N/A

-

10 Weeks

Tin

表面贴装

表面贴装

8-LSSOP (0.173, 4.40mm Width)

8

Non-Volatile

-40°C~85°C TA

Tape & Reel (TR)

2013

活跃

1 (Unlimited)

8

1.6V~5.5V

DUAL

未说明

1

2.5V

0.65mm

未说明

BR24G08

5.5V

1.6V

2-Wire, I2C, Serial

8Kb 1K x 8

SYNCHRONOUS

400kHz

900 ns

EEPROM

I2C

1

5ms

8 kb

I2C

5ms

1.1mm

4.4mm

3mm

ROHS3 Compliant

N/A

-

11 Weeks

Automotive grade

表面贴装

8-SOIC (0.173, 4.40mm Width)

YES

8

Non-Volatile

-40°C~105°C TA

Cut Tape (CT)

2013

Automotive, AEC-Q100

yes

活跃

1 (Unlimited)

8

EAR99

2.5V~5.5V

DUAL

未说明

1

1.27mm

未说明

8

不合格

5.5V

3/5V

2.5V

8Kb 1K x 8

SYNCHRONOUS

400kHz

EEPROM

I2C

8

5ms

0.000002A

4096 bit

SERIAL

I2C

100000 Write/Erase Cycles

5ms

40

HARDWARE

1010DMMR

5mm

4.4mm

Unknown

ROHS3 Compliant

N/A

-

7 Weeks

表面贴装

8-WDFN Exposed Pad

8

Non-Volatile

-40°C~105°C TA

Tape & Reel (TR)

2016

SST26 SQI®

e3

活跃

3 (168 Hours)

Matte Tin (Sn) - annealed

2.7V~3.6V

SST26VF032

SPI, Serial

32Mb 4M x 8

104MHz

FLASH

SPI - Quad I/O

1.5ms

32 Mb

SPI

HARDWARE/SOFTWARE

256B

ROHS3 Compliant

N/A

-

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

18 Bit

1.9 V

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Commercial grade

SRAM

BGA-165

250 MHz

0 to 70 °C

Tray

GS8182D18BGD

SigmaQuad-II

Memory & Data Storage

165

18 Mbit

2

420 mA

Pipelined

1 M x 18

18 Bit

18 Mbit

Commercial

SRAM

N/A

-

10 Weeks

150 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

QFP,

FLATPACK

512000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS816136DGT-150

524288 words

2.5 V

QFP

RECTANGULAR

活跃

GSI TECHNOLOGY

QFP

5.26

SRAM

TQFP-100

YES

100

有

Tray

GS816136DGT

3A991.B.2.B

Pipeline/Flow Through

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

compliant

100

R-PQFP-G100

2.7 V

COMMERCIAL

2.3 V

18 Mbit

SYNCHRONOUS

180 mA, 190 mA

7.5 ns

512 k x 36

36

18874368 bit

PARALLEL

缓存SRAM

SRAM

N/A

-

8 Weeks

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

7.5 ns

85 °C

有

GS8321E36AGD-150

150 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.31

BGA

Commercial grade

SRAM

BGA-165

YES

165

133@Flow-Through/150@Pipelined MHz

0 to 85 °C

Tray

GS8321E36AGD

e1

有

3A991.B.2.B

DCD Pipeline/Flow Through

锡银铜

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

165

R-PBGA-B165

不合格

2.7 V

2.5/3.3 V

OTHER

2.3 V

36 Mbit

4

SYNCHRONOUS

190 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

SRAM

15 mm

13 mm

N/A

-

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

SRAM

BGA-165

181.8@Flow-Through/250@Pipelined MHz

0 to 70 °C

Tray

GS8161E36DD

DCD Pipeline/Flow Through

Memory & Data Storage

165

18 Mbit

4

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

18 Mbit

Commercial

SRAM

N/A

-

250 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

SRAM

TQFP-100

有

Tray

GS8161E32DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

230 mA, 250 mA

5.5 ns

512 k x 32

SRAM

N/A

-

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

200 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

BGA-165

153.8@Flow-Through/200@Pipelined MHz

0 to 85 °C

GS8321E36AD

165

36 Mbit

4

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

36 Mbit

Commercial

N/A

-

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

BGA-119

250 MHz

GS882Z18CGB

9 Mbit

145 mA, 180 mA

5.5 ns

512 k x 18

N/A

-

250 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

SRAM

TQFP-100

有

Tray

GS8161E32DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

250 mA, 270 mA

5.5 ns

512 k x 32

SRAM

N/A

-

10 Weeks

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA,

网格排列

512000

PLASTIC/EPOXY

-40 °C

未说明

4.2 ns

85 °C

无

GS816236DB-375I

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.25

BGA

Industrial grade

SRAM

BGA-119

YES

119

FBGA

-40 to 100 °C

Tray

GS816236DB

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

119

R-PBGA-B119

2.7 V

INDUSTRIAL

2.3 V

18 Mbit

4

SYNCHRONOUS

290 mA, 370 mA

4.2 ns

Flow-Through/Pipelined

512 k x 36

1.99 mm

36

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

SRAM

22 mm

14 mm

N/A

-

小概要

256

PLASTIC/EPOXY

SOP8,.3

40

70 °C

有

93LC56A/SM

2 MHz

256 words

3 V

SOP

RECTANGULAR

Microchip Technology Inc

活跃

MICROCHIP TECHNOLOGY INC

5.17

SOIC

YES

8

SOP, SOP8,.3

e3

有

EAR99

Matte Tin (Sn)

1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS

8542.32.00.51

EEPROMs

CMOS

DUAL

鸥翼

260

1

1.27 mm

compliant

8

R-PDSO-G8

不合格

6 V

3/5 V

COMMERCIAL

2.5 V

SYNCHRONOUS

0.0015 mA

256X8

2.03 mm

8

0.000001 A

2048 bit

SERIAL

EEPROM

MICROWIRE

1000000 Write/Erase Cycles

6 ms

200

SOFTWARE

5.28 mm

5.2 mm

N/A

-

10 Weeks

Automotive grade

表面贴装

48-TFBGA

YES

48

Volatile

-40°C~125°C TA

Tray

活跃

3 (168 Hours)

48

2.4V~3.6V

BOTTOM

1

3V

0.75mm

48

3.6V

2.5/3.3V

2.4V

4Mb 256K x 16

1

SRAM

Parallel

3-STATE

16

10ns

18b

4 Mb

COMMON

2V

8mm

无

ROHS3 Compliant

N/A

-

6 Weeks

表面贴装

28-SOIC (0.330, 8.38mm Width)

YES

28

Volatile

-40°C~85°C TA

Tube

2009

yes

活跃

3 (168 Hours)

28

EAR99

4.5V~5.5V

DUAL

260

1

5V

40

28

不合格

5V

5V

256Kb 32K x 8

1

0.07mA

SRAM

Parallel

32KX8

3-STATE

8

70ns

15b

256 kb

0.000006A

14MHz

70 ns

COMMON

2V

YES

3.048mm

ROHS3 Compliant

N/A

-

8 Weeks

表面贴装

32-TFSOP (0.724, 18.40mm Width)

YES

32

Volatile

0°C~70°C TA

Tape & Reel (TR)

2002

e3/e6

yes

活跃

3 (168 Hours)

32

PURE MATTE TIN/TIN BISMUTH

4.5V~5.5V

DUAL

245

1

5V

1.27mm

40

32

5.5V

4.5V

1Mb 128K x 8

SRAM

Parallel

128KX8

8

15ns

1048576 bit

15 ns

3.683mm

20.995mm

7.62mm

ROHS3 Compliant

N/A

-

6 Weeks

Automotive grade

表面贴装

8-SOIC (0.154, 3.90mm Width)

YES

Non-Volatile

-40°C~125°C TA

Tape & Reel (TR)

Automotive, AEC-Q100, F-RAM™

活跃

3 (168 Hours)

8

EAR99

8542.32.00.71

2.7V~3.65V

DUAL

未说明

1

3.3V

1.27mm

未说明

R-PDSO-G8

3.6V

3V

16Kb 2K x 8

SYNCHRONOUS

16MHz

FRAM

SPI

2KX8

8

16384 bit

1.727mm

4.889mm

3.8985mm

ROHS3 Compliant

N/A

-

表面贴装

36-BSOJ (0.400, 10.16mm Width)

YES

36

Volatile

0°C~70°C TA

Tube

2000

e0

no

Obsolete

3 (168 Hours)

36

3A991.B.2.A

Tin/Lead (Sn/Pb)

8542.32.00.41

4.5V~5.5V

DUAL

225

1

5V

1.27mm

not_compliant

20GHz

30

CY7C1049

36

不合格

5.5V

5V

4.5V

4Mb 512K x 8

SRAM

Parallel

512KX8

3-STATE

8

20ns

0.008A

4194304 bit

20 ns

COMMON

4.5V

3.683mm

23.495mm

10.16mm

Non-RoHS Compliant

含铅

N/A

-

表面贴装

40-TFSOP (0.724, 18.40mm Width)

40

40-TSOP

Non-Volatile

0°C~70°C TC

Tray

1997

Obsolete

3 (168 Hours)

70°C

0°C

4.5V~5.5V

120GHz

AT49F008

Parallel

5.5V

4.5V

8Mb 1M x 8 512K x 16

120ns

FLASH

Parallel

8b

50μs

Non-RoHS Compliant

含铅

N/A

-

150 MHz

Parallel

2.3 V

0 C

+ 70 C

SMD/SMT

SDR

有

84

SyncBurst

3.6 V

BGA,

网格排列

128000

PLASTIC/EPOXY

未说明

70 °C

有

GS84032CGB-150

131072 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.18

BGA-119

YES

119

Details

Tray

GS84032CGB

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

2.7 V

COMMERCIAL

2.3 V

4 Mbit

SYNCHRONOUS

130 mA, 140 mA

7.5 ns

128 k x 32

1.99 mm

32

4194304 bit

PARALLEL

缓存SRAM

22 mm

14 mm

N/A

-

Parallel

1.7 V

- 40 C

+ 85 C

SMD/SMT

QDR-II

有

15

SigmaQuad-II

1.9 V

BGA-165

400 MHz

Tray

GS8672Q18BE

SigmaQuad-II

72 Mbit

1.38 A

4 M x 18

72

N/A

-

250 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

SRAM

TQFP-100

有

Tray

GS816136DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

230 mA, 250 mA

5.5 ns

512 k x 36

SRAM

N/A

-

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

SRAM

BGA-165

有

Tray

GS8672D36BE

SigmaQuad-II

Memory & Data Storage

72 Mbit

1.88 A

2 M x 36

72

SRAM

N/A

-

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

SRAM

BGA-165

有

Tray

GS8672D18BGE

SigmaQuad-II

Memory & Data Storage

72 Mbit

1.21 A

4 M x 18

72

SRAM

N/A

-

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

SRAM

TQFP-100

153.8@Flow-Through/200@Pipelined MHz

-40 to 85 °C

Tray

GS880E18CGT

DCD

Memory & Data Storage

100

9 Mbit

2

150 mA, 175 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

9 Mbit

Industrial

SRAM