制造商是'Advanced'
Advanced 晶体管 - 特殊用途
(95)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 表面安装 | 终端数量 | 晶体管元件材料 | JESD-609代码 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 参考标准 | JESD-30代码 | 资历状况 | 配置 | 操作模式 | 箱体转运 | 晶体管应用 | 极性/通道类型 | JEDEC-95代码 | 漏极-源极导通最大电阻 | 脉冲漏极电流-最大值(IDM) | DS 击穿电压-最小值 | 雪崩能量等级（Eas） | 场效应管技术 | 最大耗散功率(Abs) | 反馈上限-最大值 (Crss) | 环境耗散-最大值 | ||||||||||||
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 | APT6017LLL | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Transferred | ADVANCED POWER TECHNOLOGY INC | FLANGE MOUNT, R-PSFM-T3 | 35 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 3 | SILICON | 无 | e0 | EAR99 | 锡铅 | SINGLE | THROUGH-HOLE | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | TO-264AA | 0.17 Ω | 140 A | 600 V | 1600 mJ | METAL-OXIDE SEMICONDUCTOR | 500 W | ||||||||||
| APT5025AN | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | ADVANCED POWER TECHNOLOGY INC | FLANGE MOUNT, O-MBFM-P2 | 20 A | 1 | 150 °C | METAL | ROUND | FLANGE MOUNT | 2 | SILICON | 无 | e0 | EAR99 | 锡铅 | 8541.29.00.95 | BOTTOM | PIN/PEG | unknown | O-MBFM-P2 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N-CHANNEL | TO-204AA | 0.25 Ω | 80 A | 500 V | METAL-OXIDE SEMICONDUCTOR | 230 W | 230 W | ||||||||||
| APT6040BNR | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | ADVANCED POWER TECHNOLOGY INC | FLANGE MOUNT, R-PSFM-T3 | 18 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 205 ns | 66 ns | 3 | SILICON | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | 雪崩 额定 | 8541.29.00.95 | SINGLE | THROUGH-HOLE | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N-CHANNEL | TO-247AD | 0.4 Ω | 72 A | 600 V | 1210 mJ | METAL-OXIDE SEMICONDUCTOR | 310 W | 225 pF | 310 W | |||||
| APT903R5DN | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | ADVANCED POWER TECHNOLOGY INC | , | 4.5 A | 1 | Obsolete | EAR99 | unknown | SINGLE | 增强型MOSFET | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 180 W | ||||||||||||||||||||||||||||||
| IRF622 | Advanced Microelectronic Products Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | ADVANCED MICROELECTRONIC PRODUCTS INC | , | 4 A | 1 | 150 °C | 接触制造商 | EAR99 | unknown | SINGLE | 增强型MOSFET | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 40 W | |||||||||||||||||||||||||||||
| APT903R5BN | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | ADVANCED POWER TECHNOLOGY INC | , | 4.5 A | 1 | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | unknown | SINGLE | 增强型MOSFET | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 180 W | |||||||||||||||||||||||||||
| APTX100ED | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||
| APT5010B2LC | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | ADVANCED POWER TECHNOLOGY INC | IN-LINE, R-PSIP-T3 | 47 A | 1 | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | 3 | SILICON | Obsolete | EAR99 | HIGH VOLTAGE | SINGLE | THROUGH-HOLE | unknown | R-PSIP-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | 0.1 Ω | 188 A | 500 V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | |||||||||||||||
| APT6015B2VFR | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Transferred | ADVANCED POWER TECHNOLOGY INC | IN-LINE, R-PSIP-T3 | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | 38 A | 3 | SILICON | 无 | e0 | EAR99 | 锡铅 | 雪崩 额定 | SINGLE | THROUGH-HOLE | unknown | R-PSIP-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | 0.15 Ω | 152 A | 600 V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | 520 W | ||||||||||
| APT5016SFLL | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | ADVANCED POWER TECHNOLOGY INC | SMALL OUTLINE, R-PSSO-G2 | 30 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | 小概要 | 2 | SILICON | 无 | e0 | EAR99 | 锡铅 | SINGLE | 鸥翼 | unknown | R-PSSO-G2 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | 0.16 Ω | 120 A | 500 V | 1300 mJ | METAL-OXIDE SEMICONDUCTOR | 325 W | |||||||||||
| APT5012JNU3 | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | ADVANCED POWER TECHNOLOGY INC | FLANGE MOUNT, R-PUFM-D4 | 43 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 4 | SILICON | Obsolete | EAR99 | MOTOR DRIVE BUCK CONFIGURATION | 8541.29.00.95 | UPPER | SOLDER LUG | unknown | R-PUFM-D4 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | ISOLATED | N-CHANNEL | 0.12 Ω | 1000 V | METAL-OXIDE SEMICONDUCTOR | 520 W | 520 W | ||||||||||||||
| APT47N60BCF | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ADVANCED POWER TECHNOLOGY INC | Transferred | EAR99 | unknown | |||||||||||||||||||||||||||||||||||||||
| APT50M80JLC | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | ADVANCED POWER TECHNOLOGY INC | ISOTOP-4 | 52 A | 1 | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 4 | SILICON | 有 | EAR99 | 快速切换 | UPPER | UNSPECIFIED | 未说明 | unknown | 未说明 | R-PUFM-X4 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | ISOLATED | SWITCHING | N-CHANNEL | 0.08 Ω | 208 A | 500 V | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | ||||||||||||
| APT5017BLC | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | ADVANCED POWER TECHNOLOGY INC | FLANGE MOUNT, R-PSFM-T3 | 30 A | 1 | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 3 | SILICON | Obsolete | EAR99 | HIGH VOLTAGE, AVALANCHE RATING | SINGLE | THROUGH-HOLE | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | TO-247 | 0.17 Ω | 120 A | 500 V | 1300 mJ | METAL-OXIDE SEMICONDUCTOR | ||||||||||||||
| APT5020HJN | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | ADVANCED POWER TECHNOLOGY INC | FLANGE MOUNT, R-PUFM-X5 | 28 A | 2 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 237 ns | 124 ns | 5 | SILICON | Obsolete | EAR99 | 8541.29.00.95 | UPPER | UNSPECIFIED | unknown | R-PUFM-X5 | 不合格 | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | ISOLATED | SWITCHING | N-CHANNEL | 0.2 Ω | 112 A | 500 V | METAL-OXIDE SEMICONDUCTOR | 360 W | 350 pF | 360 W | ||||||||||
| APT4030BNR | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | ADVANCED POWER TECHNOLOGY INC | FLANGE MOUNT, R-PSFM-T3 | 18.5 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 3 | SILICON | 无 | e0 | EAR99 | 锡铅 | 8541.29.00.95 | SINGLE | THROUGH-HOLE | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N-CHANNEL | TO-247AD | 0.3 Ω | 74 A | 400 V | 800 mJ | METAL-OXIDE SEMICONDUCTOR | 240 W | 240 W | |||||||||
| APT11026JFLL | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Transferred | ADVANCED POWER TECHNOLOGY INC | FLANGE MOUNT, R-XUFM-X4 | 33 A | 1 | UNSPECIFIED | RECTANGULAR | FLANGE MOUNT | 4 | SILICON | 有 | EAR99 | UPPER | UNSPECIFIED | 未说明 | unknown | 未说明 | R-XUFM-X4 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | ISOLATED | SWITCHING | N-CHANNEL | 0.26 Ω | 134 A | 1100 V | 3600 mJ | METAL-OXIDE SEMICONDUCTOR | |||||||||||||
| APT5085BN | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | ADVANCED POWER TECHNOLOGY INC | FLANGE MOUNT, R-PSFM-T3 | 9.5 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 70 ns | 48 ns | 3 | SILICON | 无 | e0 | EAR99 | 锡铅 | 8541.29.00.95 | SINGLE | THROUGH-HOLE | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N-CHANNEL | TO-247AD | 0.85 Ω | 38 A | 500 V | METAL-OXIDE SEMICONDUCTOR | 180 W | 94 pF | 180 W | |||||||
| APT6040BVFR | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Transferred | ADVANCED POWER TECHNOLOGY INC | FLANGE MOUNT, R-PSFM-T3 | 16 A | 1 | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 3 | SILICON | 无 | EAR99 | 雪崩能源评级 | SINGLE | THROUGH-HOLE | 未说明 | unknown | 未说明 | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | TO-247AD | 0.4 Ω | 64 A | 600 V | 960 mJ | METAL-OXIDE SEMICONDUCTOR | |||||||||||
| APT5030BNR | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | ADVANCED POWER TECHNOLOGY INC | FLANGE MOUNT, R-PSFM-T3 | 21 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 220 ns | 90 ns | 3 | SILICON | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | 雪崩 额定 | 8541.29.00.95 | SINGLE | THROUGH-HOLE | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N-CHANNEL | TO-247AD | 0.3 Ω | 84 A | 500 V | 1210 mJ | METAL-OXIDE SEMICONDUCTOR | 310 W | 270 pF | 360 W | |||||
| APT601R3BN | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | ADVANCED POWER TECHNOLOGY INC | FLANGE MOUNT, R-PSFM-T3 | 7.5 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 71 ns | 44 ns | 3 | SILICON | 无 | e0 | EAR99 | 锡铅 | 8541.29.00.95 | SINGLE | THROUGH-HOLE | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N-CHANNEL | TO-247AD | 1.3 Ω | 30 A | 600 V | METAL-OXIDE SEMICONDUCTOR | 180 W | 81 pF | 180 W | |||||||
| APT3525BN | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | ADVANCED POWER TECHNOLOGY INC | FLANGE MOUNT, R-PSFM-T3 | 23 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 170 ns | 85 ns | 3 | SILICON | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8541.29.00.95 | SINGLE | THROUGH-HOLE | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N-CHANNEL | TO-247AD | 0.25 Ω | 92 A | 350 V | METAL-OXIDE SEMICONDUCTOR | 310 W | 310 pF | 310 W | |||||||
| APT3555DN | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | ADVANCED POWER TECHNOLOGY INC | , | 12 A | 1 | Obsolete | EAR99 | unknown | SINGLE | 增强型MOSFET | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 180 W | ||||||||||||||||||||||||||||||
| APT3565BN | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | ADVANCED POWER TECHNOLOGY INC | FLANGE MOUNT, R-PSFM-T3 | 11 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 75 ns | 52 ns | 3 | SILICON | 无 | e0 | EAR99 | 锡铅 | 8541.29.00.95 | SINGLE | THROUGH-HOLE | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N-CHANNEL | TO-247AD | 0.65 Ω | 44 A | 350 V | METAL-OXIDE SEMICONDUCTOR | 180 W | 115 pF | 180 W | |||||||
| APT55M85JFLL | Advanced Power Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Transferred | ADVANCED POWER TECHNOLOGY INC | FLANGE MOUNT, R-PUFM-X4 | 51 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 4 | SILICON | 有 | EAR99 | UPPER | UNSPECIFIED | 未说明 | unknown | 未说明 | UL 认证 | R-PUFM-X4 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | ISOLATED | SWITCHING | N-CHANNEL | 0.085 Ω | 204 A | 550 V | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | 521 W |