![1MBI600S-120](https://res.utmel.com/Images/category/Discrete Semiconductor Products.png)
1MBI600S-120
-
Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, MODULE-4
规格参数
- 类型参数全选
表面安装
NO
终端数量
4
晶体管元件材料
SILICON
FLANGE MOUNT, R-XUFM-X4
FLANGE MOUNT
UNSPECIFIED
105 ns
800 ns
1MBI600S-120
RECTANGULAR
Fuji Electric Co Ltd
1
Obsolete
FUJI ELECTRIC CO LTD
5.8
MODULE
端子位置
UPPER
终端形式
UNSPECIFIED
Reach合规守则
unknown
引脚数量
4
JESD-30代码
R-XUFM-X4
资历状况
Not Qualified
配置
SINGLE WITH BUILT-IN DIODE
箱体转运
ISOLATED
晶体管应用
POWER CONTROL
极性/通道类型
N-CHANNEL
集电极电流-最大值(IC)
900 A
集电极-发射器电压-最大值
1200 V