制造商是'STMicroelectronics'
STMicroelectronics 晶体管 - FET，MOSFET - 阵列
(58)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 晶体管元件材料 | 制造商包装标识符 | 操作温度 | 包装 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 电阻 | 端子表面处理 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 界面 | 内存大小 | 元素配置 | 内存大小 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 数据总线宽度 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)（最大值） | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 定时器/计数器的数量 | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间（典型值） | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 核心架构 | 最高频率 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 输入电容 | DS 击穿电压-最小值 | 可编程I/O数 | 雪崩能量等级（Eas） | 场效应管技术 | 最大耗散功率(Abs) | 最大结点温度（Tj） | 场效应管特性 | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||
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 | STS4DNF60L | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 45 ns | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 4.535924g | SILICON | 2 | -55°C~150°C TJ | Cut Tape (CT) | STripFET™ | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 55mOhm | Matte Tin (Sn) | 低阈值 | 60V | 2W | 鸥翼 | 260 | 4A | 30 | STS4D | 8 | 不合格 | 增强型MOSFET | 2W | 15 ns | 2 N-Channel (Dual) | SWITCHING | 55m Ω @ 2A, 10V | 2.5V @ 250μA | 1030pF @ 25V | 15nC @ 4.5V | 28ns | 10 ns | 4A | 1.7V | 15V | 4A | 60V | 16A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.25mm | 5mm | 4.05mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||
| STS2DNF30L | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 ns | NRND (Last Updated: 7 months ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 4.535924g | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | STripFET™ | e4 | 不用于新设计 | 3 (168 Hours) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 30V | 2W | 鸥翼 | 260 | 3A | 30 | STS2D | 8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 19 ns | 2 N-Channel (Dual) | SWITCHING | 110m Ω @ 1A, 10V | 2.5V @ 250μA | 121pF @ 25V | 4.5nC @ 10V | 20ns | 8 ns | 3A | 1.7V | 18V | 3A | 0.15Ohm | 30V | 9A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 6.35mm | 50.8mm | 6.35mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
| STS5DNF60L | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 45 ns | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | Automotive, AEC-Q101, STripFET™ II | e3 | 活跃 | 3 (168 Hours) | 8 | EAR99 | Tin (Sn) | 低阈值 | 2W | 鸥翼 | 260 | STS5D | 8 | 增强型MOSFET | 2W | 15 ns | 2 N-Channel (Dual) | SWITCHING | 45m Ω @ 2A, 10V | 2.5V @ 250μA | 1030pF @ 25V | 15nC @ 4.5V | 28ns | 60V | 10 ns | 5A | 15V | 5A | 0.055Ohm | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
| STS8C5H30L | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 2 | 125 ns | NRND (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 8A 5.4A | 150°C TJ | Tape & Reel (TR) | STripFET™ III | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 22MOhm | Matte Tin (Sn) | 2W | DUAL | 鸥翼 | 260 | 8A | 30 | STS8C5 | 8 | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 22m Ω @ 4A, 10V | 1V @ 250μA | 857pF @ 25V | 10nC @ 5V | 35ns | N-CHANNEL AND P-CHANNEL | 35 ns | 8A | 1.6V | 16V | 8A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.25mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
 | STL40DN3LLH5 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 2 | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 表面贴装 | 8-PowerVDFN | 5 | SILICON | 13 ns | -55°C~175°C TJ | Tape & Reel (TR) | STripFET™ V | 活跃 | 1 (Unlimited) | 6 | EAR99 | 18MOhm | 60W | FLAT | STL40 | 8 | R-PDSO-F6 | Dual | 增强型MOSFET | 60W | DRAIN | 4 ns | 2 N-Channel (Dual) | SWITCHING | 18m Ω @ 5.5A, 10V | 1.5V @ 250μA | 475pF @ 25V | 4.5nC @ 4.5V | 22ns | 30V | 2.8 ns | 40A | 1.5V | 22V | 11A | 30V | 44A | METAL-OXIDE SEMICONDUCTOR | Standard | 850μm | 4.75mm | 5.75mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
| STS8DNF3LL | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 21 ns | NRND (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 4.535924g | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | STripFET™ II | e4 | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | 20mOhm | Nickel/Palladium/Gold (Ni/Pd/Au) | 30V | 1.6W | 鸥翼 | 260 | 8A | 30 | STS8DN | 8 | 增强型MOSFET | 2W | 18 ns | 2 N-Channel (Dual) | SWITCHING | 20m Ω @ 4A, 10V | 1V @ 250μA | 800pF @ 25V | 17nC @ 5V | 32ns | 11 ns | 8A | 16V | 8A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 6.35mm | 12.7mm | 6.35mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
 | STS1DNC45 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | SuperMESH™ | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 450V | 1.6W | 鸥翼 | 260 | 400mA | 30 | STS1D | 8 | 增强型MOSFET | 2W | 6.7 ns | 2 N-Channel (Dual) | SWITCHING | 4.5 Ω @ 500mA, 10V | 3.7V @ 250μA | 160pF @ 25V | 10nC @ 10V | 4ns | 4 ns | 400mA | 30V | 0.4A | 450V | 1.6A | 30 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
| STS8DN3LLH5 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 21.1 ns | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | STripFET™ V | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 19MOhm | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.7W | 鸥翼 | 260 | 30 | STS8DN | 8 | Dual | 增强型MOSFET | 2.7W | 4 ns | 2 N-Channel (Dual) | SWITCHING | 19m Ω @ 5A, 10V | 1V @ 250μA | 724pF @ 25V | 5.4nC @ 4.5V | 4.2ns | 30V | 3.5 ns | 10A | 22V | 30V | 40A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
 | STL50DN6F7 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 2 | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 57A Tc | -55°C~175°C TJ | Tape & Reel (TR) | STripFET™ | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | 62.5W | FLAT | 260 | not_compliant | 未说明 | STL50 | R-PDSO-F6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 2 N-Channel (Dual) | SWITCHING | 11m Ω @ 7.5A, 10V | 4V @ 250μA | 1035pF @ 30V | 17nC @ 10V | 60V | 57A | 0.011Ohm | 60V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
| STL8DN10LF3 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 2 | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 50.6 ns | -55°C~175°C TJ | Cut Tape (CT) | Automotive, AEC-Q101, STripFET™ III | 活跃 | 1 (Unlimited) | 6 | EAR99 | 雪崩 额定 | 70W | FLAT | STL8 | R-PDSO-F6 | Dual | 增强型MOSFET | 70W | DRAIN | 8.7 ns | 2 N-Channel (Dual) | SWITCHING | 35m Ω @ 4A, 10V | 3V @ 250μA | 970pF @ 25V | 20.5nC @ 10V | 9.6ns | 100V | 5.2 ns | 20A | 20V | 0.05Ohm | 100V | 31.2A | 190 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
 | STS4DPF20L | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 125 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | STripFET™ | e4 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 80mOhm | Nickel/Palladium/Gold (Ni/Pd/Au) | 低阈值 | -20V | 2W | 鸥翼 | 260 | -4A | 30 | STS4D | 8 | 增强型MOSFET | 2W | 25 ns | 1.6W | 2 P-Channel (Dual) | SWITCHING | 80m Ω @ 2A, 10V | 2.5V @ 250μA | 1350pF @ 25V | 16nC @ 5V | 35ns | 35 ns | 4A | 1.6V | 16V | 4A | 20V | 16A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.25mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
 | STL65DN3LLH5 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 2 | 有 | 132kB | OBSOLETE (Last Updated: 7 months ago) | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | FLASH | -55°C~150°C TJ | Tape & Reel (TR) | STripFET™ V | e3 | Obsolete | 1 (Unlimited) | 6 | EAR99 | 6.5MOhm | Matte Tin (Sn) | 60W | 260 | 30 | STL65 | 8 | R-PDSO-N6 | CAN, I2C, I2S, SPI, UART, USART, USB | Dual | 768kB | 增强型MOSFET | 60W | DRAIN | 32b | 2 N-Channel (Dual) | SWITCHING | 6.5m Ω @ 9.5A, 10V | 1.5V @ 250μA | 1500pF @ 25V | 12nC @ 4.5V | 14 | 65A | 22V | ARM | 120MHz | 19A | 30V | 76A | 114 | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
| STS5DNF20V | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 27 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | STripFET™ II | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 40mOhm | Nickel/Palladium/Gold (Ni/Pd/Au) | 20V | 2W | 鸥翼 | 260 | 5A | 30 | STS5D | 8 | 增强型MOSFET | 2W | 7 ns | 2 N-Channel (Dual) | SWITCHING | 40m Ω @ 2.5A, 4.5V | 600mV @ 250μA | 460pF @ 25V | 11.5nC @ 4.5V | 33ns | 10 ns | 5A | 2.7V | 12V | 5A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.65mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
| STL15DN4F5 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 2 | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | 8-PowerVDFN | 5 | SILICON | 32 ns | -55°C~175°C TJ | Tape & Reel (TR) | Automotive, AEC-Q101, STripFET™ V | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | 9MOhm | Matte Tin (Sn) | ULTRA LOW-ON RESISTANCE | 60W | FLAT | 260 | STL15 | 8 | R-PDSO-F6 | Dual | 增强型MOSFET | 60W | DRAIN | 18 ns | 2 N-Channel (Dual) | SWITCHING | 9m Ω @ 7.5A, 10V | 4V @ 250μA | 1550pF @ 25V | 25nC @ 10V | 45ns | 40V | 5 ns | 60A | 2V | 20V | 40V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 850μm | 4.75mm | 5.75mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
| STS7C4F30L | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 2 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 7A 4A | 150°C TJ | Tape & Reel (TR) | STripFET™ | e4 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 镍钯金 | 2W | DUAL | 鸥翼 | 260 | 7A | 30 | STS7C4 | 8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | N and P-Channel | SWITCHING | 22m Ω @ 3.5A, 10V | 2.5V @ 250μA | 1050pF @ 25V | 23nC @ 5V | 35ns | 30V | N-CHANNEL AND P-CHANNEL | 4A | 7A | 0.026Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||
| STL36DN6F7 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 38 Weeks | 2 | 12.1 ns | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 8-PowerVDFN | YES | SILICON | PowerFLATTM_8256945_DI_typeC | 33A Tc | -55°C~175°C TJ | Tape & Reel (TR) | STripFET™ | e3 | 活跃 | 1 (Unlimited) | 6 | Matte Tin (Sn) | 260 | not_compliant | 未说明 | STL36 | R-PDSO-F6 | 2 | 增强型MOSFET | 58W | DRAIN | 7.85 ns | 2 N-Channel (Dual) | SWITCHING | 27m Ω @ 4.5A, 10V | 4V @ 250μA | 420pF @ 30V | 8nC @ 10V | 33A | 20V | 36A | 60V | 144A | METAL-OXIDE SEMICONDUCTOR | 175°C | Standard | 1mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
| STL8DN6LF6AG | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | 32A Tc | -55°C~175°C TJ | Tape & Reel (TR) | Automotive, AEC-Q101, STripFET™ | 活跃 | 1 (Unlimited) | EAR99 | 55W | 未说明 | 未说明 | STL8 | 2 N-Channel (Dual) | 27m Ω @ 9.6A, 10V | 2.5V @ 250μA | 60V | 32A | 1.34nF | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | STS8DN6LF6AG | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 2 | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 8A Ta | -55°C~175°C TJ | Tape & Reel (TR) | Automotive, AEC-Q101, STripFET™ F6 | 活跃 | 1 (Unlimited) | 8 | 鸥翼 | 未说明 | 未说明 | STS8DN | R-PDSO-G8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 3.2W | 2 N-Channel (Dual) | SWITCHING | 24m Ω @ 4A, 10V | 2.5V @ 250μA | 1340pF @ 25V | 27nC @ 10V | 60V | 8A | 0.026Ohm | 32A | 60V | 72 mJ | METAL-OXIDE SEMICONDUCTOR | 3.2W | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
| STL66DN3LLH5 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 26 ns | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | 2 | -55°C~175°C TJ | Cut Tape (CT) | Automotive, AEC-Q101, STripFET™ V | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) - annealed | 72W | STL66 | 72W | 8.8 ns | 2 N-Channel (Dual) | 6.5m Ω @ 10A, 10V | 3V @ 250μA | 1500pF @ 25V | 12nC @ 4.5V | 18ns | 30V | 4 ns | 78.5A | 22V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STS10DN3LH5 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 13 ns | NRND (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | STripFET™ V | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 21MOhm | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.5W | 鸥翼 | 260 | 30 | STS10 | 8 | 增强型MOSFET | 2.5W | 4 ns | 2 N-Channel (Dual) | SWITCHING | 21m Ω @ 5A, 10V | 1V @ 250μA | 475pF @ 25V | 4.6nC @ 5V | 22ns | 30V | 2.8 ns | 10A | 22V | 30V | 40A | 50 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
| STL8DN6LF3 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 32.5 ns | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | 2 | -55°C~175°C TJ | Tape & Reel (TR) | Automotive, AEC-Q101, STripFET™ III | 活跃 | 1 (Unlimited) | EAR99 | 65W | STL8 | 65W | 9 ns | 2 N-Channel (Dual) | 30m Ω @ 4A, 10V | 3V @ 250μA | 668pF @ 25V | 13nC @ 10V | 7.7ns | 60V | 5 ns | 20A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL20DN10F7 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 ns | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 2 | -55°C~150°C TJ | Cut Tape (CT) | DeepGATE™, STripFET™ VII | 活跃 | 1 (Unlimited) | 6 | EAR99 | 65mOhm | 62.5W | FLAT | 未说明 | 未说明 | STL20 | R-PDSO-F6 | 2 | Dual | 增强型MOSFET | DRAIN | 6.3 ns | 2 N-Channel (Dual) | SWITCHING | 67m Ω @ 2.5A, 10V | 4.5V @ 250μA | 408pF @ 50V | 7.8nC @ 10V | 3ns | 100V | 4 ns | 20A | 20V | 100V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
| STS4DPF30L | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 125 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Cut Tape (CT) | STripFET™ | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 80mOhm | Matte Tin (Sn) - annealed | -30V | 2W | 鸥翼 | 260 | -4A | 30 | STS4D | 8 | Single | 增强型MOSFET | 2W | 25 ns | 2 P-Channel (Dual) | SWITCHING | 80m Ω @ 2A, 10V | 1V @ 250μA | 1350pF @ 25V | 16nC @ 5V | 35ns | 30V | 35 ns | 4A | 1V | 16V | 4A | -30V | 16A | METAL-OXIDE SEMICONDUCTOR | Standard | 1.25mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
| STL13DP10F6 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | -55°C~150°C TJ | Cut Tape (CT) | DeepGATE™, STripFET™ VI | Discontinued | 1 (Unlimited) | EAR99 | 62.5W | 未说明 | 未说明 | STL13 | 62.5W | 2 P-Channel (Dual) | 180m Ω @ 1.7A, 10V | 4V @ 250μA | 864pF @ 25V | 16.5nC @ 10V | 100V | 13A | 逻辑电平门 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | STC5NF20V | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 27 ns | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Cut Tape (CT) | STripFET™ II | e4 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 低阈值 | 20V | 1.5W | 鸥翼 | 260 | 5A | 10 | STC5NF | 8 | 不合格 | 增强型MOSFET | 1.5W | 2 N-Channel (Dual) | SWITCHING | 40m Ω @ 2.5A, 4.5V | 600mV @ 250μA | 460pF @ 15V | 11.5nC @ 4.5V | 33ns | 33 ns | 5A | 12V | 5A | 0.045Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant |