制造商是'ON Semiconductor'
ON Semiconductor 晶体管 - FET，MOSFET - 单个
(6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 额定直流 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)（最大值） | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | Vgs（最大值） | 下降时间（典型值） | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | 雪崩能量等级（Eas） | 最大结点温度（Tj） | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||
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 | 2N7002LT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 5V 10V | 1 | 225mW Ta | 40 ns | ACTIVE (Last Updated: 4 days ago) | Tin | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | YES | 3 | SILICON | 115mA Tc | -55°C~150°C TJ | Cut Tape (CT) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 7.5Ohm | 60V | DUAL | 鸥翼 | 115mA | 3 | 1 | Single | 增强型MOSFET | 225mW | 20 ns | N-Channel | SWITCHING | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 无卤素 | 50pF @ 25V | ±20V | 115mA | 1V | 20V | 60V | 150°C | 2.5 V | 5 pF | 1.11mm | 3.04mm | 1.4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||
 | NTA4153NT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 1.5V 4.5V | 1 | 300mW Tj | 25 ns | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | SC-75, SOT-416 | YES | 3 | SILICON | 915mA Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 127mOhm | Tin (Sn) | 20V | DUAL | 鸥翼 | 915mA | 3 | Single | 增强型MOSFET | 300mW | 3.7 ns | N-Channel | SWITCHING | 230m Ω @ 600mA, 4.5V | 1.1V @ 250μA | 110pF @ 16V | 1.82nC @ 4.5V | 4.4ns | ±6V | 4.4 ns | 915mA | 760mV | 6V | 20V | 760 mV | 800μm | 800μm | 1.6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||
 | FDB24AN06LA0 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5V 10V | 75W Tc | 28 ns | 表面贴装 | 表面贴装 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | 7.8A Ta 40A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2004 | PowerTrench® | Obsolete | 1 (Unlimited) | 175°C | -55°C | 60V | 36A | Single | 75W | N-Channel | 19mOhm @ 40A, 10V | 3V @ 250μA | 1850pF @ 25V | 21nC @ 5V | 101ns | 60V | ±20V | 49 ns | 40A | 20V | 60V | 1.85nF | 20mOhm | 19 mΩ | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
 | FDI2532 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6V 10V | 310W Tc | 通孔 | TO-262-3 Long Leads, I2Pak, TO-262AA | I2PAK (TO-262) | 8A Ta 79A Tc | -55°C~175°C TJ | Tube | 2002 | PowerTrench® | Obsolete | 1 (Unlimited) | N-Channel | 16mOhm @ 33A, 10V | 4V @ 250μA | 5870pF @ 25V | 107nC @ 10V | 150V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FDD16AN08A0-F085 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6V 10V | 1 | 135W Tc | 32 ns | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | 260.37mg | SILICON | 9A Ta 50A Tc | -55°C~175°C TJ | Tape & Reel (TR) | Automotive, AEC-Q101, UltraFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 2 | Tin (Sn) | 鸥翼 | R-PSSO-G2 | Single | 增强型MOSFET | 135W | DRAIN | 8 ns | N-Channel | SWITCHING | 16m Ω @ 50A, 10V | 4V @ 250μA | 1874pF @ 25V | 47nC @ 10V | 54ns | ±20V | 22 ns | 50A | TO-252AA | 20V | 9A | 75V | 95 mJ | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||
 | BSS138K | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 1.8V 2.5V | 1 | 350mW Ta | 60 ns | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | SOT-23-3 | 30mg | 220mA Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | 活跃 | 1 (Unlimited) | 1.6Ohm | 150°C | -55°C | BSS138 | Single | 350mW | 5 ns | N-Channel | 1.6Ohm @ 50mA, 5V | 1.2V @ 250μA | 58pF @ 25V | 2.4nC @ 10V | 5ns | 50V | ±12V | 35 ns | 220mA | 600mV | 12V | 50V | 58pF | 1.6Ohm | 1.6 Ω | 600 mV | 930μm | 2.92mm | 1.3mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
 | BSS138LT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 5V | 1 | 225mW Ta | 20 ns | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | YES | 3 | SILICON | 200mA Ta | -55°C~150°C TJ | Cut Tape (CT) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 3.5Ohm | 50V | DUAL | 鸥翼 | 260 | 200mA | 40 | 3 | Single | 增强型MOSFET | 225mW | 20 ns | N-Channel | SWITCHING | 3.5 Ω @ 200mA, 5V | 1.5V @ 1mA | 无卤素 | 50pF @ 25V | ±20V | 200mA | 1.5V | 20V | 0.2A | 50V | 1.5 V | 5 pF | 1.01mm | 3.04mm | 1.4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||
| BSS138L | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 2.75V 5V | 1 | 350mW Ta | 20 ns | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | 30mg | SILICON | 200mA Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | DUAL | 鸥翼 | 260 | 40 | 3 | 不合格 | 1 | Single | 增强型MOSFET | 225mW | 20 ns | N-Channel | SWITCHING | 3.5 Ω @ 200mA, 5V | 1.5V @ 1mA | 50pF @ 25V | 2.4nC @ 10V | 1.8ns | ±20V | 5.1 ns | 200mA | 1.25V | 20V | 0.2A | 50V | 150°C | 5 pF | 1.11mm | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||
| NVR5198NLT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 4.5V 10V | 900mW Ta | 13 ns | ACTIVE (Last Updated: 4 days ago) | Tin | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | YES | 3 | 1.7A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | 3 | 1 | Single | 1.5W | 5 ns | N-Channel | 155m Ω @ 1A, 10V | 2.5V @ 250μA | 无卤素 | 182pF @ 25V | 5.1nC @ 10V | 7ns | ±20V | 2 ns | 2.2A | 2.5V | 20V | 60V | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
| NDS0605 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 4.5V 10V | 1 | 360mW Ta | 20 ns | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | 30mg | SILICON | 180mA Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2002 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 5Ohm | -60V | DUAL | 鸥翼 | -180mA | 1 | Single | 增强型MOSFET | 360mW | 5 ns | P-Channel | SWITCHING | 5 Ω @ 500mA, 10V | 3V @ 250μA | 79pF @ 25V | 2.5nC @ 10V | 6.3ns | 60V | ±20V | 6.3 ns | 180mA | -1.7V | 20V | -60V | -60V | 150°C | -1.7 V | 5 pF | 1.2mm | 2.92mm | 3.05mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||
| BSS123LT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 10V | 1 | 225mW Ta | 40 ns | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | SILICON | 170mA Ta | -55°C~150°C TJ | Cut Tape (CT) | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 6Ohm | 100V | DUAL | 鸥翼 | 260 | 170mA | 40 | 3 | Single | 增强型MOSFET | 225mW | 20 ns | N-Channel | SWITCHING | 6 Ω @ 100mA, 10V | 2.6V @ 1mA | 20pF @ 25V | ±20V | 170mA | 800mV | 20V | 100V | 20 V | 1.01mm | 3.04mm | 1.4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||
| FDB33N25TM | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 10V | 1 | 235W Tc | 75 ns | ACTIVE (Last Updated: 19 hours ago) | Tin | 表面贴装 | 表面贴装 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | 1.31247g | SILICON | 33A Tc | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | UniFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 2 | EAR99 | 94MOhm | FAST SWITCHING, AVALANCHE RATED | 鸥翼 | R-PSSO-G2 | Single | 增强型MOSFET | 235W | DRAIN | 35 ns | N-Channel | SWITCHING | 94m Ω @ 16.5A, 10V | 5V @ 250μA | 2135pF @ 25V | 48nC @ 10V | 230ns | ±30V | 120 ns | 33A | 3V | 30V | 250V | 3 V | 4.83mm | 10.67mm | 11.33mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||
| BSS84LT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | 5V | 1 | 225mW Ta | 16 ns | ACTIVE (Last Updated: 4 days ago) | Tin | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | YES | 3 | SILICON | 130mA Ta | -55°C~150°C TJ | Cut Tape (CT) | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 10Ohm | -50V | DUAL | 鸥翼 | 260 | -130mA | 10 | 3 | Single | 增强型MOSFET | 225mW | 3.6 ns | P-Channel | SWITCHING | 10 Ω @ 100mA, 5V | 2V @ 250μA | 无卤素 | 30pF @ 5V | 1ns | ±20V | 1 ns | 130mA | -2V | 20V | 50V | 2 V | 1.016mm | 3.0226mm | 1.397mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||
 | FDS4465 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 1.8V 4.5V | 1 | 2.5W Ta | 300 ns | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 130mg | SILICON | 13.5A Ta | -55°C~175°C TJ | Tape & Reel (TR) | 2003 | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 8.5MOhm | Nickel/Palladium/Gold (Ni/Pd/Au) | -20V | DUAL | 鸥翼 | -13.5A | 1 | Single | 增强型MOSFET | 2.5W | 20 ns | P-Channel | SWITCHING | 8.5m Ω @ 13.5A, 4.5V | 1.5V @ 250μA | 8237pF @ 10V | 120nC @ 4.5V | 24ns | 20V | ±8V | 140 ns | 13.5A | -600mV | 8V | -20V | 50A | -20V | 175°C | -600 mV | 1.75mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||
| FDS6681Z | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 4.5V 10V | 1 | 2.5W Ta | 660 ns | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 130mg | SILICON | 20A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 4.6MOhm | Nickel/Palladium/Gold (Ni/Pd/Au) | -30V | DUAL | 鸥翼 | -20A | 1 | Single | 增强型MOSFET | 2.5W | 20 ns | P-Channel | SWITCHING | 4.6m Ω @ 20A, 10V | 3V @ 250μA | 7540pF @ 15V | 260nC @ 10V | 9ns | ±25V | 380 ns | -20A | -1.8V | 25V | -30V | 30V | 150°C | 1.8 V | 1.75mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||
| NDS355AN | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 4.5V 10V | 1 | 500mW Ta | 13 ns | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | 30mg | SILICON | 1.7A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 1998 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 85mOhm | 30V | DUAL | 鸥翼 | 未说明 | 1.7A | 未说明 | 不合格 | 1 | Single | 增强型MOSFET | 500mW | 10 ns | N-Channel | SWITCHING | 85m Ω @ 1.9A, 10V | 2V @ 250μA | 195pF @ 15V | 5nC @ 5V | 32ns | ±20V | 32 ns | 1.7A | 20V | 30V | 30V | 150°C | 1.6 V | 1.22mm | 2.92mm | 3.05mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||
 | NDT2955 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 4.5V 10V | 1 | 3W Ta | 19 ns | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | 表面贴装 | TO-261-4, TO-261AA | 4 | 250.2mg | SILICON | 2.5A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2002 | e3 | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | 300MOhm | -60V | DUAL | 鸥翼 | -2.5A | 1 | Single | 增强型MOSFET | 3W | DRAIN | 12 ns | P-Channel | SWITCHING | 300m Ω @ 2.5A, 10V | 4V @ 250μA | 601pF @ 30V | 15nC @ 10V | 10ns | ±20V | 6 ns | 2.5A | 2.6V | 20V | -60V | 60V | 150°C | -2.6 V | 1.8mm | 6.5mm | 3.56mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||
| FDS4435BZ | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 4.5V 10V | 1 | 2.5W Ta | 30 ns | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 130mg | SILICON | 8.8A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 20MOhm | -30V | DUAL | 鸥翼 | -8.8A | 1 | Single | 增强型MOSFET | 2.5W | 10 ns | P-Channel | SWITCHING | 20m Ω @ 8.8A, 10V | 3V @ 250μA | 1845pF @ 15V | 40nC @ 10V | 13ns | 30V | ±25V | 38 ns | -8.8A | -2.1V | 25V | -30V | 150°C | -2.1 V | 345 pF | 1.75mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||
| FDN338P | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 2.5V 4.5V | 1 | 500mW Ta | 16 ns | ACTIVE (Last Updated: 6 days ago) | Tin | 表面贴装 | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | 30mg | SILICON | 1.6A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 115mOhm | 逻辑电平兼容 | -20V | DUAL | 鸥翼 | -1.6A | 1 | Single | 增强型MOSFET | 500mW | 10 ns | P-Channel | SWITCHING | 115m Ω @ 1.6A, 4.5V | 1.5V @ 250μA | 451pF @ 10V | 6.2nC @ 4.5V | 11ns | 20V | ±8V | 11 ns | 1.6A | -800mV | 8V | -20V | 150°C | -800 mV | 1.22mm | 3.05mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||
| FDB3632 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 6V 10V | 1 | 310W Tc | 96 ns | ACTIVE (Last Updated: 20 hours ago) | Tin | 表面贴装 | 表面贴装 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | 1.31247g | SILICON | 12A Ta 80A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 9MOhm | 100V | 鸥翼 | 44A | R-PSSO-G2 | 1 | Single | 增强型MOSFET | 310W | DRAIN | 30 ns | N-Channel | SWITCHING | 9m Ω @ 80A, 10V | 4V @ 250μA | 6000pF @ 25V | 110nC @ 10V | 39ns | ±20V | 46 ns | 80A | 4V | 20V | 100V | 100V | 175°C | 4 V | 5.08mm | 10.67mm | 9.65mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||
 | FDC5612 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 6V 10V | 1 | 1.6W Ta | 19 ns | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 4.3A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 55mOhm | 60V | DUAL | 鸥翼 | 4.3A | 1 | Single | 增强型MOSFET | 1.6W | 11 ns | N-Channel | SWITCHING | 55m Ω @ 4.3A, 10V | 4V @ 250μA | 650pF @ 25V | 18nC @ 10V | 8ns | ±20V | 8 ns | 4.3A | 2.2V | 20V | 60V | 60V | 150°C | 1.1mm | 3mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||
| FDS6690A | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 4.5V 10V | 1 | 2.5W Ta | 28 ns | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 130mg | SILICON | 11A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 12.5MOhm | Nickel/Palladium/Gold (Ni/Pd/Au) | 逻辑电平兼容 | 30V | DUAL | 鸥翼 | 11A | Single | 增强型MOSFET | 2.5W | 9 ns | N-Channel | SWITCHING | 12.5m Ω @ 11A, 10V | 3V @ 250μA | 1205pF @ 15V | 16nC @ 5V | 5ns | ±20V | 9 ns | 11A | 1.9V | 20V | 30V | 30V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||
 | NTD20P06LT4G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 5V | 1 | 65W Tc | 28 ns | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | YES | 3 | SILICON | 15.5A Ta | -55°C~175°C TJ | Cut Tape (CT) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 2 | EAR99 | 130mOhm | -60V | 鸥翼 | 260 | -15A | 40 | 3 | R-PSSO-G2 | Single | 增强型MOSFET | 65W | DRAIN | 11 ns | P-Channel | SWITCHING | 150m Ω @ 7.5A, 5V | 2V @ 250μA | 1190pF @ 25V | 26nC @ 5V | 90ns | 60V | ±20V | 70 ns | 15.5A | -1.5V | 20V | -60V | 50A | -1.5 V | 2.38mm | 6.73mm | 6.22mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||
| FDS3672 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 6V 10V | 1 | 2.5W Ta | 37 ns | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 130mg | SILICON | 7.5A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2003 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 19MOhm | Tin (Sn) | 100V | DUAL | 鸥翼 | 7.5A | Single | 增强型MOSFET | 2.5W | 14 ns | N-Channel | SWITCHING | 23m Ω @ 7.5A, 10V | 4V @ 250μA | 2015pF @ 25V | 37nC @ 10V | 20ns | ±20V | 27 ns | 7.5A | 4V | 20V | 100V | 100V | 4 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||
| FDN5618P | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 4.5V 10V | 1 | 500mW Ta | 16.5 ns | ACTIVE (Last Updated: 15 hours ago) | Tin | 表面贴装 | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | 30mg | SILICON | 1.25A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2000 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 170mOhm | -60V | DUAL | 鸥翼 | 260 | -1.25A | 30 | 1 | Single | 增强型MOSFET | 500mW | 6.5 ns | P-Channel | SWITCHING | 170m Ω @ 1.25A, 10V | 3V @ 250μA | 430pF @ 30V | 13.8nC @ 10V | 8ns | 60V | ±20V | 8 ns | 1.2A | -1.6V | 20V | -60V | -60V | 150°C | 20 V | 1.22mm | 2.92mm | 1.4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 |