类别是'存储器 - 模块'
存储器 - 模块 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 表面安装 | 终端数量 | Date Of Intro | JESD-609代码 | 无铅代码 | ECCN 代码 | 类型 | 端子表面处理 | 附加功能 | HTS代码 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 引脚数量 | JESD-30代码 | 资历状况 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 操作模式 | 电源电流-最大值 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 并行/串行 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入保护 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | 长度 | 宽度 | ||||||||||||||||||
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QH25F160S33B8 | Intel Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | INTEL CORP | SOIC | SOP, | 68 MHz | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP16,.4 | RECTANGULAR | 小概要 | 3 V | 16 | 有 | e3 | EAR99 | NOR型号 | 哑光锡 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 1.27 mm | compliant | 16 | R-PDSO-G16 | 不合格 | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.045 mA | 2MX8 | 3-STATE | 2.642 mm | 8 | 0.00007 A | 16777216 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 10.338 mm | 7.52 mm | |||||||||||||||||||||
S29AL004D70BAI022 | Cypress Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | CYPRESS SEMICONDUCTOR CORP | FBGA-48 | 70 ns | 3 | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 3 V | 48 | 无 | e0 | EAR99 | NOR型号 | 锡铅 | ALSO CONFIGURABLE AS 512K X 8; BOTTOM BOOT BLOCK | 8542.32.00.51 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | R-PBGA-B48 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 256KX16 | 1 mm | 16 | 4194304 bit | PARALLEL | FLASH | 3 V | 8 | BOTTOM | 8.15 mm | 6.15 mm | ||||||||||||||||||||||||||
S29AL004D70BAI022 | AMD | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | ADVANCED MICRO DEVICES INC | 70 ns | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | FBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | 48 | 无 | e0 | EAR99 | NOR型号 | Tin/Lead (Sn/Pb) | 8542.32.00.51 | BOTTOM | BALL | 0.8 mm | unknown | R-PBGA-B48 | 不合格 | INDUSTRIAL | 0.035 mA | 256KX16 | 16 | 0.000005 A | 4194304 bit | PARALLEL | FLASH | 1000000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | YES | BOTTOM | ||||||||||||||||||||||||||||
S29AL004D70BAI022 | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SPANSION INC | BGA | 8.15 X 6.15 MM, FBGA-48 | 70 ns | 3 | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 3 V | 48 | 无 | e0 | 无 | EAR99 | NOR型号 | 锡铅 | ALSO CONFIGURABLE AS 512K X 8; BOTTOM BOOT BLOCK | 8542.32.00.51 | BOTTOM | BALL | 260 | 1 | 0.8 mm | not_compliant | 48 | R-PBGA-B48 | 不合格 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.035 mA | 256KX16 | 1 mm | 16 | 0.000005 A | 4194304 bit | PARALLEL | FLASH | 3 V | 1000000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | YES | BOTTOM | 8.15 mm | 6.15 mm | ||||||||||||
MX29LA321DHXCI-70G | Macronix International Co Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | MACRONIX INTERNATIONAL CO LTD | BGA | TBGA, BGA64,8X8,40 | 70 ns | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | BGA64,8X8,40 | RECTANGULAR | 网格排列 | 3 V | 64 | 有 | EAR99 | NOR型号 | 8542.32.00.51 | BOTTOM | BALL | 未说明 | 1 | 1 mm | unknown | 未说明 | 64 | R-PBGA-B64 | 不合格 | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.03 mA | 2MX16 | 1.2 mm | 16 | 0.000015 A | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 64 | 64K | YES | YES | 13 mm | 10 mm | |||||||||||||||||
M29F100T-90M1 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | STMICROELECTRONICS | SOIC | 0.525 INCH, PLASTIC, SO-44 | 90 ns | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | SOP | SOP44,.63 | RECTANGULAR | 小概要 | 5 V | 44 | 无 | e0 | EAR99 | NOR型号 | 锡铅 | CONFG AS 64K X 16; TOP BOOT BLOCK | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 1.27 mm | not_compliant | 44 | R-PDSO-G44 | 不合格 | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 64KX16 | 3-STATE | 2.62 mm | 16 | 0.0001 A | 1048576 bit | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1,1 | 16K,8K,32K,64K | YES | TOP | 28.2 mm | 13.3 mm | ||||||||||||||||
SST39VF3201-90-4C-EKE | Microchip Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 不推荐 | MICROCHIP TECHNOLOGY INC | TSOP1 | 12 X 20 MM, ROHS COMPLIANT, MO-142DD, TSOP1-48 | 90 ns | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 3 V | 48 | 有 | e3 | 有 | EAR99 | NOR型号 | Matte Tin (Sn) | 底部启动区块 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | 不合格 | 3.6 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.035 mA | 2MX16 | 1.2 mm | 16 | 0.00002 A | 33554432 bit | PARALLEL | FLASH | 2.7 V | YES | YES | YES | 1K | 2K | BOTTOM | YES | 18.4 mm | 12 mm | |||||||||||||||||
SST39VF3201-90-4C-EKE | Silicon Storage Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | SILICON STORAGE TECHNOLOGY INC | TSOP1 | 12 X 20 MM, ROHS COMPLIANT, MO-142DD, TSOP1-48 | 90 ns | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 3 V | 48 | 有 | e3 | EAR99 | NOR型号 | 哑光锡 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | 不合格 | 3.6 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.035 mA | 2MX16 | 1.2 mm | 16 | 0.00002 A | 33554432 bit | PARALLEL | FLASH | 2.7 V | YES | YES | YES | 1K | 2K | BOTTOM | YES | 18.4 mm | 12 mm | |||||||||||||||||||
AM29F010-55JE | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SPANSION INC | QFJ | PLASTIC, LCC-32 | 55 ns | 3 | 131072 words | 128000 | 125 °C | -55 °C | PLASTIC/EPOXY | QCCJ | TSSOP32,.8,20 | RECTANGULAR | CHIP CARRIER | 5 V | 32 | 无 | e0 | 3A001.A.2.C | NOR型号 | 锡铅 | 8542.32.00.51 | QUAD | J BEND | 260 | 1 | 1.27 mm | not_compliant | 32 | R-PQCC-J32 | 不合格 | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.05 mA | 128KX8 | 3.556 mm | 8 | 0.0001 A | 1048576 bit | PARALLEL | FLASH | 5 V | 1000000 Write/Erase Cycles | YES | YES | YES | 8 | 16K | 13.97 mm | 11.43 mm | |||||||||||||||||
AM29F010-55JE | Cypress Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 活跃 | CYPRESS SEMICONDUCTOR CORP | 55 ns | 131072 words | 128000 | 125 °C | -55 °C | PLASTIC/EPOXY | TSSOP | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 5 V | 32 | 无 | NOR型号 | DUAL | 鸥翼 | 0.5 mm | compliant | R-PDSO-G32 | 不合格 | 5 V | MILITARY | 0.05 mA | 128KX8 | 8 | 0.0001 A | 1048576 bit | PARALLEL | FLASH | 1000000 Write/Erase Cycles | YES | YES | YES | 8 | 16K | |||||||||||||||||||||||||||||||||
EN29GL064AT-70BIP | Eon Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | EON SILICON SOLUTION INC | LFBGA, | 70 ns | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 3 V | 48 | Transferred | EAR99 | 8542.32.00.51 | BOTTOM | BALL | 1 | 0.8 mm | unknown | R-PBGA-B48 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 4MX16 | 1.3 mm | 16 | 67108864 bit | PARALLEL | FLASH | 3 V | 8 | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||
EN29GL064AT-70BIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | LFBGA, | 70 ns | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 3 V | 48 | 接触制造商 | EAR99 | 8542.32.00.51 | BOTTOM | BALL | 1 | 0.8 mm | unknown | R-PBGA-B48 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 4MX16 | 1.3 mm | 16 | 67108864 bit | PARALLEL | FLASH | 3 V | 8 | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||
W25N01GWSFIG | Winbond Electronics Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 活跃 | WINBOND ELECTRONICS CORP | SOP, | 104 MHz | 128057344 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP8,.3 | RECTANGULAR | 小概要 | 1.8 V | 16 | 2017-11-27 | 有 | EAR99 | SLC NAND类型 | 8542.32.00.51 | DUAL | 鸥翼 | 未说明 | 1 | 1.27 mm | compliant | 未说明 | R-PDSO-G16 | 1.95 V | INDUSTRIAL | 1.7 V | SYNCHRONOUS | 128MX8 | 3-STATE | 2.64 mm | 8 | 1024458752 bit | SERIAL | FLASH | 1.8 V | QSPI | 10.31 mm | 7.49 mm | |||||||||||||||||||||||||||
AM29F200BB-55SF | AMD | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | ADVANCED MICRO DEVICES INC | 55 ns | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP44,.63 | RECTANGULAR | 小概要 | 5 V | 44 | 有 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 1.27 mm | unknown | R-PDSO-G44 | 不合格 | INDUSTRIAL | 0.06 mA | 128KX16 | 16 | 0.000005 A | 2097152 bit | PARALLEL | FLASH | 1000000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,3 | 16K,8K,32K,64K | YES | BOTTOM | |||||||||||||||||||||||||||||
S29PL127J70BAW02 | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | SPANSION INC | BGA | VFBGA, BGA64,10X12,32 | 70 ns | 3 | 8388608 words | 8000000 | 85 °C | -25 °C | PLASTIC/EPOXY | VFBGA | BGA64,10X12,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 3 V | 80 | 有 | e1 | 有 | EAR99 | NOR型号 | 锡银铜 | 上下靴块 | 8542.32.00.51 | BOTTOM | BALL | 1 | 0.8 mm | compliant | 80 | R-PBGA-B80 | 不合格 | 3.6 V | OTHER | 2.7 V | SYNCHRONOUS | 0.07 mA | 8MX16 | 1 mm | 16 | 0.000005 A | 134217728 bit | PARALLEL | FLASH | 3 V | YES | YES | YES | 16,254 | 4K,32K | 8 words | YES | BOTTOM/TOP | YES | 11 mm | 8 mm | |||||||||||||
PF48F4000P0ZTQE | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | NUMONYX | BGA | 8 X 11 MM, 1 MM HEIGHT, LEAD FREE, SCSP-88 | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | BGA88,8X12,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 88 | 有 | EAR99 | NOR型号 | 异步读取模式 | 8542.32.00.51 | BOTTOM | BALL | 1 | 0.8 mm | unknown | 88 | R-PBGA-B88 | 不合格 | 2 V | INDUSTRIAL | 1.7 V | SYNCHRONOUS | 0.031 mA | 32MX16 | 1 mm | 16 | 0.00021 A | 536870912 bit | PARALLEL | FLASH | 1.8 V | 16 | NO | NO | YES | 4,255 | 16K,64K | TOP | YES | 11 mm | 8 mm | ||||||||||||||||||||
PF48F4000P0ZTQE | Micron Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | MICRON TECHNOLOGY INC | BGA | SCSP-88 | 100 ns | 52 MHz | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | BGA88,8X12,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 1.8 V | 88 | 有 | 有 | EAR99 | NOR型号 | 异步读取模式 | 8542.32.00.51 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 30 | 88 | R-PBGA-B88 | 不合格 | 2 V | INDUSTRIAL | 1.7 V | SYNCHRONOUS | 0.031 mA | 16MX16 | 1 mm | 16 | 0.00021 A | 268435456 bit | PARALLEL | FLASH | 1.8 V | 16 | NO | NO | YES | 4,255 | 16K,64K | TOP | YES | 11 mm | 8 mm | ||||||||||||||
SDINBDG4-8G-XAT | Western Digital Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MX26LV800BXBC-55 | Macronix International Co Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | MACRONIX INTERNATIONAL CO LTD | BGA | TFBGA, BGA48,6X8,32 | 55 ns | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | TFBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 3.3 V | 48 | 无 | e0 | EAR99 | NOR型号 | 锡铅 | 8542.32.00.51 | BOTTOM | BALL | 1 | 0.8 mm | unknown | 48 | R-PBGA-B48 | 不合格 | 3.6 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.03 mA | 512KX16 | 1.2 mm | 16 | 0.0001 A | 8388608 bit | PARALLEL | FLASH | 3 V | 2000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | BOTTOM | 8 mm | 6 mm | |||||||||||||||||
S29GL064M90BAIR00 | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SPANSION INC | BGA | 12 X 11 MM, FBGA-63 | 90 ns | 3 | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA63,8X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 3.3 V | 63 | 无 | e0 | EAR99 | NOR型号 | 锡铅 | 8542.32.00.51 | BOTTOM | BALL | 260 | 1 | 0.8 mm | not_compliant | 63 | R-PBGA-B63 | 不合格 | 3.6 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.06 mA | 8MX8 | 1.2 mm | 8 | 0.000005 A | 67108864 bit | PARALLEL | FLASH | 3 V | YES | YES | YES | 128 | 64K | 8 words | YES | BOTTOM/TOP | YES | 12 mm | 11 mm | ||||||||||||||
S29GL256P11FFIR20 | Cypress Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | CYPRESS SEMICONDUCTOR CORP | LBGA, | 110 ns | 3 | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | 3.3 V | 64 | 有 | e1 | EAR99 | NOR型号 | 锡银铜 | 8542.32.00.51 | BOTTOM | BALL | 1 | 1 mm | compliant | R-PBGA-B64 | 不合格 | 3.6 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.11 mA | 16MX16 | 3-STATE | 1.4 mm | 16 | 268435456 bit | PARALLEL | FLASH | 3 V | BOTTOM/TOP | 13 mm | 11 mm | ||||||||||||||||||||||||||
PF48F2000P0ZTQ0 | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | NUMONYX | BGA | TFBGA, BGA88,8X12,32 | 88 ns | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA88,8X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 88 | 有 | EAR99 | NOR型号 | 可进行同步突发模式操作 | 8542.32.00.51 | BOTTOM | BALL | 未说明 | 1 | 0.8 mm | unknown | 未说明 | 88 | R-PBGA-B88 | 不合格 | 2 V | INDUSTRIAL | 1.7 V | ASYNCHRONOUS | 0.028 mA | 4MX16 | 1.2 mm | 16 | 0.000035 A | 67108864 bit | PARALLEL | FLASH | 1.8 V | NO | NO | YES | 4,63 | 16K,64K | 4 words | TOP | YES | 10 mm | 8 mm | ||||||||||||||||
PF48F2000P0ZTQ0 | Intel Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | INTEL CORP | BGA | 8 X 10 MM, 1.20 MM HEIGHT, LEAD FREE, SCSP-88 | 85 ns | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA88,8X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 88 | 有 | EAR99 | NOR型号 | 可进行同步突发模式操作 | 8542.32.00.51 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 40 | 88 | R-PBGA-B88 | 不合格 | 2 V | INDUSTRIAL | 1.7 V | ASYNCHRONOUS | 0.051 mA | 4MX16 | 1.2 mm | 16 | 0.000005 A | 67108864 bit | PARALLEL | FLASH | 1.8 V | NO | NO | YES | 4,63 | 16K,64K | 4 words | TOP | YES | 10 mm | 8 mm | ||||||||||||||||
CY7C251-55LMB | Cypress Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | CYPRESS SEMICONDUCTOR CORP | QFJ | LCC-32 | 55 ns | 16384 words | 16000 | 125 °C | -55 °C | UNSPECIFIED | QCCN | LCC28,.45SQ | RECTANGULAR | CHIP CARRIER | 5 V | 32 | 无 | e0 | EAR99 | 锡铅 | 电源开关 | 8542.32.00.71 | QUAD | 无铅 | 1 | 1.27 mm | not_compliant | 32 | R-XQCC-N32 | 不合格 | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.12 mA | 16KX8 | 3-STATE | 2.286 mm | 8 | 0.035 A | 131072 bit | MIL-STD-883 | PARALLEL | OTP ROM | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||
EN27SN1G08-45CEIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | VFBGA, | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 1.8 V | 63 | 接触制造商 | EAR99 | 8542.32.00.51 | BOTTOM | BALL | 1 | 0.8 mm | unknown | R-PBGA-B63 | 1.95 V | INDUSTRIAL | 1.7 V | ASYNCHRONOUS | 128MX8 | 1 mm | 8 | 1073741824 bit | PARALLEL | FLASH | 1.8 V | 11 mm | 9 mm |