类别是'专用'
专用 (1453)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 表面安装 | 终端数量 | JESD-609代码 | 无铅代码 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 引脚数量 | JESD-30代码 | 资历状况 | 电源电压-最大值(Vsup) | 温度等级 | 电源电压-最小值(Vsup) | 端口的数量 | 操作模式 | 电源电流-最大值 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 待机电流-最大值 | 记忆密度 | 并行/串行 | I/O类型 | 内存IC类型 | 输出启用 | 刷新周期 | 访问模式 | 混合内存类型 | 长度 | 宽度 | |||||||||||||||||
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![]() | SST34HF1622S-70-4E-L1P | Silicon Storage Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | SILICON STORAGE TECHNOLOGY INC | BGA | LFBGA, | 1048576 words | 1000000 | 85 °C | -20 °C | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 3 V | 56 | Obsolete | EAR99 | SRAM IS ORGANIZED AS 128K X 16 / 256K X 8; FLASH CAN ALSO BE ORGANIZED AS 2M X 8 | 8542.32.00.71 | BOTTOM | BALL | 1 | 0.8 mm | unknown | 56 | R-PBGA-B56 | 不合格 | 3.3 V | OTHER | 2.7 V | ASYNCHRONOUS | 1MX16 | 1.4 mm | 16 | 16777216 bit | 存储器电路 | 10 mm | 8 mm | ||||||||||||||||||||
![]() | XC17S20XLPDG8I | AMD Xilinx | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | XILINX INC | DIP | DIP, | 1 | 179160 words | 179160 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | 3.3 V | 8 | 有 | e3 | 有 | EAR99 | Matte Tin (Sn) | 8542.32.00.71 | DUAL | THROUGH-HOLE | 250 | 1 | 2.54 mm | compliant | 30 | 8 | R-PDIP-T8 | 不合格 | 3.6 V | INDUSTRIAL | 3 V | SYNCHRONOUS | 179160X1 | 4.5974 mm | 1 | 179160 bit | 存储器电路 | 9.3599 mm | 7.62 mm | ||||||||||||||
![]() | DS1235YW | Dallas Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | DALLAS SEMICONDUCTOR | Obsolete | EAR99 | 8542.32.00.71 | unknown | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S63256 | Asahi Kasei Microsystems Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ASAHI KASEI MICRODEVICES CORP | , | 活跃 | EAR99 | 8542.32.00.71 | unknown | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | HYG0UEG0AF1P-6SS0E | SK Hynix Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | SK HYNIX INC | FBGA-149 | 33554432 words | 32000000 | 85 °C | -30 °C | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 1.8 V | 149 | 活跃 | EAR99 | IT ALSO CONTAINS 512MBIT(64MBIT X 8) MOBILE DDR SDRAM OPERATES AT 2.7V NOM SUPPLY | 8542.32.00.71 | BOTTOM | BALL | 1 | 0.8 mm | compliant | R-PBGA-B149 | 1.95 V | OTHER | 1.7 V | SYNCHRONOUS | 32MX16 | 1.4 mm | 16 | 536870912 bit | 存储器电路 | 14 mm | 10 mm | |||||||||||||||||||||||
![]() | AM2764A | AMD | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ADVANCED MICRO DEVICES INC | , | Obsolete | EAR99 | 8542.32.00.71 | unknown | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | TMS4C1060-30N | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | TEXAS INSTRUMENTS INC | DIP, DIP16,.3 | 25 ns | 70 °C | PLASTIC/EPOXY | DIP | DIP16,.3 | RECTANGULAR | IN-LINE | 5 V | 16 | 无 | EAR99 | 8542.32.00.71 | DUAL | THROUGH-HOLE | 未说明 | 2.54 mm | not_compliant | 未说明 | R-PDIP-T16 | 不合格 | COMMERCIAL | 0.05 mA | 0.01 A | 存储器电路 | |||||||||||||||||||||||||||||
![]() | TH50VSF0302BAXB | Toshiba America Electronic Components | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | TOSHIBA CORP | BGA | LBGA, BGA48,6X8,40 | 100 ns | 85 °C | -20 °C | PLASTIC/EPOXY | LBGA | BGA48,6X8,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | 3 V | 1000000 | 1048576 words | 48 | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | SRAM IS ORGANISED AS 128K X 8 | 8542.32.00.71 | BOTTOM | BALL | 1 | 1 mm | unknown | 48 | R-PBGA-B48 | 不合格 | 3.6 V | OTHER | 2.7 V | ASYNCHRONOUS | 0.04 mA | 1MX8 | 1.6 mm | 8 | 0.00003 A | 8388608 bit | 存储器电路 | FLASH+SRAM | 12 mm | 10 mm | ||||||||||||
![]() | S71WS256NC0BFWAP2 | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SPANSION INC | BGA | 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84 | 80 ns | 3 | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | BGA84,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 84 | 有 | e1 | EAR99 | 锡银铜 | PSRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 40 | 84 | R-PBGA-B84 | 不合格 | 1.95 V | OTHER | 1.7 V | ASYNCHRONOUS | 0.054 mA | 16MX16 | 1.2 mm | 16 | 0.00007 A | 268435456 bit | 存储器电路 | FLASH+PSRAM | 11.6 mm | 8 mm | |||||||||
![]() | TC518128AFL-10 | Toshiba America Electronic Components | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | TOSHIBA CORP | SOIC | 100 ns | 131072 words | 128000 | 70 °C | PLASTIC/EPOXY | SOP | RECTANGULAR | 小概要 | 5 V | 32 | 无 | CE/AUTO/SELF REFRESH | DUAL | 鸥翼 | 1 | 1.27 mm | unknown | 32 | R-PDSO-G32 | 不合格 | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 128KX8 | 3-STATE | 2.8 mm | 8 | 1048576 bit | PARALLEL | PSEUDO STATIC RAM | YES | 20.6 mm | 8.8 mm | ||||||||||||||||||
![]() | MCM6605AL | Freescale Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | MOTOROLA SEMICONDUCTOR PRODUCTS | DIP, DIP22,.4 | 300 ns | 4096 words | 4000 | 70 °C | CERAMIC | DIP | DIP22,.4 | RECTANGULAR | IN-LINE | 22 | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-XDIP-T22 | 不合格 | COMMERCIAL | 4KX1 | 3-STATE | 1 | 4096 bit | SEPARATE | 32 | |||||||||||||||||||||||||
![]() | MCM6605AL | Motorola Semiconductor Products | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | MOTOROLA INC | DIP, DIP22,.4 | 300 ns | 4096 words | 4000 | 70 °C | CERAMIC | DIP | DIP22,.4 | RECTANGULAR | IN-LINE | 22 | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-XDIP-T22 | 不合格 | COMMERCIAL | 4KX1 | 3-STATE | 1 | 4096 bit | SEPARATE | 32 | |||||||||||||||||||||||||
![]() | S71VS064RB0AHT0L0 | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SPANSION INC | , BGA52,6X10,20 | 85 °C | -25 °C | PLASTIC/EPOXY | BGA52,6X10,20 | 1.8 V | 52 | 有 | EAR99 | 8542.32.00.71 | 260 | unknown | 40 | 不合格 | OTHER | 存储器电路 | FLASH+PSRAM | |||||||||||||||||||||||||||||||||||||
![]() | TC528267J-70 | Toshiba America Electronic Components | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | TOSHIBA CORP | SOJ | 70 ns | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | SOJ | RECTANGULAR | 小概要 | 5 V | 40 | Obsolete | RAS ONLY/CAS BEFORE RAS/HIDDEN/AUTO REFRESH | DUAL | J BEND | 1 | 1.27 mm | unknown | 40 | R-PDSO-J40 | 不合格 | 5.5 V | COMMERCIAL | 4.5 V | 2 | ASYNCHRONOUS | 256KX8 | 3-STATE | 3.7 mm | 8 | 2097152 bit | 视频DRAM | 512 | FAST EDO AND PIPELINED PAGE | 26.04 mm | 10.16 mm | |||||||||||||||||||
![]() | S71VS256RD0ZHE400 | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SPANSION INC | BGA | TFBGA, | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 56 | 有 | EAR99 | PSRAM IS ORGANIZED AS 8M X 16 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.5 mm | unknown | 40 | 56 | R-PBGA-B56 | 不合格 | 1.95 V | OTHER | 1.7 V | SYNCHRONOUS | 16MX16 | 1.2 mm | 16 | 268435456 bit | 存储器电路 | 9.2 mm | 8 mm | |||||||||||||||||
![]() | SST32HF324C-70-4C-LBKE | Silicon Storage Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SILICON STORAGE TECHNOLOGY INC | BGA | LBGA, | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | 48 | 有 | e1 | 有 | EAR99 | 锡银铜 | STATIC RAM IS ORGANIZED AS 256K X 16 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 1 mm | unknown | 48 | R-PBGA-B48 | 不合格 | 3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 2MX16 | 1.4 mm | 16 | 33554432 bit | 存储器电路 | 12 mm | 10 mm | |||||||||||||||||
![]() | S72WS256NEEBFWUB0 | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SPANSION INC | BGA | LFBGA, | 3 | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 1.8 V | 137 | 有 | e1 | EAR99 | 锡银铜 | MOBILE SDRAM IS ORGANIZED AS 4M X 16BIT X 4 BANKS; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 40 | 137 | R-PBGA-B137 | 不合格 | 1.95 V | OTHER | 1.7 V | ASYNCHRONOUS | 16MX16 | 1.4 mm | 16 | 268435456 bit | 存储器电路 | 12 mm | 9 mm | ||||||||||||||
![]() | AM27C020-70PC | Cypress Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | CYPRESS SEMICONDUCTOR CORP | 活跃 | compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S71GL064NA0BHW0F0 | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | SPANSION INC | 有 | EAR99 | 8542.32.00.71 | 260 | unknown | 40 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S71WS256NC0BFWAP0 | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SPANSION INC | BGA | 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84 | 80 ns | 3 | 16777216 words | 16000000 | TFBGA | BGA84,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | PLASTIC/EPOXY | -25 °C | 85 °C | 84 | 有 | e1 | EAR99 | 锡银铜 | PSRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 40 | 84 | R-PBGA-B84 | 不合格 | 1.95 V | OTHER | 1.7 V | ASYNCHRONOUS | 0.054 mA | 16MX16 | 1.2 mm | 16 | 0.00007 A | 268435456 bit | 存储器电路 | FLASH+PSRAM | 11.6 mm | 8 mm | |||||||||
![]() | S71WS256NC0BFWAP0 | AMD | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 活跃 | ADVANCED MICRO DEVICES INC | FBGA, BGA84,10X12,32 | 80 ns | 85 °C | -25 °C | PLASTIC/EPOXY | FBGA | BGA84,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | 1.8 V | 84 | 有 | EAR99 | 8542.32.00.71 | BOTTOM | BALL | 0.8 mm | compliant | R-PBGA-B84 | 不合格 | OTHER | 0.066 mA | 0.00004 A | 存储器电路 | FLASH+PSRAM | |||||||||||||||||||||||||||||
![]() | SAA4955TJ | NXP Semiconductors | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | NXP SEMICONDUCTORS | SOJ | SOJ, SOJ40,.44 | 21 ns | 245772 words | 245772 | 70 °C | PLASTIC/EPOXY | SOJ | SOJ40,.44 | RECTANGULAR | 小概要 | 3.3 V | 40 | Obsolete | e3 | EAR99 | TIN | IT ALSO REQUIRES 3 TO 5.5V SUPPLY | 8542.32.00.71 | DUAL | J BEND | 1 | 1.27 mm | compliant | 40 | R-PDSO-J40 | 不合格 | 3.6 V | COMMERCIAL | 3 V | SYNCHRONOUS | 0.07 mA | 245772X12 | 12 | 0.01 A | 2949264 bit | 存储器电路 | ||||||||||||||||||
![]() | XC17S05PDG8I | AMD Xilinx | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | XILINX INC | DIP | DIP, | 1 | 53984 words | 53984 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | 5 V | 8 | 有 | e3 | 有 | EAR99 | Matte Tin (Sn) | 8542.32.00.71 | DUAL | THROUGH-HOLE | 250 | 1 | 2.54 mm | compliant | 30 | 8 | R-PDIP-T8 | 不合格 | 5.5 V | INDUSTRIAL | 4.5 V | SYNCHRONOUS | 53984X1 | 4.5974 mm | 1 | 53984 bit | 存储器电路 | 9.3599 mm | 7.62 mm | ||||||||||||||
![]() | PF38F4050M0Y1Q0 | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | NUMONYX | BGA | TFBGA, | 67108864 words | 64000000 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 88 | Obsolete | EAR99 | FLASH IS ALSO ORGANIZED AS 32M X 16 AND 64M X 16, PSEUDO SRAM IS ORGANIZED AS 4M X 16 OR 8M X 16 | 8542.32.00.71 | BOTTOM | BALL | 未说明 | 1 | 0.8 mm | unknown | 未说明 | 88 | R-PBGA-B88 | 不合格 | 1.95 V | 1.7 V | SYNCHRONOUS | 64MX16 | 1.2 mm | 16 | 1073741824 bit | 存储器电路 | 10 mm | 8 mm | |||||||||||||||||||||
![]() | PF38F4050M0Y1Q0 | Intel Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | INTEL CORP | BGA | TFBGA, BGA107,9X12,32 | 70 ns | 3 | 67108864 words | 64000000 | PLASTIC/EPOXY | TFBGA | BGA107,9X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 88 | 有 | e1 | EAR99 | 锡银铜 | FLASH IS ALSO ORGANIZED AS 32M X 16 AND 64M X 16, PSEUDO SRAM IS ORGANIZED AS 4M X 16 OR 8M X 16 | 8542.32.00.71 | BOTTOM | BALL | 1 | 0.8 mm | compliant | 88 | R-PBGA-B88 | 不合格 | 1.95 V | 1.7 V | SYNCHRONOUS | 64MX16 | 1.2 mm | 16 | 0.00025 A | 1073741824 bit | 存储器电路 | FLASH+PSRAM | 10 mm | 8 mm |