类别是'存储器连接器 - 配件'
存储器连接器 - 配件 (752)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 厂商 | 操作温度 | 包装 | 系列 | JESD-609代码 | 无铅代码 | ECCN 代码 | 连接器类型 | 类型 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 行数 | 性别 | 附加功能 | HTS代码 | 子类别 | MIL一致性 | 符合 DIN 标准 | IEC一致性 | 选项 | 螺距 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 额定电流 | 引脚数量 | 终端样式 | JESD-30代码 | 资历状况 | 接头数量 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 磁卡种类 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | uPs/uCs/外围ICs类型 | 触点表面处理 终端 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 产品类别 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 边界扫描 | 低功率模式 | 筛选水平 | I/O类型 | 外部数据总线宽度 | 内存IC类型 | 总线兼容性 | 刷新周期 | 顺序突发长度 | 交错突发长度 | 访问模式 | 产品 | 自我刷新 | 产品类别 | 库存数量 | 组织的记忆 | 产品长度(mm) | 长度 | 宽度 | 产品高度(mm) | |||||||||||||||||||||||||||||||||||||||||||||||
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![]() | IS46LD32640B-25BPLA1 | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 活跃 | INTEGRATED SILICON SOLUTION INC | VFBGA, | 5.64 | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 1.2 V | YES | 168 | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | BOTTOM | BALL | 1 | 0.5 mm | compliant | S-PBGA-B168 | IS46LD32640B-25BPLA1 | 1.3 V | INDUSTRIAL | 1.14 V | 1 | SYNCHRONOUS | 64MX32 | 0.95 mm | 32 | 2147483648 bit | DDR DRAM | 多库页面突发 | YES | 12 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS46LD32128A-25BPLA2 | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 活跃 | INTEGRATED SILICON SOLUTION INC | VFBGA, | 5.65 | 134217728 words | 128000000 | PLASTIC/EPOXY | VFBGA | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 1.2 V | 未说明 | Tray | IS46LD32128 | Obsolete | Volatile | 表面贴装 | 168-VFBGA | YES | 168-VFBGA (12x12) | 168 | ISSI, Integrated Silicon Solution Inc | -40°C ~ 105°C (TC) | Automotive, AEC-Q100 | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 1.14V ~ 1.3V, 1.7V ~ 1.95V | BOTTOM | BALL | 未说明 | 1 | 0.5 mm | compliant | S-PBGA-B168 | IS46LD32128A-25BPLA2 | 1.3 V | 1.14 V | 4Gbit | 1 | SYNCHRONOUS | 400 MHz | 5.5 ns | DRAM | HSUL_12 | 128MX32 | 0.95 mm | 32 | 15ns | 4294967296 bit | DDR DRAM | 多库页面突发 | YES | 128M x 32 | 12 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS46DR16160A-5BBLA1 | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | BGA | TFBGA, BGA84,9X15,32 | 5.71 | 0.6 ns | 200 MHz | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 40 | Automotive grade | YES | 84 | e1 | 有 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 84 | R-PBGA-B84 | 不合格 | IS46DR16160A-5BBLA1 | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.21 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.005 A | 268435456 bit | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 四库页面突发 | YES | 12.5 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS45SM16160K-6BLA1 | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 有 | 活跃 | INTEGRATED SILICON SOLUTION INC | TFBGA, | 5.67 | 5.5 ns | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | 3.3 V | 未说明 | YES | 54 | EAR99 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | BOTTOM | BALL | 未说明 | 1 | 0.8 mm | compliant | S-PBGA-B54 | IS45SM16160K-6BLA1 | 3.6 V | INDUSTRIAL | 2.7 V | 1 | SYNCHRONOUS | 16MX16 | 1.2 mm | 16 | 268435456 bit | 同步剧 | 四库页面突发 | YES | 8 mm | 8 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS43R32800B-6BLI | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | BGA | LFBGA, | 5.68 | 0.7 ns | 3 | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFBGA | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | 2.5 V | 10 | YES | 144 | e1 | 有 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 144 | S-PBGA-B144 | 不合格 | IS43R32800B-6BLI | 2.7 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 8MX32 | 1.4 mm | 32 | 268435456 bit | DDR DRAM | 四库页面突发 | YES | 12 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS42S16800D-6TLI | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | TSOP2 | TSOP2, TSOP54,.46,32 | 5.61 | 5.4 ns | 166 MHz | 3 | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 3.3 V | 10 | Compliant | 表面贴装 | YES | 54 | 54 | e3 | EAR99 | Matte Tin (Sn) - annealed | 85 °C | -40 °C | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | 鸥翼 | 260 | 1 | 0.8 mm | compliant | 54 | R-PDSO-G54 | 不合格 | IS42S16800D-6TLI | 3.3 V | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | 3.6 V | 3 V | 16 MB | 1 | 180 mA | SYNCHRONOUS | 0.18 mA | 5.4 ns | 16 b | 8MX16 | 3-STATE | 1.2 mm | 16 | 14 b | 128 Mb | 0.001 A | 134217728 bit | 166 MHz | COMMON | 同步剧 | 4096 | 1,2,4,8,FP | 1,2,4,8 | 四库页面突发 | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS43DR83200A-3DBLI | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | BGA | TFBGA, BGA60,9X11,32 | 5.84 | 0.45 ns | 333 MHz | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 40 | Compliant | 表面贴装 | YES | 60 | 60 | e1 | 有 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85 °C | -40 °C | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 60 | R-PBGA-B60 | 不合格 | IS43DR83200A-3DBLI | 1.8 V | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.9 V | 1.7 V | 32 MB | 1 | 330 mA | SYNCHRONOUS | 135 mA | 0.33 mA | 3 ns | 8 b | 32MX8 | 3-STATE | 1.2 mm | 8 | 15 b | 256 Mb | 0.005 A | 268435456 bit | 333 MHz | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 四库页面突发 | YES | 10.5 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS43R16160B-6BL | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | BGA | TBGA, BGA60,9X12,40/32 | 5.63 | 0.7 ns | 166 MHz | 16777216 words | 16000000 | 70 °C | PLASTIC/EPOXY | TBGA | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | 2.5 V | 40 | Compliant | YES | 60 | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 70 °C | 0 °C | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 60 | R-PBGA-B60 | 不合格 | IS43R16160B-6BL | 2.7 V | 2.5 V | COMMERCIAL | 2.3 V | 2.7 V | 2.3 V | 32 MB | 1 | SYNCHRONOUS | 0.25 mA | 700 ps | 16 b | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.025 A | 268435456 bit | 166 MHz | COMMON | DDR DRAM | 8192 | 2,4,8 | 2,4,8 | 四库页面突发 | YES | 13 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS41C16100C-50KI | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks, 6 Days | 无 | 不推荐 | INTEGRATED SILICON SOLUTION INC | SOJ | SOJ, | 5.55 | 50 ns | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOJ | RECTANGULAR | 小概要 | 5 V | YES | 42 | EAR99 | CAS BEFORE RAS/SELF REFRESH/AUTO REFRESH | 8542.32.00.02 | DUAL | J BEND | 1 | 1.27 mm | compliant | 42 | R-PDSO-J42 | 不合格 | IS41C16100C-50KI | 5.5 V | INDUSTRIAL | 4.5 V | 1 | SYNCHRONOUS | 1MX16 | 3.76 mm | 16 | 16777216 bit | EDO DRAM | EDO PAGE | YES | 27.305 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS43R16400B-6TL | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks, 6 Days | 有 | 活跃 | INTEGRATED SILICON SOLUTION INC | TSOP2 | TSOP2, TSSOP66,.46 | 5.43 | 0.7 ns | 166 MHz | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 2.5 V | YES | 66 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | 鸥翼 | 1 | 0.65 mm | compliant | 66 | R-PDSO-G66 | 不合格 | IS43R16400B-6TL | 2.7 V | 2.5 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | 0.2 mA | 4MX16 | 3-STATE | 1.2 mm | 16 | 0.01 A | 67108864 bit | COMMON | DDR DRAM | 4096 | 2,4,8 | 2,4,8 | 四库页面突发 | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS43R16400B-5TL | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks, 6 Days | 有 | 活跃 | INTEGRATED SILICON SOLUTION INC | TSOP2 | TSOP2, TSSOP66,.46 | 5.19 | 0.7 ns | 200 MHz | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 2.5 V | YES | 66 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | 鸥翼 | 1 | 0.65 mm | compliant | 66 | R-PDSO-G66 | 不合格 | IS43R16400B-5TL | 2.7 V | 2.5 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | 0.22 mA | 4MX16 | 3-STATE | 1.2 mm | 16 | 0.01 A | 67108864 bit | COMMON | DDR DRAM | 4096 | 2,4,8 | 2,4,8 | 四库页面突发 | YES | 22.22 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | KSM26RD4/32HAI | Kingston | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | KINGSTON TECHNOLOGY COMPANY INC | DIMM, | 5.78 | 4294967296 words | 4000000000 | 85 °C | UNSPECIFIED | DIMM | RECTANGULAR | 微电子组件 | 1.2 V | 未说明 | NO | 288 | DUAL | 无铅 | 未说明 | 1 | compliant | R-XDMA-N288 | KSM26RD4/32HAI | OTHER | 1 | SYNCHRONOUS | 4GX72 | 31.37 mm | 72 | 309237645312 bit | DDR内存模块 | 多库页面突发 | 133.35 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MT43A4G40100NFA-S15:A | Micron | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | MICRON TECHNOLOGY INC | BGA, | 5.82 | 4294967296 words | 4000000000 | 105 °C | PLASTIC/EPOXY | BGA | SQUARE | 网格排列 | 1.2 V | YES | 896 | IT ALSO OPERATES AT LOGIC OPERATING TEMPERATURE 0 TO 110 DEG CENTIGRADE | 8542.32.00.71 | BOTTOM | BALL | 1 | 1 mm | compliant | S-PBGA-B896 | MT43A4G40100NFA-S15:A | 1.26 V | OTHER | 1.14 V | SYNCHRONOUS | 4GX4 | 4.2 mm | 4 | 17179869184 bit | 存储器电路 | 31 mm | 31 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MT42C4064Z-10 | Micron | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 无 | 活跃 | MICRON TECHNOLOGY INC | 2.33 | 100 ns | 65536 words | 64000 | 70 °C | CERAMIC | ZIP | ZIP24,.1 | RECTANGULAR | IN-LINE | 5 V | NO | 24 | e0 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | ZIG-ZAG | THROUGH-HOLE | 1.27 mm | unknown | R-XZIP-T24 | 不合格 | MT42C4064Z-10 | 5 V | COMMERCIAL | 0.06 mA | 64KX4 | 4 | 0.004 A | 262144 bit | 存储器电路 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MC88200RC20 | MOTOROLA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 无 | Obsolete | MOTOROLA INC | PGA, PGA180,17X17 | 8.85 | 20 MHz | 70 °C | CERAMIC, METAL-SEALED COFIRED | PGA | PGA180,17X17 | SQUARE | 网格排列 | 5.25 V | 5 V | 未说明 | 4.75 V | NO | 180 | e0 | Tin/Lead (Sn/Pb) | PERPENDICULAR | PIN/PEG | 未说明 | 2.54 mm | unknown | S-CPGA-P180 | 不合格 | MC88200RC20 | 5 V | COMMERCIAL | 内存管理单元 | 3.86 mm | 32 | 32 | MC88100 | 44.705 mm | 44.705 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NT5TU64M16HG-ACI | Nanya | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 活跃 | NANYA TECHNOLOGY CORP | TFBGA, BGA84,9X15,32 | 1.78 | 0.4 ns | 400 MHz | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 未说明 | YES | 84 | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | AUTO/SELF REFRESH | BOTTOM | BALL | 未说明 | 1 | 0.8 mm | compliant | R-PBGA-B84 | 不合格 | NT5TU64M16HG-ACI | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.2 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.009 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 多库页面突发 | YES | 12.5 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NT5CC64M16GP-EK | Nanya | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 933 MHz | 67108864 words | 64000000 | 85 °C | PLASTIC/EPOXY | VFBGA | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 5.64 | VFBGA, BGA96,9X16,32 | NANYA TECHNOLOGY CORP | 活跃 | 有 | NT5CC64M16GP-EK | 1.35 V | 未说明 | YES | 96 | e1 | EAR99 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | AUTO/SELF REFRESH | BOTTOM | BALL | 未说明 | 1 | 0.8 mm | compliant | R-PBGA-B96 | 不合格 | 0.195 ns | 1.45 V | 1.35 V | OTHER | 1.283 V | 1 | SYNCHRONOUS | 0.232 mA | 64MX16 | 3-STATE | 1 mm | 16 | 0.011 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | 多库页面突发 | YES | 13 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NS32819N-80 | National Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | NATIONAL SEMICONDUCTOR CORP | DIP, | 8.45 | 80 MHz | 70 °C | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | 5.5 V | 5 V | 4.5 V | NO | 48 | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-PDIP-T48 | 不合格 | NS32819N-80 | COMMERCIAL | MEMORY CONTROLLER, DRAM | 240 mA | 5.08 mm | 18 | NO | NO | 4 | 256K X 1 | 61.38 mm | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NS32082D-10 | National Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 无 | Obsolete | NATIONAL SEMICONDUCTOR CORP | DIP, DIP48,.6 | 8.74 | 70 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP48,.6 | RECTANGULAR | IN-LINE | 5.25 V | 5 V | 未说明 | 4.75 V | NO | 48 | e0 | Tin/Lead (Sn/Pb) | DUAL | THROUGH-HOLE | 未说明 | 2.54 mm | unknown | R-CDIP-T48 | 不合格 | NS32082D-10 | COMMERCIAL | 内存管理单元 | 5.08 mm | 24 | NO | 16 | NS32332; NS32032; NS32016 | 15.24 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NT5CB64M16GP-DII | Nanya | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 活跃 | NANYA TECHNOLOGY CORP | VFBGA, BGA96,9X16,32 | 5.64 | 0.225 ns | 800 MHz | 67108864 words | 64000000 | 85 °C | 未说明 | 1.5 V | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | RECTANGULAR | BGA96,9X16,32 | VFBGA | PLASTIC/EPOXY | -40 °C | YES | 96 | AUTO/SELF REFRESH | BOTTOM | BALL | 未说明 | 1 | 0.8 mm | compliant | R-PBGA-B96 | 不合格 | NT5CB64M16GP-DII | 1.575 V | 1.5 V | INDUSTRIAL | 1.425 V | 1 | SYNCHRONOUS | 0.212 mA | 64MX16 | 3-STATE | 1 mm | 16 | 0.011 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | 多库页面突发 | YES | 13 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | W3E32M72SR-266SBM | Microsemi | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 无 | Transferred | MICROSEMI CORP | BGA | BGA, | 5.23 | 0.75 ns | 33554432 words | 32000000 | 125 °C | -55 °C | PLASTIC/EPOXY | BGA | RECTANGULAR | 网格排列 | 2.5 V | 未说明 | YES | 208 | e0 | EAR99 | Tin/Lead (Sn/Pb) | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | 未说明 | 1 | compliant | 208 | R-PBGA-B208 | 不合格 | W3E32M72SR-266SBM | 2.7 V | MILITARY | 2.3 V | 1 | SYNCHRONOUS | 32MX72 | 72 | 2415919104 bit | DDR DRAM | 多库页面突发 | YES | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | W3E32M64S-266SBM | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 无 | Transferred | MICROSEMI CORP | BGA | BGA, | 5.22 | 0.75 ns | 33554432 words | 32000000 | 125 °C | -55 °C | PLASTIC/EPOXY | BGA | RECTANGULAR | 网格排列 | 2.5 V | 未说明 | YES | 208 | e0 | 无 | EAR99 | 锡铅 | 自动刷新 | 8542.32.00.36 | BOTTOM | BALL | 未说明 | 1 | compliant | 208 | R-PBGA-B208 | 不合格 | W3E32M64S-266SBM | 2.7 V | MILITARY | 2.3 V | 1 | SYNCHRONOUS | 32MX64 | 64 | 2147483648 bit | DDR DRAM | 四库页面突发 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | W634GU8MB15I | Winbond Electronics Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 不推荐 | WINBOND ELECTRONICS CORP | VFBGA, | 5.64 | 536870912 words | 512000000 | 95 °C | -40 °C | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 1.35 V | YES | 78 | AUTO/SELF REFRESH | BOTTOM | BALL | 1 | 0.8 mm | compliant | R-PBGA-B78 | W634GU8MB15I | 1.45 V | INDUSTRIAL | 1.283 V | 1 | SYNCHRONOUS | 512MX8 | 1 mm | 8 | 4294967296 bit | DDR DRAM | 多库页面突发 | YES | 10.5 mm | 9 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 2308107-6 | TE Connectivity | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 有 | 活跃 | TE CONNECTIVITY LTD | 1.69 | Straight | 1.2V | 2 | 6.3(mm) | -55C to 105C | Solder | 通孔 | Copper Alloy | 无 | 0.85(mm) | 0.257500 oz | 50 | TE Connectivity | Details | TE Connectivity | 存储卡连接器 | Gold Over Nickel | Tray | 卡边缘连接器 | DDR4 DIMM SOCKET | 2 Row | SKT | Memory Connectors & Sockets | 0.85 mm | compliant | 0.75/CONTACT(A) | SMD/SMT | 288(POS) | 2308107-6 | SIM | 卡连接器 | 存储卡连接器 | 146.28(mm) | 21.3(mm) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 2057184-2 | TE Connectivity | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | TE CONNECTIVITY LTD | 5.81 | 未说明 | 未说明 | 2057184 | e3 | PCB 连接器 | NO | NO | NO | GENERAL PURPOSE | compliant | 2057184-2 | Matte Tin (Sn) |