类别是'存储器连接器 - 配件'
存储器连接器 - 配件 (752)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 厂商 | 操作温度 | 系列 | JESD-609代码 | 无铅代码 | ECCN 代码 | 连接器类型 | 类型 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | MIL一致性 | 符合 DIN 标准 | IEC一致性 | 过滤功能 | 混合接触 | 选项 | 触头总数 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 引脚数量 | JESD-30代码 | 资历状况 | 配套信息 | 触点性别 | UL可燃性规范 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 最大电源电压 | 最小电源电压 | 终端类型 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | uPs/uCs/外围ICs类型 | 触点表面处理 终端 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 边界扫描 | 低功率模式 | 筛选水平 | I/O类型 | 内存IC类型 | 刷新周期 | 顺序突发长度 | 交错突发长度 | 访问模式 | 自我刷新 | 库存数量 | 组织的记忆 | 长度 | 宽度 | |||||||||||||||||||||||||||||||||||||
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 | AM2968DC | AMD | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 无 | Obsolete | ADVANCED MICRO DEVICES INC | DIP | DIP, DIP48,.6 | 5.88 | 70 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP48,.6 | RECTANGULAR | IN-LINE | 5.5 V | 5 V | Non-Compliant | 4.5 V | NO | 48 | AM2968DC | e0 | Tin/Lead (Sn/Pb) | DUAL | THROUGH-HOLE | 2.54 mm | unknown | 48 | R-CDIP-T48 | 不合格 | 5 V | COMMERCIAL | MEMORY CONTROLLER, DRAM | 280 mA | 5.08 mm | 18 | NO | NO | 4 | 1M X 16 | 60.96 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GS4288C36L-25I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 无 | 活跃 | GSI TECHNOLOGY | BGA | TBGA, | 5.1 | 8388608 words | 8000000 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | 1.8 V | 未说明 | 400 MHz | 36 Bit | 表面贴装 | Industrial grade | YES | 144 | GS4288C36L-25I | -40 to 95 °C | 3A991.B.2.B | LLDRAM | 自动刷新 | 8542.32.00.28 | BOTTOM | BALL | 未说明 | 1 | 1 mm | compliant | 144 | R-PBGA-B144 | 1.8000 V | 1.9 V | 1.7 V | 1 | SYNCHRONOUS | 36 Bit | 8MX36 | 1.2 mm | 36 | 22 Bit | 288 Mbit | 301989888 bit | Industrial | DDR DRAM | 多库页面突发 | 11 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GS4576C09GM-24 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 活跃 | GSI TECHNOLOGY | LBGA, | 5.09 | 67108864 words | 64000000 | 95 °C | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | 1.8 V | 未说明 | YES | 144 | GS4576C09GM-24 | 自动刷新 | BOTTOM | BALL | 未说明 | 1 | 1 mm | compliant | R-PBGA-B144 | 1.9 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 64MX9 | 1.25 mm | 9 | 603979776 bit | DDR DRAM | 多库页面突发 | 18.5 mm | 11 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43DR83200A-37CBLI-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 5.84 | 0.5 ns | 266 MHz | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | INTEGRATED SILICON SOLUTION INC | Obsolete | 有 | IS43DR83200A-37CBLI-TR | 1.8 V | Compliant | YES | 60 | TFBGA, BGA60,9X11,32 | 85 °C | -40 °C | AUTO/SELF REFRESH | BOTTOM | BALL | 1 | 0.8 mm | compliant | R-PBGA-B60 | 不合格 | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.9 V | 1.7 V | 32 MB | 1 | SYNCHRONOUS | 0.27 mA | 500 ps | 8 b | 32MX8 | 3-STATE | 1.2 mm | 8 | 0.005 A | 268435456 bit | 266 MHz | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 四库页面突发 | YES | 10.5 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS45S16800E-7CTNA2 | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 5.4 ns | 143 MHz | 3.3 V | 10 | SMALL OUTLINE, THIN PROFILE | RECTANGULAR | TSOP54,.46,32 | TSOP2 | PLASTIC/EPOXY | -40 °C | 105 °C | 8000000 | 8388608 words | 3 | TSOP2, TSOP54,.46,32 | TSOP2 | INTEGRATED SILICON SOLUTION INC | Obsolete | 有 | IS45S16800E-7CTNA2 | YES | 54 | 5.66 | e4 | 有 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | 鸥翼 | 260 | 1 | 0.8 mm | compliant | 54 | R-PDSO-G54 | 不合格 | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | 0.16 mA | 8MX16 | 3-STATE | 1.2 mm | 16 | 0.001 A | 134217728 bit | COMMON | 同步剧 | 4096 | 1,2,4,8,FP | 1,2,4,8 | 四库页面突发 | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43DR81280A-25EBL | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | BGA | TFBGA, BGA60,9X11,32 | 5.31 | 0.4 ns | 400 MHz | 134217728 words | 128000000 | 70 °C | 1.8 V | GRID ARRAY, THIN PROFILE, FINE PITCH | RECTANGULAR | BGA60,9X11,32 | TFBGA | PLASTIC/EPOXY | YES | 60 | IS43DR81280A-25EBL | EAR99 | AUTO/SELF REFRESH | 8542.32.00.32 | BOTTOM | BALL | 1 | 0.8 mm | compliant | 60 | R-PBGA-B60 | 不合格 | 1.9 V | 1.8 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 0.31 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 多库页面突发 | YES | 13.65 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43DR32801A-37CBLI-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | INTEGRATED SILICON SOLUTION INC | 5.84 | 0.5 ns | 267 MHz | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | FBGA | BGA126,12X16,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | 1.8 V | 有 | IS43DR32801A-37CBLI-TR | YES | 126 | Obsolete | BOTTOM | BALL | 0.8 mm | compliant | R-PBGA-B126 | 不合格 | 1.8 V | INDUSTRIAL | 0.45 mA | 8MX32 | 3-STATE | 32 | 0.008 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43DR86400B-37CBLI-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA60,9X11,32 | 5.84 | 0.5 ns | 266 MHz | 1 | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 未说明 | YES | 60 | IS43DR86400B-37CBLI-TR | e3 | 有 | Matte Tin (Sn) | AUTO/SELF REFRESH | BOTTOM | BALL | 225 | 1 | 0.8 mm | compliant | R-PBGA-B60 | 不合格 | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.22 mA | 64MX8 | 3-STATE | 1.2 mm | 8 | 0.008 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 四库页面突发 | YES | 10.5 mm | 10 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43DR81280A-25EBLI-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 400 MHz | 0.4 ns | 5.49 | TFBGA, BGA60,9X11,32 | INTEGRATED SILICON SOLUTION INC | Obsolete | 有 | IS43DR81280A-25EBLI-TR | YES | 60 | 134217728 words | AUTO/SELF REFRESH | BOTTOM | BALL | 1 | 0.8 mm | compliant | R-PBGA-B60 | 不合格 | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.31 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 多库页面突发 | YES | 13.65 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS45S16800E-7CTNA1-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | 5.84 | 5.4 ns | 143 MHz | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 3.3 V | YES | 54 | IS45S16800E-7CTNA1-TR | DUAL | 鸥翼 | 0.8 mm | unknown | R-PDSO-G54 | 不合格 | 3.3 V | INDUSTRIAL | 0.16 mA | 8MX16 | 3-STATE | 16 | 0.001 A | 134217728 bit | COMMON | 同步剧 | 4096 | 1,2,4,8,FP | 1,2,4,8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43DR16640A-25DBL-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA84,9X15,32 | 5.42 | 0.4 ns | 400 MHz | 67108864 words | 64000000 | 70 °C | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | YES | 84 | IS43DR16640A-25DBL-TR | AUTO/SELF REFRESH | BOTTOM | BALL | 1 | 0.8 mm | compliant | R-PBGA-B84 | 不合格 | 1.9 V | 1.8 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 0.36 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.015 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 多库页面突发 | YES | 13.65 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43TR81280AL-15GBL | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks, 6 Days | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | TFBGA, | 5.61 | 134217728 words | 128000000 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.35 V | 未说明 | YES | 78 | IS43TR81280AL-15GBL | AUTO/SELF REFRESH | BOTTOM | BALL | 未说明 | 1 | 0.8 mm | compliant | R-PBGA-B78 | 1.45 V | 1.283 V | 1 | SYNCHRONOUS | 128MX8 | 1.2 mm | 8 | 1073741824 bit | DDR DRAM | 多库页面突发 | YES | 10.5 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS46LD32640B-18BLA2-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 有 | 活跃 | INTEGRATED SILICON SOLUTION INC | TFBGA, | 5.64 | 67108864 words | 64000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.2 V | 未说明 | Bulk | 最后一次购买 | Volatile | 表面贴装 | 134-TFBGA | YES | 134-TFBGA (10x11.5) | 134 | ISSI, Integrated Silicon Solution Inc | IS46LD32640B-18BLA2-TR | -40°C ~ 105°C (TC) | - | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 1.14V ~ 1.3V, 1.7V ~ 1.95V | BOTTOM | BALL | 未说明 | 1 | 0.65 mm | compliant | R-PBGA-B134 | 1.3 V | INDUSTRIAL | 1.14 V | 2Gbit | 1 | SYNCHRONOUS | 533 MHz | 5.5 ns | DRAM | HSUL_12 | 64MX32 | 1.1 mm | 32 | 15ns | 2147483648 bit | DDR DRAM | 多库页面突发 | YES | 64M x 32 | 11.5 mm | 10 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42S16800D-7BLI | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | BGA | VFBGA, BGA54,9X9,32 | 5.58 | 5.4 ns | 143 MHz | 3 | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | BGA54,9X9,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 3.3 V | 40 | YES | 54 | IS42S16800D-7BLI | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 54 | R-PBGA-B54 | 不合格 | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | 0.13 mA | 8MX16 | 3-STATE | 1 mm | 16 | 0.001 A | 134217728 bit | COMMON | 同步剧 | 4096 | 1,2,4,8,FP | 1,2,4,8 | 四库页面突发 | YES | 13 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43DR32800A-37CBL | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | BGA | LFBGA, BGA126,12X16,32 | 5.29 | 0.5 ns | 267 MHz | 3 | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | LFBGA | BGA126,12X16,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 1.8 V | 10 | YES | 126 | IS43DR32800A-37CBL | e1 | 有 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | CAS BEFORE RAS/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 126 | R-PBGA-B126 | 不合格 | 1.9 V | 1.8 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 0.45 mA | 8MX32 | 3-STATE | 1.4 mm | 32 | 0.008 A | 268435456 bit | COMMON | DDR DRAM | 4096 | 4,8 | 4,8 | 四库页面突发 | YES | 14 mm | 11 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42S86400F-5TL | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 活跃 | INTEGRATED SILICON SOLUTION INC | TSOP2, TSOP54,.46,32 | 5.68 | 5 ns | 200 MHz | 67108864 words | 64000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 3.3 V | YES | 54 | IS42S86400F-5TL | EAR99 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 8542.32.00.28 | DUAL | 鸥翼 | 1 | 0.8 mm | compliant | R-PDSO-G54 | 不合格 | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.2 mA | 64MX8 | 3-STATE | 1.2 mm | 8 | 0.004 A | 536870912 bit | COMMON | 同步剧 | 8192 | 1,2,4,8,FP | 1,2,4,8 | 四库页面突发 | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MQ198B-10S-CV1(01) | Hirose | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | HIROSE ELECTRIC CO LTD | 5.84 | MQ198B-10S-CV1(01) | MQ198B-10S-CV1(01) | EAR99 | 电信和数据通信连接器 | 8536.69.40.30 | unknown | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NT5TU64M16HG-BE | Nanya | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 活跃 | NANYA TECHNOLOGY CORP | TFBGA, BGA84,9X15,32 | 5.65 | 0.35 ns | 533 MHz | 67108864 words | 64000000 | 85 °C | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 未说明 | YES | 84 | NT5TU64M16HG-BE | AUTO/SELF REFRESH | BOTTOM | BALL | 未说明 | 1 | 0.8 mm | compliant | R-PBGA-B84 | 不合格 | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 64MX16 | 3-STATE | 1.2 mm | 16 | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 多库页面突发 | YES | 12.5 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| WEDPN16M64V-133B2I | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 无 | Transferred | WHITE ELECTRONIC DESIGNS CORP | BGA, | 5.66 | 5.5 ns | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | SQUARE | 网格排列 | 3.3 V | 未说明 | YES | 219 | WEDPN16M64V-133B2I | AUTO/SELF REFRESH | BOTTOM | BALL | 未说明 | 1 | 1.27 mm | unknown | S-PBGA-B219 | 不合格 | 3.6 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | 16MX64 | 64 | 1073741824 bit | 同步剧 | 多库页面突发 | YES | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W634GG6MB15I | Winbond Electronics Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 不推荐 | WINBOND ELECTRONICS CORP | VFBGA, | 5.63 | 268435456 words | 256000000 | 95 °C | -40 °C | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 1.5 V | YES | 96 | W634GG6MB15I | AUTO/SELF REFRESH | BOTTOM | BALL | 1 | 0.8 mm | compliant | R-PBGA-B96 | 1.575 V | INDUSTRIAL | 1.425 V | 1 | SYNCHRONOUS | 256MX16 | 1 mm | 16 | 4294967296 bit | DDR DRAM | 多库页面突发 | YES | 13 mm | 9 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 73704-543CAS | AMPHENOL FCI ASIA PTE LTD | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | RIGHT ANGLE | 73704 | 未说明 | 未说明 | 5.76 | FCI | Obsolete | 73704-543CAS | BOARD | 2 | EAR99 | PCMCIA连接器 | 8536.69.40.40 | NO | NO | NO | NO | NO | GENERAL PURPOSE | 68 | 1.27 mm | unknown | MULTIPLE MATING PARTS AVAILABLE | MALE | 94V-0 | SURFACE MOUNT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 94306-3158 | Molex | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | MOLEX LLC | 5.82 | GOLD (5) | PHOSPHOR BRONZE | 94306 | 94306-3158 | e3 | 有 | PCB 连接器 | NO | NO | NO | GENERAL PURPOSE | unknown | TIN (150) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43TR82560A-15HBL | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks, 6 Days | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | BGA | TFBGA, BGA78,9X13,32 | 5.6 | 13.125 ns | 667 MHz | 268435456 words | 256000000 | 95 °C | PLASTIC/EPOXY | TFBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.5 V | Compliant | 表面贴装 | YES | 78 | 78 | IS43TR82560A-15HBL | EAR99 | 95 °C | 0 °C | AUTO SELF REFRESH MODE, ALSO OPERATES AT 1.35 V NOMINAL SUPPLY | 8542.32.00.36 | BOTTOM | BALL | 1 | 0.8 mm | compliant | 78 | R-PBGA-B78 | 不合格 | 1.5 V | 1.575 V | 1.5 V | OTHER | 1.425 V | 1.575 V | 1.425 V | 1 | 140 mA | SYNCHRONOUS | 0.245 mA | 20 ns | 256MX8 | 3-STATE | 1.2 mm | 8 | 18 b | 2 Gb | 0.014 A | 2147483648 bit | 1.333 GHz | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 多库页面突发 | YES | 10.5 mm | 9 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43DR16320B-37CBLI-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA84,9X15,32 | 5.83 | 0.5 ns | 266 MHz | 1 | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 未说明 | YES | 84 | IS43DR16320B-37CBLI-TR | e3 | 有 | Matte Tin (Sn) | AUTO/SELF REFRESH | BOTTOM | BALL | 225 | 1 | 0.8 mm | compliant | R-PBGA-B84 | 不合格 | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.335 mA | 32MX16 | 3-STATE | 1.2 mm | 16 | 0.008 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 四库页面突发 | YES | 13 mm | 10.5 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS45S16320B-7CTNA1 | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | TSOP2 | TSOP2, TSOP54,.46,32 | 5.38 | 6 ns | 143 MHz | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 3.3 V | 未说明 | Automotive grade | YES | 54 | IS45S16320B-7CTNA1 | e4 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.28 | DUAL | 鸥翼 | 未说明 | 1 | 0.8 mm | unknown | 54 | R-PDSO-G54 | 不合格 | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | 0.3 mA | 32MX16 | 3-STATE | 1.2 mm | 16 | 0.004 A | 536870912 bit | AEC-Q100 | COMMON | 同步剧 | 8192 | 1,2,4,8,FP | 1,2,4,8 | 四库页面突发 | YES | 22.22 mm | 10.16 mm |