制造商是'Toshiba'
Toshiba 晶体管 - 双极性晶体管（BJT）- 阵列
(75)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 晶体管元件材料 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | 零件状态 | 湿度敏感性等级(MSL) | 最高工作温度 | 最小工作温度 | 子类别 | 最大功率耗散 | 技术 | 端子位置 | 终端形式 | Reach合规守则 | 额定电流 | 频率 | JESD-30代码 | 输出电压 | 极性 | 配置 | 元素配置 | 功率耗散 | 功率 - 最大 | 晶体管应用 | 增益带宽积 | 极性/通道类型 | 产品类别 | 晶体管类型 | 集电极发射器电压(VCEO) | 最大集电极电流 | 最小直流增益（hFE）@ Ic, Vce | 最大集极截止电流 | 不同 Ib, Ic 时 Vce 饱和度（最大值） | 电压 - 集射极击穿（最大值） | 转换频率 | 输入电容 | 最大击穿电压 | 频率转换 | 集电极基极电压(VCBO) | 发射极基极电压 (VEBO) | 集电极电流-最大值(IC) | 最小直流增益（hFE） | 连续集电极电流 | 集电极-发射器电压-最大值 | VCEsat-最大值 | 产品类别 | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||||||||||||||||||||
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 | HN4B102J(TE85L,F) | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 活跃 | 1.8A, 2A | 7 V | 1.1 W | NPN, PNP | + 150 C | 200 | - 55 C | 3000 | SMD/SMT | Toshiba | Toshiba | 8 A | 500 | Details | 30 V | SMALL OUTLINE, R-PDSO-G5 | 小概要 | PLASTIC/EPOXY | 150 °C | HN4B102J(TE85L,F) | RECTANGULAR | 2 | 活跃 | Silicon PNP / NPN Epitaxial Type Transistor | TOSHIBA CORP | 5.76 | Bipolar Transistors - BJT | 表面贴装 | SC-74A, SOT-753 | YES | SMV | 5 | SILICON | 东芝半导体与存储 | Tape & Reel (TR) | 150°C (TJ) | MouseReel | - | Transistors | DUAL | 鸥翼 | unknown | R-PDSO-G5 | Dual | 750mW | SWITCHING | NPN和PNP | NPN, PNP | 200 @ 200mA, 2V | 100nA (ICBO) | 140mV @ 20mA, 600mA, 200mV @ 20mA, 600mA | 30V | - | 60 V, 30 V | 2 A | 40 | - 1.8 A, 2 A | 30 V | 0.14 V | BJTs - Bipolar Transistors | ||||||||||||||||||||||||||||||||||||
 | HN4A06J(TE85L,F) | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 200 | 表面贴装 | 表面贴装 | SC-74A, SOT-753 | 120V | 150°C TJ | Cut Tape (CT) | 2009 | Discontinued | 1 (Unlimited) | 300mW | PNP | Dual | 300mW | 100MHz | 2 PNP (Dual) Matched Pair, Common Emitter | 300mV | 100mA | 200 @ 2mA 6V | 100nA ICBO | 300mV @ 1mA, 10mA | 120V | -120V | -5V | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | HN1C01FU-GR,LF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 50V | 125°C TJ | Cut Tape (CT) | 2014 | Discontinued | 1 (Unlimited) | 200mW | 200mW | 2 NPN (Dual) | 250mV | 150mA | 200 @ 2mA 6V | 100nA ICBO | 250mV @ 10mA, 100mA | 50V | 80MHz | 60V | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | HN1A01FE-Y,LF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 150mA | 120 | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | ES6 | 50V | 150°C TJ | Cut Tape (CT) | 2014 | 活跃 | 1 (Unlimited) | 150°C | -55°C | 100mW | PNP | 100mW | 80MHz | 2 PNP (Dual) | 300mV | 150mA | 120 @ 2mA 6V | 100nA ICBO | 300mV @ 10mA, 100mA | 50V | 50V | 80MHz | -50V | -5V | -150mA | 550μm | 1.6mm | 1.2mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | HN1C01FYTE85LF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 120 | 表面贴装 | 表面贴装 | SC-74, SOT-457 | 50V | 125°C TJ | Cut Tape (CT) | 2009 | 活跃 | 1 (Unlimited) | 300mW | NPN | Dual | 300mW | 80MHz | 2 NPN (Dual) | 250mV | 150mA | 120 @ 2mA 6V | 100nA ICBO | 250mV @ 10mA, 100mA | 50V | 60V | 5V | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1618-GR(TE85L,F | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 200 | 表面贴装 | 表面贴装 | SC-74A, SOT-753 | 50V | 125°C TJ | Cut Tape (CT) | 2014 | Discontinued | 1 (Unlimited) | 300mW | PNP | Dual | 300mW | 80MHz | 2 PNP (Dual) Matched Pair, Common Emitter | 300mV | 150mA | 200 @ 2mA 6V | 100nA ICBO | 300mV @ 10mA, 100mA | 80MHz | 50V | -50V | -5V | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 2SA1873-Y(TE85L,F) | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 120 | 表面贴装 | 表面贴装 | 5-TSSOP, SC-70-5, SOT-353 | 50V | 125°C TJ | Cut Tape (CT) | 2009 | 活跃 | 1 (Unlimited) | 200mW | unknown | PNP | Dual | 200mW | 80MHz | 2 PNP (Dual) Matched Pair, Common Emitter | 300mV | 150mA | 120 @ 2mA 6V | 100nA ICBO | 300mV @ 10mA, 100mA | 80MHz | 50V | -50V | -5V | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1A01FU-GR,LF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 50V | 125°C TJ | Cut Tape (CT) | 2014 | Discontinued | 1 (Unlimited) | 200mW | unknown | 200mW | 2 PNP (Dual) | 300mV | 150mA | 200 @ 2mA 6V | 100nA ICBO | 300mV @ 10mA, 100mA | 50V | 80MHz | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1A01FU-Y,LF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 120 | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 50V | 125°C TJ | Cut Tape (CT) | 2014 | 活跃 | 1 (Unlimited) | 200mW | PNP | 200mW | 80MHz | 2 PNP (Dual) | 300mV | 150mA | 120 @ 2mA 6V | 100nA ICBO | 300mV @ 10mA, 100mA | 50V | -50V | -5V | -150mA | 900μm | 2mm | 1.25mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B01F-GR(TE85L,F | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 2 | 120 | 表面贴装 | 表面贴装 | SC-74, SOT-457 | 6 | 50V | 125°C TJ | Cut Tape (CT) | 2014 | Discontinued | 1 (Unlimited) | 300mW | 150MHz | NPN, PNP | Dual | 300mW | 80MHz | NPN, PNP | 300mV | 150mA | 200 @ 2mA 6V | 100nA ICBO | 300mV @ 10mA, 100mA | 50V | 120MHz | 50V | 5V | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1A01F-Y(TE85L,F) | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 2 | 120 | 表面贴装 | 表面贴装 | SC-74, SOT-457 | 6 | 50V | 125°C TJ | Tape & Reel (TR) | 2014 | 活跃 | 1 (Unlimited) | 300mW | 80MHz | PNP | Dual | 300mW | 80MHz | 2 PNP (Dual) | 50V | 150mA | 120 @ 2mA 6V | 100nA ICBO | 300mV @ 10mA, 100mA | 50V | 50V | 5V | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ULN2004A | Toshiba | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Non-Compliant | 16 | 50 V | 500 mA | 50 V | NPN | 15 pF | 无SVHC | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01FE-GR,LXHF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 150mA | AEC-Q200 | 5 V | 100 mW | NPN | + 150 C | 120 at 2 mA, 6 V | 4000 | SMD/SMT | 80 MHz | HN1C01FE-GR,LXHF(B | Toshiba | Toshiba | 400 at 2 mA, 6 V | Details | 50 V | Bipolar Transistors - BJT | 表面贴装 | SOT-563, SOT-666 | ES6 | 东芝半导体与存储 | 活跃 | 150°C (TJ) | MouseReel | Automotive, AEC-Q101 | Transistors | Si | Single | 100mW | 2 NPN (Dual) | 200 @ 2mA, 6V | 100nA (ICBO) | 250mV @ 10mA, 100mA | 50V | 80MHz | 60 V | 150 mA | BJTs - Bipolar Transistors | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1A01FE-Y,LXHF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 150mA | AEC-Q200 | 5 V | 100 mW | PNP | + 150 C | 120 at -2 mA, - 6 V | 4000 | SMD/SMT | 80 MHz | HN1A01FE-Y,LXHF(B | Toshiba | Toshiba | 400 at -2 mA, - 6 V | Details | 50 V | Bipolar Transistors - BJT | 表面贴装 | SOT-563, SOT-666 | ES6 | 东芝半导体与存储 | 活跃 | 150°C (TJ) | MouseReel | Automotive, AEC-Q101 | Transistors | Si | Dual | 100mW | 2 PNP (Dual) | 120 @ 2mA, 6V | 100nA (ICBO) | 300mV @ 10mA, 100mA | 50V | 80MHz | 50 V | 150 mA | BJTs - Bipolar Transistors | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01FE-Y,LXHF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 150mA | AEC-Q200 | 5 V | 100 mW | NPN | + 150 C | 120 at 2 mA, 6 V | 4000 | SMD/SMT | 80 MHz | HN1C01FE-Y,LXHF(B | Toshiba | Toshiba | 400 at 2 mA, 6 V | Details | 50 V | Bipolar Transistors - BJT | 表面贴装 | SOT-563, SOT-666 | ES6 | 东芝半导体与存储 | 活跃 | 150°C (TJ) | MouseReel | Automotive, AEC-Q101 | Transistors | Si | Single | 100mW | 2 NPN (Dual) | 120 @ 2mA, 6V | 100nA (ICBO) | 250mV @ 10mA, 100mA | 50V | 80MHz | 60 V | 150 mA | BJTs - Bipolar Transistors | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B04FE-GR,LXHF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 150mA | AEC-Q200 | 5 V | 100 mW | NPN, PNP | + 150 C | 120 at 2 mA, 6 V | 4000 | SMD/SMT | 80 MHz | HN1B04FE-GR,LXHF(B | Toshiba | Toshiba | 400 at 2 mA, 6 V | Details | 50 V | Bipolar Transistors - BJT | 表面贴装 | SOT-563, SOT-666 | ES6 | 东芝半导体与存储 | 活跃 | 150°C (TJ) | MouseReel | Transistors | Si | Dual | 100mW | NPN, PNP | 200 @ 2mA, 6V | 100nA (ICBO) | 250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA | 50V | 80MHz | 50 V | 150 mA | BJTs - Bipolar Transistors | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B04FU-Y,LXHF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 150mA | AEC-Q200 | 5 V, 60 V | 200 mW | NPN, PNP | 120 at 2 mA, 6 V | 3000 | SMD/SMT | 120 MHz, 150 MHz | HN1B04FU-Y,LXHF(B | Toshiba | Toshiba | 400 at 2 mA, 6 V | Details | 50 V | Bipolar Transistors - BJT | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | US6 | 东芝半导体与存储 | 活跃 | - | MouseReel | Transistors | Si | Dual | 200mW | NPN, PNP | 120 @ 2mA, 6V | 100nA (ICBO) | 250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA | 50V | 150MHz, 120MHz | 50 V | 150 mA | BJTs - Bipolar Transistors | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01FU-Y,LXHF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 150mA | AEC-Q200 | 5 V | 200 mW | NPN | + 125 C | 120 at 2 mA, 6 V | 3000 | SMD/SMT | 80 MHz | HN1C01FU-Y,LXHF(B | Toshiba | Toshiba | 400 at 2 mA, 6 V | Details | 50 V | Bipolar Transistors - BJT | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | US6 | 东芝半导体与存储 | 活跃 | - | MouseReel | - | Transistors | Si | Dual | 200mW | 2 NPN (Dual) | 120 @ 2mA, 6V | 100nA (ICBO) | 250mV @ 10mA, 100mA | 50V | 80MHz | 60 V | 150 mA | BJTs - Bipolar Transistors | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B04FU-GR,LXHF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 150mA | AEC-Q200 | 5 V, 60 V | 200 mW | NPN, PNP | 120 at 2 mA, 6 V | 3000 | SMD/SMT | 120 MHz, 150 MHz | HN1B04FU-GR,LXHF(B | Toshiba | Toshiba | 400 at 2 mA, 6 V | Details | 50 V | Bipolar Transistors - BJT | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | US6 | 东芝半导体与存储 | 活跃 | - | MouseReel | Transistors | Si | Dual | 200mW | NPN, PNP | 200 @ 2mA, 6V | 100nA (ICBO) | 250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA | 50V | 150MHz, 120MHz | 50 V | 150 mA | BJTs - Bipolar Transistors | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1C01FU-GR,LXHF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 150mA | AEC-Q200 | 5 V | 200 mW | NPN | + 125 C | 120 at 2 mA, 6 V | 3000 | SMD/SMT | 80 MHz | HN1C01FU-GR,LXHF(B | Toshiba | Toshiba | 400 at 2 mA, 6 V | Details | 50 V | Bipolar Transistors - BJT | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | US6 | 东芝半导体与存储 | 活跃 | - | MouseReel | - | Transistors | Si | Dual | 200mW | 2 NPN (Dual) | 200 @ 2mA, 6V | 100nA (ICBO) | 250mV @ 10mA, 100mA | 50V | 80MHz | 60 V | 150 mA | BJTs - Bipolar Transistors | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B01FU-Y,LXHF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 150mA | AEC-Q200 | 5 V | 200 mW | NPN, PNP | + 125 C | 120 at2 mA,6 V | 3000 | SMD/SMT | 120 MHz, 150 MHz | HN1B01FU-Y,LXHF(B | Toshiba | Toshiba | 400 at2 mA,6 V | Details | 50 V | Bipolar Transistors - BJT | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | US6 | 东芝半导体与存储 | 活跃 | - | MouseReel | Automotive, AEC-Q101 | Transistors | Si | Dual | 200mW | NPN, PNP | 120 @ 2mA, 6V | 100nA (ICBO) | 300mV @ 10mA, 100mA, 250mV @ 10mA, 100mA | 50V | 120MHz, 150MHz | 60 V | 150 mA | BJTs - Bipolar Transistors | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1A01FU-Y,LXHF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 150mA | AEC-Q200 | 5 V | 200 mW | PNP | + 125 C | 120 at - 2 mA, - 6 V | 3000 | SMD/SMT | 80 MHz | HN1A01FU-Y,LXHF(B | Toshiba | Toshiba | 400 at - 2 mA, - 6 V | Details | 50 V | Bipolar Transistors - BJT | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | US6 | 东芝半导体与存储 | 活跃 | - | MouseReel | Transistors | Si | Dual | 200mW | 2 PNP (Dual) | 120 @ 2mA, 6V | 100nA (ICBO) | 300mV @ 10mA, 100mA | 50V | 80MHz | 50 V | 150 mA | BJTs - Bipolar Transistors | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B04FE-Y,LXHF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 150mA | AEC-Q200 | 5 V | 100 mW | NPN, PNP | + 150 C | 120 at 2 mA, 6 V | 4000 | SMD/SMT | 80 MHz | HN1B04FE-Y,LXHF(B | Toshiba | Toshiba | 400 at 2 mA, 6 V | Details | 50 V | Bipolar Transistors - BJT | 表面贴装 | SOT-563, SOT-666 | ES6 | 东芝半导体与存储 | 活跃 | 150°C (TJ) | MouseReel | Transistors | Si | Dual | 100mW | NPN, PNP | 120 @ 2mA, 6V | 100nA (ICBO) | 250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA | 50V | 80MHz | 50 V | 150 mA | BJTs - Bipolar Transistors | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B01FU-GR,LXHF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 150mA | 5 V | 200 mW | NPN, PNP | + 125 C | 120 at 2 mA, 6 V | SMD/SMT | 120 MHz, 150 MHz | 50 V | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | US6 | 东芝半导体与存储 | 活跃 | - | Automotive, AEC-Q101 | Si | Dual | 200mW | NPN, PNP | 200 @ 2mA, 6V | 100nA (ICBO) | 300mV @ 10mA, 100mA, 250mV @ 10mA, 100mA | 50V | 120MHz, 150MHz | 60 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1A01FE-GR,LXHF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 150mA | AEC-Q200 | 5 V | 100 mW | PNP | + 150 C | 120 at -2 mA, - 6 V | 4000 | SMD/SMT | 80 MHz | HN1A01FE-GR,LXHF(B | Toshiba | Toshiba | 400 at -2 mA, - 6 V | Details | 50 V | Bipolar Transistors - BJT | 表面贴装 | SOT-563, SOT-666 | ES6 | 东芝半导体与存储 | 活跃 | 150°C (TJ) | MouseReel | Transistors | Si | Dual | 100mW | 2 PNP (Dual) | 200 @ 2mA, 6V | 100nA (ICBO) | 300mV @ 10mA, 100mA | 50V | 80MHz | 50 V | 150 mA | BJTs - Bipolar Transistors |