![PMT200EN,115](https://static.esinoelec.com/200dimg/weensemiconductors-bt168gw115-3158.jpg)
规格参数
- 类型参数全选
安装类型
Surface Mount
包装/外壳
TO-261-4, TO-261AA
表面安装
YES
1.8A Ta
4.5V 10V
800mW Ta 8.3W Tc
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
已出版
2012
JESD-609代码
e3
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
端子表面处理
Tin (Sn)
引脚数量
4
配置
Single
操作模式
ENHANCEMENT MODE
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
235m Ω @ 1.5A, 10V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 250μA
输入电容(Ciss)(Max)@Vds
475pF @ 80V
门极电荷(Qg)(最大)@Vgs
10nC @ 10V
漏源电压 (Vdss)
100V
Vgs(最大值)
±20V
最大漏极电流 (Abs) (ID)
1.8A
RoHS状态
ROHS3 Compliant
相关型号
- 图片产品型号品牌Package / CaseDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CPower Dissipation-MaxVgs (Max)Operating TemperaturePart StatusTechnology
-
PMT200EN,115
TO-261-4, TO-261AA
100V
1.8A (Ta)
800mW (Ta), 8.3W (Tc)
±20V
-55°C ~ 150°C (TJ)
Obsolete
MOSFET (Metal Oxide)
-
TO-261-4, TO-261AA
100V
900mA (Ta)
800mW (Ta), 6.2W (Tc)
±20V
-55°C ~ 150°C (TJ)
Obsolete
MOSFET (Metal Oxide)
-
TO-261-4, TO-261AA
100V
900mA (Ta)
800mW (Ta), 6.2W (Tc)
±20V
-55°C ~ 150°C (TJ)
Obsolete
MOSFET (Metal Oxide)
-
TO-261-4, TO-261AA
240V
350mA (Ta)
1.7W (Ta)
±20V
-55°C ~ 150°C (TJ)
Obsolete
MOSFET (Metal Oxide)
-
TO-261-4, TO-261AA
250V
260mA (Ta)
1.8W (Ta)
±20V
-55°C ~ 150°C (TJ)
Obsolete
MOSFET (Metal Oxide)
PMT200EN,115 PDF数据手册
- PCN 报废/ EOL :