制造商是'ROHM Semiconductor'
ROHM Semiconductor 晶体管 - FET,MOSFET - 阵列
(286)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 引脚数 | 供应商器件包装 | 晶体管元件材料 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 类型 | 电阻 | 端子表面处理 | 最高工作温度 | HTS代码 | 子类别 | 电压 - 额定直流 | 最大功率耗散 | 技术 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 极性 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 产品类别 | 晶体管类型 | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大结点温度(Tj) | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 产品类别 | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||||||||||||||||||||
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![]() | EM6K7T2R | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 15 ns | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | SILICON | 2 | 150°C TJ | Digi-Reel® | 2009 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 150mW | FLAT | 260 | 10 | *K7 | 6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 5 ns | 2 N-Channel (Dual) | SWITCHING | 1.2 Ω @ 200mA, 2.5V | 1V @ 1mA | 25pF @ 10V | 10ns | 20V | 10 ns | 200mA | 8V | 0.2A | 1.4Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | UM6K31NTN | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 18 ns | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | 2007 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 150mW | 鸥翼 | 260 | 10 | 6 | 2 | 增强型MOSFET | 3.5 ns | 2 N-Channel (Dual) | SWITCHING | 2.4 Ω @ 250mA, 10V | 2.3V @ 1mA | 15pF @ 25V | 5ns | 60V | 28 ns | 250mA | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 2.5V Drive | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | EM6M2T2R | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | 2009 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 150mW | DUAL | FLAT | 260 | 10 | *M2 | 6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 150mW | N and P-Channel | SWITCHING | 1 Ω @ 200mA, 4V | 1V @ 1mA | 25pF @ 10V | 20V | N-CHANNEL AND P-CHANNEL | 200mA | 0.2A | 1.4Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | EM6K6T2R | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 15 ns | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | 2007 | e2 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 锡铜 | 150mW | FLAT | 260 | 10 | *K6 | 6 | Dual | 增强型MOSFET | 150mW | 5 ns | 2 N-Channel (Dual) | SWITCHING | 1 Ω @ 300mA, 4V | 1V @ 1mA | 25pF @ 10V | 10ns | 20V | 10 ns | 300mA | 8V | 0.3A | 1.4Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | US6M11TR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 2 | 30 ns | 表面贴装 | 表面贴装 | 6-SMD, Flat Leads | 6 | SILICON | 1.5A 1.3A | 150°C TJ | Tape & Reel (TR) | 2016 | e2 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 600MOhm | 锡铜 | 1W | DUAL | 260 | 10 | *M11 | 6 | 2 | 增强型MOSFET | 8 ns | N and P-Channel | SWITCHING | 180m Ω @ 1.5A, 4.5V | 1V @ 1mA | 110pF @ 10V | 1.8nC @ 4.5V | 10ns | 20V 12V | N-CHANNEL AND P-CHANNEL | 9 ns | 1.3A | 10V | 1.5A | -12V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | QS6J1TR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 45 ns | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 5 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | 2003 | e1 | yes | 不用于新设计 | 1 (Unlimited) | 6 | EAR99 | 340MOhm | -20V | 1.25W | 鸥翼 | 260 | -1.5A | 10 | *J1 | 6 | R-PDSO-G6 | Dual | 增强型MOSFET | 1.25W | 10 ns | 2 P-Channel (Dual) | SWITCHING | 215m Ω @ 1.5A, 4.5V | 2V @ 1mA | 270pF @ 10V | 3nC @ 4.5V | 12ns | 20V | 12 ns | 1.5A | -2V | 12V | -20V | 6A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | EM6K1T2R | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 80 ns | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | 2006 | e2 | yes | 不用于新设计 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 13Ohm | 锡铜 | 30V | 150mW | FLAT | 260 | 100mA | 10 | *K1 | 6 | Dual | 增强型MOSFET | 150mW | 15 ns | 2 N-Channel (Dual) | SWITCHING | 8 Ω @ 10mA, 4V | 1.5V @ 100μA | 13pF @ 5V | 35ns | 35 ns | 100mA | 20V | 0.1A | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5 V | 500μm | 1.6mm | 1.2mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 2SK3018FPDT106 | ROHM Semicon | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | VT6K1T2CR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 20 ns | 表面贴装 | 表面贴装 | 6-SMD, Flat Leads | 6 | SILICON | 2 | 150°C TJ | Cut Tape (CT) | 2011 | e1 | 活跃 | 1 (Unlimited) | 6 | EAR99 | 锡银铜 | 120mW | 260 | 10 | 6 | 2 | 增强型MOSFET | 5 ns | 2 N-Channel (Dual) | SWITCHING | 3.5 Ω @ 100mA, 4.5V | 1V @ 100μA | 7.1pF @ 10V | 4ns | 20V | 38 ns | 100mA | 8V | 0.1A | 20V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 1.2V Drive | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | QS8M51TR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 2 | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | 8 | SILICON | 2A 1.5A | 150°C TJ | Tape & Reel (TR) | 2015 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.5W | DUAL | *M51 | 8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 10 ns | N and P-Channel | SWITCHING | 325m Ω @ 2A, 10V | 2.5V @ 1mA | 290pF @ 25V | 4.7nC @ 5V | 100V | N-CHANNEL AND P-CHANNEL | 1.5A | 20V | 2A | 0.355Ohm | 6A | 100V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | QS5K2TR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 21 ns | 表面贴装 | 表面贴装 | SOT-23-5 Thin, TSOT-23-5 | 5 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | 2006 | e1 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | 100MOhm | 锡银铜 | 30V | 1.25W | 鸥翼 | 260 | 2A | 10 | *K2 | 5 | Dual | 增强型MOSFET | 1.25W | 8 ns | 2 N-Channel (Dual) Common Source | SWITCHING | 100m Ω @ 2A, 4.5V | 1.5V @ 1mA | 175pF @ 10V | 3.9nC @ 4.5V | 10ns | 10 ns | 2A | 1.5V | 12V | 2A | 30V | 8A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5 V | 850μm | 2.9mm | 1.6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | QS6M3TR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 25 Weeks | 45 ns | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | 2006 | e1 | yes | 不用于新设计 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 360MOhm | 900mW | 鸥翼 | 260 | 1.5A | 10 | *M3 | 6 | Dual | 增强型MOSFET | 1.25W | N and P-Channel | SWITCHING | 230m Ω @ 1.5A, 4.5V | 1.5V @ 1mA | 80pF @ 10V | 1.6nC @ 4.5V | 12ns | 30V 20V | N-CHANNEL AND P-CHANNEL | 12 ns | 1.5A | 1.5V | 12V | -20V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5 V | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | QS6K1TR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 15 ns | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | 2006 | e1 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 364MOhm | 30V | 900mW | 鸥翼 | 260 | 1A | 10 | *K1 | 6 | Dual | 增强型MOSFET | 1.25W | 7 ns | 2 N-Channel (Dual) | SWITCHING | 238m Ω @ 1A, 4.5V | 1.5V @ 1mA | 77pF @ 10V | 2.4nC @ 4.5V | 7ns | 7 ns | 1A | 1.5V | 12V | 1A | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5 V | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | QS6M4TR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 45 ns | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | 2006 | e1 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 8541.29.00.95 | 1.25W | 鸥翼 | 260 | 1.5A | 10 | *M4 | 6 | Dual | 增强型MOSFET | 1.25W | N and P-Channel | SWITCHING | 230m Ω @ 1.5A, 4.5V | 1.5V @ 1mA | 80pF @ 10V | 1.6nC @ 4.5V | 12ns | 30V 20V | N-CHANNEL AND P-CHANNEL | 12 ns | 1.5A | 1.5V | 12V | 0.245Ohm | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | QH8MA4TCR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 2 | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | 2 | SILICON | 9A 8A | 150°C TJ | Cut Tape (CT) | 2015 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.5W | DUAL | 未说明 | 未说明 | R-PDSO-F8 | 增强型MOSFET | N and P-Channel | SWITCHING | 16m Ω @ 9A, 10V | 2.5V @ 1mA | 640pF @ 15V | 15.5nC @ 10V | 30V | N-CHANNEL AND P-CHANNEL | 8A | 0.016Ohm | 30V | 3.5 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | EM6K34T2CR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 150°C TJ | Cut Tape (CT) | yes | 活跃 | 1 (Unlimited) | 120mW | 未说明 | 未说明 | 120mW | 2 N-Channel (Dual) | 2.2 Ω @ 200mA, 4.5V | 800mV @ 1mA | 26pF @ 10V | 50V | 200mA | Logic Level Gate, 0.9V Drive | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | UM6J1NTN | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 30 ns | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | 2011 | e2 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 锡铜 | 150mW | 鸥翼 | 260 | 10 | *J1 | 6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 8 ns | 2 P-Channel (Dual) | SWITCHING | 1.4 Ω @ 200mA, 10V | 2.5V @ 1mA | 30pF @ 10V | 5ns | 30V | 40 ns | 200mA | 20V | 0.2A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | UM6K1NTN | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 80 ns | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | 2006 | yes | 不用于新设计 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 13Ohm | 30V | 150mW | 鸥翼 | 260 | 100mA | 10 | *K1 | 6 | 1 | Dual | 增强型MOSFET | 150mW | 15 ns | 2 N-Channel (Dual) | SWITCHING | 8 Ω @ 10mA, 4V | 1.5V @ 100μA | 13pF @ 5V | 35ns | 35 ns | 100mA | 1.5V | 20V | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5 V | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | QS8J4TR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 80 ns | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | 8 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | 2012 | e2 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin/Copper (Sn/Cu) | 550mW | 260 | 10 | 8 | 2 | 增强型MOSFET | 8 ns | 2 P-Channel (Dual) | SWITCHING | 56m Ω @ 4A, 10V | 2.5V @ 1mA | 800pF @ 10V | 13nC @ 10V | 20ns | 30V | 50 ns | 4A | 20V | 4A | 0.056Ohm | -30V | 16A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | QS6K21TR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 16 ns | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | e1 | yes | 不用于新设计 | 1 (Unlimited) | 6 | EAR99 | 1.25W | 鸥翼 | *K21 | 6 | Dual | 增强型MOSFET | 1.25W | 6 ns | 2 N-Channel (Dual) | SWITCHING | 1.5V @ 1mA | 8ns | 45V | 8 ns | 1A | 12V | 1A | 45V | METAL-OXIDE SEMICONDUCTOR | Standard | 300mOhm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SP8K2FU6TB | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 150°C TJ | Tape & Reel (TR) | 2004 | Obsolete | 1 (Unlimited) | EAR99 | 2W | *K2 | 增强型MOSFET | 2W | 2 N-Channel (Dual) | 30m Ω @ 6A, 10V | 2.5V @ 1mA | 520pF @ 10V | 10.1nC @ 5V | 30V | 6A | 2.5V | 6A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | US6J11TR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 30 ns | 表面贴装 | 表面贴装 | 6-SMD, Flat Leads | 6 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | 2012 | e2 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin/Copper (Sn/Cu) | 1W | 260 | 10 | *J11 | 6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 8 ns | 320mW | 2 P-Channel (Dual) | SWITCHING | 260m Ω @ 1.3A, 4.5V | 1V @ 1mA | 290pF @ 6V | 2.4nC @ 4.5V | 10ns | 12V | 9 ns | 1.3A | 10V | 0.0013A | 12V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | QS6J11TR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 65 ns | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 1 | 150°C TJ | Tape & Reel (TR) | 2009 | e1 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 600mW | 鸥翼 | 260 | 10 | *J11 | 6 | R-PDSO-G8 | 2 | Dual | 增强型MOSFET | 10 ns | 2 P-Channel (Dual) | SWITCHING | 105m Ω @ 2A, 4.5V | 1V @ 1mA | 770pF @ 6V | 6.5nC @ 4.5V | 17ns | 12V | 35 ns | 2A | 10V | 2A | 0.105Ohm | 8A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | QS6K1FRATR | Rohm Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1A (Ta) | QS6K1 | 1(A) | 30(V) | Military | TSMT | -55C to 150C | 12(V) | Enhancement | 2 | 无 | 表面贴装 | 30 V | 7 ns | 500 mV | AEC-Q101 | 1.25 W | N-Channel, NPN | + 150 C | - 12 V, + 12 V | 0.000353 oz | - 55 C | 3000 | SMD/SMT | QS6K1FRA | ROHM 半导体 | ROHM 半导体 | 1.7 nC | 170 mOhms | Details | 15 ns | 1 A | MOSFET | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | TSMT6 (SC-95) | Rohm Semiconductor | 活跃 | 150°C | 卷带 | Automotive, AEC-Q101 | 功率MOSFET | MOSFETs | Si | 6 | N | Dual | 2 Channel | 1.25(W) | 900mW (Tc) | 2 N-Channel (Dual) | 238mOhm @ 1A, 4.5V | 1.5V @ 1mA | 10V | 2.4nC @ 4.5V | 7 ns | 30V | 2 N-Channel | Logic Level Gate, 2.5V Drive | MOSFET | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SH8J62TB1 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 70 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOP | 4.5A | 150°C TJ | Tape & Reel (TR) | 2010 | 活跃 | 1 (Unlimited) | 150°C | 2W | *J62 | 2 | 2W | 7 ns | 2W | 2 P-Channel (Dual) | 56mOhm @ 4.5A, 10V | 2.5V @ 1mA | 800pF @ 10V | 8nC @ 5V | 30V | 4.5A | 20V | -30V | 800pF | 150°C | 逻辑电平门 | 40mOhm | 56 mΩ | 1.75mm | ROHS3 Compliant |