![PMT760EN,135](https://static.esinoelec.com/200dimg/weensemiconductors-bt168gw115-3158.jpg)
规格参数
- 类型参数全选
安装类型
Surface Mount
包装/外壳
TO-261-4, TO-261AA
900mA Ta
4.5V 10V
800mW Ta 6.2W Tc
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
已出版
2012
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
引脚数量
4
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
950m Ω @ 800mA, 10V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 250μA
输入电容(Ciss)(Max)@Vds
160pF @ 80V
门极电荷(Qg)(最大)@Vgs
3nC @ 10V
漏源电压 (Vdss)
100V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
相关型号
- 图片产品型号品牌Package / CaseDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CPower Dissipation-MaxBrand NameMoisture Sensitivity Level (MSL)Vgs(th) (Max) @ IdTechnology
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PMT760EN,135
TO-261-4, TO-261AA
100V
900mA (Ta)
800mW (Ta), 6.2W (Tc)
NXP Semiconductor
1 (Unlimited)
2.5V @ 250μA
MOSFET (Metal Oxide)
-
TO-261-4, TO-261AA
100V
1.8A (Ta)
800mW (Ta), 8.3W (Tc)
NXP Semiconductor
1 (Unlimited)
2.5V @ 250μA
MOSFET (Metal Oxide)
-
TO-261-4, TO-261AA
100V
1.8A (Ta)
800mW (Ta), 8.3W (Tc)
NXP Semiconductor
1 (Unlimited)
2.5V @ 250μA
MOSFET (Metal Oxide)
PMT760EN,135 PDF数据手册
- 数据表 :
- PCN 报废/ EOL :