制造商是'Microchip'
Microchip 晶体管 - FET，MOSFET - 单个
(1191)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 终端数量 | 晶体管元件材料 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 额定直流 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 电压 | 元素配置 | 电流 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)（最大值） | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | Vgs（最大值） | 极性/通道类型 | 下降时间（典型值） | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | DS 击穿电压-最小值 | 信道型 | 雪崩能量等级（Eas） | 场效应管技术 | 最大结点温度（Tj） | 场效应管特性 | 环境温度范围高 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||||||||||||||||||||||||||||||||||
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 | 2N7002-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 5V 10V | 1 | 360mW Ta | 20 ns | Tin | 表面贴装 | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | 1.437803g | SILICON | 115mA Tj | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 高输入阻抗 | DUAL | 鸥翼 | 260 | 40 | 1 | Single | 增强型MOSFET | 360mW | 20 ns | N-Channel | SWITCHING | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 50pF @ 25V | ±30V | 115mA | 30V | 60V | 150°C | 5 pF | 1.12mm | 2.92mm | 1.3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | LND150N8-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 0V | 1 | 1.6W Ta | 100 ns | Tin | 表面贴装 | 表面贴装 | TO-243AA | 4 | 52.786812mg | SILICON | 30mA Tj | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 高输入阻抗 | FLAT | 260 | 40 | R-PSSO-F3 | 1 | Single | 1.2W | SOURCE | 90 ns | N-Channel | SWITCHING | 1000 Ω @ 500μA, 0V | 10pF @ 25V | 450ns | ±20V | 450 ns | 30mA | 20V | 0.03A | 500V | 耗尽模式 | 1.6mm | 4.6mm | 2.6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DN3135N8-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 0V | 1 | 1.3W Ta | 15 ns | 表面贴装 | 表面贴装 | TO-243AA | 3 | 52.786812mg | SILICON | 135mA Tj | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | Matte Tin (Sn) | 低阈值 | FLAT | 260 | 40 | 不合格 | 1 | 350V | Single | 135A | 1.3W | DRAIN | 10 ns | N-Channel | SWITCHING | 35 Ω @ 150mA, 0V | 120pF @ 25V | 15ns | ±20V | 15 ns | 135mA | 20V | 350V | 耗尽模式 | 1.6mm | 4.6mm | 2.6mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | DN2470K4-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 0V | 1 | 2.5W Ta | 45 ns | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | 3.949996g | SILICON | 170mA Tj | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | 活跃 | 3 (168 Hours) | 2 | EAR99 | Matte Tin (Sn) - annealed | 鸥翼 | 未说明 | 未说明 | DN2470 | R-PSSO-G2 | 不合格 | 1 | Single | 2.5W | DRAIN | 30 ns | N-Channel | SWITCHING | 42 Ω @ 100mA, 0V | 540pF @ 25V | 45ns | ±20V | 60 ns | 170mA | TO-252AA | 20V | 700V | 0.5A | 耗尽模式 | 2.5146mm | 6.73mm | 6.1mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DN3545N8-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 1 | 1.6W Ta | 30 ns | Tin | 表面贴装 | 表面贴装 | TO-243AA | 4 | 52.786812mg | SILICON | 0V | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 快速切换 | FLAT | 260 | 40 | R-PSSO-F3 | 1 | Single | 1.6W | DRAIN | 20 ns | N-Channel | SWITCHING | 20 Ω @ 150mA, 0V | 360pF @ 25V | 30ns | 450V | ±20V | 30 ns | 200mA | 20V | 0.2A | 450V | 0.3A | 耗尽模式 | 1.6mm | 4.6mm | 2.6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VP2450N8-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 4.5V 10V | 1 | 1.6W Ta | 45 ns | 表面贴装 | 表面贴装 | TO-243AA | 4 | 52.786812mg | SILICON | 160mA Tj | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | Matte Tin (Sn) | FLAT | 260 | 40 | R-PSSO-F3 | 1 | Single | 增强型MOSFET | 1.6W | DRAIN | 10 ns | P-Channel | SWITCHING | 30 Ω @ 100mA, 10V | 3.5V @ 1mA | 190pF @ 25V | 25ns | 500V | ±20V | 25 ns | 160mA | 20V | -500V | 0.8A | 1.6mm | 4.6mm | 2.6mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | APT34N80B2C3G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | N-Channel | 800 V | 34 A | 145 mOhms | - 20 V, + 20 V | 2.1 V | 180 nC | - 55 C | + 150 C | 417 W | Enhancement | 1 | 70 ns | 25 ns | 0.208116 oz | 34 | Tube | APT34N80 | 34A (Tc) | 10V | 417W (Tc) | 活跃 | IN-LINE, R-PSIP-T3 | IN-LINE | PLASTIC/EPOXY | 未说明 | 150 °C | 有 | APT34N80B2C3G | RECTANGULAR | 1 | 活跃 | MICROSEMI CORP | 1.42 | 34 A | 通孔 | T-MAX-3 | NO | T-MAX™ [B2] | 3 | SILICON | 微芯片技术 | Details | -55°C ~ 150°C (TJ) | Tube | - | e1 | 有 | EAR99 | 锡银铜 | 雪崩 额定 | SINGLE | THROUGH-HOLE | 未说明 | compliant | 3 | R-PSIP-T3 | 不合格 | Single | 1 Channel | 增强型MOSFET | 417 | DRAIN | N-Channel | SWITCHING | 145mOhm @ 22A, 10V | 3.9V @ 2mA | 4510 pF @ 25 V | 355 nC @ 10 V | 15 ns | 800 V | ±20V | N-CHANNEL | 0.145 Ω | 102 A | 800 V | N | 670 mJ | METAL-OXIDE SEMICONDUCTOR | - | |||||||||||||||||||||||||||||||||||||||
| TP2104K1-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 4.5V 10V | 1 | 360mW Ta | 5 ns | Tin | 表面贴装 | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | 1.437803g | SILICON | 160mA Tj | -55°C~150°C | Tape & Reel (TR) | 2001 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 低阈值 | DUAL | 鸥翼 | 260 | 40 | 1 | Single | 增强型MOSFET | 360mW | 4 ns | P-Channel | SWITCHING | 6 Ω @ 500mA, 10V | 2V @ 1mA | 60pF @ 25V | 4ns | 40V | ±20V | 4 ns | 160mA | 20V | 6Ohm | -40V | 950μm | 2.9mm | 1.3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DN3535N8-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 0V | 1 | 1.6W Ta | 20 ns | Tin | 表面贴装 | 表面贴装 | TO-243AA | 3 | 52.786812mg | SILICON | 230mA Tj | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 高输入阻抗 | FLAT | 260 | 40 | 1 | Single | 1.6W | DRAIN | 15 ns | N-Channel | SWITCHING | 10 Ω @ 150mA, 0V | 360pF @ 25V | 20ns | ±20V | 20 ns | 230mA | 20V | 350V | 0.5A | 耗尽模式 | 1.6mm | 4.6mm | 2.6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | VN2410L-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 2.5V 10V | 1 | 1W Tc | 23 ns | Tin | 通孔 | 通孔 | TO-226-3, TO-92-3 (TO-226AA) | 3 | 453.59237mg | SILICON | 190mA Tj | -55°C~150°C TJ | Bulk | 2005 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 高输入阻抗 | BOTTOM | NOT APPLICABLE | NOT APPLICABLE | 不合格 | 1 | 240V | Single | 2A | 增强型MOSFET | 1W | 8 ns | N-Channel | SWITCHING | 10 Ω @ 500mA, 10V | 2V @ 1mA | 125pF @ 25V | 8ns | ±20V | 24 ns | 190mA | 20V | 240V | 20 pF | 5.334mm | 5.21mm | 4.19mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | DN3135K1-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 17 Weeks | 0V | 1 | 360mW Ta | 15 ns | 表面贴装 | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | 1.437803g | SILICON | 72mA Tj | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | Matte Tin (Sn) | 低阈值 | DUAL | 鸥翼 | 260 | 40 | 不合格 | 1 | Single | 360mW | 10 ns | N-Channel | SWITCHING | 35 Ω @ 150mA, 0V | 120pF @ 25V | 15ns | ±20V | 15 ns | 72mA | 20V | 0.072A | 350V | 耗尽模式 | 950μm | 2.9mm | 1.3mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP5335K1-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 4.5V 10V | 1 | 360mW Ta | 25 ns | 表面贴装 | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | 1.437803g | SILICON | 85mA Tj | -55°C~150°C | Tape & Reel (TR) | 2013 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | Matte Tin (Sn) - annealed | 低阈值 | DUAL | 鸥翼 | 260 | 40 | 不合格 | 1 | Single | 增强型MOSFET | 360mW | 20 ns | P-Channel | SWITCHING | 30 Ω @ 200mA, 10V | 2.4V @ 1mA | 110pF @ 25V | 15ns | 350V | ±20V | 15 ns | -85mA | 20V | 0.085A | -350V | 150°C | 22 pF | 1.12mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7000-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 4.5V 10V | 1 | 1W Tc | 10 ns | Tin | 通孔 | 通孔 | TO-226-3, TO-92-3 (TO-226AA) | 3 | 453.59237mg | SILICON | 200mA Tj | -55°C~150°C TJ | Bulk | 2008 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 高输入阻抗 | 60V | BOTTOM | 200mA | 1 | Single | 增强型MOSFET | 1W | 10 ns | N-Channel | SWITCHING | 5 Ω @ 500mA, 10V | 3V @ 1mA | 60pF @ 25V | ±30V | 200mA | 800mV | 30V | 0.2A | 5Ohm | 60V | 5 pF | 5.334mm | 5.21mm | 4.19mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DN3525N8-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 0V | 1 | 1.6W Ta | 25 ns | 表面贴装 | 表面贴装 | TO-243AA | 3 | 52.786812mg | SILICON | 360mA Tj | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | Matte Tin (Sn) - annealed | 快速切换 | FLAT | 260 | 40 | 1 | Single | 1.6W | DRAIN | 20 ns | N-Channel | SWITCHING | 6 Ω @ 200mA, 0V | 350pF @ 25V | 25ns | ±20V | 25 ns | 360mA | 20V | 6Ohm | 250V | 1A | 耗尽模式 | 1.6mm | 4.6mm | 2.6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DN2540N8-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 0V | 1 | 1.6W Tc | 15 ns | Tin | 表面贴装 | 表面贴装 | TO-243AA | 3 | 52.786812mg | SILICON | 170mA Tj | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 低阈值 | FLAT | 260 | 40 | 不合格 | 1 | Single | 1.6W | DRAIN | 10 ns | N-Channel | SWITCHING | 25 Ω @ 120mA, 0V | 300pF @ 25V | 15ns | ±20V | 15 ns | 170mA | 20V | 400V | 0.5A | 耗尽模式 | 1.6mm | 4.6mm | 2.6mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN5325N8-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 4.5V 10V | 1 | 1.6W Ta | 25 ns | 表面贴装 | 表面贴装 | TO-243AA | 4 | 52.786812mg | 316mA Tj | Tape & Reel (TR) | 2009 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | Matte Tin (Sn) | 150°C | -55°C | 快速切换 | FLAT | 260 | 40 | R-PSSO-F3 | 不合格 | 1 | Single | 增强型MOSFET | 1.6W | DRAIN | 20 ns | N-Channel | SWITCHING | 7 Ω @ 1A, 10V | 2V @ 1mA | 110pF @ 25V | 15ns | ±20V | 15 ns | 316mA | 20V | 250Ohm | 250V | 1.6mm | 4.6mm | 2.6mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN2130K1-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 2 Weeks | 4.5V | 1 | 360mW Tc | 12 ns | 表面贴装 | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | 1.437803g | SILICON | 85mA Tj | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | Matte Tin (Sn) | 低阈值 | DUAL | 鸥翼 | 260 | 40 | 1 | Single | 增强型MOSFET | 360mW | 10 ns | N-Channel | SWITCHING | 25 Ω @ 120mA, 4.5V | 2.4V @ 1mA | 50pF @ 25V | 7ns | ±20V | 7 ns | 85mA | 20V | 0.085A | 300V | 5 pF | 950μm | 2.9mm | 1.3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DN2625K4-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | 0V | 1 | 10 ns | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | 3.949996g | SILICON | 1.1A Tj | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | 活跃 | 3 (168 Hours) | 2 | EAR99 | 低阈值 | 鸥翼 | 未说明 | 未说明 | R-PSSO-G2 | 不合格 | 1 | Single | DRAIN | 10 ns | N-Channel | SWITCHING | 3.5 Ω @ 1A, 0V | 1000pF @ 25V | 7.04nC @ 1.5V | 20ns | ±20V | 20 ns | 1.1A | 20V | 250V | 耗尽模式 | 2.39mm | 6.73mm | 6.1mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LND150N3-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 0V | 1 | 740mW Ta | 100 ns | Tin | 通孔 | 通孔 | TO-226-3, TO-92-3 (TO-226AA) | 3 | 219.992299mg | SILICON | 30mA Tj | -55°C~150°C TJ | Bulk | 2014 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 高输入阻抗 | BOTTOM | 1 | Single | 740mW | 90 ns | N-Channel | SWITCHING | 1000 Ω @ 500μA, 0V | 10pF @ 25V | 450ns | ±20V | 450 ns | 30mA | 20V | 500V | 耗尽模式 | 5.33mm | 5.21mm | 4.19mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN2540N8-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 2 Weeks | 4.5V 10V | 1 | 1.6W Ta | 25 ns | Tin | 表面贴装 | 表面贴装 | TO-243AA | 4 | 52.786812mg | SILICON | 260mA Tj | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 低阈值 | FLAT | 260 | 40 | R-PSSO-F3 | 不合格 | 1 | Single | 增强型MOSFET | 1.6W | DRAIN | 20 ns | N-Channel | SWITCHING | 12 Ω @ 500mA, 10V | 2V @ 1mA | 125pF @ 25V | 15ns | ±20V | 15 ns | 260mA | 20V | 0.57A | 400V | 1.6mm | 4.6mm | 2.6mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2510N8-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 10V | 1 | 1.6W Ta | 20 ns | 表面贴装 | 表面贴装 | TO-243AA | 4 | 52.786812mg | SILICON | 480mA Tj | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | Matte Tin (Sn) - annealed | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD | FLAT | 260 | 40 | R-PSSO-F3 | 1 | Single | 增强型MOSFET | 1.6W | DRAIN | 10 ns | P-Channel | SWITCHING | 3.5 Ω @ 750mA, 10V | 2.4V @ 1mA | 125pF @ 25V | 15ns | 100V | ±20V | 15 ns | 480mA | 20V | -100V | 2.5A | 1.6mm | 4.6mm | 2.6mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN0104N8-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 3V 10V | 1 | 1.6W Tc | 6 ns | Tin | 表面贴装 | 表面贴装 | TO-243AA | 4 | 52.786812mg | SILICON | 630mA Tj | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | LOW THRESHOLD, LOGIC LEVEL COMPATIBLE | FLAT | 260 | 40 | R-PSSO-F3 | 1 | Single | 增强型MOSFET | 1.6W | DRAIN | 3 ns | N-Channel | SWITCHING | 2 Ω @ 1A, 10V | 1.6V @ 500μA | 70pF @ 20V | 7ns | ±20V | 7 ns | 630mA | 20V | 0.63A | 2Ohm | 40V | 1.6mm | 4.6mm | 2.6mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | VP2110K1-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 5V 10V | 1 | 360mW Ta | 5 ns | Tin | 表面贴装 | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | 1.437803g | SILICON | 120mA Tj | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 低阈值 | DUAL | 鸥翼 | 260 | 40 | 1 | Single | 增强型MOSFET | 360mW | 4 ns | P-Channel | SWITCHING | 12 Ω @ 500mA, 10V | 3.5V @ 1mA | 60pF @ 25V | 5ns | 100V | ±20V | 5 ns | 120mA | 20V | -100V | 8 pF | 950μm | 2.9mm | 1.3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT34N80LC3G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | N-Channel | 800 V | 34 A | 125 mOhms | - 20 V, + 20 V | 3 V | 180 nC | - 55 C | + 150 C | 417 W | Enhancement | 1 | 70 ns | 25 ns | 0.352740 oz | Tube | APT34N80 | 34A (Tc) | 10V | 417W (Tc) | 活跃 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT | PLASTIC/EPOXY | 未说明 | 150 °C | 有 | APT34N80LC3G | RECTANGULAR | 1 | 活跃 | MICROSEMI CORP | 5.16 | TO-264AA | 34 A | 通孔 | TO-264-3 | NO | TO-264 [L] | 3 | SILICON | 微芯片技术 | Details | -55°C ~ 150°C (TJ) | Tube | - | e1 | 有 | 锡银铜 | 雪崩 额定 | SINGLE | THROUGH-HOLE | 未说明 | compliant | 3 | R-PSFM-T3 | 不合格 | Single | 1 Channel | 增强型MOSFET | DRAIN | N-Channel | SWITCHING | 145mOhm @ 22A, 10V | 3.9V @ 2mA | 4510 pF @ 25 V | 355 nC @ 10 V | 15 ns | 800 V | ±20V | N-CHANNEL | TO-264AA | 0.145 Ω | 102 A | 800 V | 670 mJ | METAL-OXIDE SEMICONDUCTOR | - | 5.21 mm | 26.49 mm | 20.5 mm | ||||||||||||||||||||||||||||||||||||||
| VN0300L-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 5V 10V | 1 | 1W Tc | 通孔 | 通孔 | TO-226-3, TO-92-3 (TO-226AA) | 3 | 453.59237mg | SILICON | 640mA Tj | -55°C~150°C TJ | Bulk | 2013 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | Matte Tin (Sn) | 低阈值 | BOTTOM | 1 | Single | 增强型MOSFET | 1W | N-Channel | SWITCHING | 1.2 Ω @ 1A, 10V | 2.5V @ 1mA | 190pF @ 20V | ±30V | 640mA | 30V | 0.64A | 30V | 50 pF | 5.33mm | 5.21mm | 4.19mm | 无 | ROHS3 Compliant |