制造商是'NXP'
NXP 晶体管 - 双极（BJT）- 单，预偏置
(327)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 安装类型 | 包装/外壳 | 表面安装 | 供应商器件包装 | 晶体管元件材料 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | 尺寸/尺寸 | 容差 | JESD-609代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 温度系数 | 类型 | 电阻 | 端子表面处理 | 组成 | 功率(瓦特) | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 频率 | 时间@峰值回流温度-最大值(s) | 频率稳定性 | 基本部件号 | 输出量 | 引脚数量 | JESD-30代码 | 功能 | 基本谐振器 | 最大电流源 | 资历状况 | 失败率 | 电流 - 电源（禁用）（最大值） | 配置 | 界面 | 扩频带宽 | 功率 - 最大 | 数据率 | 晶体管应用 | 极性/通道类型 | 晶体管类型 | 最小直流增益（hFE）@ Ic, Vce | 最大集极截止电流 | 不同 Ib, Ic 时 Vce 饱和度（最大值） | 电压 - 集射极击穿（最大值） | 使用地区 | 频率转换 | 最大耗散功率(Abs) | 绝对牵引范围 (APR) | 电阻基(R1) | 连续集电极电流 | 电阻-发射极基极(R2) | VCEsat-最大值 | 集电极-基极电容-最大值 | 环境耗散-最大值 | 特征 | 数据格式 | 座位高度(最大) | RoHS状态 | 评级结果 | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | PDTC114EK,115 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 1 | TO-236-3, SC-59, SOT-23-3 | YES | SILICON | 100mA | Tape & Reel (TR) | 2004 | e3 | Obsolete | 1 (Unlimited) | 3 | EAR99 | TIN | BUILT-IN BIAS RESISTOR RATIO IS 1 | 8541.21.00.95 | DUAL | 鸥翼 | 未说明 | 未说明 | PDTC114 | 3 | R-PDSO-G3 | 不合格 | SINGLE WITH BUILT-IN RESISTOR | 250mW | SWITCHING | NPN | NPN - Pre-Biased | 30 @ 5mA 5V | 1μA | 150mV @ 500μA, 10mA | 50V | 0.25W | 10 k Ω | 10 k Ω | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||
| PDTC123EE,115 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | SC-75, SOT-416 | 100mA | Tape & Reel (TR) | 2003 | Obsolete | 1 (Unlimited) | EAR99 | PDTC123 | 3 | 150mW | NPN - Pre-Biased | 30 @ 20mA 5V | 1μA | 150mV @ 500μA, 10mA | 50V | 2.2 k Ω | 2.2 k Ω | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTB143EQA147 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 活跃 | 500 mA | 3-XDFN Exposed Pad | DFN1010D-3 | NXP USA Inc. | Bulk | PDTB143 | 325 mW | PNP - Pre-Biased | 60 @ 50mA, 5V | 500nA | 100mV @ 2.5mA, 50mA | 50 V | 150 MHz | 4.7 kOhms | 4.7 kOhms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC144WE,115 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 1 | 150°C | SC-75, SOT-416 | YES | SILICON | 100mA | Tape & Reel (TR) | 2003 | e3 | Obsolete | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | BUILT-IN BIAS RESISTOR RATIO IS 0.47 | DUAL | 鸥翼 | 260 | 40 | PDTC144 | 3 | R-PDSO-G3 | 不合格 | SINGLE WITH BUILT-IN RESISTOR | 150mW | SWITCHING | NPN | NPN - Pre-Biased | 60 @ 5mA 5V | 1μA | 150mV @ 500μA, 10mA | 50V | 0.15W | 47 k Ω | 22 k Ω | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||
| PDTC143XE,115 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 1 | 150°C | SC-75, SOT-416 | YES | SILICON | 100mA | Tape & Reel (TR) | 2011 | e3 | Obsolete | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | BUILT-IN BIAS RESISTOR RATIO IS 2.1 | 8541.21.00.95 | DUAL | 鸥翼 | 260 | 40 | DTC143 | 3 | R-PDSO-G3 | 不合格 | SINGLE WITH BUILT-IN RESISTOR | 150mW | SWITCHING | NPN | NPN - Pre-Biased | 50 @ 10mA 5V | 1μA | 100mV @ 500μA, 10mA | 50V | 0.15W | 4.7 k Ω | 10 k Ω | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||
| PDTC143ZE,115 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 1 | 150°C | SC-75, SOT-416 | YES | SILICON | 100mA | Tape & Reel (TR) | 2003 | e3 | Obsolete | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | BUILT-IN BIAS RESISTOR RATIO IS 10 | 8541.21.00.95 | DUAL | 鸥翼 | 260 | 40 | DTC143 | 3 | R-PDSO-G3 | 不合格 | SINGLE WITH BUILT-IN RESISTOR | 150mW | SWITCHING | NPN | NPN - Pre-Biased | 100 @ 10mA 5V | 1μA | 100mV @ 250μA, 5mA | 50V | 0.15W | 4.7 k Ω | 47 k Ω | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||
| PDTA113EE,115 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 1 | 150°C | SC-75, SOT-416 | YES | SILICON | 100mA | Tape & Reel (TR) | 2009 | e3 | Obsolete | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | BUILT IN BIAS RESISTOR RATIO IS 1 | DUAL | 鸥翼 | 260 | 40 | PDTA113 | 3 | R-PDSO-G3 | 不合格 | SINGLE WITH BUILT-IN RESISTOR | 150mW | SWITCHING | PNP | PNP - Pre-Biased | 30 @ 40mA 5V | 1μA | 150mV @ 1.5mA, 30mA | 50V | 0.15W | 1 k Ω | 1 k Ω | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||
| PDTA114TE,115 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 1 | 150°C | SC-75, SOT-416 | YES | SILICON | 100mA | Tape & Reel (TR) | 2007 | e3 | Obsolete | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | 内置偏置电阻 | 8541.21.00.95 | DUAL | 鸥翼 | 260 | 40 | PDTA114 | 3 | R-PDSO-G3 | 不合格 | SINGLE WITH BUILT-IN RESISTOR | 150mW | SWITCHING | PNP | PNP - Pre-Biased | 200 @ 1mA 5V | 1μA | 150mV @ 500μA, 10mA | 50V | 0.15W | 10 k Ω | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||
| PDTC144TE,115 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 1 | 150°C | SC-75, SOT-416 | YES | SILICON | 100mA | Tape & Reel (TR) | 2009 | e3 | Obsolete | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | BUILT-IN BIAS RESISTOR | DUAL | 鸥翼 | 260 | 40 | PDTC144 | 3 | R-PDSO-G3 | 不合格 | SINGLE WITH BUILT-IN RESISTOR | 150mW | SWITCHING | NPN | NPN - Pre-Biased | 100 @ 1mA 5V | 1μA | 150mV @ 500μA, 10mA | 50V | 0.15W | 47 k Ω | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||
| PDTA114EE,115 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 1 | 150°C | SC-75, SOT-416 | YES | SILICON | 100mA | Tape & Reel (TR) | 2009 | e3 | Obsolete | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | BUILT-IN BIAS RESISTOR RATIO IS 1 | 8541.21.00.95 | DUAL | 鸥翼 | 260 | 40 | PDTA114 | 3 | R-PDSO-G3 | 不合格 | SINGLE WITH BUILT-IN RESISTOR | 150mW | SWITCHING | PNP | PNP - Pre-Biased | 30 @ 5mA 5V | 100nA ICBO | 150mV @ 500μA, 10mA | 50V | 180MHz | 0.15W | 10 k Ω | 10 k Ω | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
| PDTC143TE,115 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 1 | 150°C | SC-75, SOT-416 | YES | SILICON | 100mA | Tape & Reel (TR) | 2003 | e3 | Obsolete | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | BUILT-IN BIAS RESISTOR | DUAL | 鸥翼 | 260 | 40 | DTC143 | 3 | R-PDSO-G3 | 不合格 | SINGLE WITH BUILT-IN RESISTOR | 150mW | SWITCHING | NPN | NPN - Pre-Biased | 200 @ 1mA 5V | 1μA | 100mV @ 250μA, 5mA | 50V | 0.15W | 4.7 k Ω | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||
| PDTC123JE,115 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 1 | 150°C | SC-75, SOT-416 | YES | SILICON | 100mA | Tape & Reel (TR) | 2003 | e3 | Obsolete | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | BUILT-IN BIAS RESISTOR RATIO IS 21.36 | 8541.21.00.95 | DUAL | 鸥翼 | 260 | 40 | PDTC123 | 3 | R-PDSO-G3 | 不合格 | SINGLE WITH BUILT-IN RESISTOR | 150mW | SWITCHING | NPN | NPN - Pre-Biased | 100 @ 10mA 5V | 1μA | 100mV @ 250μA, 5mA | 50V | 0.15W | 2.2 k Ω | 47 k Ω | 0.3 V | 3.5pF | 0.15W | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||
| PDTC124XE,115 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 1 | 150°C | SC-75, SOT-416 | YES | SILICON | 100mA | Tape & Reel (TR) | 2009 | e3 | Obsolete | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | BUILT-IN BIAS RESISTOR RATIO IS 2.14 | 8541.21.00.95 | DUAL | 鸥翼 | 260 | 40 | PDTC124 | 3 | R-PDSO-G3 | 不合格 | SINGLE WITH BUILT-IN RESISTOR | 150mW | SWITCHING | NPN | NPN - Pre-Biased | 80 @ 5mA 5V | 1μA | 150mV @ 500μA, 10mA | 50V | 0.15W | 22 k Ω | 47 k Ω | 0.3 V | 3.5pF | 0.15W | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||
| PDTC143EE,115 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 1 | 150°C | SC-75, SOT-416 | YES | SILICON | 100mA | Tape & Reel (TR) | 2003 | e3 | Obsolete | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | BUILT-IN BIAS RESISTOR RATIO IS 1 | 8541.21.00.95 | DUAL | 鸥翼 | 260 | 40 | DTC143 | 3 | R-PDSO-G3 | 不合格 | SINGLE WITH BUILT-IN RESISTOR | 150mW | SWITCHING | NPN | NPN - Pre-Biased | 30 @ 10mA 5V | 1μA | 150mV @ 500μA, 10mA | 50V | 0.15W | 4.7 k Ω | 4.7 k Ω | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||
| PDTA124TU，115 | NXP | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Bulk | PDTA12 | 活跃 | NXP USA Inc. | Non-Compliant | * | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTB123EQAZ | NXP | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | NPN | PEI-Genesis | Bulk | * | 500 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTD114EQAZ | NXP | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 活跃 | 6-SMD, No Lead | Suntsu Electronics, Inc. | Bulk | -20°C ~ 70°C | SXO53L | 0.197 L x 0.126 W (5.00mm x 3.20mm) | XO (Standard) | 3.3V | 200 MHz | ±25ppm | LVDS | Enable/Disable | Crystal | 60mA | - | - | - | 0.047 (1.20mm) | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTA123EMB，315 | NXP | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 100 mA | 活跃 | SC-101, SOT-883 | DFN1006B-3 | NXP USA Inc. | Bulk | - | 250 mW | PNP - Pre-Biased | 30 @ 20mA, 5V | 1µA | 150mV @ 500µA, 10mA | 50 V | 180 MHz | 2.2 kOhms | 2.2 kOhms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTD113ZQAZ | NXP | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTA144TM，315 | NXP | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | RS73G1JRT | 活跃 | 0603 (1608 Metric) | 0603 | KOA Speer Electronics, Inc. | Tape & Reel (TR) | -55°C ~ 155°C | RS73-RT | 0.063 L x 0.031 W (1.60mm x 0.80mm) | ±0.25% | 2 | ±50ppm/°C | 187 kOhms | 厚膜 | 0.2W, 1/5W | - | Automotive AEC-Q200 | 0.022 (0.55mm) | AEC-Q200 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTA114TT，215 | NXP | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | PDTA11 | 活跃 | NXP USA Inc. | Bulk | * | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC143ZU，115 | NXP | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | PCB | 活跃 | 恩智浦半导体 | Bulk | -- | Obsolete | -- | USB | -- | 北美 | CDMA 1xRTT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC124EM，315 | NXP | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | 恩智浦半导体 | Bulk | * | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PBRP123ET，215 | NXP | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | PBRP12 | Glenair | 零售包装 | * | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTA114EMB，315 | NXP | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 100 mA | 活跃 | PDTA114 | SC-101, SOT-883 | DFN1006B-3 | 恩智浦半导体 | Bulk | - | 250 mW | PNP - Pre-Biased | 30 @ 5mA, 5V | 1µA | 150mV @ 500µA, 10mA | 50 V | 180 MHz | 10 kOhms | 10 kOhms |