
GD75FSY120L3S
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Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 75A; L3.2
规格参数
- 类型参数全选
Type of module
IGBT
Semiconductor structure
transistor/transistor
Max. off-state voltage
1.2kV
75A
Case
L3.2
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Pulsed collector current
150A
Mechanical mounting
screw
Certificates
RoHS compliant
拓扑
IGBT three-phase bridge OE output