制造商是'Microsemi'
Microsemi 晶体管 - FET，MOSFET - 阵列
(240)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 底架 | 安装类型 | 包装/外壳 | 引脚数 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 电阻 | 端子表面处理 | 附加功能 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 时间@峰值回流温度-最大值(s) | 引脚数量 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)（最大值） | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 下降时间（典型值） | 连续放电电流(ID) | 栅极至源极电压(Vgs) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | DS 击穿电压-最小值 | 雪崩能量等级（Eas） | 场效应管技术 | 场效应管特性 | 高度 | 长度 | 宽度 | 辐射硬化 | RoHS状态 | 无铅 | |||
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 | APTM50HM65FT3G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 75 ns | Chassis Mount, Screw | 底座安装 | SP3 | 3 | SILICON | 4 | -40°C~150°C TJ | Bulk | 2006 | e1 | yes | 活跃 | 1 (Unlimited) | 25 | EAR99 | 锡银铜 | 雪崩 额定 | 390W | UPPER | UNSPECIFIED | 25 | R-XUFM-X25 | COMPLEX | 增强型MOSFET | 390W | ISOLATED | 21 ns | 4 N-Channel (H-Bridge) | SWITCHING | 78m Ω @ 25.5A, 10V | 5V @ 2.5mA | 7000pF @ 25V | 140nC @ 10V | 38ns | 500V | 93 ns | 51A | 30V | 0.078Ohm | 500V | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||
 | APTC60DSKM24T3G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Chassis Mount, Screw | 底座安装 | SP3 | 3 | 2 | -40°C~150°C TJ | Tray | 2012 | CoolMOS™ | 活跃 | 1 (Unlimited) | EAR99 | 462W | 未说明 | 未说明 | 2 N Channel (Dual Buck Chopper) | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 14400pF @ 25V | 300nC @ 10V | 600V | 95A | 20V | METAL-OXIDE SEMICONDUCTOR | 超级交界处 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||
 | APTM50H14FT3G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 50 ns | Chassis Mount, Screw | 底座安装 | SP3 | 32 | SILICON | 4 | -40°C~150°C TJ | Bulk | 2006 | e1 | yes | 活跃 | 1 (Unlimited) | 25 | EAR99 | 锡银铜 | 雪崩 额定 | 208W | UPPER | UNSPECIFIED | 25 | R-XUFM-X25 | 1 | Single | 增强型MOSFET | 208W | ISOLATED | 10 ns | 4 N-Channel (H-Bridge) | SWITCHING | 168m Ω @ 13A, 10V | 5V @ 1mA | 3259pF @ 25V | 72nC @ 10V | 17ns | 500V | 41 ns | 26A | 30V | 500V | METAL-OXIDE SEMICONDUCTOR | Standard | 11.5mm | 73.4mm | 40.8mm | 无 | 符合RoHS标准 | |||||||||||||||
 | APTM100A13SG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 50 ns | Chassis Mount, Screw | 底座安装 | SP6 | 6 | SILICON | 2 | -40°C~150°C TJ | Bulk | 1999 | e1 | yes | 活跃 | 1 (Unlimited) | 7 | EAR99 | 156mOhm | 锡银铜 | 雪崩 额定 | 1.25kW | UPPER | UNSPECIFIED | 7 | R-XUFM-X7 | 1 | Single | 增强型MOSFET | 1.25kW | ISOLATED | 9 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 156m Ω @ 32.5A, 10V | 5V @ 6mA | 15200pF @ 25V | 562nC @ 10V | 9ns | 1000V 1kV | 24 ns | 65A | 30V | METAL-OXIDE SEMICONDUCTOR | Standard | 21.9mm | 108mm | 62mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||
 | APTM10HM19FT3G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 36 Weeks | 95 ns | Chassis Mount, Screw | 底座安装 | SP3 | 3 | SILICON | 4 | -40°C~150°C TJ | Bulk | 2006 | e1 | yes | 活跃 | 1 (Unlimited) | 25 | EAR99 | 锡银铜 | 雪崩 额定 | 208W | UPPER | UNSPECIFIED | 25 | R-XUFM-X25 | 1 | Single | 增强型MOSFET | 208W | ISOLATED | 35 ns | 4 N-Channel (H-Bridge) | SWITCHING | 21m Ω @ 35A, 10V | 4V @ 1mA | 5100pF @ 25V | 200nC @ 10V | 70ns | 100V | 125 ns | 70A | 30V | 100V | METAL-OXIDE SEMICONDUCTOR | Standard | 11.5mm | 73.4mm | 40.8mm | 无 | 符合RoHS标准 | |||||||||||||||
 | APTC60HM35T3G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 36 Weeks | 283 ns | Chassis Mount, Screw | 底座安装 | SP3 | 3 | SILICON | 4 | -40°C~150°C TJ | Bulk | 2012 | e1 | yes | 活跃 | 1 (Unlimited) | 25 | EAR99 | 锡银铜 | 雪崩 额定 | 416W | UPPER | UNSPECIFIED | 25 | R-XUFM-X25 | 1 | Single | 增强型MOSFET | 416W | ISOLATED | 21 ns | 4 N-Channel (H-Bridge) | SWITCHING | 35m Ω @ 72A, 10V | 3.9V @ 5.4mA | 14000pF @ 25V | 518nC @ 10V | 30ns | 600V | 84 ns | 72A | 20V | 600V | 200A | METAL-OXIDE SEMICONDUCTOR | Standard | 11.5mm | 73.4mm | 40.8mm | 无 | 符合RoHS标准 | ||||||||||||||
 | APTM60H23FT1G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 36 Weeks | 115 ns | Chassis Mount, Screw | 底座安装 | SP1 | 1 | SILICON | 4 | -40°C~150°C TJ | Bulk | 2007 | 活跃 | 1 (Unlimited) | 12 | EAR99 | 雪崩 额定 | 208W | UPPER | UNSPECIFIED | 12 | COMPLEX | 增强型MOSFET | 208W | ISOLATED | 37 ns | 4 N-Channel (H-Bridge) | SWITCHING | 276m Ω @ 17A, 10V | 5V @ 1mA | 5316pF @ 25V | 165nC @ 10V | 43ns | 600V | 34 ns | 20A | 30V | 0.23Ohm | 600V | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 符合RoHS标准 | ||||||||||||||||||||||
 | APTM50H15FT1G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 36 Weeks | 80 ns | Chassis Mount, Screw | 底座安装 | SP1 | 1 | SILICON | 4 | -40°C~150°C TJ | Bulk | 2007 | 活跃 | 1 (Unlimited) | 12 | EAR99 | 雪崩 额定 | 208W | UPPER | UNSPECIFIED | 12 | COMPLEX | 增强型MOSFET | 208W | ISOLATED | 29 ns | 4 N-Channel (H-Bridge) | SWITCHING | 180m Ω @ 21A, 10V | 5V @ 1mA | 5448pF @ 25V | 170nC @ 10V | 35ns | 500V | 26 ns | 25A | 30V | 500V | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 符合RoHS标准 | |||||||||||||||||||||||
 | APTC60AM35SCTG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 36 Weeks | 283 ns | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | 底座安装 | SP4 | 4 | SILICON | 2 | -40°C~150°C TJ | Bulk | e1 | yes | 活跃 | 1 (Unlimited) | 10 | EAR99 | 锡银铜 | 416W | UPPER | UNSPECIFIED | 10 | R-XUFM-X10 | 增强型MOSFET | 416W | ISOLATED | 21 ns | 2 N-Channel (Half Bridge) | SWITCHING | 35m Ω @ 36A, 10V | 3.9V @ 2mA | 14000pF @ 25V | 518nC @ 10V | 30ns | 600V | 84 ns | 72A | 30V | 0.035Ohm | 600V | 1800 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 符合RoHS标准 | |||||||||||||||||||
 | APTC60TDUM35PG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 36 Weeks | 283 ns | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | 底座安装 | SP6 | 6 | SILICON | 6 | -40°C~150°C TJ | Bulk | 2006 | e1 | yes | 活跃 | 1 (Unlimited) | 21 | EAR99 | 锡银铜 | 雪崩 额定 | 416W | UPPER | UNSPECIFIED | 21 | R-XUFM-X21 | 3 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 416W | ISOLATED | 21 ns | 6 N-Channel (3-Phase Bridge) | SWITCHING | 35m Ω @ 72A, 10V | 3.9V @ 5.4mA | 14000pF @ 25V | 518nC @ 10V | 30ns | 600V | 84 ns | 72A | 20V | 0.035Ohm | 200A | 1800 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 符合RoHS标准 | ||||||||||||||||
 | APTM10HM05FG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 36 Weeks | 280 ns | Chassis Mount, Screw | 底座安装 | SP6 | 12 | SILICON | 4 | -40°C~150°C TJ | Bulk | 2012 | e1 | yes | 活跃 | 1 (Unlimited) | 12 | EAR99 | 锡银铜 | 雪崩 额定 | 780W | UPPER | UNSPECIFIED | 12 | 增强型MOSFET | 780W | ISOLATED | 80 ns | 4 N-Channel (H-Bridge) | SWITCHING | 5m Ω @ 125A, 10V | 4V @ 5mA | 20000pF @ 25V | 700nC @ 10V | 165ns | 100V | 135 ns | 278A | 30V | 0.005Ohm | 1100A | 100V | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 符合RoHS标准 | ||||||||||||||||||
 | APTM120A15FG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 36 Weeks | 160 ns | Chassis Mount, Screw | 底座安装 | SP6 | 6 | SILICON | 2 | -40°C~150°C TJ | Bulk | e1 | yes | 活跃 | 1 (Unlimited) | 7 | EAR99 | 锡银铜 | 雪崩 额定 | 1.25kW | UPPER | UNSPECIFIED | 7 | R-XUFM-X7 | 增强型MOSFET | 1.25kW | ISOLATED | 20 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 175m Ω @ 30A, 10V | 5V @ 10mA | 20600pF @ 25V | 748nC @ 10V | 15ns | 1200V 1.2kV | 45 ns | 60A | 30V | 0.175Ohm | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 符合RoHS标准 | |||||||||||||||||||
 | APTC80AM75SCG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 22 Weeks | 83 ns | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | 底座安装 | SP6 | 6 | SILICON | 2 | -40°C~150°C TJ | Bulk | 1997 | e1 | yes | 活跃 | 1 (Unlimited) | 7 | EAR99 | 锡银铜 | 雪崩 额定 | 568W | UPPER | UNSPECIFIED | 7 | R-XUFM-X7 | 增强型MOSFET | 568W | ISOLATED | 10 ns | 2 N-Channel (Half Bridge) | SWITCHING | 75m Ω @ 28A, 10V | 3.9V @ 4mA | 9015pF @ 25V | 364nC @ 10V | 13ns | 800V | 35 ns | 56A | 30V | 0.075Ohm | 800V | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 符合RoHS标准 | ||||||||||||||||||
 | APTM100AM90FG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 36 Weeks | 155 ns | Chassis Mount, Screw | 底座安装 | SP6 | 6 | SILICON | 2 | -40°C~150°C TJ | Bulk | 2006 | e1 | yes | 活跃 | 1 (Unlimited) | 7 | EAR99 | 锡银铜 | 雪崩 额定 | 1.25kW | UPPER | UNSPECIFIED | 未说明 | 未说明 | 7 | R-XUFM-X7 | 不合格 | 增强型MOSFET | 1.25kW | ISOLATED | 18 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 105m Ω @ 39A, 10V | 5V @ 10mA | 20700pF @ 25V | 744nC @ 10V | 12ns | 1000V 1kV | 40 ns | 78A | 30V | 0.105Ohm | 1000V | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 符合RoHS标准 | 无铅 | ||||||||||||||
 | APTM10AM02FG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 500 ns | Chassis Mount, Screw | 底座安装 | SP6 | 6 | SILICON | 2 | -40°C~150°C TJ | Bulk | 2012 | e1 | yes | 活跃 | 1 (Unlimited) | 7 | EAR99 | 锡银铜 | 雪崩 额定 | 1.25kW | UPPER | UNSPECIFIED | 7 | R-XUFM-X7 | 增强型MOSFET | 1.25kW | ISOLATED | 160 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 2.5m Ω @ 200A, 10V | 4V @ 10mA | 40000pF @ 25V | 1360nC @ 10V | 240ns | 100V | 160 ns | 495A | 30V | 1900A | 100V | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 符合RoHS标准 | |||||||||||||||||
 | APTM20AM04FG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 36 Weeks | 88 ns | Chassis Mount, Screw | 底座安装 | SP6 | 6 | SILICON | 2 | -40°C~150°C TJ | Bulk | 2006 | e1 | yes | 活跃 | 1 (Unlimited) | 7 | EAR99 | 锡银铜 | 雪崩 额定 | 1.25kW | UPPER | UNSPECIFIED | 7 | R-XUFM-X7 | 1 | Single | 增强型MOSFET | 1.25kW | ISOLATED | 32 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 5m Ω @ 186A, 10V | 5V @ 10mA | 28900pF @ 25V | 560nC @ 10V | 64ns | 200V | 116 ns | 372A | 30V | 0.005Ohm | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 21.9mm | 108mm | 62mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||
 | APTM50HM75STG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 36 Weeks | 87 ns | Chassis Mount, Screw | 底座安装 | SP4 | 4 | SILICON | 4 | -40°C~150°C TJ | Bulk | 1999 | e1 | yes | 活跃 | 1 (Unlimited) | 14 | EAR99 | 锡银铜 | 雪崩 额定 | 357W | UPPER | UNSPECIFIED | 14 | 增强型MOSFET | 357W | ISOLATED | 18 ns | 4 N-Channel (H-Bridge) | SWITCHING | 90m Ω @ 23A, 10V | 5V @ 2.5mA | 5600pF @ 25V | 123nC @ 10V | 35ns | 500V | 77 ns | 46A | 30V | 0.09Ohm | 500V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 符合RoHS标准 | |||||||||||||||||||
| APTM100H45SCTG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 22 Weeks | 121 ns | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount, Screw | 底座安装 | SP4 | 4 | SILICON | 4 | -40°C~150°C TJ | Bulk | 1997 | POWER MOS 7® | e1 | yes | 活跃 | 1 (Unlimited) | 14 | EAR99 | 锡银铜 | 雪崩 额定 | 357W | UPPER | UNSPECIFIED | 未说明 | 未说明 | 14 | 不合格 | 增强型MOSFET | 357W | ISOLATED | 10 ns | 4 N-Channel (H-Bridge) | SWITCHING | 540m Ω @ 9A, 10V | 5V @ 2.5mA | 4350pF @ 25V | 154nC @ 10V | 12ns | 1000V 1kV | 35 ns | 18A | 30V | 72A | 1000V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 符合RoHS标准 | |||||||||||||||
 | APTM50AM38STG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 87 ns | Chassis Mount, Screw | 底座安装 | SP4 | 4 | SILICON | 2 | -40°C~150°C TJ | Bulk | e1 | yes | 活跃 | 1 (Unlimited) | 10 | EAR99 | 锡银铜 | 雪崩能源评级 | 694W | UPPER | UNSPECIFIED | 10 | R-XUFM-X10 | 增强型MOSFET | 694W | ISOLATED | 18 ns | 2 N-Channel (Half Bridge) | SWITCHING | 45m Ω @ 45A, 10V | 5V @ 5mA | 11200pF @ 25V | 246nC @ 10V | 35ns | 500V | 77 ns | 90A | 30V | 360A | 500V | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 符合RoHS标准 | ||||||||||||||||||||
 | APTM50AM24SG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 50 ns | Chassis Mount, Screw | 底座安装 | SP6 | 7 | SILICON | 2 | -40°C~150°C TJ | Bulk | 1999 | e1 | yes | 活跃 | 1 (Unlimited) | 7 | EAR99 | 锡银铜 | 1.25kW | UPPER | UNSPECIFIED | 增强型MOSFET | 1.25kW | ISOLATED | 10 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 28m Ω @ 75A, 10V | 5V @ 6mA | 19600pF @ 25V | 434nC @ 10V | 17ns | 500V | 41 ns | 150A | 30V | 600A | 500V | 1300 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
 | APTM120H29FG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 36 Weeks | 160 ns | Chassis Mount, Screw | 底座安装 | SP6 | 6 | SILICON | 4 | -40°C~150°C TJ | Bulk | 2012 | POWER MOS 7® | e1 | yes | 活跃 | 1 (Unlimited) | 12 | EAR99 | 锡银铜 | 雪崩 额定 | 780W | UPPER | UNSPECIFIED | 12 | R-XUFM-X12 | 增强型MOSFET | 780W | ISOLATED | 20 ns | 4 N-Channel (H-Bridge) | SWITCHING | 348m Ω @ 17A, 10V | 5V @ 5mA | 10300pF @ 25V | 374nC @ 10V | 15ns | 1200V 1.2kV | 45 ns | 34A | 30V | 1200V | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 符合RoHS标准 | ||||||||||||||||||
 | APTM100A13SCG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 50 ns | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount, Screw | 底座安装 | SP6 | 6 | SILICON | 2 | -40°C~150°C TJ | Bulk | e1 | yes | 活跃 | 1 (Unlimited) | 7 | EAR99 | 锡银铜 | 雪崩 额定 | 1.25kW | UPPER | UNSPECIFIED | 未说明 | 未说明 | 7 | R-XUFM-X7 | 不合格 | 增强型MOSFET | 1.25kW | ISOLATED | 9 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 156m Ω @ 32.5A, 10V | 5V @ 6mA | 15200pF @ 25V | 562nC @ 10V | 1000V 1kV | 24 ns | 65A | 30V | 1000V | 1300 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 符合RoHS标准 | 无铅 | |||||||||||||||||
 | APTMC120TAM33CTPAG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 22 Weeks | 6 | IN PRODUCTION (Last Updated: 1 month ago) | 底座安装 | 底座安装 | SP6 | 6 | 78A Tc | -40°C~150°C TJ | Bulk | 1997 | 活跃 | 1 (Unlimited) | 23 | EAR99 | 370W | UPPER | UNSPECIFIED | R-XUFM-X23 | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | 增强型MOSFET | ISOLATED | 6 N-Channel (3-Phase Bridge) | SWITCHING | 33m Ω @ 60A, 20V | 2.2V @ 3mA (Typ) | 2850pF @ 1000V | 148nC @ 20V | 1200V 1.2kV | 78A | 0.033Ohm | 155A | 1200V | METAL-OXIDE SEMICONDUCTOR | Silicon Carbide (SiC) | 符合RoHS标准 | ||||||||||||||||||||||||||||
 | APTMC120AM16CD3AG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | 底座安装 | D-3 Module | 131A Tc | -40°C~150°C TJ | Bulk | 1997 | 活跃 | 1 (Unlimited) | EAR99 | 625W | 2 N-Channel (Half Bridge) | 20m Ω @ 100A, 20V | 2.2V @ 5mA (Typ) | 4750pF @ 1000V | 246nC @ 20V | 20ns | 1200V 1.2kV | 131A | Silicon Carbide (SiC) | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||
 | APTC60HM70T3G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 36 Weeks | 283 ns | Chassis Mount, Screw | 底座安装 | SP3 | 3 | SILICON | 4 | -40°C~150°C TJ | Bulk | 2006 | e1 | yes | 活跃 | 1 (Unlimited) | 25 | EAR99 | 锡银铜 | 雪崩 额定 | 250W | UPPER | UNSPECIFIED | 25 | R-XUFM-X25 | COMPLEX | 增强型MOSFET | 250W | ISOLATED | 21 ns | 4 N-Channel (H-Bridge) | SWITCHING | 70m Ω @ 39A, 10V | 3.9V @ 2.7mA | 7000pF @ 25V | 259nC @ 10V | 30ns | 600V | 84 ns | 39A | 20V | 0.07Ohm | 160A | 600V | 1800 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 符合RoHS标准 | 无铅 |