制造商是'HARRIS'
HARRIS 晶体管 - 特殊用途
(58)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 安装类型 | 包装/外壳 | 表面安装 | 供应商器件包装 | 终端数量 | 晶体管元件材料 | 外壳材料 | 厂商 | Noal voltage | Number of terals | Rise/fall time | Wire cross-section | 包装 | 系列 | 尺寸/尺寸 | JESD-609代码 | 零件状态 | ECCN 代码 | 类型 | 端子表面处理 | 颜色 | 附加功能 | HTS代码 | 端子位置 | 终端形式 | 深度 | Reach合规守则 | 频率 | 参考标准 | JESD-30代码 | 资历状况 | 配置 | 操作模式 | 电压 - 正向 (Vf) (类型) | 视角 | 箱体转运 | 测试电流 | 镜头风格 | 晶体管应用 | 镜头尺寸 | 极性/通道类型 | Millicandela评级 | JEDEC-95代码 | 漏极-源极导通最大电阻 | 脉冲漏极电流-最大值(IDM) | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大耗散功率(Abs) | 集电极电流-最大值(IC) | 最小直流增益(hFE) | 房屋 | 反馈上限-最大值 (Crss) | 环境耗散-最大值 | 高度 | 宽度 | 高度(最大) | |||||||||||||||
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IRFD223 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | HARRIS SEMICONDUCTOR | IN-LINE, R-PDIP-T3 | 0.7 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | NO | 3 | SILICON | 无 | e0 | EAR99 | 锡铅 | DUAL | THROUGH-HOLE | unknown | R-PDIP-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | N-CHANNEL | 1.2 Ω | 150 V | METAL-OXIDE SEMICONDUCTOR | 1 W | |||||||||||||||||||||||||||||||||||||||||||||
RFM10N12 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | HARRIS SEMICONDUCTOR | FLANGE MOUNT, O-MBFM-P2 | 10 A | 1 | 150 °C | METAL | ROUND | FLANGE MOUNT | 270 ns | 310 ns | NO | 2 | SILICON | 无 | e0 | EAR99 | 锡铅 | 8541.29.00.95 | BOTTOM | PIN/PEG | unknown | O-MBFM-P2 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | TO-204AA | 0.3 Ω | 25 A | 120 V | METAL-OXIDE SEMICONDUCTOR | 75 W | 100 pF | 75 W | |||||||||||||||||||||||||||||||||||||
3N205 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | HARRIS SEMICONDUCTOR | , | 0.05 A | 1 | 200 °C | NO | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | unknown | SINGLE | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.36 W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RF1K49086 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Transferred | HARRIS SEMICONDUCTOR | SMALL OUTLINE, R-PDSO-G8 | 3.5 A | 2 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | 小概要 | 130 ns | 50 ns | YES | 8 | SILICON | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | 雪崩 额定 | DUAL | 鸥翼 | unknown | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | N-CHANNEL | MS-012AA | 0.132 Ω | 30 V | METAL-OXIDE SEMICONDUCTOR | 2 W | |||||||||||||||||||||||||||||||||||||||||
2N4117 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | HARRIS SEMICONDUCTOR | , | 175 °C | NO | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | unknown | N-CHANNEL | JUNCTION | 0.3 W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF622 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | HARRIS SEMICONDUCTOR | FLANGE MOUNT, R-PSFM-T3 | 4 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 160 ns | 100 ns | NO | 3 | SILICON | 无 | e0 | EAR99 | 锡铅 | 8541.29.00.95 | SINGLE | THROUGH-HOLE | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 1.2 Ω | 16 A | 200 V | METAL-OXIDE SEMICONDUCTOR | 40 W | 40 W | ||||||||||||||||||||||||||||||||||||||
IRF627 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | HARRIS SEMICONDUCTOR | FLANGE MOUNT, R-PSFM-T3 | 3.3 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 52 ns | 53 ns | NO | 3 | SILICON | 无 | e0 | EAR99 | 锡铅 | 8541.29.00.95 | SINGLE | THROUGH-HOLE | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 1.5 Ω | 13 A | 275 V | 120 mJ | METAL-OXIDE SEMICONDUCTOR | 40 W | 40 W | |||||||||||||||||||||||||||||||||||||
RFD10N05SM96 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PN4338 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | HARRIS SEMICONDUCTOR | , | 150 °C | NO | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | unknown | N-CHANNEL | JUNCTION | 0.3 W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RFH25P08 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | HARRIS SEMICONDUCTOR | FLANGE MOUNT, R-PSFM-T3 | 25 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 650 ns | 300 ns | NO | 3 | SILICON | 无 | e0 | EAR99 | 锡铅 | 8541.29.00.95 | SINGLE | THROUGH-HOLE | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | P-CHANNEL | TO-218AC | 0.15 Ω | 60 A | 80 V | METAL-OXIDE SEMICONDUCTOR | 150 W | 600 pF | 150 W | |||||||||||||||||||||||||||||||||||||
SK3024 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | HARRIS SEMICONDUCTOR | 1 | 175 °C | 150 MHz | NO | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | unknown | SINGLE | NPN | 5 W | 1 A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RLP1N08LE | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | HARRIS SEMICONDUCTOR | FLANGE MOUNT, R-PSFM-T3 | 1.5 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 12500 ns | 6500 ns | NO | 3 | SILICON | 无 | e0 | EAR99 | 锡铅 | CURRENT LIMITING, ESD PROTECTED | 8541.29.00.95 | SINGLE | THROUGH-HOLE | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 0.75 Ω | 80 V | METAL-OXIDE SEMICONDUCTOR | 75 W | 30 W | ||||||||||||||||||||||||||||||||||||||
BUW40B | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | HARRIS SEMICONDUCTOR | , | 1 | 140 °C | 50 MHz | NO | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | unknown | SINGLE | NPN | 40 W | 1 A | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PN4339 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | HARRIS SEMICONDUCTOR | , | 150 °C | NO | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | unknown | N-CHANNEL | JUNCTION | 0.3 W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RFL1N20L | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | HARRIS SEMICONDUCTOR | 1 A | 1 | 150 °C | METAL | ROUND | CYLINDRICAL | NO | 3 | SILICON | 无 | e0 | EAR99 | 锡铅 | 逻辑电平兼容 | 8541.29.00.95 | BOTTOM | WIRE | unknown | O-MBCY-W3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | TO-205AF | 3.65 Ω | 200 V | METAL-OXIDE SEMICONDUCTOR | 8.3 W | 35 pF | 8.33 W | ||||||||||||||||||||||||||||||||||||||||
BUW40 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | HARRIS SEMICONDUCTOR | , | 1 | 140 °C | 50 MHz | NO | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | unknown | SINGLE | NPN | 40 W | 1 A | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF9640 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Transferred | HARRIS SEMICONDUCTOR | 11 A | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 134 ns | 90 ns | NO | 3 | SILICON | 1 | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8541.29.00.95 | SINGLE | THROUGH-HOLE | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | P-CHANNEL | TO-220AB | 0.5 Ω | 44 A | 200 V | 790 mJ | METAL-OXIDE SEMICONDUCTOR | 125 W | 125 W | ||||||||||||||||||||||||||||||||||||||
HUF76121D3ST | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | HARRIS SEMICONDUCTOR | SMALL OUTLINE, R-PSSO-G2 | 20 A | PLASTIC/EPOXY | RECTANGULAR | 小概要 | YES | 2 | SILICON | 1 | 12/24 (DC) Vmin | 2, blade terminal 6.3 mm non-insulatedmin | Obsolete | 0.3…0.85 mm2 | EAR99 | connector (socket) series 7022 | 逻辑电平兼容 | SINGLE | 鸥翼 | 25 mm | unknown | R-PSSO-G2 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | TO-252AA | 0.033 Ω | 30 V | METAL-OXIDE SEMICONDUCTOR | 18.5 (body) mm | 10 mm | ||||||||||||||||||||||||||||||||||||||||
JANTX2N6851 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | HARRIS SEMICONDUCTOR | TO-39, 3 PIN | 4 A | 150 °C | -55 °C | METAL | ROUND | CYLINDRICAL | 160 ns | 150 ns | NO | 3 | SILICON | 1 | Obsolete | EAR99 | BOTTOM | WIRE | unknown | O-MBCY-W3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | P-CHANNEL | TO-205AF | 0.8 Ω | 20 A | 200 V | 500 mJ | METAL-OXIDE SEMICONDUCTOR | 25 W | 50 pF | ||||||||||||||||||||||||||||||||||||||||
IRFP450 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | Obsolete | HARRIS SEMICONDUCTOR | 14 A | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 160 ns | 93 ns | 20 mA | 2-PLCC | NO | 2-PLCC | 3 | SILICON | 1 | Dialight | 5 ns | 无 | Tape & Reel (TR) | 597 | 3.20mm L x 2.80mm W | e0 | 活跃 | EAR99 | Quartz generator HCMOS/ TTL | 锡铅 | White | 8541.29.00.95 | SINGLE | THROUGH-HOLE | 20.4 mm | unknown | 16000 MHz | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | 3.1V | 131° | DRAIN | 10mA | 圆形,带平顶 | SWITCHING | 2.29mm Dia | N-CHANNEL | 135mcd | TO-247 | 0.4 Ω | 56 A | 500 V | METAL-OXIDE SEMICONDUCTOR | 180 W | DIL14 | 180 W | 5.4 mm | 12.8 mm | 2.15mm | |||||||||||||||
IRFP9140 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | HARRIS SEMICONDUCTOR | 19 A | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 140 ns | 120 ns | NO | 3 | SILICON | 1 | 无 | e0 | EAR99 | 锡铅 | 8541.29.00.95 | SINGLE | THROUGH-HOLE | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | P-CHANNEL | TO-247 | 0.2 Ω | 76 A | 100 V | 960 mJ | METAL-OXIDE SEMICONDUCTOR | 180 W | 150 W | ||||||||||||||||||||||||||||||||||||||
JANTX2N7225 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | HARRIS SEMICONDUCTOR | 27.4 A | 1 | PLASTIC/EPOXY | SQUARE | FLANGE MOUNT | NO | 3 | SILICON | Obsolete | EAR99 | 未说明 | 辐射硬化 | 8541.29.00.95 | SINGLE | THROUGH-HOLE | unknown | MILITARY STANDARD (USA) | S-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N-CHANNEL | TO-254AA | 0.1 Ω | 200 V | METAL-OXIDE SEMICONDUCTOR | 150 W | |||||||||||||||||||||||||||||||||||||||||||||
JANTX2N6798 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | HARRIS SEMICONDUCTOR | 5.5 A | 1 | 150 °C | METAL | ROUND | CYLINDRICAL | 90 ns | 80 ns | NO | 3 | SILICON | Obsolete | EAR99 | 未说明 | 辐射硬化 | 8541.29.00.95 | BOTTOM | WIRE | unknown | MILITARY STANDARD (USA) | O-MBCY-W3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | TO-205AF | 0.4 Ω | 22 A | 200 V | METAL-OXIDE SEMICONDUCTOR | 150 pF | 25 W | |||||||||||||||||||||||||||||||||||||||
2N5484 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | HARRIS SEMICONDUCTOR | 150 °C | NO | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | unknown | N-CHANNEL | JUNCTION | 0.31 W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTX2N6782 | Harris Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | HARRIS SEMICONDUCTOR | 3.5 A | 1 | 150 °C | METAL | ROUND | CYLINDRICAL | 45 ns | 40 ns | NO | 3 | SILICON | Obsolete | EAR99 | 未说明 | 辐射硬化 | 8541.29.00.95 | BOTTOM | WIRE | unknown | MILITARY STANDARD (USA) | O-MBCY-W3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | TO-205AF | 0.6 Ω | 14 A | 100 V | METAL-OXIDE SEMICONDUCTOR | 25 pF | 15 W |