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专用 (1453)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 表面安装 | 终端数量 | JESD-609代码 | 无铅代码 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 引脚数量 | JESD-30代码 | 资历状况 | 电源电压-最大值(Vsup) | 温度等级 | 电源电压-最小值(Vsup) | 操作模式 | 电源电流-最大值 | 组织结构 | 座位高度-最大 | 内存宽度 | 待机电流-最大值 | 记忆密度 | 内存IC类型 | 混合内存类型 | 长度 | 宽度 | |||||||||||||||||
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![]() | XC17S40PDG8C | AMD Xilinx | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | XILINX INC | DIP | DIP, | 1 | 329312 words | 329312 | 70 °C | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | 5 V | 8 | 有 | e3 | 有 | EAR99 | Matte Tin (Sn) | 8542.32.00.71 | DUAL | THROUGH-HOLE | 250 | 1 | 2.54 mm | compliant | 30 | 8 | R-PDIP-T8 | 不合格 | 5.25 V | COMMERCIAL | 4.75 V | SYNCHRONOUS | 329312X1 | 4.5974 mm | 1 | 329312 bit | 存储器电路 | 9.3599 mm | 7.62 mm | ||||||||
![]() | UPD41101C-2 | NEC Electronics Group | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | UPD41101C-2 | Renesas Electronics Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | RENESAS ELECTRONICS CORP | DIP-24 | 27 ns | 70 °C | -20 °C | PLASTIC/EPOXY | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | 24 | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | DUAL | THROUGH-HOLE | 2.54 mm | unknown | R-PDIP-T24 | 不合格 | COMMERCIAL | 0.09 mA | 0.09 A | 存储器电路 | ||||||||||||||||||||||
![]() | CY7C274-55QMB | Teledyne e2v | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | E2V TECHNOLOGIES PLC | , | 活跃 | 3A001.A.2.C | 8542.32.00.61 | compliant | ||||||||||||||||||||||||||||||||||||||||||||
![]() | SST32HF324C-70-4C-LBKE | Greenliant Systems Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | GREENLIANT SYSTEMS LTD | , | Obsolete | EAR99 | 8542.32.00.71 | compliant | ||||||||||||||||||||||||||||||||||||||||||||
![]() | XC17S05PDG8C | AMD Xilinx | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | XILINX INC | DIP | DIP, | 1 | 53984 words | 53984 | 70 °C | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | 5 V | 8 | 有 | e3 | 有 | EAR99 | Matte Tin (Sn) | 8542.32.00.71 | DUAL | THROUGH-HOLE | 250 | 1 | 2.54 mm | compliant | 30 | 8 | R-PDIP-T8 | 不合格 | 5.25 V | COMMERCIAL | 4.75 V | SYNCHRONOUS | 53984X1 | 4.5974 mm | 1 | 53984 bit | 存储器电路 | 9.3599 mm | 7.62 mm | ||||||||
![]() | S71NS256NC0BJWVN3 | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SPANSION INC | BGA | 11 X 10 MM, 1.20 MM HEIGHT, LEAD FREE, VFBGA-60 | 3 | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 60 | 有 | e2 | EAR99 | TIN SILVER COPPER NICKEL | PSRAM IS ORGANIZED AS 16M X 16 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.5 mm | unknown | 40 | 60 | R-PBGA-B60 | 不合格 | 1.95 V | OTHER | 1.7 V | SYNCHRONOUS | 16MX16 | 1.2 mm | 16 | 268435456 bit | 存储器电路 | 11 mm | 10 mm | |||||||
![]() | S72NS256PD0AJBLG3 | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SPANSION INC | BGA | 8 X 8 MM, 0.50 MM PITCH, LEAD FREE, FBGA-133 | 3 | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 133 | 有 | e2 | EAR99 | TIN SILVER COPPER NICKEL | DRAM IS ORGANISED AS 16M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.5 mm | unknown | 40 | 133 | S-PBGA-B133 | 不合格 | 1.95 V | OTHER | 1.7 V | ASYNCHRONOUS | 16MX16 | 1.1 mm | 16 | 268435456 bit | 存储器电路 | 8 mm | 8 mm | |||||||
![]() | PF38F5060M0Y0B0 | Intel Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | INTEL CORP | BGA | TFBGA, BGA105,9X12,32 | 3 | 33554432 words | 32000000 | 85 °C | -30 °C | PLASTIC/EPOXY | TFBGA | BGA105,9X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 105 | 有 | e1 | EAR99 | 锡银铜 | PSEUDO SRAM IS ORGANIZED AS 8M X 16 | 8542.32.00.71 | BOTTOM | BALL | 1 | 0.8 mm | compliant | 105 | R-PBGA-B105 | 不合格 | 2 V | OTHER | 1.7 V | SYNCHRONOUS | 32MX16 | 1.2 mm | 16 | 0.00012 A | 536870912 bit | 存储器电路 | FLASH+PSRAM | 11 mm | 9 mm | ||||||
![]() | TH50VSF2580AASB | Toshiba America Electronic Components | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | TOSHIBA CORP | BGA | LFBGA, BGA69,10X12,32 | 90 ns | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFBGA | BGA69,10X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 3 V | 69 | 无 | e0 | 无 | EAR99 | 锡铅 | USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 256 X 16 OR 512K X 8 | 8542.32.00.71 | BOTTOM | BALL | 1 | 0.8 mm | unknown | 69 | R-PBGA-B69 | 不合格 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.05 mA | 2MX16 | 1.4 mm | 16 | 33554432 bit | 存储器电路 | FLASH+SRAM | 12 mm | 9 mm | |||||
![]() | HYG0UGG0MF1P-5SH0E | SK Hynix Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | SK HYNIX INC | FBGA-149 | 33554432 words | 32000000 | 85 °C | -30 °C | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 1.8 V | 149 | 活跃 | EAR99 | IT ALSO CONTAINS 1GBIT(128M X 8BIT) NAND FLASH MEMORY OPERATES AT 2.7V NOM SUPPLY | 8542.32.00.71 | BOTTOM | BALL | 1 | 0.8 mm | compliant | R-PBGA-B149 | 1.95 V | OTHER | 1.7 V | SYNCHRONOUS | 32MX16 | 1.4 mm | 16 | 536870912 bit | 存储器电路 | 14 mm | 10 mm | ||||||||||||||||
![]() | ICS2121M001 | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INTEGRATED CIRCUIT SYSTEMS INC | , | 无 | EAR99 | 8542.32.00.71 | unknown | |||||||||||||||||||||||||||||||||||||||||||
![]() | S71PL127JB0BAW9Z | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SPANSION INC | BGA | TFBGA, | 3 | 8388608 words | 8000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 3 V | 64 | 无 | e0 | EAR99 | 锡铅 | PSEUDO STATIC RAM IS ORGANIZED AS 2M X 16 | 8542.32.00.71 | BOTTOM | BALL | 1 | 0.8 mm | compliant | 64 | R-PBGA-B64 | 不合格 | 3.6 V | OTHER | 2.7 V | ASYNCHRONOUS | 8MX16 | 1.2 mm | 16 | 134217728 bit | 存储器电路 | 11.6 mm | 8 mm | |||||||||
![]() | SST34HF1641C-70-4C-L1P | Silicon Storage Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | SILICON STORAGE TECHNOLOGY INC | BGA | LFBGA, | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 3 V | 56 | Obsolete | EAR99 | SRAM IS ORGANIZED AS 256K X 16 / 512K X 8; FLASH CAN ALSO BE ORGANIZED AS 2M X 8 | 8542.32.00.71 | BOTTOM | BALL | 1 | 0.8 mm | unknown | 56 | R-PBGA-B56 | 不合格 | 3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 1MX16 | 1.4 mm | 16 | 16777216 bit | 存储器电路 | 10 mm | 8 mm | ||||||||||||||
![]() | AM27C2048-150PC | Cypress Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | CYPRESS SEMICONDUCTOR CORP | 活跃 | compliant | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | TMS4C1060-30SD | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | TEXAS INSTRUMENTS INC | ZIP, ZIP20,.1 | 25 ns | 70 °C | PLASTIC/EPOXY | ZIP | ZIP20,.1 | RECTANGULAR | IN-LINE | 5 V | 20 | 无 | EAR99 | 8542.32.00.71 | ZIG-ZAG | THROUGH-HOLE | 未说明 | 1.27 mm | not_compliant | 未说明 | R-PZIP-T20 | 不合格 | COMMERCIAL | 0.05 mA | 0.01 A | 存储器电路 | ||||||||||||||||||||||
![]() | SN74LS189N | Motorola Mobility LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | MOTOROLA INC | DIP | DIP, | 16 words | 16 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | 5 V | 16 | Obsolete | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | DUAL | THROUGH-HOLE | 1 | unknown | 16 | R-PDIP-T16 | 不合格 | ASYNCHRONOUS | 16X4 | 4 | 64 bit | 存储器电路 | |||||||||||||||||||||
![]() | RD28F3208C3T70 | Intel Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | INTEL CORP | BGA | LFBGA, BGA68,8X12,32 | 70 ns | 2097152 words | 2000000 | 85 °C | -25 °C | PLASTIC/EPOXY | LFBGA | BGA68,8X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 3 V | 66 | 无 | EAR99 | SRAM IS ORGANIZED AS 512K X 16 | 8542.32.00.71 | BOTTOM | BALL | 240 | 1 | 0.8 mm | compliant | 30 | 66 | R-PBGA-B66 | 不合格 | 3.3 V | 商业扩展 | 2.7 V | ASYNCHRONOUS | 0.055 mA | 2MX16 | 1.4 mm | 16 | 0.000006 A | 33554432 bit | 存储器电路 | FLASH+SRAM | 10 mm | 8 mm | |||||
![]() | S71GL128NB0BFW9Z0 | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SPANSION INC | BGA | 8 X 11.60 MM, 1.20 MM HIEGHT, LEAD FREE, FBGA-64 | 3 | 8388608 words | 8000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 3 V | 64 | 有 | e1 | 3A991.B.1.A | 锡银铜 | PSRAM IS ORGANIZED AS 2M X 16 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 40 | 64 | R-PBGA-B64 | 不合格 | 3.1 V | OTHER | 2.7 V | ASYNCHRONOUS | 8MX16 | 1.2 mm | 16 | 134217728 bit | 存储器电路 | 11.6 mm | 8 mm | |||||||
![]() | LRS1806K | Sharp Microelectronics of the Americas | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | R8A66120FFA | Renesas Electronics Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | RENESAS ELECTRONICS CORP | QFP | LFQFP, QFP48,.35SQ,20 | 6 ns | 2097152 words | 2000000 | 70 °C | PLASTIC/EPOXY | LFQFP | QFP48,.35SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | 3.3 V | 48 | Obsolete | EAR99 | 8542.32.00.71 | QUAD | 鸥翼 | 1 | 0.5 mm | unknown | 48 | S-PQFP-G48 | 不合格 | 3.6 V | COMMERCIAL | 3 V | SYNCHRONOUS | 0.15 mA | 2MX4 | 1.7 mm | 4 | 8388608 bit | 存储器电路 | 7 mm | 7 mm | ||||||||||||
![]() | XC17S20VOG8I | AMD Xilinx | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | XILINX INC | TSOP | TSOP2, | 3 | 178144 words | 178144 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 5 V | 8 | 有 | e3 | 有 | EAR99 | Matte Tin (Sn) | 8542.32.00.71 | DUAL | 鸥翼 | 260 | 1 | 1.27 mm | compliant | 30 | 8 | R-PDSO-G8 | 不合格 | 5.5 V | INDUSTRIAL | 4.5 V | SYNCHRONOUS | 178144X1 | 1.2 mm | 1 | 178144 bit | 存储器电路 | 4.9 mm | 3.9 mm | |||||||
![]() | MD2201-D72 | M-Systems Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | TH50VSF1421ACXB | Toshiba America Electronic Components | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | TOSHIBA CORP | BGA, BGA48,6X8,40 | 100 ns | 85 °C | -20 °C | PLASTIC/EPOXY | BGA | BGA48,6X8,40 | RECTANGULAR | 网格排列 | 48 | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | BOTTOM | BALL | 1 mm | unknown | R-PBGA-B48 | 不合格 | OTHER | 0.04 mA | 0.00003 A | 存储器电路 | FLASH+SRAM | |||||||||||||||||||||
![]() | SST34HF1642C-70-4E-L1PE | Silicon Storage Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | SILICON STORAGE TECHNOLOGY INC | BGA | LFBGA, | 1048576 words | 1000000 | 85 °C | -20 °C | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 3 V | 56 | Obsolete | EAR99 | SRAM IS ORGANIZED AS 256K X 16 / 512K X 8; FLASH CAN ALSO BE ORGANIZED AS 2M X 8 | 8542.32.00.71 | BOTTOM | BALL | 1 | 0.8 mm | unknown | 56 | R-PBGA-B56 | 不合格 | 3.3 V | OTHER | 2.7 V | ASYNCHRONOUS | 1MX16 | 1.4 mm | 16 | 16777216 bit | 存储器电路 | 10 mm | 8 mm |