制造商是'Rochester Electronics'
Rochester Electronics 晶体管 - FET,MOSFET - 阵列
(262)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 安装类型 | 包装/外壳 | 表面安装 | 供应商器件包装 | 晶体管元件材料 | 厂商 | 操作温度 | 包装 | 系列 | 尺寸/尺寸 | 容差 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 温度系数 | 类型 | 电阻 | 端子表面处理 | 组成 | 功率(瓦特) | 附加功能 | 额定电流 | 端子位置 | 终端形式 | 屏蔽/屏蔽 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 引脚数量 | JESD-30代码 | 资历状况 | 失败率 | 配置 | 电感,电感 | 直流电阻(DCR) | 操作模式 | 箱体转运 | 功率 - 最大 | 谐振@频率 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 漏源电压 (Vdss) | 极性/通道类型 | JEDEC-95代码 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 脉冲漏极电流-最大值(IDM) | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 场效应管特性 | 反馈上限-最大值 (Crss) | 特征 | 座位高度(最大) | RoHS状态 | 评级结果 | |||||||||
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![]() | BUK6209-30C-NEX | Rochester Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | Tape & Reel (TR) | 100 kHz | 活跃 | - | 62A | Nonstandard | - | 中央技术 | - | -55°C ~ 105°C | CTSFW1890F | 0.720 L x 0.717 W (18.30mm x 18.20mm) | ±20% | Wirewound | 34.5 A | Shielded | 1.3 µH | 1.03mOhm Max | - | - | 0.362 (9.20mm) | - | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ECH8667-TL-HX-SA | Rochester Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ADP3415LRMZ-REEL-AD | Rochester Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 2SK1284-Z-E1-AZ | Rochester Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | 2512 (6432 Metric) | 2512 | Vishay Dale | Bulk | -65°C ~ 170°C | WSL | 0.250 L x 0.125 W (6.35mm x 3.18mm) | ±1% | 2 | ±75ppm/°C | 14 mOhms | 金属元素 | 1W | - | Automotive AEC-Q200, Current Sense, Moisture Resistant, Pulse Withstanding | 0.035 (0.89mm) | AEC-Q200 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FX6ASJ-2-T13B00 | Rochester Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | EFC4601-M-TR-ON | Rochester Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 2SK4085LS-CB11-SY | Rochester Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MAX8791AGTA+T | Rochester Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Non-Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | USB10H | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 2 | SOT-23-6 Thin, TSOT-23-6 | YES | SILICON | 1.9A | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | yes | Obsolete | 1 (Unlimited) | 6 | 未说明 | 鸥翼 | 未说明 | unknown | 未说明 | 6 | R-PDSO-G6 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 700mW | 2 P-Channel (Dual) | SWITCHING | 170m Ω @ 1.9A, 4.5V | 1.5V @ 250μA | 441pF @ 10V | 4.2nC @ 4.5V | 20V | 1.9A | 0.17Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||
![]() | BSL806NL6327HTSA1 | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP-6-6 | 2.3A | -55°C~150°C TJ | Tape & Reel (TR) | OptiMOS™ | Obsolete | 1 (Unlimited) | 500mW | 2 N-Channel (Dual) | 57mOhm @ 2.3A, 2.5V | 750mV @ 11μA | 259pF @ 10V | 1.7nC @ 2.5V | 20V | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDW2501NZ | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 2 | 8-TSSOP (0.173, 4.40mm Width) | YES | SILICON | 5.5A | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | TIN | 鸥翼 | 260 | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 600mW | 2 N-Channel (Dual) | SWITCHING | 18m Ω @ 5.5A, 4.5V | 1.5V @ 250μA | 1286pF @ 10V | 17nC @ 4.5V | 20V | MO-153AA | 5.5A | 0.018Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||
![]() | NTHD4502NT1 | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 2 | 8-SMD, Flat Lead | YES | SILICON | 2.2A | -55°C~150°C TJ | Tape & Reel (TR) | e0 | yes | Obsolete | 1 (Unlimited) | 8 | 锡铅 | C 弯管 | 240 | 30 | 8 | R-XDSO-C8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 640mW | 2 N-Channel (Dual) | SWITCHING | 85m Ω @ 2.9A, 10V | 3V @ 250μA | 140pF @ 15V | 7nC @ 10V | 30V | 2.2A | 0.085Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 25 pF | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||
![]() | NTLJD3181PZTAG | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 2 | 6-WDFN Exposed Pad | YES | SILICON | 2.2A | -55°C~150°C TJ | Tape & Reel (TR) | e3 | yes | Obsolete | 1 (Unlimited) | 6 | 哑光锡 | 无铅 | 未说明 | 未说明 | 6 | S-PDSO-N6 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 710mW | 2 P-Channel (Dual) | SWITCHING | 100m Ω @ 2A, 4.5V | 1V @ 250μA | 450pF @ 10V | 7.8nC @ 4.5V | 20V | 3.2A | 0.1Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||
![]() | NTLJD2104PTAG | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 2 | 6-WDFN Exposed Pad | YES | SILICON | 2.4A | -55°C~150°C TJ | Tape & Reel (TR) | e3 | yes | Obsolete | 1 (Unlimited) | 6 | 哑光锡 | 无铅 | 未说明 | unknown | 未说明 | 6 | S-XDSO-N6 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 700mW | 2 P-Channel (Dual) | SWITCHING | 90m Ω @ 3A, 4.5V | 800mV @ 250μA | 467pF @ 6V | 8nC @ 4.5V | 12V | 2.4A | 0.12Ohm | 12V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||
![]() | NTMD3N08LR2 | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 1 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 2.3A | Tape & Reel (TR) | e0 | no | Obsolete | 1 (Unlimited) | 8 | 锡铅 | ULTRA-LOW RESISTANCE | 鸥翼 | 240 | 30 | 8 | R-PDSO-G8 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | 3.1W | 2 N-Channel (Dual) | SWITCHING | 215m Ω @ 2.5A, 10V | 3V @ 250μA | 480pF @ 25V | 15nC @ 10V | 80V | 2.3A | 0.215Ohm | 25A | 80V | 25 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||
![]() | FDJ1027P | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 2 | SC75-6 FLMP | YES | SILICON | 2.8A | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e4 | yes | Obsolete | 1 (Unlimited) | 6 | 镍钯金 | FLAT | 未说明 | unknown | 未说明 | 6 | R-PDSO-F6 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 900mW | 2 P-Channel (Dual) | SWITCHING | 160m Ω @ 2.8A, 4.5V | 1.5V @ 250μA | 290pF @ 10V | 4nC @ 4.5V | 20V | 2.8A | 0.16Ohm | 12A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||
![]() | FDW2516NZ | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 2 | 8-TSSOP (0.173, 4.40mm Width) | YES | SILICON | 5.8A | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | TIN | 鸥翼 | 260 | unknown | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 1.1W | 2 N-Channel (Dual) | SWITCHING | 30m Ω @ 5.8A, 4.5V | 1.5V @ 250μA | 745pF @ 10V | 12nC @ 5V | 20V | 5.8A | 0.03Ohm | 20A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||
![]() | FDJ1028N | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 2 | SC75-6 FLMP | YES | SILICON | 3.2A | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e4 | yes | Obsolete | 1 (Unlimited) | 6 | 镍钯金 | FLAT | 未说明 | unknown | 未说明 | 6 | R-PDSO-F6 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 1.5W | 2 N-Channel (Dual) | SWITCHING | 90m Ω @ 3.2A, 4.5V | 1.5V @ 250μA | 200pF @ 10V | 3nC @ 4.5V | 20V | 3.2A | 0.09Ohm | 12A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||
![]() | FDS8962C | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 2 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 7A 5A | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | 哑光锡 | DUAL | 鸥翼 | 260 | 30 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 900mW | N and P-Channel | SWITCHING | 30m Ω @ 7A, 10V | 3V @ 250μA | 575pF @ 15V | 26nC @ 10V | 30V | N-CHANNEL AND P-CHANNEL | 7A | 0.03Ohm | 20A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||
![]() | NTQD6968NR2G | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 2 | 8-TSSOP (0.173, 4.40mm Width) | YES | SILICON | 6.2A | -55°C~150°C TJ | Tape & Reel (TR) | e3 | no | Obsolete | 3 (168 Hours) | 8 | 哑光锡 | 逻辑电平兼容 | 鸥翼 | 260 | unknown | 40 | 8 | R-PDSO-G8 | COMMERCIAL | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 1.39W | 2 N-Channel (Dual) | SWITCHING | 22m Ω @ 7A, 4.5V | 1.2V @ 250μA | 630pF @ 16V | 17nC @ 4.5V | 20V | 6.2A | 0.03Ohm | 18A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||
![]() | FDS4895C | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 2 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 5.5A 4.4A | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | 哑光锡 | DUAL | 鸥翼 | 260 | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 900mW | N and P-Channel | SWITCHING | 39m Ω @ 5.5A, 10V | 5V @ 250μA | 410pF @ 20V | 10nC @ 10V | 40V | N-CHANNEL AND P-CHANNEL | 5.5A | 0.039Ohm | 20A | 40V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||
![]() | FDC6322C | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 220mA 460mA | -55°C~150°C TJ | Tape & Reel (TR) | yes | Obsolete | 1 (Unlimited) | unknown | 6 | 700mW | N and P-Channel | 4 Ω @ 400mA, 4.5V | 1.5V @ 250μA | 9.5pF @ 10V | 0.7nC @ 4.5V | 25V | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDS6812A | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 2 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 6.7A | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | 哑光锡 | 鸥翼 | 260 | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 900mW | 2 N-Channel (Dual) | SWITCHING | 22m Ω @ 6.7A, 4.5V | 1.5V @ 250μA | 1082pF @ 10V | 19nC @ 4.5V | 20V | 6.7A | 0.22Ohm | 35A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||
![]() | NDS9947 | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 2 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 3.5A | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | 哑光锡 | 鸥翼 | 260 | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 900mW | 2 P-Channel (Dual) | SWITCHING | 100m Ω @ 3.5A, 10V | 3V @ 250μA | 542pF @ 10V | 13nC @ 10V | 20V | 3.5A | 0.1Ohm | 15A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||
![]() | FDW2501N | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 2 | 8-TSSOP (0.173, 4.40mm Width) | YES | SILICON | 6A | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | TIN | 鸥翼 | 260 | unknown | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 600mW | 2 N-Channel (Dual) | SWITCHING | 18m Ω @ 6A, 4.5V | 1.5V @ 250μA | 1290pF @ 10V | 17nC @ 4.5V | 20V | 6A | 0.018Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant |