![IXFP34N65X2](https://static.esinoelec.com/200dimg/ixysintegratedcircuitsdivision-ixdi614ci-5223.jpg)
规格参数
- 类型参数全选
工厂交货时间
19 Weeks
底架
Through Hole
安装类型
Through Hole
包装/外壳
TO-220-3
34A Tc
10V
540W Tc
操作温度
-55°C~150°C TJ
包装
Tube
系列
HiPerFET™
已出版
2015
零件状态
Active
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
105m Ω @ 17A, 10V
不同 Id 时 Vgs(th)(最大值)
5.5V @ 2.5mA
输入电容(Ciss)(Max)@Vds
3330pF @ 25V
门极电荷(Qg)(最大)@Vgs
56nC @ 10V
漏源电压 (Vdss)
650V
Vgs(最大值)
±30V
连续放电电流(ID)
34A
RoHS状态
ROHS3 Compliant
相关型号
- 图片产品型号品牌MountPackage / CaseDrain to Source Voltage (Vdss)Continuous Drain Current (ID)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On,Min Rds On)Moisture Sensitivity Level (MSL)Technology
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IXFP34N65X2
Through Hole
TO-220-3
650V
34 A
34A (Tc)
10V
1 (Unlimited)
MOSFET (Metal Oxide)
-
Through Hole
TO-220-3
-
35 A
35A (Tc)
10V
1 (Unlimited)
MOSFET (Metal Oxide)
-
Through Hole
TO-220-3 Full Pack
-
38 A
38A (Tc)
10V
1 (Unlimited)
MOSFET (Metal Oxide)
-
Through Hole
TO-220-3 Full Pack
650V
32 A
32A (Tc)
10V
1 (Unlimited)
MOSFET (Metal Oxide)
-
Through Hole
TO-220-3 Full Pack
-
35 A
35A (Tc)
10V
1 (Unlimited)
MOSFET (Metal Oxide)
IXFP34N65X2 PDF数据手册
- 数据表 :