制造商是'Renesas'
Renesas PMIC - 栅极驱动器
(896)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 安装类型 | 包装/外壳 | 表面安装 | 操作温度 | 包装 | 已出版 | JESD-609代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 输入类型 | 上升/下降时间(Typ) | 接口IC类型 | 信道型 | 驱动器数量 | 接通时间 | 输出峰值电流限制-名 | 闸门类型 | 峰值输出电流（源极，漏极） | 高边驱动器 | 关断时间 | 高压侧电压-最大值(自举) | 座位高度(最大) | 长度 | 宽度 | RoHS状态 | |||
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 | ISL6620ACRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | EAR99 | Matte Tin (Sn) - annealed | 4.5V~5.5V | 未说明 | 未说明 | ISL6620 | 10 | Non-Inverting | 8ns 8ns | 和基于栅极的mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||
 | EL7212CSZ-T13 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 0.8V 2.4V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Low-Side | -40°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~15V | DUAL | 鸥翼 | 未说明 | 1 | 未说明 | EL7212 | 8 | R-PDSO-G8 | Inverting | 7.5ns 10ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 2A | N-Channel, P-Channel MOSFET | 2A 2A | NO | 4.9mm | 3.911mm | ROHS3 Compliant | |||||||||
 | ISL6609ACRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 1V 2V | 表面贴装 | 8-VQFN Exposed Pad | YES | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | 4.5V~5.5V | QUAD | 无铅 | 1 | 5V | 0.65mm | ISL6609 | 8 | S-PQCC-N8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | - 4A | YES | 36V | 1mm | 3mm | 3mm | ROHS3 Compliant | |||||||||||
 | HIP4082IP | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1V 2.5V | Industrial grade | 通孔 | 16-DIP (0.300, 7.62mm) | NO | Half-Bridge | -55°C~150°C TJ | Tube | 1994 | Obsolete | 1 (Unlimited) | 16 | EAR99 | 8.5V~15V | DUAL | 1 | 12V | HIP4082 | R-PDIP-T16 | Non-Inverting | 9ns 9ns | 全桥mosfet驱动器 | Independent | 4 | 0.15 µs | N-Channel MOSFET | 1.4A 1.3A | YES | 0.1 µs | 95V | 5.33mm | 19.17mm | 7.62mm | Non-RoHS Compliant | |||||||||||
 | HIP2100IBT | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4V 7V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -55°C~150°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 8 | EAR99 | 9V~14V | DUAL | 鸥翼 | 1 | 12V | HIP2100 | R-PDSO-G8 | Non-Inverting | 10ns 10ns | Independent | 2 | 0.045 µs | N-Channel MOSFET | 2A 2A | YES | 0.045 µs | 114V | 1.75mm | 4.9mm | 3.9mm | Non-RoHS Compliant | |||||||||||||
| HIP2101IB | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.2V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -55°C~150°C TJ | Tube | Obsolete | 1 (Unlimited) | 8 | EAR99 | 9V~14V | DUAL | 鸥翼 | 1 | 12V | HIP2101 | R-PDSO-G8 | Non-Inverting | 10ns 10ns | Independent | 2 | 0.056 µs | N-Channel MOSFET | 2A 2A | YES | 0.056 µs | 114V | 1.75mm | 4.9mm | 3.9mm | Non-RoHS Compliant | |||||||||||||
 | HIP4082IBT | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1V 2.5V | 表面贴装 | 16-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -55°C~150°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 16 | EAR99 | 8.5V~15V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 1.27mm | 未说明 | HIP4082 | 16 | R-PDSO-G16 | Non-Inverting | 9ns 9ns | 全桥mosfet驱动器 | Independent | 4 | 0.15 µs | N-Channel MOSFET | 1.4A 1.3A | YES | 0.1 µs | 95V | 1.75mm | 9.9mm | 3.9mm | Non-RoHS Compliant | ||||||||
| EL7202CS | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.4V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Low-Side | -40°C~125°C TJ | Tube | Obsolete | 1 (Unlimited) | 8 | EAR99 | 4.5V~15V | DUAL | 鸥翼 | 未说明 | 1 | 未说明 | EL7202 | R-PDSO-G8 | Non-Inverting | 7.5ns 10ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 2A | N-Channel, P-Channel MOSFET | 2A 2A | NO | 4.9mm | 3.911mm | Non-RoHS Compliant | |||||||||||||
| EL7212CS | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.4V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Low-Side | -40°C~125°C TJ | Tube | Obsolete | 1 (Unlimited) | 8 | EAR99 | 4.5V~15V | DUAL | 鸥翼 | 未说明 | 1 | 未说明 | EL7212 | R-PDSO-G8 | Inverting | 7.5ns 10ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 2A | N-Channel, P-Channel MOSFET | 2A 2A | NO | 4.9mm | 3.911mm | Non-RoHS Compliant | ||||||||||||||
 | EL7202CN | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.4V | Industrial grade | 通孔 | 8-DIP (0.300, 7.62mm) | NO | Low-Side | -40°C~125°C TJ | Tube | Obsolete | 1 (Unlimited) | 8 | EAR99 | 4.5V~15V | DUAL | 未说明 | 1 | 未说明 | EL7202 | 8 | R-PDIP-T8 | Non-Inverting | 7.5ns 10ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 2A | N-Channel, P-Channel MOSFET | 2A 2A | NO | 5.334mm | Non-RoHS Compliant | ||||||||||||||
 | HIP2100IR4Z | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4V 7V | Industrial grade | 表面贴装 | 12-VFDFN Exposed Pad | YES | Half-Bridge | -55°C~150°C TJ | Tube | Obsolete | 3 (168 Hours) | 12 | EAR99 | 9V~14V | DUAL | 无铅 | 1 | 12V | 0.5mm | HIP2100 | Non-Inverting | 10ns 10ns | Independent | 2 | 0.045 µs | N-Channel MOSFET | 2A 2A | YES | 0.045 µs | 114V | 0.9mm | 4mm | 4mm | ROHS3 Compliant | ||||||||||||
| ISL6596CBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Commercial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | 0°C~125°C TJ | Tube | Obsolete | 3 (168 Hours) | 4.5V~5.5V | unknown | ISL6596 | 8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | - 4A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||
| ISL6605IBZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1V 2V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 1 (Unlimited) | 8 | Matte Tin (Sn) | 4.5V~5.5V | DUAL | 鸥翼 | 未说明 | 1 | 5V | 未说明 | ISL6605 | 8 | R-PDSO-G8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | YES | 33V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||
| ISL6608CRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Commercial grade | 表面贴装 | 8-VQFN Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 2 (1 Year) | Matte Tin (Sn) | 4.5V~5.5V | 未说明 | 未说明 | ISL6608 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 22V | ROHS3 Compliant | |||||||||||||||||||||||
| ISL6207HRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1V 2V | 表面贴装 | 8-VQFN Exposed Pad | Half-Bridge | -10°C~125°C TJ | Tube | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 4.5V~5.5V | 未说明 | 未说明 | ISL6207 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||
| ICL7667CBA | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | High-Side or Low-Side | 0°C~70°C TA | Tube | 1999 | Obsolete | 1 (Unlimited) | 8 | 4.5V~15V | DUAL | 鸥翼 | 2 | ICL7667 | R-PDSO-G8 | Inverting | 20ns 20ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | N-Channel MOSFET | NO | 1.75mm | 4.9mm | 3.9mm | Non-RoHS Compliant | |||||||||||||||||
 | ISL6613AECBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Commercial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 10.8V~13.2V | 未说明 | 未说明 | ISL6613AE | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||
 | ISL6614CRZA | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Commercial grade | 表面贴装 | 16-VQFN Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 10.8V~13.2V | 未说明 | 未说明 | ISL6614 | Non-Inverting | 26ns 18ns | Synchronous | 4 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||
| ISL83202IPZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1V 2.5V | 通孔 | 16-DIP (0.300, 7.62mm) | NO | Half-Bridge | -55°C~150°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | 16 | EAR99 | Matte Tin (Sn) | 8.5V~15V | DUAL | 未说明 | 1 | 12V | 未说明 | ISL83202 | 16 | R-PDIP-T16 | Inverting, Non-Inverting | 9ns 9ns | Independent | 4 | 150 µs | 1A | N-Channel MOSFET | 1A 1A | YES | 100 µs | 70V | 5.33mm | 19.17mm | 7.62mm | ROHS3 Compliant | ||||||||
| ISL6597CRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Commercial grade | 表面贴装 | 16-VQFN Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 4.5V~5.5V | ISL6597 | Non-Inverting | 8ns 8ns | 基于缓冲器或逆变器的MOSFET驱动器 | Synchronous | 4 | N-Channel MOSFET | - 4A | 36V | ROHS3 Compliant | ||||||||||||||||||||||||||
| ISL6210CRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 16-VQFN Exposed Pad | Half-Bridge | -10°C~125°C TJ | Tube | Obsolete | 1 (Unlimited) | 4.5V~5.5V | ISL6210 | Non-Inverting | 8ns 8ns | 基于缓冲器或逆变器的MOSFET驱动器 | Synchronous | 4 | N-Channel MOSFET | 2A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||||
| ISL6594DCRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | 哑光锡 | 6.8V~13.2V | 未说明 | 未说明 | ISL6594 | 10 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||
| ISL6594DCRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tube | e3 | 活跃 | 3 (168 Hours) | 哑光锡 | 6.8V~13.2V | 未说明 | 未说明 | ISL6594 | 10 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||
| ISL83202IBZT | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | 1V 2.5V | 表面贴装 | 16-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -55°C~150°C TJ | Tape & Reel (TR) | 1994 | e3 | 活跃 | 3 (168 Hours) | 16 | EAR99 | 哑光锡 | 8.5V~15V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 1.27mm | 未说明 | ISL83202 | 16 | R-PDSO-G16 | Inverting, Non-Inverting | 9ns 9ns | Independent | 4 | 150 µs | 1A | N-Channel MOSFET | 1A 1A | YES | 100 µs | 70V | 1.75mm | 9.9mm | 3.9mm | ROHS3 Compliant | ||||
| ISL6613BCRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | 哑光锡 | 7V~13.2V | 未说明 | 未说明 | ISL6613B | 10 | Non-Inverting | 26ns 18ns | 全桥mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant |