![FLM5964-8F](https://res.utmel.com/Images/category/Discrete Semiconductor Products.png)
FLM5964-8F
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Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
规格参数
- 类型参数全选
表面安装
YES
终端数量
2
晶体管元件材料
GALLIUM ARSENIDE
Obsolete
FUJITSU SEMICONDUCTOR AMERICA INC
FLANGE MOUNT, R-CDFM-F2
CASE IB
2.6 A
1
CERAMIC, METAL-SEALED COFIRED
RECTANGULAR
FLANGE MOUNT
ECCN 代码
EAR99
附加功能
HIGH RELIABILITY
端子位置
DUAL
终端形式
FLAT
Reach合规守则
unknown
引脚数量
3
JESD-30代码
R-CDFM-F2
资历状况
Not Qualified
配置
SINGLE
操作模式
DEPLETION MODE
箱体转运
SOURCE
极性/通道类型
N-CHANNEL
DS 击穿电压-最小值
15 V
场效应管技术
JUNCTION
最高频段
C BAND
FLM5964-8F PDF数据手册
- 数据表 :