N/A

-

30 Weeks

42 ns

通孔

通孔

ISOPLUSi5-Pak™

5

SILICON

2

-55°C~175°C TJ

Tube

2012

Trench™

yes

活跃

1 (Unlimited)

5

EAR99

雪崩 额定

150W

SINGLE

未说明

未说明

5

不合格

COMPLEX

增强型MOSFET

150W

ISOLATED

2 N-Channel (Dual)

SWITCHING

7.4m Ω @ 50A, 10V

4.5V @ 250μA

6900pF @ 25V

151nC @ 10V

54ns

100V

31 ns

100A

0.0074Ohm

100V

METAL-OXIDE SEMICONDUCTOR

Standard

ROHS3 Compliant

无铅

N/A

-

30 Weeks

通孔

通孔

ISOPLUSi5-Pak™

SILICON

2

-55°C~175°C TJ

Tube

2009

HiPerFET™, TrenchT2™

e1

yes

活跃

1 (Unlimited)

5

EAR99

锡银铜

AVALANCHE RATED, UL RECOGNIZED

170W

SINGLE

5

R-PSIP-T5

增强型MOSFET

170W

ISOLATED

2 N-Channel (Dual) Asymmetrical

SWITCHING

5.8m Ω @ 100A, 10V

4V @ 250μA

10500pF @ 25V

178nC @ 10V

75V

120A

0.0058Ohm

500A

75V

850 mJ

METAL-OXIDE SEMICONDUCTOR

Standard

无

ROHS3 Compliant

N/A

-

32 Weeks

100 ns

通孔

通孔

ISOPLUS264™

5

SILICON

2

-55°C~150°C TJ

Tube

2009

CoolMOS™

e1

yes

活跃

1 (Unlimited)

5

Tin/Silver/Copper (Sn/Ag/Cu)

雪崩 额定

SINGLE

未说明

未说明

5

不合格

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

增强型MOSFET

480W

ISOLATED

2 N-Channel (Dual)

SWITCHING

45m Ω @ 44A, 10V

3.9V @ 3mA

6800pF @ 100V

190nC @ 10V

20ns

600V

10 ns

47A

20V

600V

METAL-OXIDE SEMICONDUCTOR

超级交界处

ROHS3 Compliant

无铅

N/A

-

400 ns

Chassis Mount, Screw

底座安装

Y3-Li

6

SILICON

2

-40°C~150°C TJ

Bulk

2004

HiPerFET™

yes

活跃

1 (Unlimited)

9

EAR99

UPPER

UNSPECIFIED

未说明

未说明

VMM

R-PUFM-X9

不合格

增强型MOSFET

ISOLATED

2 N-Channel (Dual)

SWITCHING

2.2m Ω @ 500A, 10V

4V @ 30mA

1440nC @ 10V

250ns

100V

250 ns

680A

20V

0.0018Ohm

100V

METAL-OXIDE SEMICONDUCTOR

Standard

ROHS3 Compliant

无铅

N/A

-

30 Weeks

通孔

通孔

i4-Pac™-5

5

SILICON

2

-55°C~150°C TJ

Tube

2008

HiPerFET™

e1

yes

活跃

1 (Unlimited)

5

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

AVALANCHE RATED, UL RECOGNIZED

125W

SINGLE

未说明

未说明

FMM

5

不合格

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

增强型MOSFET

ISOLATED

125W

2 N-Channel (Dual)

SWITCHING

50m Ω @ 25A, 10V

4.5V @ 250μA

4000pF @ 25V

78nC @ 10V

250V

30A

400 mJ

METAL-OXIDE SEMICONDUCTOR

Standard

ROHS3 Compliant

N/A

-

30 Weeks

通孔

通孔

i4-Pac™-5

5

SILICON

2

-55°C~150°C TJ

Tube

2008

HiPerFET™

e1

yes

活跃

1 (Unlimited)

5

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

AVALANCHE RATED, UL RECOGNIZED

125W

SINGLE

未说明

未说明

FMM

5

不合格

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

增强型MOSFET

ISOLATED

125W

2 N-Channel (Dual)

SWITCHING

40m Ω @ 30A, 10V

4.5V @ 250μA

3700pF @ 25V

90nC @ 10V

200V

33A

0.04Ohm

200V

1000 mJ

METAL-OXIDE SEMICONDUCTOR

Standard

ROHS3 Compliant

无铅

N/A

-

28 Weeks

Chassis Mount, Screw

底座安装

Y3-Li

9

SILICON

2

-40°C~150°C TJ

Bulk

2005

HiPerFET™

yes

活跃

1 (Unlimited)

9

UPPER

UNSPECIFIED

VMM

增强型MOSFET

ISOLATED

2 N-Channel (Dual)

SWITCHING

76m Ω @ 65A, 10V

5V @ 30mA

960nC @ 10V

900V

85A

20V

0.076Ohm

METAL-OXIDE SEMICONDUCTOR

Standard

无

ROHS3 Compliant

无铅

N/A

-

表面贴装

9-SMD Power Module

SMPD

58A

--

CoolMOS™

活跃

--

2 N-Channel (Dual) Common Source

--

--

--

--

1200V (1.2kV)

Silicon Carbide (SiC)

N/A

-

EAR99

8541.29.00.95

功率MOSFET

Enhancement

1

650

±30

5

8

100

10

12@10V

12

800@25V

150000

24

28

53

24

-55

150

Compliant

Acquired

Single

N

N/A

-

EAR99

无

无

功率MOSFET

Enhancement

1

200

±20

25

130@15V

81@10V

81

2500@160V

590000

8

5

8

5

-55

175

表面贴装

3.3(Max)

16.51

15.6

6

Case 275

,

未说明

有

DE275-201N25A

IXYS Corporation

Obsolete

IXYS CORP

8.63

Compliant

有

EAR99

FET 通用电源

未说明

compliant

6

不合格

单四源

N

甚高频段

N/A

-

EAR99

无

无

功率MOSFET

Enhancement

1

500

±20

6.5

10

100

50

3000

-55

175

通孔

21.46(Max)

5.3(Max)

16.26(Max)

3

Tab

TO-247AD

TO-247AD, 3 PIN

未说明

有

IXZH10N50LA

IXYS Corporation

Obsolete

IXYS CORP

5.82

TO-247AD

Compliant

有

Obsolete

未说明

compliant

3

不合格

Single

N

甚高频段

N/A

-

EAR99

功率MOSFET

Enhancement

1

650

±30

60

108@10V

108

6300@25V

780000

12

23

63

30

-55

150

Compliant

Acquired

Single

N

N/A

-

无

无

功率MOSFET

Enhancement

1

600

±20

20

350@10V

150@10V

150

4500@25V

300000

40

43

70

20

-55

150

通孔

11.4(Max)

26.66(Max)

39.12(Max)

2

Tab

TO-204AE

Compliant

3

Si

Compliant

Obsolete

3

Single

N

N/A

-

Unknown

Unknown

Compliant

Unconfirmed

N/A

-

8541.29.00.95

无

无

功率MOSFET

HiperFET

Enhancement

1

1000

±20

6

88@10V

88

2600@25V

180000

60

40

100

35

-55

150

通孔

9.14(Max)

25.9(Max)

39.12(Max)

2

Tab

TO-204AA

FLANGE MOUNT, O-MBFM-P2

FLANGE MOUNT

METAL

未说明

150 °C

有

IXFM6N100

ROUND

IXYS Corporation

1

Obsolete

IXYS CORP

5.82

TO-3

6 A

NO

Si

2

SILICON

Compliant

有

Obsolete

雪崩 额定

FET 通用电源

BOTTOM

PIN/PEG

未说明

compliant

3

O-MBFM-P2

不合格

Single

增强型MOSFET

DRAIN

SWITCHING

N-CHANNEL

TO-204

6 A

2 Ω

24 A

1000 V

N

METAL-OXIDE SEMICONDUCTOR

180 W

180 W

N/A

-

EAR99

8541.29.00.95

无

无

功率MOSFET

Enhancement

1

300

±20

40

177@10V

177

4800@25V

300000

45

60

75

20

-55

150

通孔

11.4(Max)

26.66(Max)

39.12(Max)

2

Tab

TO-204AE

IXFM40N30

IXYS

FLANGE MOUNT, O-MBFM-P2

FLANGE MOUNT

METAL

未说明

150 °C

有

ROUND

1

Obsolete

IXYS CORP

5.83

TO-3

40 A

NO

2

SILICON

Compliant

有

Obsolete

雪崩 额定

FET 通用电源

BOTTOM

PIN/PEG

未说明

compliant

3

O-MBFM-P2

不合格

Single

增强型MOSFET

DRAIN

SWITCHING

N-CHANNEL

TO-204

40 A

0.088 Ω

160 A

300 V

N

METAL-OXIDE SEMICONDUCTOR

300 W

300 W

N/A

-

无

无

功率MOSFET

HDMOS

Enhancement

1

1000

±20

12

122@10V

122

4000@25V

300000

32

33

62

21

-55

150

通孔

11.4(Max)

26.66

30.15 + 9.54(Max)

2

Tab

TO-204AA

Compliant

62 ns

Si

Compliant

Obsolete

150 °C

-55 °C

3

Single

Single

300 W

33 ns

12 A

20 V

1 kV

N

1.05 Ω

N/A

-

EAR99

8541.29.00.95

无

无

功率MOSFET

HiperFET

Enhancement

1

600

±20

20

151@10V

151

4500@25V

300000

40

43

70

20

-55

150

通孔

11.4(Max)

26.66(Max)

39.12(Max)

2

Tab

TO-204AE

FLANGE MOUNT, O-MBFM-P2

FLANGE MOUNT

METAL

未说明

150 °C

有

IXFM20N60

ROUND

IXYS Corporation

1

Obsolete

IXYS CORP

5.83

TO-3

20 A

NO

Si

2

SILICON

Compliant

有

Obsolete

雪崩 额定

FET 通用电源

BOTTOM

PIN/PEG

未说明

compliant

3

O-MBFM-P2

不合格

Single

增强型MOSFET

DRAIN

SWITCHING

N-CHANNEL

TO-204

20 A

0.35 Ω

80 A

600 V

N

METAL-OXIDE SEMICONDUCTOR

300 W

300 W

N/A

-

EAR99

8541.29.00.95

无

无

功率MOSFET

Enhancement

1

200

±20

60

38@10V

100@10V

100

2930@25V

320000

7

14

42

15

-55

150

表面贴装

5.1(Max)

14(Max)

16.05(Max)

2

Tab

TO-268-AA

TO-268

Gull-wing

Compliant

Obsolete

3

Single

N

N/A

-

EAR99

8541.29.00.95

无

无

功率MOSFET

HiperFET

Enhancement

1

1000

±20

10

77@10V

77

2700@25V

250000

12

9.8

31

12

-40

150

通孔

21.34(Max)

5.21(Max)

16.13(Max)

3

Tab

SOP

ISOPLUS 247

ISOPLUS247, 3 PIN

IN-LINE

PLASTIC/EPOXY

未说明

150 °C

有

IXFR12N100F

RECTANGULAR

IXYS Corporation

1

Transferred

IXYS CORP

5.71

10 A

NO

3

SILICON

Compliant

e1

有

Unconfirmed

Tin/Silver/Copper (Sn/Ag/Cu)

雪崩 额定

SINGLE

THROUGH-HOLE

未说明

compliant

3

R-PSIP-T3

不合格

Single

增强型MOSFET

ISOLATED

SWITCHING

N-CHANNEL

1.05 Ω

48 A

1000 V

N

1000 mJ

METAL-OXIDE SEMICONDUCTOR

N/A

-

Unknown

Unknown

Compliant

Unconfirmed

N/A

-

Unknown

Unknown

Unconfirmed

N/A

-

无

无

功率MOSFET

TrenchP

Enhancement

1

150

±15

150

44

175@10V

175

13400@25V

298000

17

42

50

25

-55

150

表面贴装

4.83(Max)

9.65(Max)

10.41(Max)

2

Tab

D2PAK

Compliant

3

Single

P

N/A

-

Acquired

N/A

-

EAR99

无

无

功率MOSFET

Enhancement

1

100

±20

9

160@15V

22@10V

22

700@70V

200000

4

4

4

4

-55

175

表面贴装

3.18

13.72

12.7

6

D1, 6 PIN

有

DE150-101N09A

IXYS Corporation

Obsolete

IXYS CORP

5.8

Compliant

有

Unconfirmed

EAR99

compliant

6

单四源

N