N/A

-

200 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

SRAM

TQFP-100

有

Tray

GS8161E32DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

225 mA, 230 mA

6.5 ns

512 k x 32

SRAM

N/A

-

10 Weeks

FBGA

QDR

1.8000 V

Synchronous

4 MWords

8 Bit

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

85 °C

有

GS8342DT07BGD-333

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Commercial grade

SRAM

BGA-165

YES

165

333 MHz

0 to 85 °C

Tray

GS8342DT07BGD

e1

有

3A991.B.2.B

SigmaQuad-II+ B4

Tin/Silver/Copper (Sn/Ag/Cu)

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

不合格

1.9 V

1.5/1.8,1.8 V

OTHER

1.7 V

36 Mbit

2

SYNCHRONOUS

605 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

20 Bit

36 Mbit

33554432 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

SRAM

15 mm

13 mm

N/A

-

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

SRAM

TQFP-100

153.8@Flow-Through/200@Pipelined MHz

0 to 70 °C

Tray

GS880Z18CGT

NBT

Memory & Data Storage

100

9 Mbit

1

130 mA, 155 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

9 Mbit

Commercial

SRAM

N/A

-

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

SRAM

BGA-165

200@Flow-Through/333@Pipelined MHz

0 to 85 °C

Tray

GS816236DGD

Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

4

240 mA, 310 mA

5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

18 Mbit

Commercial

SRAM

N/A

-

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

BGA-119

150 MHz

GS88218CB

9 Mbit

140 mA, 150 mA

7.5 ns

512 k x 18

N/A

-

10 Weeks

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

200 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342QT07BGD-200I

200 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Industrial grade

SRAM

BGA-165

YES

165

200 MHz

-40 to 100 °C

Tray

GS8342QT07BGD

e1

有

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

不合格

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

36 Mbit

2

SYNCHRONOUS

565 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

36 Mbit

33554432 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

SRAM

15 mm

13 mm

N/A

-

FBGA

QDR

1.8000 V

Synchronous

4 MWords

8 Bit

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

SRAM

BGA-165

300 MHz

0 to 85 °C

Tray

GS8342DT07BD

SigmaQuad-II+ B4

Memory & Data Storage

165

36 Mbit

2

530 mA

Pipelined

4 M x 8

20 Bit

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

BGA, BGA119,7X17,50

网格排列

3

2000000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

4.5 ns

70 °C

有

GS8322Z18AGB-333

333 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Commercial grade

SRAM

BGA-119

YES

119

222.2@Flow-Through/333@Pipelined MHz

0 to 85 °C

Tray

GS8322Z18AGB

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

119

R-PBGA-B119

不合格

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

36 Mbit

2

SYNCHRONOUS

235 mA, 320 mA

4.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

SRAM

22 mm

14 mm

N/A

-

500 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

SRAM

BGA-165

有

Tray

GS8672D38BGE

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2.25 A

2 M x 36

72

SRAM

N/A

-

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

SRAM

BGA-165

133.3@Flow-Through/150@Pipelined MHz

0 to 70 °C

Tray

GS8161E36DGD

DCD Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

4

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

18 Mbit

Commercial

SRAM

N/A

-

10 Weeks

1.8000 V

1.7 V

Synchronous

9 Bit

1.9 V

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8342D09BD-250I

250 MHz

4194304 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.35

BGA

Industrial grade

SRAM

BGA-165

YES

165

250 MHz

-40 to 100 °C

Tray

GS8342D09BD

3A991.B.2.B

SigmaQuad-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

165

R-PBGA-B165

不合格

1.9 V

1.5/1.8,1.8 V

INDUSTRIAL

1.7 V

36 Mbit

SYNCHRONOUS

470 mA

0.45

4 M x 9

3-STATE

1.4 mm

9

0.195 A

36

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

SRAM

15 mm

13 mm

N/A

-

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

BGA-165

200 MHz

72 Mbit

870 mA

4 M x 18

72

N/A

-

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

200 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

SRAM

BGA-165

200 MHz

0 to 85 °C

Tray

GS8342QT37BGD

SigmaQuad-II+ B2

Memory & Data Storage

165

36 Mbit

2

640 mA

Pipelined

1 M x 36

19 Bit

36 Mbit

Commercial

SRAM

N/A

-

FBGA

DDR

1.8000 V

Synchronous

4 MWords

8 Bit

表面贴装

400 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

BGA-165

400 MHz

0 to 85 °C

165

36 Mbit

1

600 mA

Pipelined

4 M x 8

36 Mbit

Commercial

N/A

-

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

-40 to 100 °C

100

4

Flow-Through/Pipelined

19 Bit

18 Mbit

Industrial

N/A

-

200 MHz

+ 100 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

SRAM

TQFP-100

有

Tray

GS8160E18DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

215 mA

6.5 ns

1 M x 18

SRAM

N/A

-

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

200 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

SRAM

BGA-165

200 MHz

-40 to 100 °C

Tray

GS8342Q19BGD

SigmaQuad-II+ B2

Memory & Data Storage

165

36 Mbit

2

565 mA

Pipelined

2 M x 18

20 Bit

36 Mbit

Industrial

SRAM

N/A

-

IN-LINE

128

PLASTIC/EPOXY

DIP8,.3

-40 °C

未说明

85 °C

有

93LC56C-I/PG

2 MHz

128 words

5 V

DIP

RECTANGULAR

Microchip Technology Inc

活跃

MICROCHIP TECHNOLOGY INC

5.25

DIP

NO

8

DIP, DIP8,.3

e3

有

EAR99

Matte Tin (Sn)

8542.32.00.51

EEPROMs

CMOS

DUAL

THROUGH-HOLE

未说明

1

2.54 mm

compliant

8

R-PDIP-T8

不合格

5.5 V

3/5 V

INDUSTRIAL

2.5 V

SYNCHRONOUS

0.002 mA

128X16

5.334 mm

16

0.000001 A

2048 bit

SERIAL

EEPROM

MICROWIRE

1000000 Write/Erase Cycles

6 ms

200

SOFTWARE

8

9.271 mm

7.62 mm

N/A

-

8 Weeks

333 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

LBGA,

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS8182D18BGD-333

1048576 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.18

BGA

SRAM

BGA-165

YES

165

有

Tray

GS8182D18BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

不合格

1.9 V

COMMERCIAL

1.7 V

18 Mbit

SYNCHRONOUS

515 mA

1 M x 18

1.4 mm

18

18874368 bit

PARALLEL

DDR SRAM

SRAM

15 mm

13 mm

N/A

-

12 Weeks

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8672Q38BE-450I

450 MHz

2097152 words

1.8 V

LBGA

RECTANGULAR

Obsolete

GSI TECHNOLOGY

5.92

BGA

SRAM

BGA-165

YES

165

有

Tray

GS8672Q38BE

3A991.B.2.B

SigmaQuad-II+ B2

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

165

R-PBGA-B165

不合格

1.9 V

1.5,1.8 V

INDUSTRIAL

1.7 V

72 Mbit

SYNCHRONOUS

2.07 A

2 M x 36

3-STATE

1.4 mm

36

72

PARALLEL

SEPARATE

QDR SRAM

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

250 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

BGA, BGA119,7X17,50

网格排列

2000000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

5.5 ns

70 °C

无

GS832218AB-250

250 MHz

2.5 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.11

BGA

Commercial grade

BGA-119

YES

119

181.8@Flow-Through/250@Pipelined MHz

0 to 85 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

119

R-PBGA-B119

不合格

2.7 V

2.5/3.3 V

COMMERCIAL

2.3 V

36 Mbit

2

SYNCHRONOUS

215 mA, 255 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

22 mm

14 mm

N/A

-

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Commercial grade

SRAM

BGA-165

333 MHz

0 to 85 °C

Tray

GS8342Q18BGD

SigmaQuad-II

Memory & Data Storage

165

36 Mbit

2

885 mA

Pipelined

2 M x 18

20 Bit

36 Mb

Commercial

SRAM

N/A

-

8 Weeks

250 MHz

+ 70 C

3.6 V

0 C

42

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

BGA,

网格排列

256000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

无

GS88236CB-250

262144 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

SRAM

BGA-119

YES

119

有

Tray

GS88236CB

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

119

R-PBGA-B119

不合格

2.7 V

COMMERCIAL

2.3 V

9 Mbit

SYNCHRONOUS

155 mA, 195 mA

5.5 ns

256 k x 36

1.77 mm

36

9437184 bit

PARALLEL

缓存SRAM

SRAM

22 mm

14 mm

N/A

-

10 Weeks

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS8161E18DGD-200I

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.29

BGA

Industrial grade

YES

165

153.8@Flow-Through/200@Pipelined MHz

-40 to 85 °C

3A991.B.2.B

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

165

R-PBGA-B165

不合格

2.7 V

INDUSTRIAL

2.3 V

2

SYNCHRONOUS

Flow-Through/Pipelined

1MX18

1.4 mm

18

20 Bit

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

15 mm

13 mm

N/A

-

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

BGA-165

167 MHz

GS8182S36BD

18 Mbit

380 mA

512 k x 36