![BSM150GAL120DN2E3166](https://res.utmel.com/Images/category/Discrete Semiconductor Products.png)
BSM150GAL120DN2E3166
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Description: Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel
规格参数
- 类型参数全选
表面安装
NO
终端数量
7
晶体管元件材料
SILICON
Transferred
SIEMENS A G
FLANGE MOUNT, R-XUFM-X7
1
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
670 ns
300 ns
ECCN 代码
EAR99
附加功能
FAST
端子位置
UPPER
终端形式
UNSPECIFIED
Reach合规守则
unknown
JESD-30代码
R-XUFM-X7
资历状况
Not Qualified
配置
SINGLE WITH BUILT-IN DIODE
箱体转运
ISOLATED
晶体管应用
GENERAL PURPOSE SWITCHING
极性/通道类型
N-CHANNEL
集电极电流-最大值(IC)
210 A
集电极-发射器电压-最大值
1200 V
BSM150GAL120DN2E3166 PDF数据手册
- 数据表 :