制造商是'Rochester Electronics'
Rochester Electronics 晶体管 - 特殊用途
(94)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 生命周期状态 | 底架 | 表面安装 | 引脚数 | 材料 | 房屋材料 | 质量 | 终端数量 | 晶体管元件材料 | 外壳材料 | 包装数量 | Capacitors series | Case - inch | Case - mm | Case/Package | Design Level | Gross Weight | Interaxial Distance | Kind of capacitor | Max Voltage | Operating Voltage Range | Piece Count | Switching cycles (electrical) | Transducer Type | Type of capacitor | 包装 | 容差 | JESD-609代码 | 无铅代码 | ECCN 代码 | 连接器类型 | 类型 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 颜色 | 附加功能 | 电容量 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 深度 | Reach合规守则 | 额定电流 | 频率 | 时间@峰值回流温度-最大值(s) | 引脚数量 | JESD-30代码 | 资历状况 | 接头数量 | 引线长度 | 电介质 | 极性 | 触点电阻 | 配置 | 绝缘电阻 | 最大额定电流 | 元素配置 | 二极管类型 | 操作模式 | 功率耗散 | 输出电流 | 箱体转运 | 接通延迟时间 | 正向电流 | 晶体管应用 | 增益带宽积 | 上升时间 | 漏源电压 (Vdss) | 正向电压 | 极性/通道类型 | 集电极发射器电压(VCEO) | 最大集电极电流 | 工作温度范围 | 连续放电电流(ID) | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最高频率 | 漏极-源极导通最大电阻 | 反向电压 | 转换频率 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 集电极基极电压(VCBO) | 发射极基极电压 (VEBO) | 最大结点温度(Tj) | 额定电压 | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 最高频段 | 饱和电流 | 通态电阻 | 功率增益-最小值(Gp) | 外壳直径 | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | 无铅 | ||||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | IRFD223 | Rochester Electronics LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | ROCHESTER ELECTRONICS LLC | 0.7 A | 1 | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | NO | 3 | SILICON | 无 | e0 | 无 | 锡铅 | DUAL | THROUGH-HOLE | 未说明 | unknown | 未说明 | R-PDIP-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | N-CHANNEL | 1.2 Ω | 150 V | METAL-OXIDE SEMICONDUCTOR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | RFL1N12L | Rochester Electronics LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | ROCHESTER ELECTRONICS LLC | 1 A | 1 | METAL | ROUND | CYLINDRICAL | NO | 3 | SILICON | 无 | e0 | 无 | 锡铅 | 逻辑电平兼容 | BOTTOM | WIRE | 未说明 | unknown | 未说明 | O-MBCY-W3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | TO-205AF | 1.9 Ω | 120 V | METAL-OXIDE SEMICONDUCTOR | 35 pF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | RFL1N10 | Rochester Electronics LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | ROCHESTER ELECTRONICS LLC | 1 A | 1 | METAL | ROUND | CYLINDRICAL | NO | 3 | SILICON | 无 | e0 | 无 | 锡铅 | BOTTOM | WIRE | 未说明 | unknown | 未说明 | O-MBCY-W3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | TO-205AF | 1.2 Ω | 100 V | METAL-OXIDE SEMICONDUCTOR | 25 pF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AUIRLR2908TRL | Rochester Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete (Last Updated: 4 years ago) | Compliant | 8541290080 | 36 ns | 表面贴装 | 3 | 3000 | DPAK | 1 | Tape & Reel (TR) | 175 °C | -55 °C | 120 W | 120 W | 12 ns | 95 ns | 80 V | 28 A | 16 V | 80 V | 1.89 nF | 175 °C | 22.5 mΩ | 28 mΩ | 28 mΩ | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FF100R12MT4 | Rochester Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 | Module | Compliant | 150 °C | -40 °C | Dual | 1.2 kV | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BAR6302WE6327 | Rochester Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 50 V | 表面贴装 | 80 | SC | Compliant | Switch | 2 Ω | 125 °C | -55 °C | 250 mW | 100 mA | 100 mA | Single | PIN - Single | 250 mW | 100 mA | 100 mA | 1.2 V | 50 V | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AUIRF1405ZS-7P | Rochester Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NRND (Last Updated: 4 years ago) | 表面贴装 | 50 | TO-263-7 | Compliant | 175 °C | -55 °C | 230 W | 230 W | 55 V | 120 A | 20 V | 5.36 nF | 175 °C | 4.9 mΩ | 4.9 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AUIRFR1010ZTRL | Rochester Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 42 ns | 表面贴装 | 3 | DPAK | Compliant | Tape & Reel (TR) | 175 °C | -55 °C | 140 W | 140 W | 17 ns | 76 ns | 55 V | 91 A | 20 V | 55 V | 2.84 nF | 7.5 mΩ | 无 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SPD15P10PG | Rochester Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 33 ns | 3 | TO-252-3 | Compliant | 175 °C | -55 °C | 128 W | Single | 128 W | 9.5 ns | 23 ns | 15 A | 20 V | -100 V | 1.28 nF | 240 mΩ | 240 mΩ | -3 V | 2.41 mm | 6.73 mm | 6.22 mm | 无SVHC | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FJP13007H1TU | Rochester Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 | 1 | Compliant | 400 V | 通孔 | 3 | 1.214 g | TO-220 | 400 V | 150 °C | -65 °C | 80 W | 8 A | 4 MHz | NPN | Single | 80 W | 4 MHz | 400 V | 8 A | 4 MHz | 4 MHz | 700 V | 9 V | 无 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FQP8N60C | Rochester Electronics LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | ROCHESTER ELECTRONICS LLC | TO-220AB | TO-220, 3 PIN | 7.5 A | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 90 dB | NO | ABS | 5 g | 3 | SILICON | 1 | 6.50 | 15±0.5 mm | 3...24 | piezoelectric | 有 | e3 | 有 | 哑光锡 | 快速切换 | SINGLE | THROUGH-HOLE | NOT APPLICABLE | unknown | NOT APPLICABLE | 3 | R-PSFM-T3 | COMMERCIAL | L - 8.5/ 9.0 mm | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | N-CHANNEL | -20...+45 °C | TO-220AB | 1.2 Ω | 30 A | 600 V | 230 mJ | METAL-OXIDE SEMICONDUCTOR | NOT APPLICABLE | 23 mm | 18.5 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FQPF12N60C | Rochester Electronics LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ROCHESTER ELECTRONICS LLC | TO-220AB | 不推荐 | 有 | EAR99 | unknown | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | HUF76121D3ST | Rochester Electronics LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ROCHESTER ELECTRONICS LLC | TO-252AA | TO-252AA, 3 PIN | 20 A | PLASTIC/EPOXY | RECTANGULAR | 小概要 | YES | 2 | SILICON | 1 | 活跃 | 有 | 未说明 | SINGLE | 鸥翼 | 未说明 | unknown | 未说明 | 4 | R-PSSO-G2 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | TO-252AA | 0.033 Ω | 30 V | METAL-OXIDE SEMICONDUCTOR | 未说明 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDS6898A | Rochester Electronics LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 活跃 | ROCHESTER ELECTRONICS LLC | SOT | SO-8 | 9.4 A | PLASTIC/EPOXY | RECTANGULAR | 小概要 | YES | 8 | SILICON | 2 | KGM | 1206 | 3216 | MLCC | ceramic | SMD | ±2% | e3 | 有 | 哑光锡 | 5.6nF | DUAL | 鸥翼 | 260 | unknown | 30 | 8 | R-PDSO-G8 | COMMERCIAL | C0G (NP0) | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | N-CHANNEL | 0.014 Ω | 38 A | 20 V | METAL-OXIDE SEMICONDUCTOR | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NDS331N | Rochester Electronics LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | ROCHESTER ELECTRONICS LLC | SOT | SUPERSOT-3 | SUPERSOT | 1.3 A | PLASTIC/EPOXY | RECTANGULAR | 小概要 | YES | 3 | SILICON | 1 | 有 | e3 | 有 | 哑光锡 | DUAL | 鸥翼 | 260 | unknown | 30 | 3 | R-PDSO-G3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | N-CHANNEL | 0.16 Ω | 20 V | METAL-OXIDE SEMICONDUCTOR | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDV305N | Rochester Electronics LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ROCHESTER ELECTRONICS LLC | 0.9 A | PLASTIC/EPOXY | RECTANGULAR | 小概要 | YES | 3 | SILICON | 1 | 活跃 | e3 | 有 | 哑光锡 | DUAL | 鸥翼 | 260 | unknown | 30 | R-PDSO-G3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | N-CHANNEL | 0.22 Ω | 20 V | METAL-OXIDE SEMICONDUCTOR | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FQB11N40CTM | Rochester Electronics LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 活跃 | ROCHESTER ELECTRONICS LLC | D2PAK | LEAD FREE, D2PAK-3 | 10.5 A | PLASTIC/EPOXY | RECTANGULAR | 小概要 | YES | 2 | SILICON | 1 | KGM | 0805 | 2012 | MLCC | ceramic | SMD | ±5% | e3 | 有 | Soldering Mat with Magnet | 哑光锡 | Blue | 快速切换 | 0.22µF | SINGLE | 鸥翼 | 245 | unknown | 30 | 3 | R-PSSO-G2 | COMMERCIAL | X7R | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | TO-263AB | 0.53 Ω | 42 A | 400 V | 360 mJ | METAL-OXIDE SEMICONDUCTOR | 1 | 450 mm | 300 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MMBF4416LT1G | Rochester Electronics LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | ROCHESTER ELECTRONICS LLC | SOT-23 | CASE 318-08, 3 PIN | CASE 318-08 | PLASTIC/EPOXY | RECTANGULAR | 小概要 | YES | 3 | SILICON | 1 | Beginner Kit | 75 | 有 | e3 | 有 | 哑光锡 | DUAL | 鸥翼 | 260 | unknown | 40 | 3 | R-PDSO-G3 | COMMERCIAL | SINGLE | DEPLETION MODE | AMPLIFIER | N-CHANNEL | TO-236AB | 30 V | JUNCTION | 0.8 pF | 超高频段 | 未说明 | 10 dB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NDP6020P | Rochester Electronics LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | ROCHESTER ELECTRONICS LLC | TO-220AB | TO-220, 3 PIN | 24 A | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | NO | 3 | SILICON | 1 | 有 | e3 | 有 | 哑光锡 | 逻辑电平兼容 | SINGLE | THROUGH-HOLE | NOT APPLICABLE | unknown | NOT APPLICABLE | 3 | R-PSFM-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | P-CHANNEL | TO-220AB | 0.05 Ω | 70 A | 20 V | METAL-OXIDE SEMICONDUCTOR | NOT APPLICABLE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRFD120 | Rochester Electronics LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ROCHESTER ELECTRONICS LLC | 1.3 A | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | 48 V | NO | 3 | SILICON | 1 | 活跃 | 3-pole microphone socket on panel | DUAL | THROUGH-HOLE | 26 mm | unknown | R-PDIP-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | 0.3 Ω | 100 V | METAL-OXIDE SEMICONDUCTOR | 32 | 26 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | HUF75545S3ST | Rochester Electronics LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 活跃 | ROCHESTER ELECTRONICS LLC | D2PAK | TO-263AB, 3 PIN | 75 A | PLASTIC/EPOXY | RECTANGULAR | 小概要 | 100 V | YES | 2 | SILICON | 1 | GCQ | 0201 | 0603 | MLCC | 20 V | 10000 min | ceramic | SMD | e3 | 有 | USB 3.1 Type-C | 哑光锡 | 2.6pF | SINGLE | 鸥翼 | 245 | unknown | 30 | 4 | R-PSSO-G2 | COMMERCIAL | 6 | C0G (NP0) | not more than 50 mOhm max | SINGLE WITH BUILT-IN DIODE | 100 MOhm min | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | -55…+85 °C | TO-263AB | 0.01 Ω | 80 V | METAL-OXIDE SEMICONDUCTOR | 5 (DC) V | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDMS8680 | Rochester Electronics LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | ROCHESTER ELECTRONICS LLC | SON | ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN | 14 A | PLASTIC/EPOXY | RECTANGULAR | 小概要 | YES | brush - graphite; conductor - copper; terminal - brass | 5 | SILICON | 1 | (D) - 26 mm | graphite brush for collector motor (with spring) | 未说明 | DUAL | FLAT | (A) - 16 mm | unknown | 8 | R-PDSO-F5 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | 0.007 Ω | 100 A | 30 V | 216 mJ | METAL-OXIDE SEMICONDUCTOR | (C) - 6.4 mm | (B) - 13.5 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NDT3055L | Rochester Electronics LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | ROCHESTER ELECTRONICS LLC | 4 A | PLASTIC/EPOXY | RECTANGULAR | 小概要 | YES | 4 | SILICON | 1 | 有 | e3 | 有 | 哑光锡 | 逻辑电平兼容 | DUAL | 鸥翼 | 260 | unknown | 30 | R-PDSO-G4 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | 0.1 Ω | 25 A | 60 V | METAL-OXIDE SEMICONDUCTOR | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NTD12N10T4G | Rochester Electronics LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | ROCHESTER ELECTRONICS LLC | LAED FREE, CASE 369C-01, DPAK-3 | CASE 369C-01 | 12 A | PLASTIC/EPOXY | RECTANGULAR | 小概要 | YES | 2 | SILICON | 1 | 有 | e3 | 有 | 哑光锡 | SINGLE | 鸥翼 | 未说明 | unknown | 未说明 | 3 | R-PSSO-G2 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | 0.165 Ω | 36 A | 100 V | 75 mJ | METAL-OXIDE SEMICONDUCTOR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NDS0610 | Rochester Electronics LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ROCHESTER ELECTRONICS LLC | SOT-23 | SOT-23, 3 PIN | 0.12 A | PLASTIC/EPOXY | RECTANGULAR | 小概要 | YES | 3 | SILICON | 1 | 活跃 | e3 | 有 | 哑光锡 | DUAL | 鸥翼 | 260 | unknown | 30 | 3 | R-PDSO-G3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | P-CHANNEL | 10 Ω | 60 V | METAL-OXIDE SEMICONDUCTOR | 5 pF | 1 |