类别是'晶体管 - FET，MOSFET - 阵列'
晶体管 - FET，MOSFET - 阵列 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 额定功率 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 配置 | 行间距 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)（最大值） | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间（典型值） | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | DS 击穿电压-最小值 | 雪崩能量等级（Eas） | 场效应管技术 | 恢复时间 | 最大结点温度（Tj） | 场效应管特性 | 栅源电压 | 反馈上限-最大值 (Crss) | 最小击穿电压 | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | NTJD4152PT2G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 272mW | 鸥翼 | 未说明 | 未说明 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 增强型MOSFET | 272mW | 2 P-Channel (Dual) | SWITCHING | 260m Ω @ 880mA, 4.5V | 1.2V @ 250μA | 155pF @ 20V | 2.2nC @ 4.5V | 20V | 880mA | 0.88A | 0.26Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FDD8424H | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 17 Weeks | 2 | 20 ns | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 5 | 260.37mg | SILICON | 9A 6.5A | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | 24MOhm | Tin (Sn) | 3.1W | SINGLE | 鸥翼 | FDD8424 | R-PSSO-G4 | 2 | 增强型MOSFET | 3.1W | DRAIN | 7 ns | 1.3W | N and P-Channel | SWITCHING | 24m Ω @ 9A, 10V | 3V @ 250μA | 1000pF @ 20V | 20nC @ 10V | 3ns | N-CHANNEL AND P-CHANNEL | 3 ns | 9A | 1.7V | 20V | 9A | 40V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 2.517mm | 6.73mm | 6.22mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
 | AOP605 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | 2 | -55°C~150°C TJ | Tube | Obsolete | 1 (Unlimited) | 2.5W | unknown | 2.5W | N and P-Channel | 28m Ω @ 7.5A, 10V | 3V @ 250μA | 820pF @ 15V | 16.6nC @ 4.5V | 30V | 20V | 逻辑电平门 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FDS4559 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 2 | 19 ns | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 4.5A 3.5A | -55°C~175°C TJ | Tape & Reel (TR) | 2002 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 55MOhm | 2W | 鸥翼 | 4.5A | 2 | Dual | 增强型MOSFET | 2W | 1W | N and P-Channel | SWITCHING | 55m Ω @ 4.5A, 10V | 3V @ 250μA | 650pF @ 25V | 18nC @ 10V | 10ns | N-CHANNEL AND P-CHANNEL | 12 ns | 4.5A | 2.2V | 20V | 60V | 60V | 90 mJ | METAL-OXIDE SEMICONDUCTOR | 175°C | 逻辑电平门 | 2.2 V | 1.75mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
 | NTMD6N02R2G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 45 Weeks | 2 | 45 ns | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | SILICON | 3.92A | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 35MOhm | 逻辑电平兼容 | 20V | 2W | 鸥翼 | 260 | 6A | 40 | NTMD6N02 | 8 | Dual | 增强型MOSFET | 2W | 12 ns | 730mW | 2 N-Channel (Dual) | SWITCHING | 35m Ω @ 6A, 4.5V | 1.2V @ 250μA | 1100pF @ 16V | 20nC @ 4.5V | 50ns | 80 ns | 6.5A | 12V | 20V | 30A | 360 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 900 mV | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
 | NDC7002N | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 11 ns | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 1998 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 2Ohm | 50V | 700mW | 鸥翼 | 350mA | 2 | Dual | 增强型MOSFET | 960mW | 6 ns | 2 N-Channel (Dual) | SWITCHING | 2 Ω @ 510mA, 10V | 2.5V @ 250μA | 20pF @ 25V | 1nC @ 10V | 6ns | 6 ns | 510mA | 1.9V | 20V | 0.51A | 50V | 50V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.9 V | 900μm | 3mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
 | IRF7303TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 22 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 50mOhm | Matte Tin (Sn) | 超低电阻 | 30V | 2W | 鸥翼 | 260 | 4.9A | 30 | IRF7303PBF | Dual | 增强型MOSFET | 2W | 6.8 ns | 2 N-Channel (Dual) | SWITCHING | 50m Ω @ 2.4A, 10V | 1V @ 250μA | 520pF @ 25V | 25nC @ 10V | 21ns | 7.7 ns | 4.9A | 1V | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 71 ns | Standard | 1 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
| IRF7341TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 32 ns | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 50mOhm | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 55V | 2W | 鸥翼 | 260 | 4.7A | 30 | IRF7341PBF | 6.3 mm | 2 | Dual | 增强型MOSFET | 2W | 8.3 ns | 2 N-Channel (Dual) | SWITCHING | 50m Ω @ 4.7A, 10V | 1V @ 250μA | 740pF @ 25V | 36nC @ 10V | 3.2ns | 13 ns | 4.7A | 1V | 20V | 5.1A | 55V | 55V | 140 mJ | METAL-OXIDE SEMICONDUCTOR | 90 ns | 150°C | 逻辑电平门 | 1 V | 1.75mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||||||||||||||||||||
 | 2N7002DW-7-F | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 2 | 11 ns | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 6.010099mg | SILICON | 230mA | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 7.5Ohm | HIGH RELIABILITY | 60V | 200mW | 鸥翼 | 260 | 115mA | 40 | 6 | 2 | Dual | 增强型MOSFET | 200mW | 7 ns | 310mW | 2 N-Channel (Dual) | SWITCHING | 7.5 Ω @ 50mA, 5V | 2V @ 250μA | 50pF @ 25V | 115mA | 2V | 20V | 0.115A | 70V | 60V | METAL-OXIDE SEMICONDUCTOR | Standard | 2 V | 5 pF | 1mm | 2.2mm | 1.35mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
| FDC3601N | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 11 ns | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 500MOhm | Tin (Sn) | 100V | 960mW | 鸥翼 | 1A | Dual | 增强型MOSFET | 960mW | 8 ns | 700mW | 2 N-Channel (Dual) | SWITCHING | 500m Ω @ 1A, 10V | 4V @ 250μA | 153pF @ 50V | 5nC @ 10V | 4ns | 4 ns | 1A | 2.6V | 20V | 1A | 100V | METAL-OXIDE SEMICONDUCTOR | Standard | 1mm | 3mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
 | FDG6301N | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 4 ns | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 28mg | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 4Ohm | 逻辑电平兼容 | 25V | 300mW | 鸥翼 | 220mA | Dual | 增强型MOSFET | 300mW | 5 ns | 2 N-Channel (Dual) | SWITCHING | 4 Ω @ 220mA, 4.5V | 1.5V @ 250μA | 9.5pF @ 10V | 0.4nC @ 4.5V | 4.5ns | 4.5 ns | 220mA | 850mV | 8V | 25V | 25V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.1mm | 2mm | 1.25mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
| NDC7001C | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 2 | 8 ns | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 510mA 340mA | -55°C~150°C TJ | Tape & Reel (TR) | 2002 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 2Ohm | 700mW | 鸥翼 | 350mA | 2 | Dual | 增强型MOSFET | 960mW | 2.8 ns | N and P-Channel | SWITCHING | 2 Ω @ 510mA, 10V | 2.5V @ 250μA | 20pF @ 25V | 1.5nC @ 10V | 10ns | N-CHANNEL AND P-CHANNEL | 10 ns | 510mA | 2.1V | 20V | 0.51A | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 2.1 V | 60V | 900μm | 3mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||
| IRF7309TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 2 | 25 ns | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 4A 3A | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 50mOhm | 超低电阻 | 1.4W | DUAL | 鸥翼 | 4A | IRF7309PBF | 6.3 mm | 增强型MOSFET | 1.4W | N and P-Channel | SWITCHING | 50m Ω @ 2.4A, 10V | 1V @ 250μA | 520pF @ 15V | 25nC @ 4.5V | N-CHANNEL AND P-CHANNEL | 4A | 1V | 20V | 4A | 30V | 16A | METAL-OXIDE SEMICONDUCTOR | Standard | 1 V | 1.4986mm | 4.9784mm | 4.05mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
| FDS4935BZ | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 2 | 68 ns | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 6.9A | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 22MOhm | Tin (Sn) | ESD PROTECTION | -30V | 1.6W | 鸥翼 | -6.9A | 2 | Dual | 增强型MOSFET | 1.6W | 12 ns | 900mW | 2 P-Channel (Dual) | SWITCHING | 22m Ω @ 6.9A, 10V | 3V @ 250μA | 1360pF @ 15V | 40nC @ 10V | 13ns | 30V | 13 ns | -6.9A | -1.9V | 25V | -30V | -30V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.9 V | 1.75mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||
| IRF7307TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 2 | 51 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 5.2A 4.3A | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 50mOhm | Matte Tin (Sn) | 超低电阻 | 2W | DUAL | 鸥翼 | 5.2A | IRF7307PBF | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 50m Ω @ 2.6A, 4.5V | 700mV @ 250μA | 660pF @ 15V | 20nC @ 4.5V | 26ns | N-CHANNEL AND P-CHANNEL | 33 ns | 5.2A | 700mV | 12V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 700 mV | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||
| IRF7304TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 2 | 51 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 4.3A | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | 活跃 | 1 (Unlimited) | 8 | 90mOhm | 逻辑电平兼容 | 2W | -20V | 2W | 鸥翼 | -4.3A | IRF7304PBF | Dual | 增强型MOSFET | 2W | 8.4 ns | 2 P-Channel (Dual) | 90m Ω @ 2.2A, 4.5V | 700mV @ 250μA | 610pF @ 15V | 22nC @ 4.5V | 26ns | 20V | 33 ns | -4.3A | -700mV | 12V | 3.6A | -20V | METAL-OXIDE SEMICONDUCTOR | 84 ns | 逻辑电平门 | -700 mV | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||||||||||||||||||||||||||||
| FDC6303N | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 17 ns | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 450mOhm | Tin (Sn) | 逻辑电平兼容 | 25V | 900mW | 鸥翼 | 680mA | 2 | Dual | 增强型MOSFET | 900mW | 3 ns | 700mW | 2 N-Channel (Dual) | SWITCHING | 450m Ω @ 500mA, 4.5V | 1.5V @ 250μA | 50pF @ 10V | 2.3nC @ 4.5V | 8.5ns | 13 ns | 680mA | 800mV | 8V | 25V | 25V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 800 mV | 1.1mm | 3mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||
| IRF7328TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 2 | 198 ns | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 8A | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 21MOhm | 超低电阻 | -30V | 2W | 鸥翼 | -8A | IRF7328PBF | 6.3 mm | 2 | Dual | 增强型MOSFET | 2W | 13 ns | 2 P-Channel (Dual) | SWITCHING | 21m Ω @ 8A, 10V | 2.5V @ 250μA | 2675pF @ 25V | 78nC @ 10V | 15ns | 30V | 98 ns | -8A | -1V | 20V | 8A | -30V | -30V | METAL-OXIDE SEMICONDUCTOR | 56 ns | 150°C | 逻辑电平门 | -2.5 V | 1.75mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||
| IRF7306TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 2 | 25 ns | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 3.6A | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 100mOhm | 超低电阻 | -30V | 2W | 鸥翼 | -3.6A | IRF7306PBF | 6.3 mm | 2 | Dual | 增强型MOSFET | 2W | 11 ns | 2 P-Channel (Dual) | SWITCHING | 100m Ω @ 1.8A, 10V | 1V @ 250μA | 440pF @ 25V | 25nC @ 10V | 17ns | 30V | 18 ns | -3.6A | -1V | 20V | -30V | 14A | METAL-OXIDE SEMICONDUCTOR | 80 ns | 150°C | 逻辑电平门 | -1 V | 1.75mm | 4.9784mm | 4.05mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
 | BSD235CH6327XTSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 2 | 表面贴装 | 表面贴装 | 6-VSSOP, SC-88, SOT-363 | 6 | SILICON | 950mA 530mA | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | OptiMOS™ | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 雪崩 额定 | 8541.21.00.95 | 500mW | DUAL | 鸥翼 | 未说明 | 未说明 | BSD235 | AEC-Q101 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | N and P-Channel | 350m Ω @ 950mA, 4.5V | 1.2V @ 1.6μA | 无卤素 | 47pF @ 10V | 0.34nC @ 4.5V | 20V | N-CHANNEL AND P-CHANNEL | 530mA | 12V | -20V | 0.95A | 0.35Ohm | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
 | IPG20N06S4L11ATMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 58 ns | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2003 | Automotive, AEC-Q101, OptiMOS™ | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 逻辑电平兼容 | 65W | FLAT | 未说明 | not_compliant | 未说明 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 11 ns | 65W | 2 N-Channel (Dual) | 11.2m Ω @ 17A, 10V | 2.2V @ 28μA | 无卤素 | 4020pF @ 25V | 53nC @ 10V | 3ns | 19 ns | 20A | 16V | 60V | 0.0112Ohm | 165 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||
| IRF7324TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 2 | 170 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 9A | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 18mOhm | Matte Tin (Sn) | HIGH RELIABILITY | -20V | 2W | 鸥翼 | 260 | -9A | 30 | IRF7324PBF | Dual | 增强型MOSFET | 2W | 17 ns | 2 P-Channel (Dual) | SWITCHING | 18m Ω @ 9A, 4.5V | 1V @ 250μA | 2940pF @ 15V | 63nC @ 5V | 36ns | 20V | 190 ns | -9A | -1V | 12V | 9A | -20V | 71A | METAL-OXIDE SEMICONDUCTOR | 270 ns | 150°C | 逻辑电平门 | 1.75mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||||||||||||||||||||||
| FDC6301N | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 4 ns | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 4Ohm | 逻辑电平兼容 | 25V | 900mW | 鸥翼 | 220mA | Dual | 增强型MOSFET | 900mW | 5 ns | 700mW | 2 N-Channel (Dual) | SWITCHING | 4 Ω @ 400mA, 4.5V | 1.5V @ 250μA | 9.5pF @ 10V | 0.7nC @ 4.5V | 4.5ns | 4.5 ns | 220mA | 850mV | 8V | 25V | 25V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 850 mV | 1mm | 3mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
| FDS8958A | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 2 | 14 ns | ACTIVE (Last Updated: 15 hours ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 7A 5A | Tape & Reel (TR) | 2007 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | 28mOhm | 150°C | -55°C | 2W | DUAL | 鸥翼 | 7A | 增强型MOSFET | 2W | 900mW | N and P-Channel | SWITCHING | 28m Ω @ 7A, 10V | 3V @ 250μA | 575pF @ 15V | 16nC @ 10V | 13ns | N-CHANNEL AND P-CHANNEL | 9 ns | 7A | 1.9V | 20V | 7A | 30V | 30V | 54 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.9 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
| FDC6333C | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 2 | 11 ns | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 2.5A 2A | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 95MOhm | 960mW | 鸥翼 | 2.5A | 2 | Dual | 增强型MOSFET | 960mW | 4.5 ns | 700mW | N and P-Channel | SWITCHING | 95m Ω @ 2.5A, 10V | 3V @ 250μA | 282pF @ 15V | 6.6nC @ 10V | 13ns | 30V | N-CHANNEL AND P-CHANNEL | 13 ns | 2.5A | 1.8V | 25V | -30V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.8 V | 1mm | 3mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 |