制造商是'NTE ELECT'
NTE ELECT 晶体管 - FET，MOSFET - 单个
(110)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 终端数量 | 晶体管元件材料 | 厂商 | 操作温度 | 系列 | ECCN 代码 | 类型 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 最大功率耗散 | 技术 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | Reach合规守则 | 引脚数量 | JESD-30代码 | 资历状况 | 极性 | 配置 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)（最大值） | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | Vgs（最大值） | 极性/通道类型 | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | DS 击穿电压-最小值 | 雪崩能量等级（Eas） | 场效应管技术 | 最大耗散功率(Abs) | 恢复时间 | 场效应管特性 | 漏源电阻 | 栅源电压 | 反馈上限-最大值 (Crss) | 最高频段 | 环境耗散-最大值 | 功率增益-最小值(Gp) | 高度 | 长度 | 宽度 | 达到SVHC | ||||||||||||||||||||||||||||||||||
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 | NTE2392 | NTE Electronics, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 125 ns | NTE2392 | NTE Electronics | 40(A) | 100(V) | Military | TO-3 | -55C to 150C | ±20(V) | Enhancement | 1 | 无 | 通孔 | Bag | 40A (Tc) | 10V | 150W (Tc) | 活跃 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT | METAL | 未说明 | 有 | 135 ns | ROUND | 活跃 | NTE ELECTRONICS INC | 225 ns | 1.6 | TO-204AA | 40 A | 通孔 | TO-204AA, TO-3 | NO | 2 | TO-3 | 72.574779 g | 2 | SILICON | NTE Electronics, Inc | Non-Compliant | -55°C ~ 150°C (TJ) | - | EAR99 | 功率MOSFET | 150 °C | -55 °C | FET 通用电源 | 150 W | MOSFET (Metal Oxide) | BOTTOM | PIN/PEG | 未说明 | unknown | 2 +Tab | O-MBFM-P2 | 不合格 | N | SINGLE WITH BUILT-IN DIODE | Single | 增强型MOSFET | 150 W | DRAIN | 35 ns | N-Channel | SWITCHING | 55mOhm @ 20A, 10V | 4V @ 250µA | 3000 pF @ 25 V | 120 nC @ 10 V | 100 V | ±20V | N-CHANNEL | 40 A | 4 V | TO-3 | 20 V | 32 A | 0.055 Ω | 100 V | 160 A | 100 V | METAL-OXIDE SEMICONDUCTOR | 125 W | - | 55 mΩ | 4 V | 150 W | 8.89 mm | 152.4 mm | 22.1996 mm | Unknown | |||||||||||
| NTE2980 | NTE Electronics, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NTE Electronics | IN-LINE, R-PSIP-T3 | IN-LINE | PLASTIC/EPOXY | 未说明 | 150 °C | 有 | RECTANGULAR | 1 | 活跃 | NTE ELECTRONICS INC | 5.74 | 7.7 A | NO | 3 | SILICON | NTE2980 | EAR99 | FET 通用电源 | SINGLE | THROUGH-HOLE | 未说明 | unknown | R-PSIP-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | N-CHANNEL | 7.7 A | 0.2 Ω | 31 A | 60 V | 47 mJ | METAL-OXIDE SEMICONDUCTOR | 25 W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTE2393 | NTE Electronics, Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | 10A (Tc) | 10V | 125W (Tc) | NTE2393 | NTE Electronics | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT | PLASTIC/EPOXY | 未说明 | 有 | RECTANGULAR | 1 | 活跃 | NTE ELECTRONICS INC | 2.13 | 9 A | 通孔 | TO-3P-3, SC-65-3 | NO | TO-3P | 3 | SILICON | NTE Electronics, Inc | Bag | 150°C (TJ) | - | EAR99 | FET 通用电源 | SINGLE | THROUGH-HOLE | 未说明 | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | N-Channel | SWITCHING | 670mOhm @ 5A, 10V | 4V @ 1mA | 500 V | ±20V | N-CHANNEL | 9 A | 0.7 Ω | 36 A | 500 V | METAL-OXIDE SEMICONDUCTOR | 150 W | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTE454 | NTE Electronics, Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | 60mA | 1.2W | NTE454 | NTE Electronics | CYLINDRICAL, O-MBCY-W4 | CYLINDRICAL | METAL | 未说明 | 有 | ROUND | 1 | 活跃 | NTE ELECTRONICS INC | 2.12 | 0.06 A | 通孔 | TO-72-3 | NO | TO-72 | 4 | SILICON | NTE Electronics, Inc | Bag | -65°C ~ 175°C (TJ) | - | 8541.21.00.75 | FET 通用电源 | BOTTOM | WIRE | 未说明 | unknown | O-MBCY-W4 | 不合格 | SINGLE WITH BUILT-IN DIODE | DUAL GATE, DEPLETION MODE | SOURCE | N-Channel | AMPLIFIER | - | - | 3300 pF @ 15 V | 20 V | N-CHANNEL | TO-72 | METAL-OXIDE SEMICONDUCTOR | 0.36 W | Standard | 0.03 pF | 超高频段 | 15 dB | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTE2988 | NTE Electronics, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NTE Electronics | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL | PLASTIC/EPOXY | ROUND | 1 | 活跃 | NTE ELECTRONICS INC | 5.75 | 0.2 A | NO | 3 | SILICON | NTE2988 | EAR99 | BOTTOM | WIRE | unknown | O-PBCY-W3 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | N-CHANNEL | TO-52 | 5 Ω | 60 V | METAL-OXIDE SEMICONDUCTOR | 5 pF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTE490 | NTE Electronics, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NTE Electronics | Bag | 500mA (Tj) | 10V | 350mW (Ta) | 活跃 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL | PLASTIC/EPOXY | 未说明 | 有 | ROUND | 1 | 活跃 | NTE ELECTRONICS INC | 5.71 | 0.5 A | 通孔 | Axial | NO | Axial | 3 | SILICON | NTE Electronics, Inc | NTE490 | -55°C ~ 150°C (TJ) | - | EAR99 | 8541.21.00.95 | FET 通用电源 | MOSFET (Metal Oxide) | BOTTOM | WIRE | 未说明 | compliant | O-PBCY-W3 | 不合格 | SINGLE | 增强型MOSFET | N-Channel | SWITCHING | 5Ohm @ 200mA, 10V | 3V @ 1mA | 60 pF @ 10 V | 60 V | ±20V | N-CHANNEL | 0.5 A | 5 Ω | 60 V | METAL-OXIDE SEMICONDUCTOR | 0.83 W | - | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NTE2372 | NTE Electronics, Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | 3.5A (Tc) | 10V | 40W (Tc) | NTE2372 | NTE Electronics | 通孔 | TO-220-3 | TO-220 | NTE Electronics, Inc | Bag | -55°C ~ 150°C (TJ) | - | P-Channel | 1.5Ohm @ 1.5A, 10V | 4V @ 250μA | 350 pF @ 25 V | 22 nC @ 10 V | 200 V | ±20V | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTE2388 | NTE Electronics, Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | 18A (Tc) | 10V | 125W (Tc) | NTE2388 | NTE Electronics | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT | PLASTIC/EPOXY | 未说明 | 有 | 90 ns | RECTANGULAR | 1 | 活跃 | NTE ELECTRONICS INC | 140 ns | 1.56 | TO-220AB | 18 A | 通孔 | TO-220-3 | NO | TO-220 | 3 | SILICON | NTE Electronics, Inc | Bag | -55°C ~ 150°C (TJ) | - | EAR99 | FET 通用电源 | SINGLE | THROUGH-HOLE | 未说明 | unknown | 3 | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N-Channel | SWITCHING | 180mOhm @ 10A, 10V | 4V @ 250μA | 1600 pF @ 25 V | 60 nC @ 10 V | 200 V | ±20V | N-CHANNEL | TO-220AB | 18 A | 0.18 Ω | 72 A | 200 V | METAL-OXIDE SEMICONDUCTOR | 125 W | - | 125 W | ||||||||||||||||||||||||||||||||||||||||||||
| NTE67 | NTE Electronics, Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | 4.5A (Tc) | 10V | 75W (Tc) | NTE67 | NTE Electronics | 4.5(A) | 400(V) | Military | TO-220 | -55C to 150C | ±20(V) | Enhancement | 1 | 无 | 通孔 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT | PLASTIC/EPOXY | 未说明 | 有 | RECTANGULAR | 活跃 | NTE ELECTRONICS INC | 90 ns | 1.59 | TO-220AB | 4.5 A | 通孔 | TO-220-3 | NO | TO-220 | 3 | SILICON | NTE Electronics, Inc | Bag | -55°C ~ 150°C (TJ) | - | EAR99 | 功率MOSFET | HIGH RELIABILITY | 8541.29.00.95 | FET 通用电源 | SINGLE | THROUGH-HOLE | 未说明 | unknown | 3 +Tab | R-PSFM-T3 | 不合格 | N | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | 75(W) | DRAIN | N-Channel | SWITCHING | 1.5Ohm @ 3A, 10V | 4V @ 250μA | 780 pF @ 25 V | 30 nC @ 10 V | 400 V | ±20V | N-CHANNEL | TO-220AB | 5.5 A | 1.5 Ω | 18 A | 400 V | 290 mJ | METAL-OXIDE SEMICONDUCTOR | 75 W | - | 75 W | ||||||||||||||||||||||||||||||
| NTE2397 | NTE Electronics, Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | 10A (Tc) | 10V | 125W (Tc) | NTE2397 | NTE Electronics | 10(A) | 400(V) | Military | TO-220 | -55C to 150C | ±20(V) | Enhancement | 1 | 无 | 通孔 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT | PLASTIC/EPOXY | 未说明 | 有 | RECTANGULAR | 活跃 | NTE ELECTRONICS INC | 2.11 | 10 A | 通孔 | TO-220-3 | NO | TO-220 | 3 | SILICON | NTE Electronics, Inc | Bag | -55°C ~ 150°C (TJ) | - | EAR99 | 功率MOSFET | 雪崩 额定 | FET 通用电源 | SINGLE | THROUGH-HOLE | 未说明 | unknown | 3 +Tab | R-PSFM-T3 | 不合格 | N | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | 125(W) | DRAIN | N-Channel | SWITCHING | 550mOhm @ 6A, 10V | 4V @ 250μA | 1400 pF @ 25 V | 63 nC @ 10 V | 400 V | ±20V | N-CHANNEL | 10 A | 0.55 Ω | 40 A | 400 V | 520 mJ | METAL-OXIDE SEMICONDUCTOR | 125 W | - | |||||||||||||||||||||||||||||||||||
| NTE2379 | NTE Electronics, Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | 6.2A (Tc) | 10V | 125W (Tc) | NTE2379 | NTE Electronics | 6.2(A) | 600(V) | Military | TO-220 | -55C to 150C | ±20(V) | Enhancement | 1 | 无 | 通孔 | FLANGE MOUNT | PLASTIC/EPOXY | 未说明 | 150 °C | 有 | RECTANGULAR | 活跃 | NTE ELECTRONICS INC | 2.3 | 6.2 A | 通孔 | TO-220-3 | NO | TO-220 | 3 | SILICON | NTE Electronics, Inc | Bag | -55°C ~ 150°C (TJ) | - | EAR99 | 功率MOSFET | FET 通用电源 | SINGLE | THROUGH-HOLE | 未说明 | unknown | 3 +Tab | R-PSFM-T3 | 不合格 | N | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | 125(W) | DRAIN | N-Channel | SWITCHING | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 1300 pF @ 25 V | 60 nC @ 10 V | 600 V | ±20V | N-CHANNEL | 6.2 A | 1.2 Ω | 25 A | 600 V | 570 mJ | METAL-OXIDE SEMICONDUCTOR | 125 W | - | ||||||||||||||||||||||||||||||||||||
| NTE222 | NTE Electronics, Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | 50mA (Tj) | - | 360mW (Ta), 1.2mW (Tc) | NTE222 | NTE Electronics | 0.05(A) | 25(V) | Military | TO-72 | -65C to 175C | 1 | 无 | 通孔 | CYLINDRICAL, O-MBCY-W4 | CYLINDRICAL | METAL | 未说明 | 有 | ROUND | 活跃 | NTE ELECTRONICS INC | 2.11 | 0.05 A | 通孔 | TO-206AF, TO-72-4 Metal Can | NO | TO-72 | 4 | SILICON | NTE Electronics, Inc | Bag | -65°C ~ 175°C (TJ) | - | EAR99 | 小信号 | 8541.21.00.95 | FET 通用电源 | BOTTOM | WIRE | 未说明 | unknown | 4 | O-MBCY-W4 | 不合格 | N | SINGLE | DUAL GATE, DEPLETION MODE | 0.36(W) | SOURCE | N-Channel | AMPLIFIER | - | 4V @ 20μA | 3300 pF @ 15 V | 25 V | - | N-CHANNEL | TO-72 | 25 V | METAL-OXIDE SEMICONDUCTOR | 0.33 W | - | 0.03 pF | 甚高频段 | 14 dB | ||||||||||||||||||||||||||||||||||||||
| NTE2396A | NTE Electronics, Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | 33A (Tc) | 10V | 130W (Tc) | NTE2396A | NTE Electronics | , | 未说明 | 有 | 活跃 | NTE ELECTRONICS INC | 5.7 | 通孔 | TO-220-3 | TO-220 | NTE Electronics, Inc | Bag | -55°C ~ 175°C (TJ) | - | 未说明 | unknown | N-Channel | 44mOhm @ 16A, 10V | 4V @ 250μA | 1960 pF @ 25 V | 71 nC @ 10 V | 100 V | ±20V | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTE2374 | NTE Electronics, Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | 18A (Tc) | 10V | 125W (Tc) | NTE2374 | NTE Electronics | 18(A) | 200(V) | Military | TO-220 | -55C to 150C | ±20(V) | Enhancement | 1 | 无 | 通孔 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT | PLASTIC/EPOXY | 未说明 | 有 | RECTANGULAR | 活跃 | NTE ELECTRONICS INC | 2.1 | 18 A | 通孔 | TO-220-3 | NO | TO-220 | 3 | SILICON | NTE Electronics, Inc | Bag | -55°C ~ 150°C (TJ) | - | EAR99 | 功率MOSFET | SINGLE | THROUGH-HOLE | 未说明 | unknown | 3 +Tab | R-PSFM-T3 | 不合格 | N | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | 125(W) | DRAIN | N-Channel | SWITCHING | 180mOhm @ 31A, 10V | 4V @ 250μA | 1300 pF @ 25 V | 70 nC @ 10 V | 200 V | ±20V | N-CHANNEL | 0.18 Ω | 72 A | 200 V | 580 mJ | METAL-OXIDE SEMICONDUCTOR | - | |||||||||||||||||||||||||||||||||||||||
| NTE2992 | NTE Electronics, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NTE Electronics | 活跃 | NTE ELECTRONICS INC | 2.14 | NTE2992 | EAR99 | unknown | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTE2940 | NTE Electronics, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NTE Electronics | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT | PLASTIC/EPOXY | 未说明 | 有 | RECTANGULAR | 1 | 活跃 | NTE ELECTRONICS INC | 2.15 | TO-220AB | 15 A | NO | 3 | SILICON | NTE2940 | EAR99 | SINGLE | THROUGH-HOLE | 未说明 | unknown | 3 | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 0.1 Ω | 60 A | 60 V | 9.5 mJ | METAL-OXIDE SEMICONDUCTOR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTE2954 | NTE Electronics, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NTE Electronics | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT | PLASTIC/EPOXY | 未说明 | 有 | RECTANGULAR | 1 | 活跃 | NTE ELECTRONICS INC | 5.75 | 70 A | NO | 3 | SILICON | NTE2954 | EAR99 | SINGLE | THROUGH-HOLE | 未说明 | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | ISOLATED | SWITCHING | N-CHANNEL | 0.018 Ω | 280 A | 100 V | METAL-OXIDE SEMICONDUCTOR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTE2943 | NTE Electronics, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NTE Electronics | NTE2943 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTE491 | NTE Electronics, Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | 200mA (Ta) | 4.5V, 10V | 350mW (Ta) | NTE491 | NTE Electronics | 0.2(A) | 60(V) | Military | TO-92 | -55C to 150C | ±20(V) | Enhancement | 1 | 无 | 通孔 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL | PLASTIC/EPOXY | 未说明 | 有 | ROUND | 活跃 | NTE ELECTRONICS INC | 2.14 | 0.2 A | 通孔 | TO-226-3, TO-92-3 (TO-226AA) | NO | TO-92 | 3 | SILICON | NTE Electronics, Inc | Bag | -55°C ~ 150°C (TJ) | - | EAR99 | 小信号 | 8541.21.00.95 | BOTTOM | WIRE | 未说明 | unknown | 3 | O-PBCY-W3 | 不合格 | N | SINGLE | 增强型MOSFET | 0.35(W) | N-Channel | SWITCHING | 5Ohm @ 500mA, 10V | 3V @ 1mA | 50 pF @ 25 V | 60 V | ±20V | N-CHANNEL | 5 Ω | 60 V | METAL-OXIDE SEMICONDUCTOR | - | 25 pF | |||||||||||||||||||||||||||||||||||||||||
| NTE2986 | NTE Electronics, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NTE Electronics | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT | PLASTIC/EPOXY | 未说明 | 有 | RECTANGULAR | 1 | 活跃 | NTE ELECTRONICS INC | 5.75 | 50 A | NO | 3 | SILICON | NTE2986 | EAR99 | 快速切换 | SINGLE | THROUGH-HOLE | 未说明 | unknown | R-PSFM-T3 | 不合格 | SINGLE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | 0.028 Ω | 200 A | 60 V | 110 mJ | METAL-OXIDE SEMICONDUCTOR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTE2921 | NTE Electronics, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NTE Electronics | Compliant | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT | PLASTIC/EPOXY | 未说明 | 有 | RECTANGULAR | 1 | 活跃 | NTE ELECTRONICS INC | 2.12 | 15 A | NO | 72.574779 g | 3 | SILICON | NTE2921 | EAR99 | 雪崩 额定 | SINGLE | THROUGH-HOLE | 未说明 | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | TO-247 | 0.28 Ω | 60 A | 250 V | 550 mJ | METAL-OXIDE SEMICONDUCTOR | 12.7 mm | 152.4 mm | 76.2 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTE2384 | NTE Electronics, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | NTE Electronics | 6(A) | 800(V) | Military | -55C to 150C | ±20(V) | Enhancement | 1 | 无 | 通孔 | Compliant | Bag | 6A (Tc) | 10V | 180W (Tc) | 活跃 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT | METAL | 未说明 | 有 | 150 ns | ROUND | Obsolete | NTE ELECTRONICS INC | 420 ns | 8.43 | TO-204AA | 6 A | 通孔 | TO-204AA, TO-3 | NO | 3 | TO-3 | 2 | SILICON | NTE Electronics, Inc | NTE2384 | -55°C ~ 150°C (TJ) | - | EAR99 | 功率MOSFET | 150 °C | -55 °C | 8541.29.00.95 | FET 通用电源 | MOSFET (Metal Oxide) | BOTTOM | PIN/PEG | 未说明 | unknown | 2 +Tab | O-MBFM-P2 | 不合格 | N | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | 180(W) | DRAIN | N-Channel | SWITCHING | 1.4Ohm @ 3A, 10V | 4.5V @ 250µA | 2600 pF @ 25 V | 130 nC @ 10 V | 900 V | ±20V | N-CHANNEL | 6 A | TO-3 | 20 V | 6 A | 1.5 Ω | 24 A | 800 V | METAL-OXIDE SEMICONDUCTOR | 125 W | - | 125 W | ||||||||||||||||||||||||
| NTE2395 | NTE Electronics, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | NTE Electronics | 8541290080 | Compliant | 45 ns | Bag | 50A (Tc) | 10V | 150W (Tc) | 活跃 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT | PLASTIC/EPOXY | 未说明 | 有 | RECTANGULAR | 1 | 活跃 | NTE ELECTRONICS INC | 2.11 | 50 A | 通孔 | TO-220-3 | NO | 3 | TO-220 | 3 | SILICON | NTE Electronics, Inc | NTE2395 | -55°C ~ 175°C (TJ) | - | EAR99 | 175 °C | -55 °C | FET 通用电源 | 150 W | MOSFET (Metal Oxide) | SINGLE | THROUGH-HOLE | 未说明 | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | Single | 增强型MOSFET | 150 W | DRAIN | 14 ns | N-Channel | SWITCHING | 28mOhm @ 31A, 10V | 4V @ 250µA | 1900 pF @ 25 V | 67 nC @ 10 V | 110 ns | 60 V | ±20V | N-CHANNEL | 50 A | 4 V | 20 V | 50 A | 0.028 Ω | 60 V | 200 A | 60 V | 100 mJ | METAL-OXIDE SEMICONDUCTOR | 150 W | 180 ns | - | 28 mΩ | 2 V | 15.494 mm | 10.668 mm | Unknown | ||||||||||||||||||||||||||
| NTE66 | NTE Electronics, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 100(V) | Military | TO-220 | -55C to 150C | ±20(V) | Enhancement | 1 | 无 | 通孔 | NTE66 | NTE Electronics | Bag | 14A (Tc) | 10V | 77W (Tc) | 活跃 | TO-220, 3 PIN | FLANGE MOUNT | PLASTIC/EPOXY | 未说明 | 有 | 200 ns | RECTANGULAR | 活跃 | NTE ELECTRONICS INC | 300 ns | 1.72 | TO-220AB | 14 A | 通孔 | TO-220-3 | NO | TO-220 | 3 | SILICON | NTE Electronics, Inc | 14(A) | -55°C ~ 150°C (TJ) | - | EAR99 | 功率MOSFET | HIGH RELIABILITY | FET 通用电源 | MOSFET (Metal Oxide) | SINGLE | THROUGH-HOLE | 未说明 | unknown | 3 +Tab | R-PSFM-T3 | 不合格 | N | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | 77(W) | DRAIN | N-Channel | SWITCHING | 160mOhm @ 8.3A, 10V | 4V @ 250µA | 640 pF @ 25 V | 26 nC @ 10 V | 100 V | ±20V | N-CHANNEL | TO-220AB | 12 A | 0.16 Ω | 56 A | 100 V | 69 mJ | METAL-OXIDE SEMICONDUCTOR | 75 W | - | 75 W | |||||||||||||||||||||||||||||
| NTE2920 | NTE Electronics, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NTE Electronics | Bag | 70A (Tc) | 10V | 230W (Tc) | 活跃 | 通孔 | TO-3P-3, SC-65-3 | TO-3P | NTE Electronics, Inc | NTE2920 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | N-Channel | 14mOhm @ 54A, 10V | 4V @ 250µA | 4500 pF @ 25 V | 160 nC @ 10 V | 60 V | ±20V | - |