制造商是'Advanced'
Advanced 晶体管 - FET,MOSFET - 射频
(50)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 安装类型 | 包装/外壳 | 表面安装 | 供应商器件包装 | 终端数量 | 晶体管元件材料 | 厂商 | 操作温度 | 包装 | 系列 | 尺寸/尺寸 | 容差 | JESD-609代码 | 零件状态 | 终止次数 | ECCN 代码 | 温度系数 | 类型 | 电阻 | 端子表面处理 | 组成 | 应用 | 功率(瓦特) | 附加功能 | 电容量 | 子类别 | 技术 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | JESD-30代码 | 资历状况 | 工作频率 | 失败率 | 引线间距 | 配置 | 操作模式 | 引线样式 | 箱体转运 | 输出功率 | 晶体管应用 | 极性/通道类型 | 产品类别 | 增益 | 最大漏极电流 (Abs) (ID) | DS 击穿电压-最小值 | 场效应管技术 | 最大耗散功率(Abs) | 最高频段 | 特征 | 产品类别 | 座位高度(最大) | 厚度(最大) | 评级结果 | ||||||||||||||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | AGR21060EF | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | RS73G1JRT | 活跃 | 10 | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Details | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT | CERAMIC, METAL-SEALED COFIRED | 未说明 | 200 °C | AGR21060EF | RECTANGULAR | 1 | 活跃 | BROADCOM LTD | 5.25 | 射频MOSFET晶体管 | 0603 (1608 Metric) | YES | 0603 | 2 | SILICON | KOA Speer Electronics, Inc. | Tape & Reel (TR) | -55°C ~ 155°C | Tray | RS73-RT | 0.063 L x 0.031 W (1.60mm x 0.80mm) | ±0.25% | e0 | 2 | EAR99 | ±50ppm/°C | 43.2 Ohms | 锡铅 | 厚膜 | 0.2W, 1/5W | HIGH RELIABILITY | MOSFETs | Si | DUAL | FLAT | 未说明 | compliant | R-CDFM-F2 | 不合格 | - | SINGLE | 增强型MOSFET | AMPLIFIER | N-CHANNEL | 65 V | METAL-OXIDE SEMICONDUCTOR | 175 W | S带 | Automotive AEC-Q200 | 射频MOSFET晶体管 | 0.022 (0.55mm) | AEC-Q200 | ||||||||||||||||||||||||||||
![]() | AGR09090EF | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Surface Mount, MLCC | 活跃 | 300V | 10 | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Details | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT | CERAMIC, METAL-SEALED COFIRED | 30 | 200 °C | AGR09090EF | RECTANGULAR | 1 | 活跃 | BROADCOM LTD | 5.31 | 8.5 A | 射频MOSFET晶体管 | 1111 (2828 Metric) | YES | 2 | SILICON | American Technical Ceramics | Tape & Reel (TR);Cut Tape (CT);Digi-Reel®; | -55°C ~ 125°C | Tray | Porcelain Superchip® ATC 100B | 0.110 L x 0.110 W (2.79mm x 2.79mm) | ±5% | e0 | EAR99 | P90 | 锡铅 | RF, Microwave, High Frequency, Bypass, Decoupling | HIGH RELIABILITY | 180 pF | MOSFETs | Si | DUAL | FLAT | 225 | compliant | R-CDFM-F2 | 不合格 | - | - | SINGLE | 增强型MOSFET | - | SOURCE | AMPLIFIER | N-CHANNEL | 8.5 A | 65 V | METAL-OXIDE SEMICONDUCTOR | 219 W | 超高频段 | High Q, Low Loss, Low ESL | 射频MOSFET晶体管 | - | 0.102 (2.59mm) | - | ||||||||||||||||||||||||
![]() | AGR09180EF | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Details | FLANGE MOUNT, R-CDFM-F4 | FLANGE MOUNT | CERAMIC, METAL-SEALED COFIRED | 30 | 150 °C | AGR09180EF | RECTANGULAR | 2 | 活跃 | AVAGO TECHNOLOGIES INC | 5.25 | 射频MOSFET晶体管 | YES | 4 | SILICON | 10 | Tray | e0 | EAR99 | 锡铅 | HIGH RELIABILITY | MOSFETs | Si | DUAL | FLAT | 225 | compliant | R-CDFM-F4 | 不合格 | COMMON SOURCE, 2 ELEMENTS | 增强型MOSFET | SOURCE | AMPLIFIER | N-CHANNEL | 65 V | METAL-OXIDE SEMICONDUCTOR | 500 W | 超高频段 | 射频MOSFET晶体管 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | AGR26180EF | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | FLANGE MOUNT | CERAMIC, METAL-SEALED COFIRED | 30 | 200 °C | AGR26180EF | RECTANGULAR | Broadcom Limited | 1 | 活跃 | BROADCOM LTD | 5.31 | YES | 4 | SILICON | FLANGE MOUNT, R-CDFM-F4 | e0 | EAR99 | 锡铅 | HIGH RELIABILITY | FET 通用电源 | DUAL | FLAT | 225 | compliant | R-CDFM-F4 | 不合格 | SINGLE | 增强型MOSFET | SOURCE | N-CHANNEL | 65 V | METAL-OXIDE SEMICONDUCTOR | 500 W | 超高频段 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MRF157 | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Advanced Semiconductor, Inc. | Details | 射频MOSFET晶体管 | Advanced Semiconductor, Inc. | Tray | 射频功率MOSFET | MOSFETs | Si | 射频MOSFET晶体管 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BLF177 | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1 | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Details | 110 V | N-Channel | + 200 C | - 65 C | 法兰安装 | 300 mOhms | 16 A | 射频MOSFET晶体管 | 0.436099 oz | Tray | MOSFETs | Si | - | - | - | 射频MOSFET晶体管 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MRF492 | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Details | 射频MOSFET晶体管 | 1 | Tray | MOSFETs | Si | 射频MOSFET晶体管 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AGR09070EF | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Details | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT | CERAMIC, METAL-SEALED COFIRED | 30 | 200 °C | AGR09070EF | RECTANGULAR | 1 | 活跃 | BROADCOM LTD | 5.31 | 8.5 A | 射频MOSFET晶体管 | YES | 2 | SILICON | 10 | Tray | e0 | EAR99 | 锡铅 | HIGH RELIABILITY | MOSFETs | Si | DUAL | FLAT | 225 | compliant | R-CDFM-F2 | 不合格 | SINGLE | 增强型MOSFET | SOURCE | AMPLIFIER | N-CHANNEL | 8.5 A | 65 V | METAL-OXIDE SEMICONDUCTOR | 265 W | 超高频段 | 射频MOSFET晶体管 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | AGR21030EF | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Details | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT | CERAMIC, METAL-SEALED COFIRED | 30 | 200 °C | AGR21030EF | RECTANGULAR | 1 | 活跃 | BROADCOM LTD | 5.31 | 射频MOSFET晶体管 | YES | 2 | SILICON | 10 | Tray | e0 | EAR99 | 锡铅 | HIGH RELIABILITY | MOSFETs | Si | DUAL | FLAT | 225 | compliant | R-CDFM-F2 | 不合格 | SINGLE | 增强型MOSFET | SOURCE | AMPLIFIER | N-CHANNEL | 65 V | METAL-OXIDE SEMICONDUCTOR | 87.5 W | S带 | 射频MOSFET晶体管 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | MRF151GB | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 V | 500 W | N-Channel | + 200 C | 40 V | 0.001058 oz | - 65 C | SMD/SMT | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Details | 40 A | 射频MOSFET晶体管 | SOT-262A | 125 V | Tray | 射频功率MOSFET | MOSFETs | Si | 175 MHz | Dual | 射频MOSFET晶体管 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SD2942 | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 500 W | N-Channel | + 200 C | 4 V | 1.132118 oz | - 65 C | 1 | SMD/SMT | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Details | 40 A | 5 mOhms | 射频MOSFET晶体管 | M244 | 130 V | Tray | 射频功率MOSFET | MOSFETs | Si | 250 MHz | Single | 350 W | 15 dB | 射频MOSFET晶体管 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AGR09085EF | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Details | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT | CERAMIC, METAL-SEALED COFIRED | 30 | 150 °C | AGR09085EF | RECTANGULAR | 1 | 活跃 | BROADCOM LTD | 5.25 | 8.5 A | 射频MOSFET晶体管 | YES | 2 | SILICON | 10 | Tray | e0 | EAR99 | 锡铅 | HIGH RELIABILITY | MOSFETs | Si | DUAL | FLAT | 225 | compliant | R-CDFM-F2 | 不合格 | SINGLE | 增强型MOSFET | SOURCE | AMPLIFIER | N-CHANNEL | 8.5 A | 65 V | METAL-OXIDE SEMICONDUCTOR | 超高频段 | 射频MOSFET晶体管 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | AGR18090EF | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Details | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT | CERAMIC, METAL-SEALED COFIRED | 30 | 200 °C | AGR18090EF | RECTANGULAR | 1 | 活跃 | AVAGO TECHNOLOGIES INC | 5.25 | 8.5 A | 射频MOSFET晶体管 | YES | 2 | SILICON | 10 | Tray | e0 | EAR99 | 锡铅 | HIGH RELIABILITY | MOSFETs | Si | DUAL | FLAT | 225 | compliant | R-CDFM-F2 | 不合格 | SINGLE | 增强型MOSFET | SOURCE | AMPLIFIER | N-CHANNEL | 8.5 A | 65 V | METAL-OXIDE SEMICONDUCTOR | L带 | 射频MOSFET晶体管 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | AGR18030EF | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Details | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT | CERAMIC, METAL-SEALED COFIRED | 30 | 200 °C | AGR18030EF | RECTANGULAR | 1 | 活跃 | BROADCOM LTD | 5.25 | 6.2 A | 射频MOSFET晶体管 | YES | 2 | SILICON | 10 | Tray | e0 | EAR99 | 锡铅 | HIGH RELIABILITY | MOSFETs | Si | DUAL | FLAT | 240 | compliant | R-CDFM-F2 | 不合格 | SINGLE | 增强型MOSFET | SOURCE | AMPLIFIER | N-CHANNEL | 65 V | METAL-OXIDE SEMICONDUCTOR | L带 | 射频MOSFET晶体管 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | BLF278 | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Dual N-Channel | + 200 C | - 65 C | 法兰安装 | 5 mOhms | 40 A | 125 V | Si | 175 MHz | 300 W | 16 dB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BLF245 | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | N-Channel | + 150 C | - 65 C | 法兰安装 | - | 6 A | 65 V | Si | 175 MHz | 30 W | 16 dB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AGR18060EF | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Details | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT | CERAMIC, METAL-SEALED COFIRED | 30 | 200 °C | AGR18060EF | RECTANGULAR | 1 | 活跃 | AVAGO TECHNOLOGIES INC | 5.25 | 6.2 A | 射频MOSFET晶体管 | YES | 2 | SILICON | 10 | Tray | e0 | EAR99 | 锡铅 | HIGH RELIABILITY | MOSFETs | Si | DUAL | FLAT | 225 | compliant | R-CDFM-F2 | 不合格 | SINGLE | 增强型MOSFET | SOURCE | AMPLIFIER | N-CHANNEL | 6.2 A | 65 V | METAL-OXIDE SEMICONDUCTOR | L带 | 射频MOSFET晶体管 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | AGR18045EF | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Details | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT | CERAMIC, METAL-SEALED COFIRED | 未说明 | 无 | AGR18045EF | RECTANGULAR | 1 | Obsolete | QORVO INC | 5.78 | 射频MOSFET晶体管 | YES | 2 | SILICON | 10 | Tray | EAR99 | HIGH RELIABILITY | MOSFETs | Si | DUAL | FLAT | 未说明 | compliant | R-CDFM-F2 | 不合格 | SINGLE | 增强型MOSFET | SOURCE | AMPLIFIER | N-CHANNEL | 65 V | METAL-OXIDE SEMICONDUCTOR | L带 | 射频MOSFET晶体管 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MRF151GC | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 V | 500 W | N-Channel | + 200 C | 40 V | 0.001058 oz | - 65 C | SMD/SMT | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Details | 40 A | 射频MOSFET晶体管 | SOT-262A | 125 V | Tray | 射频功率MOSFET | MOSFETs | Si | 175 MHz | Dual | 射频MOSFET晶体管 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MRF137 | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Details | 射频MOSFET晶体管 | 1 | Tray | MOSFETs | Si | 射频MOSFET晶体管 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AGR19125EF | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Details | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT | CERAMIC, METAL-SEALED COFIRED | 30 | 200 °C | AGR19125EF | RECTANGULAR | 1 | 活跃 | BROADCOM LTD | 5.25 | 射频MOSFET晶体管 | YES | 2 | SILICON | 10 | Tray | e0 | EAR99 | 锡铅 | HIGH RELIABILITY | MOSFETs | Si | DUAL | FLAT | 225 | compliant | R-CDFM-F2 | 不合格 | SINGLE | 增强型MOSFET | SOURCE | AMPLIFIER | N-CHANNEL | 65 V | METAL-OXIDE SEMICONDUCTOR | 350 W | L带 | 射频MOSFET晶体管 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | MRF141G | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Advanced Semiconductor, Inc. | Details | 射频MOSFET晶体管 | Axial | Axial | Advanced Semiconductor, Inc. | -65°C ~ 175°C | Bulk | Military, MIL-PRF-55182/01, RNC55 | 0.094 Dia x 0.250 L (2.39mm x 6.35mm) | ±0.5% | 活跃 | 2 | ±25ppm/°C | 1.2 kOhms | Metal Film | 0.125W, 1/8W | MOSFETs | Si | S (0.001%) | Military, Moisture Resistant, Weldable | 射频MOSFET晶体管 | -- | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BLF861A | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1 | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Details | 65 V | N-Channel | + 200 C | - 65 C | 法兰安装 | 160 mOhms | 18 A | 射频MOSFET晶体管 | Axial | Axial | 0.619058 oz | -55°C ~ 250°C | Bulk | Military, MIL-PRF-39007, RWR80S | 0.094 Dia x 0.406 L (2.39mm x 10.31mm) | ±1% | 活跃 | 2 | ±20ppm/°C | 射频功率MOSFET | 330 Ohms | Wirewound | 2W | MOSFETs | Si | 860 MHz | R (0.01%) | 150 W | 14.5 dB | Military, Moisture Resistant | 射频MOSFET晶体管 | -- | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AGR21090EF | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Details | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT | CERAMIC, METAL-SEALED COFIRED | 30 | 200 °C | AGR21090EF | RECTANGULAR | 1 | 活跃 | AVAGO TECHNOLOGIES INC | 5.25 | 射频MOSFET晶体管 | Axial | YES | Axial | 2 | SILICON | 10 | -65°C ~ 175°C | Bulk | Military, MIL-PRF-55182/01, RNC55 | 0.094 Dia x 0.250 L (2.39mm x 6.35mm) | ±0.5% | e0 | 活跃 | 2 | EAR99 | ±25ppm/°C | 124 kOhms | 锡铅 | Metal Film | 0.125W, 1/8W | HIGH RELIABILITY | MOSFETs | Si | DUAL | FLAT | 225 | compliant | R-CDFM-F2 | 不合格 | S (0.001%) | SINGLE | 增强型MOSFET | SOURCE | AMPLIFIER | N-CHANNEL | 65 V | METAL-OXIDE SEMICONDUCTOR | 250 W | S带 | Military, Moisture Resistant, Weldable | 射频MOSFET晶体管 | -- | |||||||||||||||||||||||||||||||
![]() | AGR26125EF | Advanced | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Details | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT | CERAMIC, METAL-SEALED COFIRED | 30 | AGR26125EF | RECTANGULAR | 1 | 活跃 | BROADCOM LTD | 5.25 | 射频MOSFET晶体管 | YES | 2 | SILICON | 10 | Tray | e0 | EAR99 | 锡铅 | HIGH RELIABILITY | MOSFETs | Si | DUAL | FLAT | 225 | compliant | R-CDFM-F2 | 不合格 | SINGLE | 增强型MOSFET | SOURCE | N-CHANNEL | 65 V | METAL-OXIDE SEMICONDUCTOR | 超高频段 | 射频MOSFET晶体管 |