制造商是'GeneSiC Semiconductor'
GeneSiC Semiconductor 二极管 - 整流器 - 阵列
(966)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 二极管元件材料 | 厂商 | 包装 | 已出版 | 系列 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 类型 | 电阻 | 最高工作温度 | 最小工作温度 | 应用 | HTS代码 | 子类别 | 螺距 | 技术 | 端子位置 | 方向 | 终端形式 | 峰值回流焊温度（摄氏度） | 时间@峰值回流温度-最大值(s) | 频率稳定性 | JESD-30代码 | 接头数量 | 对称性-最大值 | 配置 | 元素配置 | 速度 | 二极管类型 | 反向泄漏电流@ Vr | 不同 If 时电压 - 正向 (Vf) | 箱体转运 | 最大额定电压（直流） | 正向电流 | 最大反向漏电电流 | 工作温度 - 结点 | 最大浪涌电流 | 输出电流-最大值 | 电压 - 直流逆向（Vr）（最大值） | 平均整流电流（Io） | 正向电压 | 最大反向电压（DC） | 平均整流电流 | 产品类别 | 相位的数量 | 反向恢复时间 | 峰值反向电流 | 最大重复反向电压(Vrrm) | 最大非代表Pk前进电流 | 反向电压 | 二极管配置 | 反向电流-最大值 | 最大正向浪涌电流（Ifsm） | 重复峰值反向电压 | 产品 | 产品类别 | 达到SVHC | RoHS状态 | |||||||||||||||||||||||
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 | MBRT20045R | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | PRODUCTION (Last Updated: 4 months ago) | 底座安装 | 底座安装 | 三塔 | SILICON | 2 | Bulk | 2010 | yes | 活跃 | 1 (Unlimited) | 3 | 150°C | -40°C | POWER | UPPER | UNSPECIFIED | R-PUFM-X3 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 1mA @ 20V | 750mV @ 100A | ISOLATED | 200A | 1μA | 1.5kA | 100A | 200A DC | 45V | 200A | 1 | 1A | 45V | 1 Pair Common Anode | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MBR30045CT | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | 底座安装 | 底座安装 | 双塔 | SILICON | 2 | Bulk | 2012 | yes | 活跃 | 1 (Unlimited) | 2 | 175°C | -40°C | POWER | UPPER | UNSPECIFIED | 未说明 | 未说明 | R-PUFM-X2 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 8mA @ 20V | 650mV @ 150A | 300A | 150A | 300A DC | 750mV | 45V | 300A | 1 | 1μA | 45V | 1 Pair Common Cathode | 2.5kA | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MUR20020CT | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 175°C | PRODUCTION (Last Updated: 4 months ago) | 底座安装 | 底座安装 | 双塔 | SILICON | 2 | Bulk | 2010 | yes | 活跃 | 1 (Unlimited) | 2 | 超快恢复 | UPPER | UNSPECIFIED | R-PUFM-X2 | 共阴极 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 25μA @ 50V | 1.3V @ 100A | 200A | -55°C~150°C | 800A | 100A | 200A DC | 200V | 200A | 1 | 75 ns | 25μA | 200V | 1 Pair Common Cathode | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FST100200 | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 150°C | PRODUCTION (Last Updated: 5 months ago) | 底座安装 | 底座安装 | TO-249AB | SILICON | 2 | Bulk | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | POWER | 8541.10.00.80 | SINGLE | SOLDER LUG | R-PSFM-D3 | 共阴极 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 1mA @ 200V | 920mV @ 50A | ISOLATED | -55°C~150°C | 200V | 50A | 1 | 1000A | 1 Pair Common Cathode | 1000μA | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MBR300100CTR | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | 底座安装 | 底座安装 | 双塔 | SILICON | 2 | Bulk | yes | 活跃 | 1 (Unlimited) | 2 | EAR99 | 175°C | -40°C | POWER | 8541.10.00.80 | UPPER | UNSPECIFIED | 未说明 | 未说明 | R-PUFM-X2 | 共阳极 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 8mA @ 20V | 840mV @ 150A | 300A | 1μA | 2.5kA | 150A | 300A DC | 100V | 300A | 1 | 1A | 100V | 1 Pair Common Anode | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FST10080 | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | 底座安装 | 底座安装 | TO-249AB | SILICON | 2 | Bulk | 2010 | yes | 活跃 | 1 (Unlimited) | 3 | 125°C | -40°C | POWER | SINGLE | SOLDER LUG | R-PSFM-D3 | 共阴极 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 2mA @ 20V | 840mV @ 100A | ISOLATED | 100A | 1μA | -55°C~150°C | 1kA | 50A | 80V | 100A | 1 | 1A | 80V | 1 Pair Common Cathode | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MBR200150CT | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 150°C | PRODUCTION (Last Updated: 5 months ago) | 底座安装 | 底座安装 | 双塔 | SILICON | 2 | Bulk | yes | 活跃 | 1 (Unlimited) | 2 | EAR99 | POWER | 8541.10.00.80 | UPPER | UNSPECIFIED | 未说明 | 未说明 | R-PUFM-X2 | 共阴极 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 3mA @ 150V | 880mV @ 100A | -55°C~150°C | 150V | 100A | 1 | 1500A | 1 Pair Common Cathode | 3000μA | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MBR120200CT | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 150°C | PRODUCTION (Last Updated: 5 months ago) | 底座安装 | 底座安装 | 双塔 | SILICON | 2 | Bulk | yes | 活跃 | 1 (Unlimited) | 2 | EAR99 | POWER | 8541.10.00.80 | UPPER | UNSPECIFIED | R-PUFM-X2 | 共阴极 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 1mA @ 200V | 920mV @ 60A | -55°C~150°C | 200V | 60A | 1 | 800A | 1 Pair Common Cathode | 1000μA | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MBR200150CTR | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 150°C | PRODUCTION (Last Updated: 5 months ago) | 底座安装 | 底座安装 | 双塔 | SILICON | 2 | Bulk | 2016 | yes | 活跃 | 1 (Unlimited) | 2 | POWER | UPPER | UNSPECIFIED | R-PUFM-X2 | 共阳极 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 3mA @ 150V | 880mV @ 100A | -55°C~150°C | 150V | 100A | 1 | 1500A | 1 Pair Common Anode | 3000μA | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MURT30020R | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 150°C | -55°C | PRODUCTION (Last Updated: 5 months ago) | 底座安装 | 底座安装 | 三塔 | SILICON | 2 | Bulk | yes | 活跃 | 1 (Unlimited) | 3 | 超快恢复 | UPPER | UNSPECIFIED | R-PUFM-X3 | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 25μA @ 50V | 1.3V @ 150A | ISOLATED | 2.75kA | 150A | 300A DC | 200V | 300A | 1 | 100 ns | 25μA | 2750A | 200V | 1 Pair Common Anode | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MUR20005CTR | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 175°C | PRODUCTION (Last Updated: 4 months ago) | 底座安装 | 底座安装 | 双塔 | SILICON | 2 | Bulk | 2010 | yes | 活跃 | 1 (Unlimited) | 2 | 超快恢复 | UPPER | UNSPECIFIED | R-PUFM-X2 | 共阳极 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 25μA @ 50V | 1.3V @ 100A | -55°C~150°C | 800A | 100A | 200A DC | 50V | 200A | 1 | 75 ns | 25μA | 50V | 1 Pair Common Anode | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MBR400100CTR | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | Chassis Mount, Through Hole | 底座安装 | 双塔 | 2 | SILICON | 2 | Bulk | 活跃 | 1 (Unlimited) | 2 | Solder | 175°C | -40°C | POWER | 4.2mm | UPPER | Straight | UNSPECIFIED | 未说明 | 未说明 | 14 | 共阳极 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky, Reverse Polarity | 5mA @ 20V | 840mV @ 200A | 600.6kV | 200A | 1μA | -55°C~150°C | 3kA | 400A DC | 840mV | 100V | 400A | 1 | 1A | 100V | 1 Pair Common Anode | 3kA | 无SVHC | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MURT10010R | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 150°C | -55°C | PRODUCTION (Last Updated: 5 months ago) | 底座安装 | 底座安装 | 三塔 | SILICON | 2 | Bulk | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 超快恢复 | 8541.10.00.80 | UPPER | UNSPECIFIED | R-PUFM-X3 | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 25μA @ 50V | 1.3V @ 50A | ISOLATED | 400A | 50A | 100A DC | 100V | 100A | 1 | 75 ns | 25μA | 1500A | 100V | 1 Pair Common Anode | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MBR400100CT | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | Chassis Mount, Through Hole | 底座安装 | 双塔 | 2 | SILICON | 2 | Bulk | 2003 | yes | 活跃 | 1 (Unlimited) | 2 | Solder | 175°C | -40°C | POWER | 4.2mm | UPPER | Straight | UNSPECIFIED | 未说明 | 未说明 | 14 | 共阴极 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 5mA @ 20V | 840mV @ 200A | 600.6kV | 200A | 1μA | -55°C~150°C | 3kA | 400A DC | 840mV | 100V | 400A | 1 | 1A | 100V | 1 Pair Common Cathode | 无SVHC | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||
| MBR120150CTR | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 150°C | PRODUCTION (Last Updated: 5 months ago) | 底座安装 | 底座安装 | 双塔 | SILICON | 2 | Bulk | yes | 活跃 | 1 (Unlimited) | 2 | POWER | UPPER | UNSPECIFIED | R-PUFM-X2 | 共阳极 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 1mA @ 150V | 880mV @ 60A | -55°C~150°C | 150V | 60A | 1 | 800A | 1 Pair Common Anode | 1000μA | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR400150CTR | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 150°C | 底座安装 | 底座安装 | 双塔 | SILICON | 2 | Bulk | 活跃 | 1 (Unlimited) | 2 | POWER | UPPER | UNSPECIFIED | R-PUFM-X2 | 共阳极 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 3mA @ 150V | 880mV @ 200A | -55°C~150°C | 150V | 200A | 1 | 3000A | 1 Pair Common Anode | 3000μA | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MURTA60020R | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 150°C | -55°C | PRODUCTION (Last Updated: 5 months ago) | 底座安装 | 底座安装 | 三塔 | SILICON | 2 | Bulk | 2013 | yes | 活跃 | 1 (Unlimited) | 3 | 超快恢复 | UPPER | UNSPECIFIED | R-PUFM-X3 | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 25μA @ 50V | 1.3V @ 300A | ISOLATED | 4.4kA | 300A | 600A DC | 200V | 600A | 1 | 200 ns | 25μA | 4400A | 200V | 1 Pair Common Anode | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MURT10040 | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 150°C | PRODUCTION (Last Updated: 5 months ago) | 底座安装 | 三塔 | NO | SILICON | 2 | Bulk | yes | 活跃 | 1 (Unlimited) | 3 | 283Ohm | 超快恢复 | UPPER | UNSPECIFIED | R-PUFM-X3 | COMMON CATHODE, 2 ELEMENTS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 25μA @ 50V | 1.35V @ 50A | ISOLATED | -40°C~175°C | 400A | 50A | 100A DC | 1 | 90ns | 25μA | 1500A | 400V | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MUR10020CT | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 150°C | PRODUCTION (Last Updated: 4 months ago) | 底座安装 | 底座安装 | 双塔 | SILICON | 2 | Bulk | 2013 | yes | 活跃 | 1 (Unlimited) | 2 | EAR99 | 超快恢复 | 8541.10.00.80 | UPPER | UNSPECIFIED | 未说明 | 未说明 | R-PUFM-X2 | 共阴极 | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 25μA @ 50V | 1.3V @ 50A | 100A | -55°C~150°C | 400A | 50A | 100A DC | 200V | 100A | 1 | 75 ns | 25μA | 200V | 1 Pair Common Cathode | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MSRT15060D | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | MSRT150 | 活跃 | 150A | 600 V | + 150 C | - 55 C | 40 | SMD/SMT | GeneSiC Semiconductor | GeneSiC Semiconductor | 150 A | Details | 2250 A | Discrete Semiconductor Modules | 底座安装 | 三塔 | 三塔 | GeneSiC Semiconductor | Bulk | Bulk | - | Standard Recovery Rectifier Module | Discrete Semiconductor Modules | Standard | Standard Recovery >500ns, > 200mA (Io) | 10 µA @ 600 V | 1.1 V @ 150 A | -55°C ~ 150°C | 600 V | 1 Pair Series Connection | Rectifier Modules | Discrete Semiconductor Modules | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSRT200160D | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | MSRT200 | 活跃 | 200A | 1600 V | + 150 C | - 55 C | 40 | SMD/SMT | GeneSiC Semiconductor | GeneSiC Semiconductor | 200 A | Details | 3000 A | Discrete Semiconductor Modules | 底座安装 | 三塔 | 三塔 | GeneSiC Semiconductor | Bulk | Bulk | - | Standard Recovery Rectifier Module | Discrete Semiconductor Modules | Standard | Standard Recovery >500ns, > 200mA (Io) | 10 µA @ 1600 V | 1.1 V @ 200 A | -55°C ~ 150°C | 1600 V | 1 Pair Series Connection | Rectifier Modules | Discrete Semiconductor Modules | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSRT150120D | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | MSRT150 | 活跃 | 150A | 1200 V | + 150 C | - 55 C | 40 | SMD/SMT | GeneSiC Semiconductor | GeneSiC Semiconductor | 150 A | Details | 2250 A | Discrete Semiconductor Modules | 底座安装 | 三塔 | 三塔 | GeneSiC Semiconductor | Bulk | Bulk | - | Standard Recovery Rectifier Module | Discrete Semiconductor Modules | Standard | Standard Recovery >500ns, > 200mA (Io) | 10 µA @ 1200 V | 1.1 V @ 150 A | -55°C ~ 150°C | 1200 V | 1 Pair Series Connection | Rectifier Modules | Discrete Semiconductor Modules | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| G2SB01 | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FST6360SM | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GD2X30MPS12N | GeneSiC Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | -40C to 85C | 3.63(V) | 2.97(V) | 无 | - | Tube | GD2X | 活跃 | 52A (DC) | 底座安装 | QFN | SOT-227 | GeneSiC Semiconductor | 25 | Bulk | SiC Schottky MPS™ | CLOCK OSCILLATOR | ±50(ppm) | 55(%) | No Recovery Time > 500mA (Io) | 碳化硅肖特基 | -55°C ~ 175°C | 1200 V | Dual Isolated | 1.2kV |