类别是'存储器 - 模块'
存储器 - 模块 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 包装/外壳 | 表面安装 | 终端数量 | Date Of Intro | 包装 | JESD-609代码 | 无铅代码 | ECCN 代码 | 类型 | 端子表面处理 | HTS代码 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 内存大小 | 操作模式 | 电源电流-最大值 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 并行/串行 | I/O类型 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 写入保护 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | 长度 | 宽度 | ||||||||||||||||||||||||||||
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MX25U6473FMBI-10G | Macronix International Co Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | MACRONIX INTERNATIONAL CO LTD | , | Obsolete | EAR99 | 8542.32.00.51 | unknown | FLASH | 1.8 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MX25L802MC-50 | Macronix International Co Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | MACRONIX INTERNATIONAL CO LTD | SOIC | SOP, SOP28,.45 | 20 MHz | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | SOP | SOP28,.45 | RECTANGULAR | 小概要 | 3.3 V | YES | 28 | 无 | e0 | EAR99 | NOR型号 | 锡铅 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 1.27 mm | unknown | 28 | R-PDSO-G28 | 不合格 | 3.6 V | COMMERCIAL | 3 V | SYNCHRONOUS | 0.03 mA | 1MX8 | 2.84 mm | 8 | 0.00006 A | 8388608 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 15 ms | 18.11 mm | 8.4 mm | ||||||||||||||||||||||||||||||||||||||
DM87S181N | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | NATIONAL SEMICONDUCTOR CORP | DIP | DIP, DIP24,.6 | 55 ns | 1024 words | 1000 | 70 °C | PLASTIC/EPOXY | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | 5 V | NO | 24 | 无 | e0 | 无 | EAR99 | 锡铅 | 8542.32.00.71 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 24 | R-PDIP-T24 | 不合格 | 5.25 V | COMMERCIAL | 4.75 V | ASYNCHRONOUS | 0.17 mA | 1KX8 | 3-STATE | 5.334 mm | 8 | 8192 bit | PARALLEL | OTP ROM | 31.915 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||
HM1-7611-2 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | HARRIS SEMICONDUCTOR | DIP, DIP16,.3 | 75 ns | 256 words | 256 | 125 °C | -55 °C | CERAMIC | DIP | DIP16,.3 | RECTANGULAR | IN-LINE | 5 V | NO | 16 | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-XDIP-T16 | 不合格 | MILITARY | 0.13 mA | 256X4 | 4 | 1024 bit | OTP ROM | |||||||||||||||||||||||||||||||||||||||||||||||||||||
HM1-7611-2 | Intersil Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INTERSIL CORP | 85 ns | 256 words | 4000 | 125 °C | -55 °C | CERAMIC | DIP | DIP16,.3 | RECTANGULAR | IN-LINE | 5 V | NO | 16 | 无 | e0 | EAR99 | 锡铅 | 8542.32.00.71 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | R-XDIP-T16 | 不合格 | MILITARY | ASYNCHRONOUS | 0.13 mA | 4KX8 | 8 | 32768 bit | PARALLEL | OTP ROM | |||||||||||||||||||||||||||||||||||||||||||||||||||
EN25S20A-104XIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 接触制造商 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | USON-8 | 104 MHz | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 1.8 V | YES | 8 | 有 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 无铅 | 未说明 | 1 | 0.5 mm | unknown | 未说明 | R-PDSO-N8 | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 256KX8 | 0.6 mm | 8 | 2097152 bit | SERIAL | FLASH | 1.8 V | 3 mm | 2 mm | ||||||||||||||||||||||||||||||||||||||||||||||
EN25S20A-104XIP | Eon Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | EON SILICON SOLUTION INC | 2 X 3 MM, HALOGEN FREE, ROHS AND REACH COMPLIANT, USON-8 | 104 MHz | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 1.8 V | YES | 8 | Transferred | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 无铅 | 1 | 0.5 mm | unknown | R-PDSO-N8 | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 256KX8 | 0.6 mm | 8 | 2097152 bit | SERIAL | FLASH | 1.8 V | 3 mm | 2 mm | |||||||||||||||||||||||||||||||||||||||||||||||||
PC28F640J3C115 | Intel Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INTEL CORP | BGA | LEAD FREE, BGA-64 | 115 ns | 3 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | 3 V | 4000000 | 4194304 words | YES | 64 | 有 | e1 | NOR型号 | 锡银铜 | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 15 | 64 | R-PBGA-B64 | 不合格 | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.08 mA | 4MX16 | 1.2 mm | 0.00012 A | 67108864 bit | PARALLEL | FLASH | 2.7 V | 8 | NO | NO | YES | 64 | 128K | 4/8 words | YES | YES | 13 mm | 10 mm | ||||||||||||||||||||||||||||||
MX29GA257EHXCI-90Q | Macronix International Co Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | MACRONIX INTERNATIONAL CO LTD | BGA | 13 X 10 MM, 1.20 MM HEIGHT, 1 MM PITCH, ROHS COMPLIANT, MO-216, FBGA-64 | 90 ns | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | 3.3 V | YES | 64 | 有 | EAR99 | NOR型号 | 8542.32.00.51 | BOTTOM | BALL | 未说明 | 1 | 1 mm | unknown | 未说明 | 64 | R-PBGA-B64 | 不合格 | 3.6 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.1 mA | 16MX16 | 1.2 mm | 16 | 0.0001 A | 268435456 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 256 | 128K | 8/16 words | YES | YES | 13 mm | 10 mm | |||||||||||||||||||||||||||||||
IS29GL128-70FLEH | Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | INTEGRATED SILICON SOLUTION INC | LBGA, | 70 ns | 134217728 words | 128000000 | 105 °C | -40 °C | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | 3 V | YES | 64 | 有 | e3 | EAR99 | TIN | 8542.32.00.51 | BOTTOM | BALL | 1 | 1 mm | compliant | R-PBGA-B64 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 128MX1 | 1.4 mm | 1 | 134217728 bit | PARALLEL | FLASH | 3 V | 13 mm | 11 mm | |||||||||||||||||||||||||||||||||||||||||||||||
M25P40-VMW6TP | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NUMONYX | SOIC | SOP, | 75 MHz | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | RECTANGULAR | 小概要 | YES | 8 | Obsolete | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 1.27 mm | unknown | 8 | R-PDSO-G8 | 不合格 | 3.6 V | INDUSTRIAL | 2.3 V | SYNCHRONOUS | 0.015 mA | 512KX8 | 2.5 mm | 8 | 4194304 bit | SERIAL | FLASH | 2.7 V | 15 ms | 5.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||
MX30UF4G18AC-XKI/TRAY | Macronix International Co Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S29GL01GS11TFA023 | Cypress Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | CYPRESS SEMICONDUCTOR CORP | TSSOP, | 110 ns | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 3 V | YES | 56 | 2017-05-03 | Transferred | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 0.5 mm | compliant | R-PDSO-G56 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.08 mA | 128MX8 | 1.2 mm | 8 | 1073741824 bit | AEC-Q100 | PARALLEL | FLASH | 3 V | BOTTOM/TOP | 18.4 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||
S29GL064M10TAIR1 | AMD | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ADVANCED MICRO DEVICES INC | Obsolete | EAR99 | 8542.32.00.51 | unknown | FLASH | 3 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
25CS640-H/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | SOIC-8 | 20 MHz | 2.5 V | 5.5 V | SMD/SMT | 200 Year | - 40 C | + 150 C | 5 mA | 100 | SPI | Tube | 2.5 V to 5.5 V | 64 kbit | 8 k x 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
25CS640T-H/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | SOIC-8 | 20 MHz | 1.7 V | 5.5 V | SMD/SMT | 200 Year | - 40 C | + 150 C | 5 mA | 3300 | SPI | Reel | 1.7 V to 5.5 V | 64 kbit | 8 k x 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MX25L12872FM2I-10G/TR | Macronix International Co Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AM27LV010B-200JC | AMD | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 200 ns | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | 3.3 V | QCCJ, LDCC32,.5X.6 | QFJ | ADVANCED MICRO DEVICES INC | Obsolete | YES | 32 | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | QUAD | J BEND | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | 不合格 | 3.6 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.015 mA | 128KX8 | 3-STATE | 3.556 mm | 8 | 0.000025 A | 1048576 bit | PARALLEL | COMMON | OTP ROM | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||||||
ES29LV800DT-70TC | Excel (Suzhou) Semiconductor Co Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | EXCEL SEMICONDUCTOR INC | TSSOP, TSSOP48,.8,20 | 70 ns | 3 | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | 48 | 无 | e0 | EAR99 | NOR型号 | 锡铅 | 8542.32.00.51 | DUAL | 鸥翼 | 240 | 0.5 mm | unknown | R-PDSO-G48 | 不合格 | COMMERCIAL | 0.03 mA | 512KX16 | 16 | 0.00001 A | 8388608 bit | PARALLEL | FLASH | 100000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | TOP | |||||||||||||||||||||||||||||||||||||||||
82S185A/BVA | YAGEO Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 飞利浦组件 | , | 55 ns | 2048 words | 2000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | IN-LINE | 5 V | NO | 18 | Obsolete | EAR99 | 8542.32.00.71 | DUAL | THROUGH-HOLE | 1 | unknown | R-CDIP-T18 | 不合格 | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 2KX4 | 3-STATE | 4 | 8192 bit | PARALLEL | OTP ROM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
82S185A/BVA | NXP Semiconductors | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NXP SEMICONDUCTORS | DIP | DIP, | 55 ns | 2048 words | 2000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | 5 V | NO | 18 | Obsolete | EAR99 | 8542.32.00.71 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | 18 | R-GDIP-T18 | 不合格 | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 2KX4 | 3-STATE | 5.08 mm | 4 | 8192 bit | PARALLEL | OTP ROM | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||
MX27L256QC-20 | Macronix International Co Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | MACRONIX INTERNATIONAL CO LTD | LCC | QCCJ, LDCC32,.5X.6 | 200 ns | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | 3 V | YES | 32 | 无 | e0 | EAR99 | 锡铅 | 8542.32.00.71 | QUAD | J BEND | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | 不合格 | 3.6 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.01 mA | 32KX8 | 3-STATE | 3.55 mm | 8 | 0.00001 A | 262144 bit | PARALLEL | COMMON | OTP ROM | 12.75 V | 14.05 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||||
MZ-V9P2T0GW | Samsung Electronics Co. Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NM29A080V | National Semiconductor Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | NATIONAL SEMICONDUCTOR CORP | PLASTIC, LCC-32 | 4 MHz | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | SQUARE | CHIP CARRIER | 5 V | YES | 32 | 无 | e0 | EAR99 | NOR型号 | 锡铅 | 8542.32.00.51 | QUAD | J BEND | 1 | 1.27 mm | unknown | S-PQCC-J32 | 不合格 | 5.5 V | COMMERCIAL | 4.5 V | SYNCHRONOUS | 0.02 mA | 8MX1 | 3-STATE | 3.55 mm | 1 | 0.00005 A | 8388608 bit | SERIAL | FLASH | 5 V | MICROWIRE | 100000 Write/Erase Cycles | SOFTWARE | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||||||||||||
NM29A080V | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | NATIONAL SEMICONDUCTOR CORP | QFJ | QCCJ, LDCC32,.5X.6 | 4 MHz | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | SQUARE | CHIP CARRIER | 5 V | YES | 32 | 无 | e0 | 无 | EAR99 | NOR型号 | 锡铅 | 8542.32.00.51 | QUAD | J BEND | 1 | 1.27 mm | unknown | 32 | S-PQCC-J32 | 不合格 | 5.5 V | COMMERCIAL | 4.5 V | SYNCHRONOUS | 0.02 mA | 8MX1 | 3-STATE | 3.55 mm | 1 | 0.00005 A | 8388608 bit | SERIAL | FLASH | 5 V | MICROWIRE | 100000 Write/Erase Cycles | SOFTWARE | 13.97 mm | 11.43 mm |