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BUK7880-55,135
TO-261-4, TO-261AA
Trans MOSFET N-CH 55V 3.5A Automotive 4-Pin(3+Tab) SC-73 T/R
规格参数
- 类型参数全选
安装类型
Surface Mount
包装/外壳
TO-261-4, TO-261AA
表面安装
YES
晶体管元件材料
SILICON
3.5A Ta
10V
1
1.8W Ta
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
系列
Automotive, AEC-Q101, TrenchMOS™
已出版
1998
JESD-609代码
e3
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
终止次数
4
ECCN 代码
EAR99
端子表面处理
Tin (Sn)
附加功能
LOGIC LEVEL COMPATIBLE
HTS代码
8541.29.00.75
端子位置
DUAL
终端形式
GULL WING
峰值回流焊温度(摄氏度)
260
时间@峰值回流温度-最大值(s)
40
引脚数量
4
JESD-30代码
R-PDSO-G4
资历状况
Not Qualified
配置
SINGLE WITH BUILT-IN DIODE
操作模式
ENHANCEMENT MODE
箱体转运
DRAIN
场效应管类型
N-Channel
晶体管应用
SWITCHING
Rds On(Max)@Id,Vgs
80m Ω @ 5A, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 1mA
输入电容(Ciss)(Max)@Vds
500pF @ 25V
漏源电压 (Vdss)
55V
Vgs(最大值)
±16V
最大漏极电流 (Abs) (ID)
7.5A
漏极-源极导通最大电阻
0.08Ohm
脉冲漏极电流-最大值(IDM)
40A
DS 击穿电压-最小值
55V
雪崩能量等级(Eas)
30 mJ
反馈上限-最大值 (Crss)
85 pF
关断时间-最大值(toff)
45ns
接通时间-最大值(ton)
39ns
RoHS状态
ROHS3 Compliant
相关型号
- 图片产品型号品牌Package / CaseDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CPower Dissipation-MaxMounting TypeMoisture Sensitivity Level (MSL)Part StatusTechnology
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BUK7880-55,135
TO-261-4, TO-261AA
55V
3.5A (Ta)
1.8W (Ta)
Surface Mount
1 (Unlimited)
Obsolete
MOSFET (Metal Oxide)
-
TO-261-4, TO-261AA
60V
1.9A (Ta)
1.8W (Ta)
Surface Mount
1 (Unlimited)
Obsolete
MOSFET (Metal Oxide)
-
TO-261-4, TO-261AA
55V
5.5A (Tc)
8.3W (Tc)
Surface Mount
1 (Unlimited)
Obsolete
MOSFET (Metal Oxide)
-
TO-261-4, TO-261AA
60V
2.6A (Ta)
1.8W (Ta)
Surface Mount
1 (Unlimited)
Obsolete
MOSFET (Metal Oxide)
-
TO-261-4, TO-261AA
55V
3A (Ta)
1.1W (Ta)
Surface Mount
1 (Unlimited)
Obsolete
MOSFET (Metal Oxide)
BUK7880-55,135 PDF数据手册
- 数据表 :
- 环境信息 :
- PCN 报废/ EOL :