类别是'存储器 - 模块'
存储器 - 模块 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 额定直流 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 速度 | 操作模式 | uPs/uCs/外围ICs类型 | 时钟频率 | 访问时间 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 访问时间（最大） | I/O类型 | 刷新周期 | 访问模式 | 主机数据传输速率-最大 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
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 | MT18VDDF12872HY-335F1 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 | Socket | 200-SODIMM | 200 | DDR SDRAM | Bulk | 2003 | e4 | Obsolete | 1 (Unlimited) | 200 | EAR99 | Gold (Au) | 70°C | 0°C | AUTO/SELF REFRESH | 8542.32.00.36 | DUAL | 无铅 | 260 | 1 | 2.5V | unknown | 30 | 200 | 不合格 | 2.5V | COMMERCIAL | 2.7V | 2.3V | 1GB | 1 | 333MT/s | SYNCHRONOUS | 700 ps | 128MX72 | 72 | 9663676416 bit | 333MHz | 31.8mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
 | WD2SN02GX816-667G-PF | Wintec Industries | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 200-SODIMM | 200 | DDR2 SDRAM | 2012 | 不用于新设计 | 1 (Unlimited) | 667MHz | 2GB | 667MHz | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MT9LSDT1672AY-133G3 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 | Socket | 168-UDIMM | 168 | SDRAM | Bulk | 2002 | Obsolete | 1 (Unlimited) | 65°C | 0°C | 133MHz | 3.3V | 3.6V | 3V | 128MB | 133MHz | 72b | 133MHz | 34.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | MT4HTF1664HY-40EB3 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 200-SODIMM | NO | 200 | DDR2 SDRAM | Bulk | 2004 | e3 | yes | Discontinued | 1 (Unlimited) | 200 | Matte Tin (Sn) | 70°C | 0°C | DUAL | 260 | 1.8V | 0.6mm | 30 | 1.8V | COMMERCIAL | 128MB | 400MT/s | 64b | 16MX64 | 3-STATE | 64 | 0.02A | 1073741824 bit | 400MHz | 0.6 ns | COMMON | 8192 | 30mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
| MT8HTF12864HDY-667E1 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 | Socket | 200-SODIMM | 200 | DDR2 SDRAM | 2010 | Obsolete | 1 (Unlimited) | 200 | 70°C | 0°C | DUAL | 无铅 | 1.8V | 0.6mm | unknown | 不合格 | 1.8V | COMMERCIAL | 1.9V | 1.7V | 1GB | 667MT/s | 333MHz | 3-STATE | 64 | 0.056A | 667MHz | 0.45 ns | COMMON | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||
 | MT36HTF51272PY-667E1 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 240-RDIMM | 240 | DDR2 SDRAM | 2002 | Obsolete | 1 (Unlimited) | 4GB | 667MT/s | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MT4JSF12864HZ-1G4D1 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 | Socket | 204-SODIMM | 204 | DDR3 SDRAM | 2011 | Obsolete | 3 (168 Hours) | 204 | EAR99 | 70°C | 0°C | WD-MAX | DUAL | 无铅 | 未说明 | 1 | 1.35V | 0.6mm | unknown | 未说明 | 204 | 不合格 | 1.5V | COMMERCIAL | 1.575V | 1.425V | 1GB | 1 | 1333MT/s | SYNCHRONOUS | 667MHz | 3-STATE | 64 | 1.333GHz | 0.255 ns | COMMON | 8192 | 单库页面突发 | 30.15mm | 67.6mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||
 | MT18KDF1G72PDZ-1G4E1 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 | Socket | 240-RDIMM | 240 | DDR3L SDRAM | 2015 | Obsolete | 3 (168 Hours) | 240 | 70°C | 0°C | AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | DUAL | 无铅 | 1 | 1.35V | 1mm | unknown | 1.35V | COMMERCIAL | 1.45V | 1.283V | 8GB | 1 | 1333MT/s | SYNCHRONOUS | 72b | 1GX72 | 72 | 77309411328 bit | 1.333GHz | 双库页面突发 | 133.35mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
 | SFUI16GBJ1BP2MT-I-QT-231-STD | Swissbit | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Module | FLASH - NAND (SLC) | 2014 | U-110 | Obsolete | 1 (Unlimited) | 1GB | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MT8HTF12864AZ-800M1 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 240-UDIMM | NO | 240 | DDR2 SDRAM | 2014 | Obsolete | 3 (168 Hours) | 240 | 70°C | 0°C | SELF REFRESH; WD-MAX | DUAL | 无铅 | 1 | 1.8V | 1.8V | 1.9V | COMMERCIAL | 1.7V | 1GB | 1 | 800MT/s | SYNCHRONOUS | 64b | 128MX64 | 64 | 8589934592 bit | 400MHz | 单库页面突发 | 30.5mm | 133.35mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||
 | MT9HTF12872AZ-80EM1 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 240-UDIMM | NO | 240 | DDR2 SDRAM | 2014 | Obsolete | 1 (Unlimited) | 240 | 70°C | 0°C | AUTO/SELF REFRESH; WD-MAX | DUAL | 无铅 | 1 | 1.8V | 1.8V | 1.9V | COMMERCIAL | 1.7V | 1GB | 1 | 800MT/s | SYNCHRONOUS | 72b | 128MX72 | 72 | 9663676416 bit | 400MHz | 单库页面突发 | 30.5mm | 133.35mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||
| MT16VDDF6464HG-40BG2 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 70°C | 200-SODIMM | NO | 200 | DDR SDRAM | Bulk | 2002 | Obsolete | 1 (Unlimited) | 200 | DUAL | 无铅 | 2.6V | 0.6mm | not_compliant | 不合格 | 2.6V | COMMERCIAL | 512MB | 400MT/s | 64MX64 | 3-STATE | 64 | 0.064A | 4294967296 bit | 0.7 ns | COMMON | 8192 | 38.1mm | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||
| MT18HTF25672AY-40EA1 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 | Socket | 240-UDIMM | 240 | DDR2 SDRAM | Bulk | 2010 | Discontinued | 1 (Unlimited) | 85°C | 0°C | 1.8V | 1.9V | 1.7V | 2GB | 400MT/s | 60 ps | 72b | 400MHz | 30mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| MT18HTF6472AY-40EB2 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 | Socket | 240-UDIMM | 240 | DDR2 SDRAM | Bulk | 2010 | Obsolete | 1 (Unlimited) | 240 | 85°C | 0°C | DUAL | 无铅 | 1.8V | 1mm | unknown | 不合格 | 1.8V | COMMERCIAL | 1.9V | 1.7V | 512MB | 400MT/s | 200MHz | 60 ps | 64MX72 | 3-STATE | 72 | 400MHz | COMMON | 8192 | 30mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||
| MT4HTF1664HY-53EB3 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 200-SODIMM | NO | 200 | DDR2 SDRAM | Bulk | 2004 | e3 | yes | Discontinued | 1 (Unlimited) | 200 | Matte Tin (Sn) | 70°C | 0°C | DUAL | 260 | 1.8V | 0.6mm | 30 | 1.8V | COMMERCIAL | 128MB | 533MT/s | 267MHz | 64b | 16MX64 | 3-STATE | 64 | 0.02A | 1073741824 bit | 533MHz | 0.5 ns | COMMON | 8192 | 30mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
| MT8HTF3264HDY-40EB3 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 70°C | 200-SODIMM | NO | 200 | DDR2 SDRAM | 2010 | e4 | Discontinued | 1 (Unlimited) | 200 | GOLD | DUAL | 无铅 | 1.8V | 0.6mm | 不合格 | 1.8V | COMMERCIAL | 256MB | 400MT/s | 32MX64 | 3-STATE | 64 | 0.04A | 2147483648 bit | 0.6 ns | COMMON | 8192 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
| MT18HVF25672PZ-667H1 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 70°C | 240-RDIMM | NO | 240 | DDR2 SDRAM | 2010 | e4 | Obsolete | 3 (168 Hours) | 240 | EAR99 | GOLD | AUTO/SELF REFRESH | 8542.32.00.36 | DUAL | 无铅 | 1 | 1.8V | 1mm | 240 | 不合格 | 1.9V | 1.8V | COMMERCIAL | 1.7V | 2GB | 1 | 667MT/s | SYNCHRONOUS | 333MHz | 256MX72 | 3-STATE | 72 | 0.126A | 19327352832 bit | 0.45 ns | COMMON | 8192 | 单库页面突发 | 18.05mm | 133.35mm | 17.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||
| MT36HTF51272FDZ-80EH1N8 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 95°C | 240-FBDIMM | NO | 240 | DDR2 SDRAM | 2010 | e4 | Discontinued | 3 (168 Hours) | 240 | EAR99 | GOLD | AUTO/SELF REFRESH | 8542.32.00.36 | DUAL | 1 | 1.8V | 1mm | 240 | 1.8V | OTHER | 4GB | 1 | 800MT/s | 400MHz | 72b | 512MX72 | 3-STATE | 72 | 38654705664 bit | 800MHz | COMMON | 8192 | 四库页面突发 | 30.5mm | 133.35mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||
 | MT8VDDT6464HDY-40BJ1 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 | Socket | 200-SODIMM | 200 | DDR SDRAM | 2003 | Obsolete | 1 (Unlimited) | 200 | 70°C | 0°C | DUAL | 2.6V | 0.6mm | 2.6V | COMMERCIAL | 2.7V | 2.5V | 512MB | 400MT/s | 900 ns | 64b | 64MX64 | 3-STATE | 64 | 0.04A | 4294967296 bit | 400MHz | COMMON | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||
 | MT8VDDT6464HY-335F3 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 | Socket | 200-SODIMM | 200 | DDR SDRAM | 2003 | e4 | Obsolete | 1 (Unlimited) | 200 | EAR99 | GOLD | 70°C | 0°C | AUTO/SELF REFRESH; WD-MAX | DUAL | 260 | 1 | 2.5V | 0.6mm | 30 | 200 | 2.5V | COMMERCIAL | 2.7V | 2.3V | 512MB | 1 | 333MT/s | 167MHz | 3-STATE | 8 | 0.04A | 333MHz | 0.7 ns | COMMON | 单库页面突发 | 31.9mm | 67.6mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||
 | MT18KSF51272AZ-1G4K1 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 18 | Socket | 240-UDIMM | 240 | DDR3L SDRAM | 2012 | e4 | Obsolete | 3 (168 Hours) | 240 | EAR99 | GOLD | 70°C | 0°C | AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM | 8542.32.00.36 | DUAL | 无铅 | 1 | 1.35V | 240 | 1.35V | COMMERCIAL | 1.45V | 1.235V | 4GB | 1 | 1333MT/s | SYNCHRONOUS | 72b | 512MX72 | 72 | 38654705664 bit | 1.333GHz | 双库页面突发 | 30.5mm | 133.35mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||
 | MT18KDF51272PZ-1G4K1 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 | Socket | 240-RDIMM | 240 | DDR3L SDRAM | 2013 | Obsolete | 3 (168 Hours) | 240 | EAR99 | 70°C | 0°C | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX | 8542.32.00.36 | DUAL | 无铅 | 1 | 1.35V | 1mm | 1.35V | COMMERCIAL | 1.45V | 1.283V | 4GB | 1 | 1333MT/s | SYNCHRONOUS | 72b | 512MX72 | 72 | 38654705664 bit | 1.333GHz | 单库页面突发 | 133.35mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
| MT18KSF1G72HZ-1G6E2 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 | Socket | 204-SODIMM | 204 | DDR3L SDRAM | 2013 | e4 | Obsolete | 3 (168 Hours) | 204 | Gold (Au) | 70°C | 0°C | AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | ZIG-ZAG | 无铅 | 未说明 | 1 | 1.35V | 未说明 | 1.35V | COMMERCIAL | 1.45V | 1.283V | 8GB | 1 | 1600MT/s | SYNCHRONOUS | 1GX72 | 72 | 77309411328 bit | 1.6GHz | 双库页面突发 | 30.15mm | 67.6mm | 3.8mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||
| MT9KSF51272AZ-1G6P1 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 3 Weeks | 70°C | 240-UDIMM | NO | 240 | DDR3L SDRAM | 活跃 | 3 (168 Hours) | 240 | EAR99 | AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | DUAL | 无铅 | 1 | 1.35V | 1mm | 1.45V | COMMERCIAL | 1.283V | 4GB | 1 | 1600MT/s | SYNCHRONOUS | 512MX72 | 72 | 38654705664 bit | 单库页面突发 | 30.5mm | 133.35mm | 2.7mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||
 | MTEDCBR008SAJ-1N2 | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 70°C | Module | YES | FLASH - NAND (SLC) | 2013 | Obsolete | 1 (Unlimited) | 10 | 8542.31.00.01 | 3.3V | UNSPECIFIED | 无铅 | 未说明 | 3.3V | 未说明 | R-XXMA-N10 | COMMERCIAL | 3.3V | USB | 8GB | SECONDARY STORAGE CONTROLLER, FLASH MEMORY DRIVE | 64 Gb | 30 MBps | 5.9mm | 36.9mm | 26.6mm | ROHS3 Compliant |