制造商是'Siemens'
Siemens 晶体管 - 特殊用途
(23)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 表面安装 | 材料 | 质量 | 终端数量 | 晶体管元件材料 | 外壳材料 | Case | Electrical mounting | Features of semiconductor devices | Kind of package | Leads | Max. forward impulse current | Max. forward voltage | Max. off-state voltage | Mechanical mounting | Type of bridge rectifier | JESD-609代码 | ECCN 代码 | 类型 | 端子表面处理 | 最高工作温度 | 附加功能 | HTS代码 | 最大功率耗散 | 端子位置 | 终端形式 | 深度 | Reach合规守则 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 配置 | 操作模式 | 功率耗散 | 箱体转运 | 晶体管应用 | 极性/通道类型 | 集电极发射器电压(VCEO) | 最大集电极电流 | JEDEC-95代码 | 增益 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 转换频率 | 脉冲漏极电流-最大值(IDM) | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大耗散功率(Abs) | 数量 | 集电极电流-最大值(IC) | 反馈上限-最大值 (Crss) | 环境耗散-最大值 | ||||||||||||||||
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![]() | SPB30N03L | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 西门子 A G | SMALL OUTLINE, R-PSSO-G2 | 30 A | 1 | PLASTIC/EPOXY | RECTANGULAR | 小概要 | 2 | SILICON | Transferred | EAR99 | 逻辑电平兼容 | SINGLE | 鸥翼 | unknown | R-PSSO-G2 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | N-CHANNEL | 0.028 Ω | 120 A | 30 V | 145 mJ | METAL-OXIDE SEMICONDUCTOR | ||||||||||||||||||||||||||||||||||||||||||||
![]() | BF979S | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Transferred | 西门子 A G | , | 1 | 150 °C | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | unknown | SINGLE | PNP | 0.16 W | 0.05 A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SPU09N05 | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | 西门子 A G | TO-251 | IN-LINE, R-PSIP-T3 | 9 A | 1 | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | 3 | SILICON | Transferred | EAR99 | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSIP-T3 | 不合格 | SINGLE | 增强型MOSFET | N-CHANNEL | TO-251 | 0.15 Ω | METAL-OXIDE SEMICONDUCTOR | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSS82C | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BF964 | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | 西门子 A G | 0.03 A | 1 | 150 °C | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | unknown | SINGLE | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.225 W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SPD30N03 | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 西门子 A G | SMALL OUTLINE, R-PSSO-G2 | 30 A | 1 | PLASTIC/EPOXY | RECTANGULAR | 小概要 | 2 | SILICON | Transferred | EAR99 | SINGLE | 鸥翼 | unknown | R-PSSO-G2 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | N-CHANNEL | 0.015 Ω | 120 A | 30 V | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | SPB46N03 | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 西门子 A G | TO-263 | SMALL OUTLINE, R-PSSO-G2 | 46 A | 1 | PLASTIC/EPOXY | RECTANGULAR | 小概要 | 2 | SILICON | Transferred | EAR99 | SINGLE | 鸥翼 | unknown | 3 | R-PSSO-G2 | 不合格 | SINGLE | 增强型MOSFET | N-CHANNEL | 0.015 Ω | 30 V | METAL-OXIDE SEMICONDUCTOR | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | BFP183 | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1 | Non-Compliant | 4 | 50 | 150 °C | 450 mW | 12 V | 65 mA | 20 dB | 8 GHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSS131 | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | 西门子 A G | SOT-23 | SOT-23, 3 PIN | 0.1 A | 150 °C | PLASTIC/EPOXY | RECTANGULAR | 小概要 | module - slim | steel | 50 g | 3 | SILICON | 1 | PWS-E flat | screw | glass passivated | bulk | M6 screws | 2.5kA | 1.43V | 1.2kV | screw | three-phase | 无 | e0 | EAR99 | metal fan grille 170 x 170 | Tin/Lead (Sn/Pb) | DUAL | 鸥翼 | 6 mm | unknown | 3 | CECC | R-PDSO-G3 | 不合格 | SINGLE | 增强型MOSFET | N-CHANNEL | 16 Ω | 240 V | METAL-OXIDE SEMICONDUCTOR | 0.36 W | grille rings - 8 | 5 pF | |||||||||||||||||||||||
![]() | SPP30N03 | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | 西门子 A G | SFM | FLANGE MOUNT, R-PSFM-T3 | 30 A | 1 | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 3 | SILICON | Transferred | EAR99 | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | 不合格 | SINGLE | 增强型MOSFET | N-CHANNEL | TO-220AB | 0.023 Ω | 30 V | METAL-OXIDE SEMICONDUCTOR | |||||||||||||||||||||||||||||||||||||||||||||
![]() | BUZ54A | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | 西门子 A G | FLANGE MOUNT, O-MBFM-P2 | 4.5 A | 1 | 150 °C | METAL | ROUND | FLANGE MOUNT | 690 ns | 205 ns | 2 | SILICON | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8541.29.00.95 | BOTTOM | PIN/PEG | unknown | O-MBFM-P2 | 不合格 | SINGLE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | TO-204AA | 2.6 Ω | 18 A | 1000 V | 850 mJ | METAL-OXIDE SEMICONDUCTOR | 125 W | 40 pF | 125 W | |||||||||||||||||||||||||||||||||
![]() | SPU28N05L | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | 西门子 A G | IN-LINE, R-PSIP-T3 | 28 A | 1 | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | 3 | SILICON | Transferred | EAR99 | 逻辑电平兼容 | SINGLE | THROUGH-HOLE | unknown | R-PSIP-T3 | 不合格 | SINGLE | 增强型MOSFET | SWITCHING | N-CHANNEL | 0.05 Ω | 55 V | METAL-OXIDE SEMICONDUCTOR | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | PTFA241301F | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | 西门子 A G | , | 1 | 200 °C | 有 | EAR99 | unknown | SINGLE | 增强型MOSFET | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 438 W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSM151R | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | 西门子 A G | FLANGE MOUNT, R-PUFM-X4 | 48 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 4 | SILICON | Transferred | EAR99 | 8541.29.00.95 | UPPER | UNSPECIFIED | unknown | R-PUFM-X4 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | ISOLATED | SWITCHING | N-CHANNEL | 0.12 Ω | 192 A | 500 V | METAL-OXIDE SEMICONDUCTOR | 625 W | 700 pF | 625 W | ||||||||||||||||||||||||||||||||||||||||
![]() | BSM151 | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | 西门子 A G | FLANGE MOUNT, R-PUFM-X4 | 48 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 4 | SILICON | Obsolete | EAR99 | 8541.29.00.95 | UPPER | UNSPECIFIED | unknown | R-PUFM-X4 | 不合格 | SINGLE | 增强型MOSFET | ISOLATED | SWITCHING | N-CHANNEL | 0.12 Ω | 192 A | 500 V | METAL-OXIDE SEMICONDUCTOR | 625 W | 700 pF | 625 W | ||||||||||||||||||||||||||||||||||||||||
![]() | SPU02N60 | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | 西门子 A G | IN-LINE, R-PSIP-T3 | 2 A | 1 | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | 3 | SILICON | Transferred | EAR99 | SINGLE | THROUGH-HOLE | unknown | R-PSIP-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | N-CHANNEL | 5.5 Ω | 8 A | 600 V | 135 mJ | METAL-OXIDE SEMICONDUCTOR | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | SPU31N05 | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | 西门子 A G | IN-LINE, R-PSIP-T3 | 31 A | 1 | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | 3 | SILICON | Transferred | EAR99 | SINGLE | THROUGH-HOLE | unknown | R-PSIP-T3 | 不合格 | SINGLE | 增强型MOSFET | N-CHANNEL | 0.04 Ω | 55 V | METAL-OXIDE SEMICONDUCTOR | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SPU28N03 | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | 西门子 A G | IN-LINE, R-PSIP-T3 | 28 A | 1 | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | 3 | SILICON | Transferred | EAR99 | SINGLE | THROUGH-HOLE | unknown | R-PSIP-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | N-CHANNEL | 0.023 Ω | 112 A | 30 V | 145 mJ | METAL-OXIDE SEMICONDUCTOR | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | SPU14N05 | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | 西门子 A G | IN-LINE, R-PSIP-T3 | 14 A | 1 | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | 3 | SILICON | Transferred | EAR99 | SINGLE | THROUGH-HOLE | unknown | R-PSIP-T3 | 不合格 | SINGLE | 增强型MOSFET | N-CHANNEL | 0.1 Ω | 55 V | METAL-OXIDE SEMICONDUCTOR | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSM191F | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | 西门子 A G | FLANGE MOUNT, R-PUFM-X4 | 28 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 4 | SILICON | Obsolete | UPPER | UNSPECIFIED | unknown | R-PUFM-X4 | 不合格 | SINGLE | 增强型MOSFET | ISOLATED | SWITCHING | N-CHANNEL | 28 A | 0.42 Ω | 110 A | 1000 V | METAL-OXIDE SEMICONDUCTOR | 700 W | 500 pF | 700 W | |||||||||||||||||||||||||||||||||||||||||
![]() | BSM181F | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | 西门子 A G | FLANGE MOUNT, R-PUFM-X4 | 34 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 4 | SILICON | Obsolete | EAR99 | 8541.29.00.95 | UPPER | UNSPECIFIED | unknown | R-PUFM-X4 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | ISOLATED | SWITCHING | N-CHANNEL | 0.32 Ω | 136 A | 800 V | METAL-OXIDE SEMICONDUCTOR | 700 W | 800 pF | 700 W | ||||||||||||||||||||||||||||||||||||||||
![]() | BUZ71AL | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | 西门子 A G | FLANGE MOUNT, R-PSFM-T3 | 13 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | 160 ns | 125 ns | 3 | SILICON | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | 逻辑电平兼容 | 8541.29.00.95 | SINGLE | THROUGH-HOLE | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | N-CHANNEL | TO-220AB | 0.12 Ω | 52 A | 50 V | 6 mJ | METAL-OXIDE SEMICONDUCTOR | 40 W | 150 pF | 40 W | |||||||||||||||||||||||||||||||||
![]() | BCR141E6327 | Siemens | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1 | Non-Compliant | 3 | 50 | 150 °C | 200 mW | 50 V | 100 mA | 130 MHz |