包装/外壳

M135

4 V

10 W

NPN

+ 200 C

35

1.384415 oz

- 65 C

Through Hole

Advanced Semiconductor, Inc.

Advanced Semiconductor, Inc.

Details

18 V

包装

Tray

类型

RF Bipolar Power

子类别

Transistors

技术

Si

工作频率

150 MHz

产品类别

RF Bipolar Transistors

晶体管类型

Bipolar Power

连续集电极电流

1 A

产品类别

RF Bipolar Transistors