制造商是'Nexperia'
Nexperia 晶体管 - FET，MOSFET - 阵列
(188)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 时间@峰值回流温度-最大值(s) | 引脚数量 | 参考标准 | JESD-30代码 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)（最大值） | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间（典型值） | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级（Eas） | 场效应管技术 | 最大耗散功率(Abs) | 场效应管特性 | 漏源电阻 | 最大rds | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
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 | 2N7002BKS,115 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 2 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | SILICON | 300mA | 150°C TJ | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 逻辑电平兼容 | 鸥翼 | 未说明 | 未说明 | 6 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 295mW | 2 N-Channel (Dual) | SWITCHING | 1.6 Ω @ 500mA, 10V | 2.1V @ 250μA | 50pF @ 10V | 0.6nC @ 4.5V | 60V | 0.3A | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||
| BSS138PS,115 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 9 ns | Tin | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | 6 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | 1.6Ohm | 逻辑电平兼容 | 420mW | 鸥翼 | 260 | 30 | 6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 280mW | 2 ns | 420mW | 2 N-Channel (Dual) | SWITCHING | 1.6 Ω @ 300mA, 10V | 1.5V @ 250μA | 50pF @ 10V | 0.8nC @ 4.5V | 3ns | 4 ns | 320mA | 1.2V | 20V | 60V | 0.32A | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||
| PMGD290UCEAX | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 80 ns | Tin | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 725mA 500mA | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | 活跃 | 1 (Unlimited) | 280mW | 6 | 2 | Dual | 18 ns | N and P-Channel | 380m Ω @ 500mA, 4.5V | 1.3V @ 250μA | 83pF @ 10V | 0.68nC @ 4.5V | 30ns | 72 ns | 500mA | 8V | 20V | 逻辑电平门 | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
 | 2N7002PV,115 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 10 ns | Tin | 表面贴装 | SOT-563, SOT-666 | YES | 6 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | 2010 | e3 | 活跃 | 1 (Unlimited) | 6 | 逻辑电平兼容 | 330mW | FLAT | 6 | 增强型MOSFET | 390mW | 3 ns | 330mW | 2 N-Channel (Dual) | SWITCHING | 1.6 Ω @ 500mA, 10V | 2.4V @ 250μA | 50pF @ 10V | 0.8nC @ 4.5V | 4ns | 5 ns | 350mA | 20V | 60V | 0.35A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
| PMGD780SN,115 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | 6 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 8541.29.00.75 | 鸥翼 | 260 | 30 | 6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 410mW | 410mW | 2 N-Channel (Dual) | SWITCHING | 920m Ω @ 300mA, 10V | 2.5V @ 250μA | 23pF @ 30V | 1.05nC @ 10V | 60V | 490mA | 0.49A | 0.92Ohm | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||
| BSS138BKS,115 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 2 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | SILICON | 320mA | -55°C~150°C TJ | Tape & Reel (TR) | 2002 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | 逻辑电平兼容 | 鸥翼 | 6 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 445mW | 2 N-Channel (Dual) | SWITCHING | 1.6 Ω @ 320mA, 10V | 1.6V @ 250μA | 56pF @ 10V | 0.7nC @ 4.5V | 60V | 0.32A | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
 | PMDXB600UNEZ | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 19 ns | 表面贴装 | 6-XFDFN Exposed Pad | YES | 6 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | TrenchFET® | e3 | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | 265mW | 6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 5.6 ns | 265mW | 2 N-Channel (Dual) | SWITCHING | 620m Ω @ 600mA, 4.5V | 950mV @ 250μA | 21.3pF @ 10V | 0.7nC @ 4.5V | 9.2ns | 51 ns | 600mA | 8V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
| NX1029X,115 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 2 | 48 ns | 表面贴装 | SOT-563, SOT-666 | 6 | 330mA 170mA | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | Tin (Sn) | 500mW | 6 | 500mW | N and P-Channel | 7.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 36pF @ 25V | 0.35nC @ 5V | 11ns | 60V 50V | 25 ns | 170mA | 20V | -50V | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
 | BUK9K6R8-40EX | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 表面贴装 | SOT-1205, 8-LFPAK56 | 8 | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | 活跃 | 1 (Unlimited) | 6 | 64W | 鸥翼 | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 64W | 2 N-Channel (Dual) | SWITCHING | 6.1m Ω @ 10A, 10V | 2.1V @ 1mA | 3000pF @ 25V | 22.2nC @ 5V | 40V | 40A | 0.0072Ohm | 265A | 40V | 125 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||
| BSS84AKS,115 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 2 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | 6 | SILICON | 160mA | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | 逻辑电平兼容 | 鸥翼 | 260 | 30 | 6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 445mW | 2 P-Channel (Dual) | SWITCHING | 7.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 36pF @ 25V | 0.35nC @ 5V | 50V | 8.5Ohm | 50V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||
| 2N7002PS,115 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 10 ns | Tin | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | 6 | SILICON | 2 | 150°C TJ | Cut Tape (CT) | 2010 | e3 | 活跃 | 1 (Unlimited) | 6 | 1.6Ohm | 逻辑电平兼容 | 420mW | 鸥翼 | 6 | Dual | 增强型MOSFET | 320mW | 3 ns | 420mW | 2 N-Channel (Dual) | SWITCHING | 1.6 Ω @ 500mA, 10V | 2.4V @ 250μA | 50pF @ 10V | 0.8nC @ 4.5V | 4ns | 4 ns | 320mA | 20V | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
| BUK7K8R7-40EX | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 表面贴装 | SOT-1205, 8-LFPAK56 | 8 | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | 活跃 | 1 (Unlimited) | 6 | 53W | 鸥翼 | 未说明 | 未说明 | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 53W | 2 N-Channel (Dual) | SWITCHING | 8.5m Ω @ 15A, 10V | 4V @ 1mA | 1439pF @ 25V | 21.8nC @ 10V | 40V | 30A | 225A | 40V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||
| PMCXB900UEZ | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 2 | 表面贴装 | 6-XFDFN Exposed Pad | YES | 6 | SILICON | 600mA 500mA | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | TrenchFET® | 活跃 | 1 (Unlimited) | 6 | 265mW | DUAL | 6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N and P-Channel Complementary | SWITCHING | 620m Ω @ 600mA, 4.5V | 950mV @ 250μA | 21.3pF @ 10V | 0.7nC @ 4.5V | 20V | N-CHANNEL AND P-CHANNEL | 500mA | 8V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
| BSS84AKV,115 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 48 ns | Tin | 表面贴装 | SOT-563, SOT-666 | YES | 6 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | 逻辑电平兼容 | 500mW | FLAT | 6 | 增强型MOSFET | 330mW | 13 ns | 2 P-Channel (Dual) | SWITCHING | 7.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 36pF @ 25V | 0.35nC @ 5V | 11ns | 50V | 25 ns | 170mA | 20V | -50V | 0.17A | 8.5Ohm | -50V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||
| NX3020NAKS,115 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 34 ns | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | 6 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | 375mW | 鸥翼 | 6 | 2 | Dual | 增强型MOSFET | 375mW | 5 ns | 2 N-Channel (Dual) | SWITCHING | 4.5 Ω @ 100mA, 10V | 1.5V @ 250μA | 13pF @ 10V | 0.44nC @ 4.5V | 5ns | 17 ns | 180mA | 20V | 30V | 0.18A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
| BUK9K25-40EX | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 表面贴装 | SOT-1205, 8-LFPAK56 | 8 | LFPAK56D | 18.2A | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | TrenchMOS™ | 活跃 | 1 (Unlimited) | 175°C | -55°C | 32W | 32W | 2 N-Channel (Dual) | 24mOhm @ 5A, 10V | 2.1V @ 1mA | 701pF @ 25V | 6.3nC @ 5V | 40V | 18.2A | 701pF | 逻辑电平门 | 19mOhm | 24 mΩ | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
| NX7002AKS,115 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 20 ns | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 6-TSSOP | 170mA | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | 活跃 | 1 (Unlimited) | 150°C | -55°C | 220mW | 2 | Dual | 6 ns | 220mW | 2 N-Channel (Dual) | 4.5Ohm @ 100mA, 10V | 2.1V @ 250μA | 17pF @ 10V | 0.43nC @ 4.5V | 7ns | 60V | 14 ns | 170mA | 1.6V | 60V | 60V | 17pF | 逻辑电平门 | 3Ohm | 4.5 Ω | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||
| BUK7K25-40E,115 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 8.3 ns | 表面贴装 | SOT-1205, 8-LFPAK56 | YES | 8 | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | 雪崩 额定 | 32W | 鸥翼 | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | 2 | Dual | 增强型MOSFET | 32W | DRAIN | 4.4 ns | 2 N-Channel (Dual) | SWITCHING | 25m Ω @ 5A, 10V | 4V @ 1mA | 525pF @ 25V | 7.9nC @ 10V | 4.5ns | 5.2 ns | 27A | 20V | 40V | 40V | 107A | 10 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||
| BUK9K17-60EX | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 表面贴装 | SOT-1205, 8-LFPAK56 | 8 | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2014 | 活跃 | 1 (Unlimited) | 6 | 53W | 鸥翼 | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 53W | 2 N-Channel (Dual) | SWITCHING | 15.6m Ω @ 10A, 10V | 2.1V @ 1mA | 2223pF @ 25V | 16.5nC @ 5V | 60V | 26A | 0.017Ohm | 60V | 64 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
 | PMDPB58UPE,115 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 41 ns | 表面贴装 | 6-UDFN Exposed Pad | YES | 6 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | 515mW | 6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 7 ns | 2 P-Channel (Dual) | SWITCHING | 67m Ω @ 2A, 4.5V | 950mV @ 250μA | 804pF @ 10V | 9.5nC @ 4.5V | 15ns | 20V | 14 ns | 3.6A | 8V | -20V | 14.4A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||
| 2N7002BKV,115 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 12 ns | Tin | 表面贴装 | SOT-563, SOT-666 | YES | 6 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | 1.6Ohm | 逻辑电平兼容 | 350mW | FLAT | 260 | 40 | 6 | Dual | 增强型MOSFET | 525mW | 5 ns | 350mW | 2 N-Channel (Dual) | SWITCHING | 1.6 Ω @ 500mA, 10V | 2.1V @ 250μA | 50pF @ 10V | 0.6nC @ 4.5V | 6ns | 7 ns | 340mA | 20V | 60V | 0.34A | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||
| NX3008PBKS,115 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 65 ns | Tin | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 445mW | 6 | Dual | 445mW | 19 ns | 2 P-Channel (Dual) | 4.1 Ω @ 200mA, 4.5V | 1.1V @ 250μA | 46pF @ 15V | 0.75nC @ 4.5V | 30ns | 30V | 38 ns | 200mA | 8V | -30V | -30V | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
| NX3008NBKV,115 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 2 | 表面贴装 | SOT-563, SOT-666 | YES | SILICON | 400mA | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | FLAT | 6 | AEC-Q101; IEC-60134 | R-PDSO-F6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 500mW | 2 N-Channel (Dual) | SWITCHING | 1.4 Ω @ 350mA, 4.5V | 1.1V @ 250μA | 50pF @ 15V | 0.68nC @ 4.5V | 30V | 0.4A | 30V | METAL-OXIDE SEMICONDUCTOR | 0.39W | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
| NX3008PBKV,115 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 65 ns | 表面贴装 | SOT-563, SOT-666 | YES | 6 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | 500mW | FLAT | 6 | R-PDSO-G3 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | 390mW | 19 ns | 2 P-Channel (Dual) | SWITCHING | 4.1 Ω @ 200mA, 4.5V | 1.1V @ 250μA | 46pF @ 15V | 0.72nC @ 4.5V | 30ns | 30V | 38 ns | 220mA | 8V | -30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||
| NX3008CBKV,115 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 2 | 表面贴装 | SOT-563, SOT-666 | YES | SILICON | 400mA 220mA | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | 低阈值 | DUAL | FLAT | 未说明 | 未说明 | 6 | R-PDSO-F6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 500mW | N and P-Channel | SWITCHING | 1.4 Ω @ 350mA, 4.5V | 1.1V @ 250μA | 50pF @ 15V | 0.68nC @ 4.5V | 30V | N-CHANNEL AND P-CHANNEL | 0.4A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant |