
MBR400150CTR
Twin Tower
DIODE SCHOTTKY 150V 200A 2 TOWER
规格参数
- 类型参数全选
工厂交货时间
4 Weeks
底架
Chassis Mount
安装类型
Chassis Mount
包装/外壳
Twin Tower
二极管元件材料
SILICON
2
150°C
包装
Bulk
零件状态
Active
湿度敏感性等级(MSL)
1 (Unlimited)
终止次数
2
应用
POWER
端子位置
UPPER
终端形式
UNSPECIFIED
JESD-30代码
R-PUFM-X2
元素配置
Common Anode
速度
Fast Recovery =< 500ns, > 200mA (Io)
二极管类型
Schottky
反向泄漏电流@ Vr
3mA @ 150V
不同 If 时电压 - 正向 (Vf)
880mV @ 200A
工作温度 - 结点
-55°C~150°C
最大反向电压(DC)
150V
平均整流电流
200A
相位的数量
1
最大非代表Pk前进电流
3000A
二极管配置
1 Pair Common Anode
反向电流-最大值
3000μA
RoHS状态
RoHS Compliant
相关型号
- 图片产品型号品牌MountPackage / CaseTerminal FormMoisture Sensitivity Level (MSL)Mounting TypeDiode Element MaterialDiode TypeNumber of Elements
-
MBR400150CTR
Chassis Mount
Twin Tower
UNSPECIFIED
1 (Unlimited)
Chassis Mount
SILICON
Schottky
2
-
Chassis Mount
Powertap II
UNSPECIFIED
1 (Unlimited)
Chassis Mount
SILICON
Schottky
2
-
Chassis Mount
Three Tower
UNSPECIFIED
1 (Unlimited)
Chassis Mount
SILICON
Schottky
2
-
Chassis Mount, Through Hole
Twin Tower
UNSPECIFIED
1 (Unlimited)
Chassis Mount
SILICON
Schottky
2
-
Chassis Mount
Three Tower
UNSPECIFIED
1 (Unlimited)
Chassis Mount
SILICON
Schottky
2
MBR400150CTR PDF数据手册
- 数据表 :