类别是'晶体管 - FET，MOSFET - 单个'
晶体管 - FET，MOSFET - 单个 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 电压 | 元素配置 | 电流 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)（最大值） | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | Vgs（最大值） | 极性/通道类型 | 下降时间（典型值） | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级（Eas） | 场效应管技术 | 恢复时间 | 最大结点温度（Tj） | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 环境温度范围高 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||
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 | 2N7002LT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 5V 10V | 1 | 225mW Ta | 40 ns | ACTIVE (Last Updated: 4 days ago) | Tin | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | YES | 3 | SILICON | 115mA Tc | -55°C~150°C TJ | Cut Tape (CT) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 7.5Ohm | 60V | DUAL | 鸥翼 | 115mA | 3 | 1 | Single | 增强型MOSFET | 225mW | 20 ns | N-Channel | SWITCHING | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 无卤素 | 50pF @ 25V | ±20V | 115mA | 1V | 20V | 60V | 150°C | 2.5 V | 5 pF | 1.11mm | 3.04mm | 1.4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
 | IRLR7843TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 4.5V 10V | 1 | 140W Tc | 34 ns | Tin | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | 161A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2008 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 2 | EAR99 | 3.3MOhm | 30V | 鸥翼 | 260 | 161A | 30 | R-PSSO-G2 | Single | 增强型MOSFET | 140W | DRAIN | 25 ns | N-Channel | SWITCHING | 3.3m Ω @ 15A, 10V | 2.3V @ 250μA | 4380pF @ 15V | 50nC @ 4.5V | 42ns | ±20V | 19 ns | 161A | 2.3V | TO-252AA | 20V | 30V | 620A | 59 ns | 2.3 V | 2.2606mm | 6.7056mm | 6.22mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
 | NTA4153NT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 1.5V 4.5V | 1 | 300mW Tj | 25 ns | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | SC-75, SOT-416 | YES | 3 | SILICON | 915mA Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 127mOhm | Tin (Sn) | 20V | DUAL | 鸥翼 | 915mA | 3 | Single | 增强型MOSFET | 300mW | 3.7 ns | N-Channel | SWITCHING | 230m Ω @ 600mA, 4.5V | 1.1V @ 250μA | 110pF @ 16V | 1.82nC @ 4.5V | 4.4ns | ±6V | 4.4 ns | 915mA | 760mV | 6V | 20V | 760 mV | 800μm | 800μm | 1.6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
 | CSD25303W1015 | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1.8V 4.5V | 1 | 1.5W Ta | 11.3 ns | 表面贴装 | 表面贴装 | 6-UFBGA, DSBGA | 6 | SILICON | 3A Tc | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | no | Obsolete | 1 (Unlimited) | 6 | EAR99 | BOTTOM | BALL | CSD25303 | 6 | Single | 增强型MOSFET | 1.5W | 3.9 ns | P-Channel | SWITCHING | 58m Ω @ 1.5A, 4.5V | 1V @ 250μA | 435pF @ 10V | 4.3nC @ 4.5V | 8.6ns | 20V | ±8V | 7.8 ns | 3A | 8V | 3A | 0.092Ohm | -20V | 无 | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SI4108DY-T1-GE3 | Vishay Siliconix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1 | 23 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 20.5A Tc | Cut Tape (CT) | 2017 | TrenchFET® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 150°C | -55°C | 7.8W | DUAL | 鸥翼 | 260 | 40 | 8 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | 7.8W | N-Channel | SWITCHING | 9.8m Ω @ 13.8A, 10V | 4V @ 250μA | 2100pF @ 38V | 54nC @ 10V | 11ns | 9 ns | 20.5A | MS-012AA | 20V | 75V | 60A | 51.2 mJ | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | FDB24AN06LA0 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5V 10V | 75W Tc | 28 ns | 表面贴装 | 表面贴装 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | 7.8A Ta 40A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2004 | PowerTrench® | Obsolete | 1 (Unlimited) | 175°C | -55°C | 60V | 36A | Single | 75W | N-Channel | 19mOhm @ 40A, 10V | 3V @ 250μA | 1850pF @ 25V | 21nC @ 5V | 101ns | 60V | ±20V | 49 ns | 40A | 20V | 60V | 1.85nF | 20mOhm | 19 mΩ | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AON6562 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4.5V 10V | 6W Ta 25W Tc | 表面贴装 | 8-VDFN Exposed Pad | 29A Ta 32A Tc | -55°C~150°C TJ | Tape & Reel (TR) | AlphaMOS | Obsolete | 1 (Unlimited) | N-Channel | 5m Ω @ 20A, 10V | 2.4V @ 250μA | 1550pF @ 15V | 33nC @ 10V | 30V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SIR774DP-T1-GE3 | Vishay Siliconix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1 | 150°C | 33 ns | YES | SILICON | 4.5V 10V | Tape & Reel (TR) | 2017 | Obsolete | 1 (Unlimited) | 5 | EAR99 | 62.5W | DUAL | C 弯管 | 未说明 | 未说明 | 8 | R-XDSO-C5 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | 62.5W | DRAIN | SWITCHING | 10ns | 30V | ±20V | N-CHANNEL | 10 ns | 40A | 20V | 30V | 80A | 45 mJ | METAL-OXIDE SEMICONDUCTOR | 2.1mOhm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FDI2532 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6V 10V | 310W Tc | 通孔 | TO-262-3 Long Leads, I2Pak, TO-262AA | I2PAK (TO-262) | 8A Ta 79A Tc | -55°C~175°C TJ | Tube | 2002 | PowerTrench® | Obsolete | 1 (Unlimited) | N-Channel | 16mOhm @ 33A, 10V | 4V @ 250μA | 5870pF @ 25V | 107nC @ 10V | 150V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AOL1428 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4.5V 10V | 2.2W Ta 43W Tc | 表面贴装 | 表面贴装 | 3-PowerSMD, Flat Leads | 12.4A Ta 49A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2008 | Obsolete | 1 (Unlimited) | unknown | N-Channel | 9.5m Ω @ 20A, 10V | 2.5V @ 250μA | 1000pF @ 15V | 18nC @ 10V | 30V | ±20V | 49A | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AON6912ALS | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | 1 (Unlimited) | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | STW9NK90Z | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 160W Tc | 55 ns | ACTIVE (Last Updated: 8 months ago) | 通孔 | 通孔 | TO-247-3 | 3 | 9.071847g | SILICON | 8A Tc | -55°C~150°C TJ | Tube | SuperMESH™ | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 1.3Ohm | Tin (Sn) | 雪崩 额定 | 900V | 8A | STW9N | 3 | Single | 增强型MOSFET | 160W | 22 ns | N-Channel | SWITCHING | 1.3 Ω @ 3.6A, 10V | 4.5V @ 100μA | 2115pF @ 25V | 72nC @ 10V | 13ns | ±30V | 28 ns | 8A | TO-247AC | 30V | 8A | 900V | 220 mJ | 20.15mm | 15.75mm | 5.15mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
 | AO4722 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4.5V 10V | 1.7W Ta | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8.5A Ta | -55°C~150°C TJ | Cut Tape (CT) | 2011 | SRFET™ | Obsolete | 1 (Unlimited) | compliant | N-Channel | 14m Ω @ 11.6A, 10V | 2.5V @ 250μA | 1100pF @ 15V | 20nC @ 10V | 30V | ±20V | Schottky Diode (Body) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IRFP350PBF | Vishay Siliconix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 10V | 1 | 190W Tc | 87 ns | Tin | 通孔 | 通孔 | TO-247-3 | 3 | TO-247-3 | 38.000013g | 16A Tc | -55°C~150°C TJ | Tube | 2011 | 活跃 | 1 (Unlimited) | 300mOhm | 150°C | -55°C | 400V | 16A | 1 | 400V | Single | 16A | 190W | 16 ns | N-Channel | 300mOhm @ 9.6A, 10V | 4V @ 250μA | 2600pF @ 25V | 150nC @ 10V | 49ns | 400V | ±20V | 47 ns | 16A | 4V | 20V | 400V | 2.6nF | 570 ns | 300mOhm | 300 mΩ | 2 V | 20.7mm | 15.87mm | 5.31mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
 | IRFB4227PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 330W Tc | 21 ns | 通孔 | 通孔 | TO-220-3 | 3 | SILICON | 65A Tc | -40°C~175°C TJ | Tube | 2004 | HEXFET® | 活跃 | 1 (Unlimited) | 3 | 通孔 | EAR99 | 24MOhm | 1 | Single | 增强型MOSFET | 330W | DRAIN | 33 ns | N-Channel | SWITCHING | 24m Ω @ 46A, 10V | 5V @ 250μA | 4600pF @ 25V | 98nC @ 10V | 20ns | ±30V | 31 ns | 65A | 5V | TO-220AB | 30V | 200V | 260A | 200V | 150 ns | 175°C | 5 V | 19.8mm | 10.6426mm | 4.82mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
| FDD16AN08A0-F085 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6V 10V | 1 | 135W Tc | 32 ns | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | 260.37mg | SILICON | 9A Ta 50A Tc | -55°C~175°C TJ | Tape & Reel (TR) | Automotive, AEC-Q101, UltraFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 2 | Tin (Sn) | 鸥翼 | R-PSSO-G2 | Single | 增强型MOSFET | 135W | DRAIN | 8 ns | N-Channel | SWITCHING | 16m Ω @ 50A, 10V | 4V @ 250μA | 1874pF @ 25V | 47nC @ 10V | 54ns | ±20V | 22 ns | 50A | TO-252AA | 20V | 9A | 75V | 95 mJ | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK5015DPK-00#T0 | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10V | 150W Ta | 通孔 | TO-3P-3, SC-65-3 | 25A Ta | 150°C TJ | Tube | yes | 活跃 | EAR99 | 未说明 | 未说明 | 4 | N-Channel | 240m Ω @ 12.5A, 10V | 2600pF @ 25V | 66nC @ 10V | 500V | ±30V | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | TSM850N06CX RFG | Taiwan Semiconductor Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 25 Weeks | 4.5V 10V | 1.7W Tc | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3A Tc | -55°C~150°C TJ | Digi-Reel® | 活跃 | 1 (Unlimited) | 未说明 | 未说明 | N-Channel | 85m Ω @ 2.3A, 10V | 2.5V @ 250μA | 529pF @ 30V | 9.5nC @ 10V | 60V | ±20V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BSS138K | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 1.8V 2.5V | 1 | 350mW Ta | 60 ns | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | SOT-23-3 | 30mg | 220mA Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | 活跃 | 1 (Unlimited) | 1.6Ohm | 150°C | -55°C | BSS138 | Single | 350mW | 5 ns | N-Channel | 1.6Ohm @ 50mA, 5V | 1.2V @ 250μA | 58pF @ 25V | 2.4nC @ 10V | 5ns | 50V | ±12V | 35 ns | 220mA | 600mV | 12V | 50V | 58pF | 1.6Ohm | 1.6 Ω | 600 mV | 930μm | 2.92mm | 1.3mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | BSS138LT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 5V | 1 | 225mW Ta | 20 ns | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | YES | 3 | SILICON | 200mA Ta | -55°C~150°C TJ | Cut Tape (CT) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 3.5Ohm | 50V | DUAL | 鸥翼 | 260 | 200mA | 40 | 3 | Single | 增强型MOSFET | 225mW | 20 ns | N-Channel | SWITCHING | 3.5 Ω @ 200mA, 5V | 1.5V @ 1mA | 无卤素 | 50pF @ 25V | ±20V | 200mA | 1.5V | 20V | 0.2A | 50V | 1.5 V | 5 pF | 1.01mm | 3.04mm | 1.4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
 | DMG1012T-7 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 1.8V 4.5V | 1 | 280mW Ta | 26.7 ns | Tin | 表面贴装 | 表面贴装 | SOT-523 | 3 | SOT-523 | 2.012816mg | 630mA Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | 活跃 | 1 (Unlimited) | 400MOhm | 150°C | -55°C | 1 | Single | 280mW | 5.1 ns | N-Channel | 400mOhm @ 600mA, 4.5V | 1V @ 250μA | 60.67pF @ 16V | 0.74nC @ 4.5V | 7.4ns | 20V | ±6V | 12.3 ns | 630mA | 1V | 6V | 20V | 60.67pF | 300mOhm | 400 mΩ | 800μm | 1.7mm | 850μm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
 | 2N7002,215 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 10V | 1 | 830mW Ta | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | YES | 3 | SILICON | 300mA Ta | -65°C~150°C TJ | Tape & Reel (TR) | TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | 8541.21.00.95 | DUAL | 鸥翼 | 260 | 30 | 3 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | N-Channel | SWITCHING | 5 Ω @ 500mA, 10V | 2.5V @ 250μA | 50pF @ 10V | 60V | ±30V | 300mA | 5Ohm | 60V | 10 pF | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 2N7002-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 5V 10V | 1 | 360mW Ta | 20 ns | Tin | 表面贴装 | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | 1.437803g | SILICON | 115mA Tj | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 高输入阻抗 | DUAL | 鸥翼 | 260 | 40 | 1 | Single | 增强型MOSFET | 360mW | 20 ns | N-Channel | SWITCHING | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 50pF @ 25V | ±30V | 115mA | 30V | 60V | 150°C | 5 pF | 1.12mm | 2.92mm | 1.3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
| BSS138L | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 2.75V 5V | 1 | 350mW Ta | 20 ns | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | 30mg | SILICON | 200mA Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | DUAL | 鸥翼 | 260 | 40 | 3 | 不合格 | 1 | Single | 增强型MOSFET | 225mW | 20 ns | N-Channel | SWITCHING | 3.5 Ω @ 200mA, 5V | 1.5V @ 1mA | 50pF @ 25V | 2.4nC @ 10V | 1.8ns | ±20V | 5.1 ns | 200mA | 1.25V | 20V | 0.2A | 50V | 150°C | 5 pF | 1.11mm | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
| NVR5198NLT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 4.5V 10V | 900mW Ta | 13 ns | ACTIVE (Last Updated: 4 days ago) | Tin | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | YES | 3 | 1.7A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | 3 | 1 | Single | 1.5W | 5 ns | N-Channel | 155m Ω @ 1A, 10V | 2.5V @ 250μA | 无卤素 | 182pF @ 25V | 5.1nC @ 10V | 7ns | ±20V | 2 ns | 2.2A | 2.5V | 20V | 60V | 无 | 无SVHC | ROHS3 Compliant | 无铅 |