类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 工作电源电流 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 输出启用 | 页面尺寸 | 刷新周期 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 访问模式 | 反向引脚排列 | 自我刷新 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||||||||
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CY7C131-55JXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 52-LCC (J-Lead) | 52 | Volatile | 0°C~70°C TA | Tube | 1998 | e3 | Obsolete | 3 (168 Hours) | 52 | EAR99 | Matte Tin (Sn) | 中断标志 | 4.5V~5.5V | QUAD | 260 | 1 | 5V | 55GHz | 20 | CY7C131 | 52 | 5V | 5V | 8Kb 1K x 8 | 2 | 110mA | SRAM | Parallel | 1KX8 | 3-STATE | 55ns | 20b | 8 kb | 0.015A | 55 ns | COMMON | Asynchronous | 8b | 3.68mm | 19.2mm | 19.2mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS66WVE4M16EBLL-55BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 48-TFBGA | YES | Volatile | -40°C~85°C TA | Tray | e1 | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.7V~3.6V | BOTTOM | 未说明 | 1 | 0.75mm | 未说明 | R-PBGA-B48 | 3.6V | 2.7V | 64Mb 4M x 16 | 1 | ASYNCHRONOUS | PSRAM | Parallel | 4MX16 | 3-STATE | 16 | 55ns | 0.00015A | 67108864 bit | 55 ns | COMMON | 2.7V | NO | NO | 1.2mm | 8mm | 6mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MT47H64M8B6-25E:D | Micron | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 网格排列 | 64000000 | PLASTIC/EPOXY | BGA60,9X11,32 | 30 | 0.4 ns | 85 °C | 有 | MT47H64M8B6-25E:D | 400 MHz | 67108864 words | 1.8 V | TFBGA | SQUARE | Micron Technology Inc | Obsolete | MICRON TECHNOLOGY INC | 5.59 | BGA | YES | 60 | TFBGA, BGA60,9X11,32 | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.28 | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | not_compliant | 60 | S-PBGA-B60 | 不合格 | 1.9 V | 1.8 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | 0.3 mA | 64MX8 | 3-STATE | 1.2 mm | 8 | 0.007 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 四库页面突发 | YES | 10 mm | 10 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
M24256-BFMB6TG | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e3 | Obsolete | 1 (Unlimited) | 8 | 哑光锡 | 1.7V~5.5V | DUAL | 225 | 0.5mm | M24256 | 2-Wire, I2C, Serial | 256Kb 32K x 8 | 2mA | 1MHz | 450ns | EEPROM | I2C | 8 | 5ms | 256 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 40 | HARDWARE | 1010DDDR | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS42S16160J-6TL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Commercial grade | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | YES | Volatile | 0°C~70°C TA | Tube | 活跃 | 3 (168 Hours) | 54 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 3V~3.6V | DUAL | 未说明 | 1 | 3.3V | 0.8mm | 未说明 | R-PDSO-G54 | 3.3V | 3.6V | 3V | 256Mb 16M x 16 | 1 | SYNCHRONOUS | 166MHz | 5.4ns | DRAM | Parallel | 16MX16 | 16 | 13b | 256 Mb | 1.2mm | 22.22mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C13451G-100BZXE | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 165-LBGA | YES | 165 | Volatile | -40°C~125°C TA | Tray | 2002 | 活跃 | 3 (168 Hours) | 165 | 3A991.B.2.B | 8542.32.00.41 | 3.135V~3.6V | BOTTOM | 未说明 | 1 | 3.3V | 1mm | 未说明 | 3.6V | 3.135V | 4Mb 128K x 36 | 100MHz | 8ns | SRAM | Parallel | 128KX36 | 36 | 4718592 bit | 1.4mm | 15mm | 13mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
93C86CT-E/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2012 | e4 | 活跃 | 1 (Unlimited) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 5V | 0.5mm | 93C86C | 不合格 | 5V | 5V | Serial | 16Kb 2K x 8 1K x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 1KX16 | 16 | 2ms | 16 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 200 | HARDWARE/SOFTWARE | 8 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
93C66BT-E/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2011 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 93C66B | 8 | 5V | Serial | 4Kb 256 x 16 | 2mA | SYNCHRONOUS | 2MHz | 250 ns | EEPROM | SPI | 256X16 | 16 | 2ms | 4 kb | MICROWIRE | 2ms | 3mm | 2mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
93LC66AT-E/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2011 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 93LC66A | 8 | 5.5V | 2.5V | Serial | 4Kb 512 x 8 | 2mA | SYNCHRONOUS | 2MHz | 250 ns | EEPROM | SPI | 8 | 6ms | 4 kb | MICROWIRE | 6ms | 3mm | 2mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C09269V-7AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 1997 | e4 | yes | Obsolete | 3 (168 Hours) | 100 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3V~3.6V | QUAD | 260 | 1 | 3.3V | 0.5mm | 20 | CY7C09269 | 100 | 3.3V | 3.6V | 3V | 256Kb 16K x 16 | 2 | 275mA | 83MHz | 7.5ns | SRAM | Parallel | 16KX16 | 3-STATE | 16 | 14b | 256 kb | COMMON | Synchronous | 16b | 3V | 1.6mm | 14mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1312CV18-250BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | Obsolete | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | unknown | 40 | CY7C1312 | 165 | 不合格 | 1.8V | 1.9V | 1.7V | 18Mb 1M x 18 | 2 | 800mA | 250MHz | 450 ps | SRAM | Parallel | 1MX18 | 3-STATE | 18 | 19b | 18 Mb | 0.4A | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1613KV18-300BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 40 | CY7C1613 | 165 | 1.8V | 1.9V | 1.7V | 144Mb 8M x 18 | 2 | 710mA | 300MHz | 450 ps | SRAM | Parallel | 8MX18 | 3-STATE | 18 | 21b | 144 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 17mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
EDW4032BABG-70-F-D | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 170-TFBGA | Volatile | 0°C~95°C TC | Tray | 2015 | Obsolete | 3 (168 Hours) | 170 | EAR99 | 1.31V~1.65V | BOTTOM | 1 | 1.35V | 0.8mm | R-PBGA-B170 | 1.3905V | 1.3095V | 4Gb 128M x 32 | 1 | 1.75GHz | RAM | Parallel | 32b | 128MX32 | 32 | 14b | 4 Gb | 16 | 多库页面突发 | 1.2mm | 14mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS43TR16128B-15HBL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 96-TFBGA | YES | Volatile | 0°C~95°C TC | Tray | e1 | 活跃 | 3 (168 Hours) | 96 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 1.425V~1.575V | BOTTOM | 260 | 1 | 1.5V | 0.8mm | 10 | R-PBGA-B96 | 不合格 | 1.575V | 1.5V | 1.425V | 2Gb 128M x 16 | 1 | ASYNCHRONOUS | 667MHz | 20ns | DRAM | Parallel | 128MX16 | 3-STATE | 16 | 15ns | 0.014A | 2147483648 bit | COMMON | 8192 | 48 | 48 | 1.2mm | 13mm | 9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
11LC040T-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 11LC040 | 8 | 5V | Serial | 4Kb 512 x 8 | 5mA | 100kHz | EEPROM | 单线 | 8 | 5ms | 4 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
93C56AT-E/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2011 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 93C56A | 8 | 5V | Serial | 2Kb 256 x 8 | 2mA | SYNCHRONOUS | 2MHz | 250 ns | EEPROM | SPI | 8 | 2ms | 2 kb | MICROWIRE | 2ms | 3mm | 2mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C2265KV18-400BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 165-LBGA | YES | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | 3A991 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | 1.8V | 1.9V | 1.7V | 36Mb 1M x 36 | 2 | 400MHz | SRAM | Parallel | 1MX36 | 3-STATE | 36 | 36b | 36 Mb | 0.31A | 0.45 ns | SEPARATE | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C199CNL-15VXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 28-BSOJ (0.300, 7.62mm Width) | 28 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | e4 | yes | Obsolete | 3 (168 Hours) | 28 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 15GHz | 30 | CY7C199 | 5V | 5V | 256Kb 32K x 8 | 1 | 80mA | SRAM | Parallel | 32KX8 | 3-STATE | 8 | 15ns | 15b | 256 kb | COMMON | Asynchronous | 8b | 2V | 3.556mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY14B101K-SP45XC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 48-BSSOP (0.295, 7.50mm Width) | 48 | Non-Volatile | 0°C~70°C TA | Tube | 2007 | e4 | Obsolete | 3 (168 Hours) | 48 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.635mm | unknown | 20 | CY14B101 | 48 | 不合格 | 3.3V | 3.6V | 2.7V | 1Mb 128K x 8 | 50mA | ASYNCHRONOUS | NVSRAM | Parallel | 8b | 128KX8 | 8 | 45ns | 1 Mb | 0.003A | 45 ns | 8b | 2.794mm | 15.875mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S25FL132K0XMFV013 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | 2013 | FL1-K | e3 | Obsolete | 3 (168 Hours) | 8 | ALSO CONFIGURABLE AS 32M X 1 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | 不合格 | 3V | 3.6V | 2.7V | SPI, Serial | 32Mb 4M x 8 | 25mA | 108MHz | 7 ns | FLASH | SPI - Quad I/O | 4 | 3ms | 24b | 32 Mb | 0.000005A | Synchronous | 8b | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2 | 256B | 2.159mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CAT24C32WI-GT3HP | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 1 (Unlimited) | 1.7V~5.5V | 32Kb 4K x 8 | 1MHz | 400ns | EEPROM | I2C | 5ms | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1361C-100BGC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 119-BGA | 119 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | no | Obsolete | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | FLOW-THROUGH ARCHITECTURE | 3.135V~3.6V | BOTTOM | 220 | 1 | 3.3V | 1.27mm | CY7C1361 | 119 | 3.3V | 3.6V | 3.135V | 9Mb 256K x 36 | 4 | 180mA | 100MHz | 8.5ns | SRAM | Parallel | 256KX36 | 3-STATE | 36 | 18b | 9 Mb | COMMON | Synchronous | 36b | 22mm | 无 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY62148DV30LL-55SXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 32-SOIC (0.445, 11.30mm Width) | 32 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | MoBL® | e4 | yes | Obsolete | 3 (168 Hours) | 32 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.2V~3.6V | DUAL | 260 | 1 | 3V | 30 | CY62148 | 3V | 3.6V | 2.2V | 4Mb 512K x 8 | 1 | 10mA | SRAM | Parallel | 3-STATE | 8 | 55ns | 19b | 4 Mb | 0.000006A | 55 ns | COMMON | Asynchronous | 8b | 2.997mm | 20.4465mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BQ4015YMA-70 | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Tin | 通孔 | 通孔 | 32-DIP Module (0.61, 15.49mm) | 32 | Non-Volatile | 0°C~70°C TA | Tube | no | Obsolete | 1 (Unlimited) | 32 | 3A991.B.2.A | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 70GHz | BQ4015 | 5V | 5V | 4Mb 512K x 8 | 50mA | 50mA | NVSRAM | Parallel | 8b | 512KX8 | 70ns | 4 Mb | 0.001A | 70 ns | 8b | 9.4mm | 42.8mm | 18.42mm | 无 | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AT24CS64-XHM-B | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | Non-Volatile | -40°C~85°C TA | Tube | 2005 | yes | 活跃 | 3 (168 Hours) | 1.7V~5.5V | AT24CS64 | 2-Wire, I2C, Serial | 64Kb 8K x 8 | 1MHz | 550ns | EEPROM | I2C | 5ms | ROHS3 Compliant |