SVD1N60M
-
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
规格参数
- 类型参数全选
表面安装
NO
Yes
Contact Manufacturer
HANGZHOU SILAN MICROELECTRONICS CO LTD
1 A
1
150 °C
ECCN 代码
EAR99
Reach合规守则
compliant
配置
SINGLE
操作模式
ENHANCEMENT MODE
极性/通道类型
N-CHANNEL
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
28 W