
STP9N65M2
TO-220-3
STMICROELECTRONICS STP9N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
规格参数
- 类型参数全选
生命周期状态
ACTIVE (Last Updated: 7 months ago)
工厂交货时间
16 Weeks
底架
Through Hole
安装类型
Through Hole
包装/外壳
TO-220-3
引脚数
3
质量
329.988449mg
5A Tc
10V
60W Tc
22.5 ns
操作温度
150°C TJ
包装
Tube
系列
MDmesh™
零件状态
Active
湿度敏感性等级(MSL)
1 (Unlimited)
ECCN 代码
EAR99
峰值回流焊温度(摄氏度)
NOT SPECIFIED
时间@峰值回流温度-最大值(s)
NOT SPECIFIED
基本部件号
STP9N
通道数量
1
接通延迟时间
7.5 ns
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
900m Ω @ 2.5A, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 250μA
输入电容(Ciss)(Max)@Vds
315pF @ 100V
门极电荷(Qg)(最大)@Vgs
10nC @ 10V
上升时间
6.6ns
Vgs(最大值)
±25V
下降时间(典型值)
18 ns
连续放电电流(ID)
5A
阈值电压
3V
栅极至源极电压(Vgs)
25V
漏源击穿电压
650V
达到SVHC
No SVHC
RoHS状态
ROHS3 Compliant
相关型号
- 图片产品型号品牌MountPackage / CaseContinuous Drain Current (ID)Current - Continuous Drain (Id) @ 25°CThreshold VoltageGate to Source Voltage (Vgs)Power Dissipation-MaxDrive Voltage (Max Rds On,Min Rds On)
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STP9N65M2
Through Hole
TO-220-3
5 A
5A (Tc)
3 V
25 V
60W (Tc)
10V
-
Through Hole
TO-220-3 Full Pack
5 A
5A (Tc)
3 V
25 V
20W (Tc)
10V
-
Through Hole
TO-220-3 Full Pack
6.5 A
6.5A (Tc)
3 V
25 V
25W (Tc)
10V
-
Through Hole
TO-220-3 Full Pack
5.3 A
5.3A (Tc)
3 V
30 V
30W (Tc)
10V
-
Through Hole
TO-220-3 Full Pack
5 A
5A (Tc)
3 V
-
20W (Tc)
10V
STP9N65M2 PDF数据手册
- 数据表 :
- 仿真模型 :