω, 15V | 90 ns | ACTIVE, NOT REC (Last Updated: 10 hours ago) | 通孔 | 通孔 | TO-264-3, TO-264AA | 3 | 6.756g | SILICON | 600V | -55°C~150°C TJ | Tube | 2014 | e3 | yes | 不用于新设计 | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | 8541.29.00.95 | 600V | 250W | 80A | Single | 250W | Standard | 40 ns | MOTOR CONTROL | N-CHANNEL | 600V | 160A | 95 ns | 150 ns | 2.6V @ 15V, 80A | 262 ns | 345nC | 300A | 40ns/90ns | 2.5mJ (on), 1.76mJ (off) | 26mm | 20mm | 5mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||
| HGTG30N60B3D | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1 | 480V, 30A, 3 Ω, 15V | 137 ns | ACTIVE, NOT REC (Last Updated: 2 days ago) | 通孔 | 通孔 | TO-247-3 | 3 | 6.39g | SILICON | 600V | -55°C~150°C TJ | Tube | 2011 | e3 | yes | 不用于新设计 | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | 低导通损耗 | 8541.29.00.95 | 600V | 208W | 60A | HGTG30N60 | Single | 208W | Standard | 36 ns | 电源控制 | 25ns | N-CHANNEL | 600V | 60A | 55 ns | 56 ns | 1.9V @ 15V, 30A | 365 ns | 170nC | 220A | 36ns/137ns | 550μJ (on), 680μJ (off) | 无 | 无SVHC | ROHS3 Compliant | 无铅 |